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1. 发明申请

US20120163403A1 COMPACT AND EFFICIENT VISIBLE LASER SOURCE WITH HIGH SPEED MODULATION 失效
标题翻译：具有高速调制功能的高效可视激光源
公开(公告)号：US20120163403A1
公开(公告)日：2012-06-28
申请号：US13322778
申请日：2009-05-27
申请人： Stepan Essaian , Dzhakhangir Khaydarov , Andrei Shchegrov
发明人： Stepan Essaian , Dzhakhangir Khaydarov , Andrei Shchegrov
IPC分类号： H01S5/06 , H01S3/10 , H01S5/065
CPC分类号： H01S3/109 , G02F1/3775 , H01S3/0617 , H01S3/0621 , H01S3/0623 , H01S3/0627 , H01S3/08045 , H01S3/08054 , H01S3/0815 , H01S3/09415 , H01S3/1115 , H01S3/1611 , H01S3/1618 , H01S3/1673 , H01S3/17
摘要： A compact optically-pumped solid-state laser designed for efficient nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. These crystals contain dopants such as MgO or ZnO and/or have a specified degree of stoichiometry that ensures high reliability. The laser includes a solid-state gain media chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN or PPZnOLT for efficient frequency doubling of the fundamental infrared laser beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources. Also described design of the continuously operated laser with an electro-optic element for modulation of the intensity of the laser output at frequencies up to hundred of megahertz. Such modulation is desired for various applications, including compact projectors with high resolution.
摘要翻译：一种紧凑的光泵浦固态激光器，设计用于使用周期性极化的非线性晶体将有效的非线性腔内频率转换成所需的波长。这些晶体含有诸如MgO或ZnO的掺杂剂和/或具有确定高可靠性的特定化学计量的量。激光器包括固态增益介质芯片，例如Nd：YVO4，其还提供激光器的偏振控制; 以及诸如PPMgOLN或PPZnOLT的周期性极化非线性晶体芯片，用于将基本红外激光束有效倍频到可见波长范围。所描述的设计对于获得低成本的绿色和蓝色激光源是特别有利的。还描述了具有用于调制高达百兆赫兹频率的激光输出强度的电光元件的连续操作的激光器的设计。这种调制对于各种应用是期望的，包括具有高分辨率的紧凑型投影仪。

2. 发明授权

US07742510B2 Compact solid-state laser with nonlinear frequency conversion using periodically poled materials 失效
标题翻译：紧凑型固体激光器，采用周期性极化材料进行非线性频率转换
公开(公告)号：US07742510B2
公开(公告)日：2010-06-22
申请号：US11788916
申请日：2007-04-23
申请人： Stepan Essaian , Andrei Shchegrov
发明人： Stepan Essaian , Andrei Shchegrov
IPC分类号： H01S3/10
CPC分类号： H01S3/109 , G02F1/3558 , G02F1/3775 , G02F2203/11 , H01S3/08036 , H01S3/0805 , H01S3/08054 , H01S3/1115 , H01S3/113 , H01S5/141
摘要： A compact optically-pumped solid-state laser designed for efficient nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. These crystals contain dopants such as MgO or ZnO and/or have a specified degree of stoichiometry that ensures high reliability. The laser includes a solid-state gain media chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN or PPZnOLT for efficient frequency doubling of the fundamental infrared laser beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources.
摘要翻译：一种紧凑的光泵浦固态激光器，设计用于使用周期性极化的非线性晶体将有效的非线性腔内频率转换成所需的波长。这些晶体含有诸如MgO或ZnO的掺杂剂和/或具有确定高可靠性的特定化学计量的量。激光器包括固态增益介质芯片，例如Nd：YVO4，其还提供激光器的偏振控制; 以及诸如PPMgOLN或PPZnOLT的周期性极化非线性晶体芯片，用于将基本红外激光束有效倍频到可见波长范围。所描述的设计对于获得低成本的绿色和蓝色激光源是特别有利的。

3. 发明申请

US20090290605A1 Compact, Efficient and Robust Ultraviolet Solid-State Laser Sources Based on Nonlinear Frequency Conversion in Periodically Poled Materials 有权
标题翻译：基于周期极化材料中非线性频率转换的紧凑，高效和坚固的紫外固态激光源
公开(公告)号：US20090290605A1
公开(公告)日：2009-11-26
申请号：US12534745
申请日：2009-08-03
申请人： Stepan Essaian , Andrei Shchegrov
发明人： Stepan Essaian , Andrei Shchegrov
IPC分类号： H01S3/11 , H01S3/10 , H01S5/187
CPC分类号： H01S3/113 , G02F1/3534 , G02F2001/354 , H01S3/005 , H01S3/0627 , H01S3/0809 , H01S3/09415 , H01S3/109 , H01S3/1118 , H01S3/1611
摘要： A compact and efficient ultraviolet laser source based on a optically-pumped solid-state or fiber laser that produces near-infrared output light suitable for nonlinear frequency conversion. The infrared laser output is frequency tripled or quadrupled to produce light in the ultraviolet wavelength range (200 nm to 400 nm). The novel technology is the use of highly efficient periodically poled nonlinear crystals, such as stoichiometric and MgO-doped lithium tantalate and lithium niobate. As opposed to conventional frequency-converted UV laser sources, which have high power consumption, high cost, and low efficiency, the laser sources of this invention utilize high efficiency nonlinear conversion provided by periodically poled materials and allow lower-cost architectures without additional focusing lenses, high power pump diodes, etc.
摘要翻译：基于光泵浦固态或光纤激光器的紧凑而有效的紫外激光源，产生适用于非线性频率转换的近红外输出光。红外激光输出频率为三倍或四倍，以产生紫外线波长范围（200nm至400nm）的光。新技术是使用高效周期性极化非线性晶体，例如化学计量和MgO掺杂的钽酸锂和铌酸锂。与传统的频率转换的UV激光源相比，本发明的激光源具有高功率消耗，高成本和低效率，它们利用周期性极化材料提供的高效率非线性转换，并且允许低成本架构，而无需附加的聚焦透镜，大功率泵二极管等

4. 发明授权

US06355544B1 Selective high concentration doping of semiconductor material utilizing laser annealing 有权
标题翻译：使用激光退火的半导体材料的选择性高浓度掺杂
公开(公告)号：US06355544B1
公开(公告)日：2002-03-12
申请号：US09620481
申请日：2000-07-20
申请人： Stepan Essaian , Abdalla A. Naem
发明人： Stepan Essaian , Abdalla A. Naem
IPC分类号： H01L2126
CPC分类号： H01L21/2251 , H01L21/268 , H01L21/428
摘要： Extremely high dopant concentrations are uniformly introduced into a semiconductor material by laser annealing aided by an anti-reflective coating (ARC). A spin-on-glass (SOG) film containing dopant is formed on top of the semiconductor material. An ARC is then formed over the doped SOG layer. Application of radiation from an excimer laser to the ARC heats and melts the doped SOG film and the underlying semiconductor material. During this melting process, dopant from the SOG film diffuses uniformly within the semiconductor material. Upon removal of the laser radiation, the semiconductor material cools and crystallizes, evenly incorporating the diffused dopant within its lattice structure. The ARC suppresses reflection of the laser by the doped material, promoting efficient transfer of energy from the laser to heat and melt the underlying doped layer and semiconductor material. The present process is especially suited for introducing extremely high levels of conductivity-altering dopant (1020-1021 atoms/cm3) into the polysilicon emitter of a heterojunction bipolar transistor device.
摘要翻译：通过由抗反射涂层（ARC）辅助的激光退火将非常高的掺杂剂浓度均匀地引入到半导体材料中。在半导体材料的顶部形成含有掺杂剂的旋涂玻璃（SOG）膜。然后在掺杂的SOG层上形成ARC。将来自准分子激光器的辐射施加到ARC加热并熔化掺杂的SOG膜和下面的半导体材料。在该熔融过程中，来自SOG膜的掺杂剂在半导体材料内均匀扩散。在去除激光辐射后，半导体材料冷却并结晶，均匀地掺入扩散掺杂剂在其晶格结构内。 ARC通过掺杂材料抑制激光的反射，促进能量从激光器的有效转移到加热并熔化下面的掺杂层和半导体材料。本方法特别适用于将非常高水平的导电性改变掺杂剂（1020-1021原子/ cm3）引入到异质结双极晶体管器件的多晶硅发射极中。

5. 发明授权

US6060392A Fabrication of silicides by excimer laser annealing of amorphous silicon 失效
标题翻译：通过非晶硅的准分子激光退火制备硅化物
公开(公告)号：US6060392A
公开(公告)日：2000-05-09
申请号：US22070
申请日：1998-02-11
申请人： Stepan Essaian , Abdalla Naem
发明人： Stepan Essaian , Abdalla Naem
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L21/44
CPC分类号： H01L29/6659 , H01L21/28052 , H01L21/28518 , H01L29/41783 , H01L29/665
摘要： Stable suicides are formed utilizing excimer laser crystallization in place of a conventional second high temperature rapid thermal processing annealing step. Specifically, thermally unstable silicide having a metal-rich surface layer is conventionally formed utilizing deposition of refractory metal followed by low temperature annealing. After removal of unreacted refractory metal, an amorphous silicon film is deposited on top of the unstable silicide and exposed to radiation from an excimer laser, such that the amorphous silicon melts, reacts with refractory metal from the underlying unstable silicide, and reforms as thermally stable silicide evidencing low electrical resistance.
摘要翻译：使用准分子激光结晶代替常规的第二高温快速热处理退火步骤形成稳定的自杀剂。具体来说，具有富金属的表面层的热不稳定的硅化物通常是利用难熔金属的沉积，然后进行低温退火来形成的。在去除未反应的难熔金属之后，将非晶硅膜沉积在不稳定硅化物的顶部并暴露于来自准分子激光器的辐射，使得非晶硅熔化，与来自不稳定硅化物的难熔金属反应，并且被改变为热稳定硅化物证明低电阻。

6. 发明申请

US20130250983A1 EFFICIENT AND COMPACT VISIBLE MICROCHIP LASER SOURCE WITH PERIODICALLY POLED NONLINEAR MATERIALS 有权
标题翻译：具有周期性非线性材料的有效和紧凑的可见微激光激光源
公开(公告)号：US20130250983A1
公开(公告)日：2013-09-26
申请号：US13394286
申请日：2009-09-04
申请人： Stepan Essaian , Dzhakhangir Khaydarov , Andrei V. Shchegrov
发明人： Stepan Essaian , Dzhakhangir Khaydarov , Andrei V. Shchegrov
IPC分类号： H01S5/06
CPC分类号： H01S5/0605 , G02F1/3558 , G02F1/37 , G02F2001/3503 , G02F2202/20 , H01S3/025 , H01S3/0405 , H01S3/0612 , H01S3/0627 , H01S3/09415 , H01S3/109 , H01S3/1611 , H01S3/1673
摘要： A compact, optically-pumped solid-state microchip laser device uses efficient nonlinear intracavity frequency conversion for obtaining low-cost green and blue laser sources. The laser includes a solid-state gain medium, such as Nd:YVO4, and a nonlinear crystal. The nonlinear crystal is formed of periodically poled lithium niobate or periodically poled lithium tantalate, and the crystal is either MgO-doped, ZnO-doped, or stoichiometric to ensure high reliability. The nonlinear crystal provides efficient frequency doubling to translate energy from an infrared pump laser beam into the visible wavelength range. The laser device is assembled in a package having an output aperture for the output beam and being integrated with an optical bench accommodating a laser assembly. The package encloses and provides heat sinking for the semiconductor diode pump laser, the microchip laser cavity assembly, the optical bench platform, and electrical leads.
摘要翻译：紧凑的，光泵浦的固态微芯片激光装置使用有效的非线性腔内频率转换来获得低成本的绿色和蓝色激光源。激光器包括诸如Nd：YVO4的固态增益介质和非线性晶体。非线性晶体由周期性极化的铌酸锂或周期性极化的钽酸锂形成，并且该晶体是MgO掺杂的，ZnO掺杂的或化学计量的，以确保高可靠性。非线性晶体提供有效的倍频以将来自红外泵浦激光束的能量转换到可见波长范围。激光装置组装在具有用于输出光束的输出孔的封装中，并与容纳激光组件的光学台一体化。封装封装并为半导体二极管泵浦激光器，微芯片激光器腔组件，光学平台和电引线提供散热。

7. 发明授权

US07413635B2 Method for the fabrication of periodically poled Lithium Niobate and Lithium Tantalate nonlinear optical components 失效
标题翻译：制造周期性极化铌酸锂和锂钛酸锂非线性光学元件的方法
公开(公告)号：US07413635B2
公开(公告)日：2008-08-19
申请号：US10741624
申请日：2003-12-19
申请人： Stepan Essaian
发明人： Stepan Essaian
IPC分类号： B01J19/08
CPC分类号： G02F1/3558 , G02F2202/20
摘要： A process for reducing the poling field of congruent LiNbO3 and LiTaO3 crystal-based nonlinear optical devices and for the production of domain structures with precise reproducibility of the main parameters by depositing a thin layer of a stoichiometric LiNbO3 film on the Z-face of a congruent LiNbO3 or LiTaO3 wafer. A new domain nucleation, evolution and stabilization process is provided to afford a uniform, short period domain superstructure for the conversion of near infra-red light to near ultraviolet, blue and green light.
摘要翻译：一种用于减少一致的LiNbO 3和LiTaO 3 晶体的非线性光学器件的极化场的方法，并且通过沉积具有主要参数的精确再现性来制备畴结构在一致的LiNbO 3或LiT 3 O 3晶片的Z面上的化学计量的LiNbO 3膜薄层。提供了一个新的域成核，演化和稳定过程，以提供均匀的短周期域上层结构，用于将近红外光转换为近紫外线，蓝光和绿光。

8. 发明授权

US06674144B1 Process for forming damascene-type isolation structure for integrated circuit 有权
标题翻译：用于形成用于集成电路的镶嵌型隔离结构的工艺
公开(公告)号：US06674144B1
公开(公告)日：2004-01-06
申请号：US10269125
申请日：2002-10-11
申请人： Stepan Essaian
发明人： Stepan Essaian
IPC分类号： H01L27095
CPC分类号： H01L29/66242 , H01L21/76224
摘要： Isolation of a heterojunction bipolar transistor device in an integrated circuit is accomplished by forming the device within a trench in dielectric material overlying single crystal silicon. Precise control over the thickness of the initially-formed dielectric material ultimately determines the depth of the trench and hence the degree of isolation provided by the surrounding dielectric material. The shape and facility of etching of the trench may be determined through the use of etch-stop layers and unmasked photoresist regions of differing widths. Once the trench in the dielectric material is formed, the trench is filled with selectively and/or nonselectively grown epitaxial silicon. The process avoids complex and defect-prone deep trench masking, deep trench silicon etching, deep trench liner formation, and dielectric reflow steps associated with conventional processes.
摘要翻译：集成电路中的异质结双极晶体管器件的隔离通过在覆盖单晶硅的介电材料的沟槽内形成器件来实现。对初始形成的电介质材料的厚度的精确控制最终决定了沟槽的深度，从而确定了由周围介质材料提供的隔离度。可以通过使用不同宽度的蚀刻停止层和未掩模的光致抗蚀剂区域来确定沟槽的蚀刻的形状和设施。一旦形成了电介质材料中的沟槽，则沟槽被选择性地和/或非选择地生长的外延硅填充。该工艺避免了与常规工艺相关的复杂且易出现的深沟槽掩模，深沟槽硅蚀刻，深沟槽衬垫形成和介电回流步骤。

9. 发明授权

US08649404B2 Compact and efficient visible laser source with high speed modulation 失效
标题翻译：紧凑高效的可见激光源，具有高速调制
公开(公告)号：US08649404B2
公开(公告)日：2014-02-11
申请号：US13322778
申请日：2009-05-27
申请人： Stepan Essaian , Dzhakhangir Khaydarov , Andrei Shchegrov
发明人： Stepan Essaian , Dzhakhangir Khaydarov , Andrei Shchegrov
IPC分类号： H01S3/11
CPC分类号： H01S3/109 , G02F1/3775 , H01S3/0617 , H01S3/0621 , H01S3/0623 , H01S3/0627 , H01S3/08045 , H01S3/08054 , H01S3/0815 , H01S3/09415 , H01S3/1115 , H01S3/1611 , H01S3/1618 , H01S3/1673 , H01S3/17
摘要： A compact optically-pumped solid-state laser designed for efficient nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. These crystals contain dopants such as MgO or ZnO and/or have a specified degree of stoichiometry that ensures high reliability. The laser includes a solid-state gain media chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN or PPZnOLT for efficient frequency doubling of the fundamental infrared laser beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources. Also described design of the continuously operated laser with an electro-optic element for modulation of the intensity of the laser output at frequencies up to hundred of megahertz. Such modulation is desired for various applications, including compact projectors with high resolution.
摘要翻译：一种紧凑的光泵浦固态激光器，设计用于使用周期性极化的非线性晶体将有效的非线性腔内频率转换成所需的波长。这些晶体含有诸如MgO或ZnO的掺杂剂和/或具有确定高可靠性的特定化学计量的量。激光器包括固态增益介质芯片，例如Nd：YVO4，其还提供激光器的偏振控制; 以及诸如PPMgOLN或PPZnOLT的周期性极化非线性晶体芯片，用于将基本红外激光束有效倍频到可见波长范围。所描述的设计对于获得低成本的绿色和蓝色激光源是特别有利的。还描述了具有用于调制高达百兆赫兹频率的激光输出强度的电光元件的连续操作的激光器的设计。这种调制对于各种应用是期望的，包括具有高分辨率的紧凑型投影仪。

10. 发明申请

US20070253453A1 Solid-state laser arrays using 有权
标题翻译：固态激光阵列使用
公开(公告)号：US20070253453A1
公开(公告)日：2007-11-01
申请号：US11788917
申请日：2007-04-23
申请人： Stepan Essaian , Andrei Shchegrov
发明人： Stepan Essaian , Andrei Shchegrov
IPC分类号： H01S3/10 , H01S3/091
CPC分类号： H01S3/109 , H01S3/0405 , H01S3/042 , H01S3/0604 , H01S3/0606 , H01S3/0612 , H01S3/0627 , H01S3/0815 , H01S3/09415 , H01S3/1118 , H01S3/1611 , H01S3/1673
摘要： A compact solid-state laser array for nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. The crystals contain dopants such as MgO and/or have a specified stoichiometry. A preferred embodiment comprises a microchip laser cavity that includes a solid-state gain chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN, for efficient frequency doubling of a infrared laser pump beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources. The use of such high-efficiency pumps and nonlinear materials allows scaling of a compact, low-cost architecture to provide high output power levels in the blue/green wavelength range.
摘要翻译：使用周期性极化非线性晶体的非线性腔内频率转换成所需波长的紧凑型固态激光器阵列。晶体含有诸如MgO的掺杂剂和/或具有指定的化学计量。优选实施例包括微芯片激光腔，其包括固态增益芯片，例如Nd：YVO 4，其还提供激光器的偏振控制; 以及诸如PPMgOLN的周期性极化非线性晶体芯片，用于将红外激光泵浦光束有效倍频到可见波长范围。所描述的设计对于获得低成本的绿色和蓝色激光源是特别有利的。使用这种高效泵和非线性材料可以缩放紧凑的低成本架构，以在蓝/绿波长范围内提供高输出功率水平。

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