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    • 5. 发明申请
    • METHOD AND APPARATUS FOR SUPPORTING HANDOVER IN HETEROGENEOUS NETWORK
    • 在异构网络中支持切换的方法和装置
    • US20120190365A1
    • 2012-07-26
    • US13353613
    • 2012-01-19
    • Su-Ryong JEONGSeung-Hoon CHOISung-Eun PARKTae-Young KIM
    • Su-Ryong JEONGSeung-Hoon CHOISung-Eun PARKTae-Young KIM
    • H04W36/00H04W24/00H04W72/04
    • H04W36/30H04W36/04H04W36/14
    • A method for operating a terminal for supporting a handover in a heterogeneous network is provided. The method includes measuring received signal strength from a target small base station, so that a Signal-to-Noise Ratio (SNR) is estimated, when the SNR of the target small base station that considers a biased value for range expansion is greater than an SNR of a serving macro base station, determining whether an SNR of the target small base station that does not consider the biased value for the range expansion is equal to or less than a threshold, and when the SNR of the target small base station that does not consider the biased value for the range expansion is equal to or less than the threshold, transmitting indication information, informing that a low SNR is expected when the terminal performs a handover to the target small base station, to the serving macro base station.
    • 提供了一种用于操作终端以支持异构网络中的切换的方法。 该方法包括测量来自目标小型基站的接收信号强度,从而当考虑范围扩展的偏置值的目标小型基站的SNR大于一个时,估计信噪比(SNR) SNR,确定目标小型基站的SNR不考虑用于范围扩展的偏置值的SNR是否等于或小于阈值,以及当目标小型基站的SNR是否为 不考虑范围扩展的偏置值等于或小于阈值,发送指示信息,通知在终端执行向目标小型基站的切换时预期低SNR到服务宏基站。
    • 6. 发明申请
    • METHOD FOR FABRICATING SIDE CONTACT IN SEMICONDUCTOR DEVICE
    • 用于在半导体器件中制造侧面接触的方法
    • US20120149205A1
    • 2012-06-14
    • US13237281
    • 2011-09-20
    • Sung-Eun Park
    • Sung-Eun Park
    • H01L21/302
    • H01L21/823487H01L27/10876H01L27/10888
    • A method for fabricating a semiconductor device includes etching a substrate to form a body separated by a trench, forming liner layers that cover sidewalls of the body, forming a sacrificial layer that fills the trench and exposes an upper sidewall of each liner layer, forming a hard mask pattern that covers a first one of the liner layers having the exposed upper sidewalls, forming a barrier layer to be selectively grown over the exposed upper sidewalls of a second one of the liner layers, removing the hard mask pattern, removing a part of the sacrificial layer to expose a lower sidewall of a first one of the liner layers, and removing the lower sidewall of the first one of the liner layers to form a side contact.
    • 一种用于制造半导体器件的方法包括蚀刻衬底以形成由沟槽分隔的主体,形成覆盖主体侧壁的衬层,形成填充沟槽并暴露每个衬里层的上侧壁的牺牲层,形成 硬掩模图案,其覆盖具有暴露的上侧壁的衬垫层中的第一层,形成在第二衬垫层的暴露的上侧壁上有选择地生长的阻挡层,去除硬掩模图案, 所述牺牲层暴露所述衬里层中的第一层的下侧壁,以及移除所述衬里层中的所述衬里层的所述下侧壁以形成侧接触。