会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明授权
    • Polarizer and liquid crystal display using the same
    • 偏光镜和液晶显示器使用相同
    • US08755008B2
    • 2014-06-17
    • US13431702
    • 2012-03-27
    • Jae-Hong ParkJong-Sung ParkMin-Su KimSung-Hyun Kim
    • Jae-Hong ParkJong-Sung ParkMin-Su KimSung-Hyun Kim
    • G02F1/1335
    • G02B5/3033G02B1/105G02B1/11G02B1/14G02B1/16G02F1/133528G02F1/13452
    • Disclosed is a liquid crystal display and a polarizing plate used in the same. The liquid crystal display includes a liquid crystal cell and a first polarizing plate and a second polarizing plate respectively provided on each side of the liquid crystal cell. The first polarizing plate and the second polarizing plate each includes a polyvinyl alcohol polarizing film and protective films provided on both sides of the polyvinyl alcohol polarizing film, the protective films that are provided on surfaces opposite to the liquid crystal cell the first polarizing plate and the second polarizing plate each has the vapor transmissivity of 100 g/m Day or less, and the protective films that are provided on surfaces abutting the liquid crystal cell of the first polarizing plate and the second polarizing plate each has the vapor transmissivity of more than 1,500 g/m Day. When the protective films that are provided on surfaces opposite to the liquid crystal cell of the first polarizing plate and the second polarizing plate each has a UV absorption ability, the protective films that are provided on surfaces abutting the liquid crystal cell of the first polarizing plate and the second polarizing plate each has the vapor transmissivity of more than 200 g/m Day.
    • 公开了一种液晶显示器和偏光板。 液晶显示器包括分别设置在液晶单元的每一侧的液晶单元和第一偏振板和第二偏振板。 第一偏振板和第二偏振板各自包括聚乙烯醇偏振片和设置在聚乙烯醇偏振片两侧的保护膜,保护膜设置在与液晶单元相反的表面上,第一偏振片和 第二偏光板的蒸气透过率为100g / m以下,并且设置在与第一偏振片和第二偏光板的液晶单元抵接的面上的保护膜的蒸气透过率为1500以上 g / m天。 当设置在与第一偏振片和第二偏振片的液晶单元相对的表面上的保护膜各自具有UV吸收能力时,设置在与第一偏振板的液晶单元相邻的表面上的保护膜 并且第二偏振板各自具有大于200g / m 2日的蒸汽透过率。
    • 4. 发明授权
    • Semiconductor device and method for forming the same
    • 半导体装置及其形成方法
    • US08557660B2
    • 2013-10-15
    • US12650203
    • 2009-12-30
    • Sung Hyun Kim
    • Sung Hyun Kim
    • H01L21/336H01L29/66
    • H01L27/10876H01L27/10855H01L27/10885H01L27/10888H01L27/10894H01L29/4236H01L29/66621
    • A method for forming a semiconductor device is disclosed. The method for forming the semiconductor device includes forming a pad insulating layer on a semiconductor substrate, forming a recess by etching the pad insulating layer and the semiconductor substrate, forming a buried gate buried in the recess, forming an insulating layer for defining a bit line contact hole over the buried gate and the pad insulating layer, forming a bit line over a bit line contact for filling the bit line contact hole, and forming a storage electrode contact hole by etching the insulating layer and the pad insulating layer to expose the semiconductor substrate. As a result, the method increases the size of an overlap area between a storage electrode contact and an active region without an additional mask process, resulting in a reduction in cell resistance.
    • 公开了一种用于形成半导体器件的方法。 形成半导体器件的方法包括在半导体衬底上形成衬垫绝缘层,通过蚀刻衬垫绝缘层和半导体衬底形成凹陷,形成埋在凹槽中的掩埋栅极,形成用于限定位线的绝缘层 在掩埋栅极和焊盘绝缘层上方形成接触孔,在位线接触上形成位线以填充位线接触孔,并通过蚀刻绝缘层和焊盘绝缘层形成存储电极接触孔,以暴露半导体 基质。 结果,该方法增加了存储电极接触和有源区域之间的重叠区域的尺寸,而没有额外的掩模处理,导致电池电阻降低。