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1. 发明授权

US07687832B2 Method of fabricating a storage gate pixel design 有权
标题翻译：制造存储门像素设计的方法
公开(公告)号：US07687832B2
公开(公告)日：2010-03-30
申请号：US11516731
申请日：2006-09-07
申请人： Inna Patrick , Sungkwon C. Hong
发明人： Inna Patrick , Sungkwon C. Hong
IPC分类号： H01L27/148 , H01L29/74 , H01L29/768
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689
摘要： A method of fabricating a pixel cell having a shutter gate structure. First and second charge barriers are respectively created between a photodiode and a first charge storage region and between the first storage region and a floating diffusion region. A global shutter gate is formed to control the charge barrier and transfer charges from the photodiode to the first charge storage region by effectively lowering the first charge barrier. A transfer transistor acts to transfer charges from the first storage region to the floating diffusion region by reducing the second charge barrier.
摘要翻译：一种制造具有快门门结构的像素单元的方法。分别在光电二极管和第一电荷存储区之间以及在第一存储区域和浮动扩散区域之间产生第一和第二电荷势垒。形成全局快门闸门，通过有效降低第一电荷势垒来控制电荷势垒，并将电荷从光电二极管转移到第一电荷存储区。转移晶体管用于通过减少第二电荷势垒将电荷从第一存储区转移到浮动扩散区。

2. 发明授权

US07498623B2 Image sensor with floating diffusion gate capacitor 有权
标题翻译：具有浮动扩散栅极电容器的图像传感器
公开(公告)号：US07498623B2
公开(公告)日：2009-03-03
申请号：US11399311
申请日：2006-04-07
申请人： Sungkwon C. Hong
发明人： Sungkwon C. Hong
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H04N5/335 , H04N5/3559 , H04N5/3591
摘要： Pixel cells are provided which employ a gate capacitor associated with the floating diffusion node to selectively increase the storage capacity of the floating diffusion node. The gate capacitor can be formed at the same time as the same process steps used to form other gates of the pixel cells. The inherent capacity of the storage node alone may be sufficient under low light conditions. Higher light conditions may result in selective activation of the gate capacitor, thus increasing the capacity of the storage node with the additional capacity provided by the gate capacitor. The invention produces high dynamic range and high output signal without charge sharing or lag output signal. Methods of forming such pixel cells can be applied in CMOS and CCD imaging devices, image pixel arrays in CMOS and CCD imaging devices, and CMOS and CCD imager systems.
摘要翻译：提供像素单元，其使用与浮动扩散节点相关联的栅极电容器来选择性地增加浮动扩散节点的存储容量。栅极电容器可以与用于形成像素单元的其它栅极的相同的工艺步骤同时形成。存储节点单独的固有容量在低光条件下可能是足够的。较高的光照条件可能导致栅极电容器的选择性激活，从而通过栅极电容器提供的附加容量增加存储节点的容量。本发明产生高动态范围和高输出信号，无电荷共享或滞后输出信号。形成这种像素单元的方法可以应用于CMOS和CCD成像器件，CMOS和CCD成像器件中的图像像素阵列以及CMOS和CCD成像器系统。

3. 发明授权

US07446807B2 Imager pixel with capacitance for boosting reset voltage 有权
标题翻译：具有用于升压复位电压的电容电路的成像器像素
公开(公告)号：US07446807B2
公开(公告)日：2008-11-04
申请号：US11002281
申请日：2004-12-03
申请人： Sungkwon C. Hong
发明人： Sungkwon C. Hong
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643 , H04N5/374 , H04N5/3745
摘要： A pixel cell in which a capacitance is coupled between a storage node and a row select transistor and another capacitance is coupled between a storage node and a voltage supply or ground source potential to boost a reset voltage.
摘要翻译：其中电容耦合在存储节点和行选择晶体管之间的像素单元，另一电容耦合在存储节点和电压源或地源电位之间，以升高复位电压。

4. 发明授权

US07830412B2 Method and apparatus for shielding correction pixels from spurious charges in an imager 有权
标题翻译：用于屏蔽成像器中的伪电荷的校正像素的方法和装置
公开(公告)号：US07830412B2
公开(公告)日：2010-11-09
申请号：US11207811
申请日：2005-08-22
申请人： Kalairaja Chinnaveerappan , Sungkuk Hong , Ji Soo Lee , Sungkwon C. Hong
发明人： Kalairaja Chinnaveerappan , Sungkuk Hong , Ji Soo Lee , Sungkwon C. Hong
IPC分类号： H04N5/225 , H01L23/552
CPC分类号： H01L27/14654 , H01L27/1463
摘要： A barrier for isolating the dark correction pixels from spurious charges within an image sensor. The barrier comprises a charge absorbing region in a substrate electrically connected to a voltage source terminal. The charge absorbing region completely surrounds the dark correction region of a pixel array. The charge absorbing region absorbs carriers generated by lateral diffusion, near-infrared and infrared light reflected from the bottom of the silicon substrate, and other sources. This absorbing region prevents carriers from being absorbed into the dark correction pixel cells and causing image correction distorting effects.
摘要翻译：用于将暗校正像素与图像传感器内的杂散电荷隔离的屏障。阻挡层包括电连接到电压源端子的衬底中的电荷吸收区域。电荷吸收区域完全围绕像素阵列的暗校正区域。电荷吸收区吸收由硅衬底的底部反射的横向扩散，近红外和红外光产生的载流子等。该吸收区域防止载流子被吸收到暗校正像素单元中并引起图像校正失真效应。

5. 发明授权

US07635624B2 Dual gate structure for imagers and method of formation 有权
标题翻译：用于成像器的双栅结构和形成方法
公开(公告)号：US07635624B2
公开(公告)日：2009-12-22
申请号：US11273391
申请日：2005-11-15
申请人： Sungkwon C. Hong
发明人： Sungkwon C. Hong
IPC分类号： H01L21/6242
CPC分类号： H01L27/0623 , H01L21/28052 , H01L21/823842 , H01L27/10873 , H01L27/14643 , H01L27/14689 , H01L27/148 , H01L28/55
摘要： A device, as in an integrated circuit, includes diverse components such as transistors and capacitors. After conductive layers for all types of components are produced, a silicide layer is provided over conductive layers, reducing resistance. The device can be an imager in which pixels in an array includes a capacitor and readout circuitry with NMOS transistors. Periphery circuitry around the array can include PMOS transistors. Because the silicide layer is formed after the conductive layers, it is not exposed to high temperatures and, therefore, migration and cross-contamination of dopants is reduced.
摘要翻译：像集成电路中的器件包括诸如晶体管和电容器的不同部件。在制造用于所有类型的部件的导电层之后，在导电层上提供硅化物层，降低电阻。该器件可以是其中阵列中的像素包括电容器和具有NMOS晶体管的读出电路的成像器。阵列周围的周边电路可以包括PMOS晶体管。由于在导电层之后形成硅化物层，所以不会暴露在高温下，因此掺杂剂的迁移和交叉污染降低。

6. 发明申请

US20090190014A1 WIDE DYNAMIC RANGE SENSOR HAVING A PINNED DIODE WITH MULTIPLE PINNED VOLTAGES 有权
标题翻译：具有多个PINNED电压的带有二极管的宽动态范围传感器
公开(公告)号：US20090190014A1
公开(公告)日：2009-07-30
申请号：US12405351
申请日：2009-03-17
申请人： Sungkwon C. Hong , Alex Krymski
发明人： Sungkwon C. Hong , Alex Krymski
IPC分类号： H04N5/335
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14654 , H01L27/14689
摘要： A pixel cell has controlled photosensor anti-blooming leakage by having dual pinned voltage regions, one of which is used to set the anti-blooming characteristics of the photosensor. Additional exemplary embodiments also employ an anti-blooming transistor in conjunction with the dual pinned photosensor. Other exemplary embodiments provide a pixel with two pinned voltage regions and two anti-blooming transistors. Methods of fabricating the exemplary pixel cells are also disclosed.
摘要翻译：像素单元通过具有双引脚电压区域来控制光电传感器防起霜泄漏，其中一个用于设置光电传感器的抗起霜特性。另外的示例性实施例还结合双引线光电传感器采用防喷射晶体管。其它示例性实施例为像素提供了两个钉扎电压区域和两个防喷射晶体管。还公开了制造示例性像素单元的方法。

7. 发明申请

US20090134313A1 4T CMOS IMAGE SENSOR WITH FLOATING DIFFUSION GATE CAPACITOR 有权
标题翻译： 4T CMOS图像传感器，带浮动扩散门电容器
公开(公告)号：US20090134313A1
公开(公告)日：2009-05-28
申请号：US12362944
申请日：2009-01-30
申请人： Sungkwon C. Hong
发明人： Sungkwon C. Hong
IPC分类号： H01L31/08
CPC分类号： H01L27/14609 , H04N5/335 , H04N5/3559 , H04N5/3591
摘要： Pixel cells are provided which employ a gate capacitor associated with the floating diffusion node to selectively increase the storage capacity of the floating diffusion node. The gate capacitor can be formed at the same time as the same process steps used to form other gates of the pixel cells. The inherent capacity of the storage node alone may be sufficient under low light conditions. Higher light conditions may result in selective activation of the gate capacitor, thus increasing the capacity of the storage node with the additional capacity provided by the gate capacitor. The invention produces high dynamic range and high output signal without charge sharing or lag output signal. Methods of forming such pixel cells can be applied in CMOS and CCD imaging devices, image pixel arrays in CMOS and CCD imaging devices, and CMOS and CCD imager systems.
摘要翻译：提供像素单元，其使用与浮动扩散节点相关联的栅极电容器来选择性地增加浮动扩散节点的存储容量。栅极电容器可以与用于形成像素单元的其它栅极的相同的工艺步骤同时形成。存储节点单独的固有容量在低光条件下可能是足够的。较高的光照条件可能导致栅极电容器的选择性激活，从而通过栅极电容器提供的附加容量增加存储节点的容量。本发明产生高动态范围和高输出信号，无电荷共享或滞后输出信号。形成这种像素单元的方法可以应用于CMOS和CCD成像器件，CMOS和CCD成像器件中的图像像素阵列以及CMOS和CCD成像器系统。

8. 发明授权

US07164161B2 Method of formation of dual gate structure for imagers 有权
标题翻译：形成用于成像器的双栅极结构的方法
公开(公告)号：US07164161B2
公开(公告)日：2007-01-16
申请号：US10714670
申请日：2003-11-18
申请人： Sungkwon C. Hong
发明人： Sungkwon C. Hong
IPC分类号： H01L27/108
CPC分类号： H01L27/0623 , H01L21/28052 , H01L21/823842 , H01L27/10873 , H01L27/14643 , H01L27/14689 , H01L27/148 , H01L28/55
摘要： A device, as in an integrated circuit, includes diverse components such as transistors and capacitors. After conductive layers for all types of components are produced, a silicide layer is provided over conductive layers, reducing resistance. The device can be an imager in which pixels in an array includes a capacitor and readout circuitry with NMOS transistors. Periphery circuitry around the array can include PMOS transistors. Because the silicide layer is formed after the conductive layers, it is not exposed to high temperatures and, therefore, migration and cross-contamination of dopants is reduced.
摘要翻译：像集成电路中的器件包括诸如晶体管和电容器的不同部件。在制造用于所有类型的部件的导电层之后，在导电层上提供硅化物层，降低电阻。该器件可以是其中阵列中的像素包括电容器和具有NMOS晶体管的读出电路的成像器。阵列周围的周边电路可以包括PMOS晶体管。由于在导电层之后形成硅化物层，所以不会暴露在高温下，因此掺杂剂的迁移和交叉污染降低。

9. 发明授权

US06900507B1 Apparatus with silicide on conductive structures 有权
标题翻译：具有硅化物导电结构的装置
公开(公告)号：US06900507B1
公开(公告)日：2005-05-31
申请号：US10751941
申请日：2004-01-07
申请人： Sungkwon C. Hong
发明人： Sungkwon C. Hong
IPC分类号： H01L27/146 , H01L27/148 , H01L29/72
CPC分类号： H01L27/0629 , H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14683 , H01L27/14689 , H01L28/60
摘要： Exemplary embodiments of the invention provide pixel circuits having transistors with silicide on top of their gate stacks. In the exemplary embodiments, silicide forming material does not contaminate other components such as the photoconversion devices of an imager integrated circuit (IC). The photoconversion devices are blocked during silicide formation and are therefore not contaminated with silicide or metallic components. In other exemplary embodiments, each pixel of an imager also includes an optional in-pixel capacitor that has stabilized capacitance versus voltage characteristics due to its metal-dielectric-polysilicon structure, where the metal is a metal silicide over a conductive silicon layer.
摘要翻译：本发明的示例性实施例提供了具有在其栅极堆叠顶部具有硅化物的晶体管的像素电路。在示例性实施例中，硅化物形成材料不会污染诸如成像器集成电路（IC）的光电转换器件的其它部件。在硅化物形成期间，光电转换器件被阻塞，因此不会被硅化物或金属元件污染。在其他示例性实施例中，成像器的每个像素还包括可选的像素内电容器，其由于其金属 - 电介质 - 多晶硅结构而具有稳定的电容对电压特性，其中金属是导电硅层上的金属硅化物。

10. 发明授权

US07279672B2 Image sensor having pinned floating diffusion diode 有权
标题翻译：图像传感器具有固定的浮动扩散二极管
公开(公告)号：US07279672B2
公开(公告)日：2007-10-09
申请号：US11433350
申请日：2006-05-15
申请人： Sungkwon C. Hong
发明人： Sungkwon C. Hong
IPC分类号： H01L27/00 , H01L31/062
CPC分类号： H01L27/14609 , H01L27/1463 , H01L27/14643 , H01L27/14689 , H04N5/35527 , H04N5/3559
摘要： The present invention provides an image sensor having a pinned floating diffusion region in addition to a pinned photodiode. The pinned floating diffusion region increases the capacity of the sensor to store charge, increases the dynamic range of the sensor and widens intra-scene intensity variation.
摘要翻译：本发明提供一种除了钉扎光电二极管之外还具有固定的浮动扩散区域的图像传感器。固定的浮动扩散区域增加了传感器存储电荷的容量，增加了传感器的动态范围，并且扩大了场景内强度的变化。

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