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1. 发明申请

US20190123089A1 PIXEL CELL AND ITS METHOD FOR APPLYING VOLTAGE GENERATED IN A PHOTOSENSOR TO A GATE CAPACITANCE AND ALTERNATELY RESETTING THE APPLIED VOLTAGE 审中-公开
公开(公告)号：US20190123089A1
公开(公告)日：2019-04-25
申请号：US16174154
申请日：2018-10-29
申请人： Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.
发明人： Jens DOEGE
IPC分类号： H01L27/146 , H04N5/374 , H01L27/148 , G01R19/04 , H04N3/14 , H04N5/378 , H04N5/335 , H03M1/12 , H04N5/232
CPC分类号： H01L27/14643 , G01R19/04 , H01L27/148 , H03M1/124 , H04N3/1512 , H04N5/23245 , H04N5/335 , H04N5/374 , H04N5/378
摘要： A pixel cell, and a method of use thereof, the pixel cell including: an output, a photosensor configured to generate a first measuring current in a first measurement cycle and a second measuring current in a second measurement cycle as a function of radiation, an output node, a power storage device configured so that in a first operating mode a current can be injected by the power storage device as a function of the first measuring current, and so that in a second operating mode the power storage device is configured to hold the injected current so that the injected current can be detected at the output node, and a switching unit configured to form a difference between the injected current and the second measuring current at the output node in a reading cycle and to couple the output node to the output.

2. 发明申请

US20180323307A1 IMAGING ELEMENT, ELECTRONIC APPLIANCE, METHOD FOR DRIVING IMAGING DEVICE, AND METHOD FOR DRIVING ELECTRONIC APPLIANCE 审中-公开
公开(公告)号：US20180323307A1
公开(公告)日：2018-11-08
申请号：US16038529
申请日：2018-07-18
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Takayuki Ikeda
IPC分类号： H01L29/786 , H01L27/148 , H01L27/146
CPC分类号： H01L29/7869 , H01L27/146 , H01L27/14621 , H01L27/14632 , H01L27/14643 , H01L27/148 , H01L29/786
摘要： An imaging element which is capable of obtaining a piece of image data by performing light exposure plural times is provided. In addition, an imaging element which is capable of obtaining image data with little noise is provided. Furthermore, an imaging device with reduced power consumption is provided. In an imaging element including a pixel, the pixel includes a photodiode, a transistor including an oxide semiconductor layer, a diode, and a charge retention portion. The polarity of an electrode of the photodiode which is connected to the transistor is the same as that of an electrode of the diode which is connected to the transistor.

3. 发明申请

US20180174871A1 BONDING APPARATUS 审中-公开
公开(公告)号：US20180174871A1
公开(公告)日：2018-06-21
申请号：US15838713
申请日：2017-12-12
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Joong-Ha LEE , Sang-Yoon KIM , YoungBum KIM , Hui-Jae KIM , SeungDae SEOK , Jaebong SHIN , Byungjoon LEE , Yongin LEE , Jaeyeon PYO
IPC分类号： H01L21/67 , H01L21/683
CPC分类号： H01L21/67144 , H01L21/67092 , H01L21/67259 , H01L21/681 , H01L21/6838 , H01L27/148
摘要： A bonding apparatus includes a stage supporting a substrate, a first bonding head at a first side of the stage, the first bonding head to pick up a first chip and to bond the picked-up first chip onto the substrate, a second bonding head at a second side of the stage, the second bonding head to pick up a second chip and to bond the picked-up second chip onto the substrate, and a first image acquisition unit over a movement path of the stage to acquire an image of the stage.

4. 发明授权

US09979914B2 Imaging device 有权
公开(公告)号：US09979914B2
公开(公告)日：2018-05-22
申请号：US15451567
申请日：2017-03-07
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Sanshiro Shishido , Masashi Murakami
IPC分类号： H04N3/14 , H04N5/335 , H04N5/374 , H04N5/369 , H04N5/378 , H01L27/148 , H04N5/363
CPC分类号： H04N5/3742 , G01N21/6408 , H01L27/148 , H04N5/363 , H04N5/3696 , H04N5/378
摘要： An imaging device includes first and second pixel cells. The first and second pixel cells each include: a photoelectric converter that generates charge; a first charge transfer channel that has a first end electrically connected to the photoelectric converter, and a second end, the charge transfer channel transferring the charge in a direction from the first end toward the second end; a second charge transfer channel that branches from a position of the charge transfer channel, the second charge transfer channel transferring at least a part of the charge; and a charge accumulator that accumulates charge transferred via the second charge transfer channel. Distances from the first end to the position in the direction of the first and second pixel cells are different from each other.

5. 发明授权

US09972656B2 Image sensor and method of reading out an image sensor 有权
公开(公告)号：US09972656B2
公开(公告)日：2018-05-15
申请号：US13687258
申请日：2012-11-28
申请人： Arnold & Richter Cine Technik GmbH & Co. Betriebs KG
发明人： Michael Cieslinski
IPC分类号： H01L27/148 , H04N5/378
CPC分类号： H01L27/148 , H04N5/378
摘要： An image sensor, in particular a CMOS image sensor, for electronic cameras includes a plurality of light-sensitive pixels arranged in rows and columns for generating exposure-dependent pixel signals. A plurality of column lines, at least one precharge circuit for charging or discharging the column lines and at least one column readout circuit for reading out the pixel signals of the respective column are associated with a respective column. The image sensor has at least one switching device which is adapted to couple, in a first switch state, one of the column lines of a respective column to the precharge circuit and another one of the column lines of the respective column to the column readout circuit.

6. 发明授权

US09887230B2 Separation type unit pixel of image sensor having three-dimensional structure 有权
公开(公告)号：US09887230B2
公开(公告)日：2018-02-06
申请号：US14430727
申请日：2013-09-24
申请人： SiliconFile Technologies Inc.
发明人： Jae Won Eom
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14643 , H01L27/14609 , H01L27/14612 , H01L27/14634 , H01L27/14636 , H01L27/148 , H04N5/3745 , H04N5/37457
摘要： The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing transmission efficient of a charge generated through a photodiode to a floating diffusion area. The separation type unit pixel may include a first wafer on which a photodiode and a transmission transistor are formed and a second wafer on which a reset transistor and a source follower transistor are formed. In particular, the photodiode has a positive region to which an N_ground voltage is applied, the N_ground voltage having a lower voltage level than a ground voltage used in the second wafer.

7. 发明授权

US09787933B2 Solid-state imaging device and electronic apparatus 有权
公开(公告)号：US09787933B2
公开(公告)日：2017-10-10
申请号：US15366887
申请日：2016-12-01
申请人： Sony Corporation
发明人： Hideo Kido , Atsuhiko Yamamoto , Akihiro Yamada
IPC分类号： H04N5/378 , H04N5/376 , H01L27/146 , H04N5/3745 , H04N5/374 , H01L27/148
CPC分类号： H04N5/378 , H01L27/14603 , H01L27/1461 , H01L27/14612 , H01L27/14614 , H01L27/14625 , H01L27/14636 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3742 , H04N5/3745 , H04N5/3765
摘要： A solid-state imaging device includes a pixel region in which shared pixels which share pixel transistors in a plurality of photoelectric conversion portions are two-dimensionally arranged. The shared pixel transistors are divisionally arranged in a column direction of the shared pixels, the pixel transistors shared between neighboring shared pixels are arranged so as to be horizontally reversed or/and vertically crossed, and connection wirings connected to a floating diffusion portion, a source of a reset transistor and a gate of an amplification transistor in the shared pixels are arranged along the column direction.

8. 发明授权

US09778377B2 Method of performing spectroscopy in a transmission charged-particle microscope 有权
公开(公告)号：US09778377B2
公开(公告)日：2017-10-03
申请号：US15072929
申请日：2016-03-17
申请人： FEI Company
发明人： Luigi Mele , Albertus Aemillius Seyno Sluijterman , Gerard Nicolaas Anne van Veen
IPC分类号： H01J37/244 , H01J37/28 , G01T1/20 , H01L31/107 , H04N5/32 , H01L27/146 , H01L27/148
CPC分类号： G01T1/2006 , H01J37/244 , H01J37/28 , H01J2237/057 , H01J2237/24485 , H01J2237/2802 , H01J2237/2804 , H01L27/14643 , H01L27/148 , H01L31/107 , H04N5/32
摘要： A Transmission Charged-Particle Microscope comprises a source of charged particles which are then directed by an illuminator onto a specimen supported by a specimen holder. Charged particles transmitted through the specimen may undergo energy loss with a distribution of losses providing information about the specimen. A dispersing device disperses the transmitted charged particles into an energy-resolved array of spectral sub-beams distributed along a dispersion direction. The dispersed charged particles are detected by a detector comprising an assembly of sub-detectors arranged along said dispersion direction, whereby different sub-detectors are adjustable to have different detection sensitivities.

9. 发明授权

US09666621B2 Solid-state imaging device 有权
公开(公告)号：US09666621B2
公开(公告)日：2017-05-30
申请号：US14592783
申请日：2015-01-08
申请人： CANON KABUSHIKI KAISHA
发明人： Kazuo Yamazaki , Tetsuya Itano , Nobuyuki Endo , Kyouhei Watanabe
IPC分类号： H01L27/146 , H04N5/235 , H04N5/355 , H04N5/3745 , H04N5/378
CPC分类号： H01L27/14623 , H01L27/14607 , H01L27/1463 , H01L27/14634 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/148 , H04N5/3559 , H04N5/372 , H04N5/37452 , H04N5/37455 , H04N5/378
摘要： In a solid-state imaging device, a photoelectric conversion unit, a transfer transistor, and at least a part of electric charge holding unit, among pixel constituent elements, are disposed on a first semiconductor substrate. An amplifying transistor, a signal processing circuit other than a reset transistor, and a plurality of common output lines, to which signals are read out from a plurality of pixels, are disposed on a second semiconductor substrate.

10. 发明申请

US20160315108A1 RADIATION IMAGE SENSOR 有权
标题翻译：辐射图像传感器
公开(公告)号：US20160315108A1
公开(公告)日：2016-10-27
申请号：US15102376
申请日：2014-11-28
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Kazuki FUJITA , Minoru ICHIKAWA , Harumichi MORI
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/148 , H01L27/14634 , H01L27/14636
摘要： A radiation image sensor includes a charge generation section and, a circuit board accumulating and transferring charge generated in the charge generation section. The circuit board includes a semiconductor substrate, a capacitive section accumulating the charge generated in the charge generation section, and a MOS transistor in the semiconductor substrate. The MOS transistor includes one end connected to the capacitive section and another end connected to a wire transferring the charge. The capacitive section includes a partial region of the semiconductor substrate, a conductor layer disposed on the partial region and electrically connected to the charge generation section, and an insulating layer interposed between the partial region and the conductor layer.
摘要翻译：辐射图像传感器包括电荷产生部分和积累并传送在电荷产生部分中产生的电荷的电路板。电路板包括半导体衬底，积聚电荷产生部分中产生的电荷的电容部分和半导体衬底中的MOS晶体管。 MOS晶体管包括连接到电容部分的一端和连接到传送电荷的电线的另一端。电容部分包括半导体衬底的部分区域，设置在部分区域上并电连接到电荷产生部分的导体层，以及插入在部分区域和导体层之间的绝缘层。

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