专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110092065A1 SEMICONDUCTOR DEVICE SUITABLE FOR A STACKED STRUCTURE 有权
标题翻译：适用于堆叠结构的半导体器件
公开(公告)号：US20110092065A1
公开(公告)日：2011-04-21
申请号：US12976089
申请日：2010-12-22
申请人： Eiji YOSHIDA , Takao OHNO , Yoshito AKUTAGAWA , Koji SAWAHATA , Masataka MIZUKOSHI , Takao NISHIMURA , Akira TAKASHIMA , Mitsuhisa WATANABE
发明人： Eiji YOSHIDA , Takao OHNO , Yoshito AKUTAGAWA , Koji SAWAHATA , Masataka MIZUKOSHI , Takao NISHIMURA , Akira TAKASHIMA , Mitsuhisa WATANABE
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/13008 , H01L2224/13009 , H01L2224/13025 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.
摘要翻译：提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。通过蚀刻形成孔，电极焊盘用作蚀刻停止层。埋入电极形成在孔中。该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

2. 发明申请

US20090230493A1 SOLID-STATE IMAGING DEVICE AND METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE 有权
标题翻译：固态成像装置和制造固态成像装置的方法
公开(公告)号：US20090230493A1
公开(公告)日：2009-09-17
申请号：US12401284
申请日：2009-03-10
申请人： Naoyuki WATANABE , Takao OHNO , Susumu MORIYA , Izumi KOBAYASHI
发明人： Naoyuki WATANABE , Takao OHNO , Susumu MORIYA , Izumi KOBAYASHI
IPC分类号： H01L31/02 , H01L21/66 , H01L23/544
CPC分类号： H01L23/544 , H01L24/48 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L27/14683 , H01L2223/5442 , H01L2223/54473 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/01077 , H01L2924/12041 , H01L2924/15311 , H01L2924/16195 , H01L2924/16235 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A solid-state imaging device includes: a solid-state imaging element having a light-receiving area; a transparent member disposed so as to oppose the light-receiving area; a supporting member configured to support the transparent member; a first mark disposed at either an upper surface of the transparent member or an upper surface of the supporting member; and a second mark disposed at an outer side of the light-receiving area, at an upper surface of the solid-state imaging element.
摘要翻译：固态成像装置包括：具有光接收区域的固态成像元件; 透明构件，其设置成与所述光接收区域相对; 支撑构件，其构造成支撑所述透明构件; 设置在所述透明构件的上表面或所述支撑构件的上表面的第一标记; 以及设置在光接收区域的外侧的第二标记，在固态成像元件的上表面处。

3. 发明申请

US20090061192A1 REFLECTIVE SHEET AND PRODUCTION METHOD THEREOF 审中-公开
标题翻译：反射片及其制作方法
公开(公告)号：US20090061192A1
公开(公告)日：2009-03-05
申请号：US11911435
申请日：2006-04-11
申请人： Kei Mizutani , Takashi Kushida , Satoshi Kitazawa , Takao Ohno , Koji Furuya
发明人： Kei Mizutani , Takashi Kushida , Satoshi Kitazawa , Takao Ohno , Koji Furuya
IPC分类号： B32B5/16
CPC分类号： G02B5/08 , G02B5/0808 , G02F1/133605 , Y10T428/249986
摘要： There is provided a reflective sheet made of self-sustaining porous sheet which comprises inert particles and a polyolefin and which has a porosity of 30 to 95% and a reflectivity at a wavelength of 550 nm of 60 to 120%. This reflective sheet can be reduced in thickness and weight while retaining sufficient reflectivity.
摘要翻译：提供由自持多孔片制成的反射片，其包含惰性颗粒和聚烯烃，其孔隙率为30〜95％，波长550nm的反射率为60〜120％。该反射片可以减小厚度和重量，同时保持足够的反射率。

4. 发明授权

US07407702B2 Polymetaphenylene isophthalamide-based polymer porous film, process for its production and battery separator 失效
标题翻译：聚邻苯二甲酰间苯二胺基聚合物多孔膜，其生产工艺及电池隔膜
公开(公告)号：US07407702B2
公开(公告)日：2008-08-05
申请号：US10776184
申请日：2004-02-12
申请人： Takao Ohno , Jiro Sadanobu , Tsutomu Nakamura , Susumu Honda , Toyoaki Ishiwata
发明人： Takao Ohno , Jiro Sadanobu , Tsutomu Nakamura , Susumu Honda , Toyoaki Ishiwata
IPC分类号： B32B5/22 , B01D39/14 , B05D1/22
CPC分类号： B32B27/08 , B01D67/0011 , B01D67/0016 , B01D69/02 , B01D69/141 , B01D71/56 , B01D2323/08 , B01D2323/12 , B01D2325/22 , B01D2325/24 , B32B27/18 , B32B27/304 , B32B27/34 , B32B27/36 , B32B38/0036 , B32B2305/026 , B32B2307/306 , B32B2307/724 , B32B2309/025 , B32B2377/00 , B32B2457/10 , C08J5/18 , C08J9/28 , C08J2201/0542 , C08J2377/10 , H01M2/1646 , H01M2/1653 , H01M2/166 , Y10T428/249978 , Y10T428/249979 , Y10T428/24998 , Y10T428/249981 , Y10T428/249986 , Y10T428/249991 , Y10T428/249992 , Y10T428/249993 , Y10T428/31725
摘要： A polymetaphenylene isophthalamide-based polymer porous film having a satisfactory porous structure that exhibits excellent gas permeability and heat resistance. It is produced by a process which comprises casting a dope of the polymetaphenylene isophthalamide-based polymer and coagulating it in a coagulating bath. The porous film may also contain inorganic whiskers, and a composite porous film may be formed in combination with a separate thermoplastic polymer film.
摘要翻译：具有令人满意的多孔结构的聚邻苯二甲酰间苯二胺系聚合物多孔膜具有优异的透气性和耐热性。它是通过一种方法生产的，该方法包括将聚邻苯二甲酰间苯二胺基聚合物的掺杂物浇铸并在凝固浴中凝结。多孔膜也可以含有无机晶须，并且复合多孔膜可以与单独的热塑性聚合物膜组合形成。

5. 发明申请

US20050167812A1 Semiconductor device, three-dimensional semiconductor device, and method of manufacturing semiconductor device 审中-公开
标题翻译：半导体器件，三维半导体器件以及半导体器件的制造方法
公开(公告)号：US20050167812A1
公开(公告)日：2005-08-04
申请号：US11062735
申请日：2005-02-23
申请人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
发明人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
IPC分类号： H01L21/768 , H01L23/31 , H01L23/48 , H01L23/485 , H01L23/522 , H01L25/065 , H01L29/76
CPC分类号： H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/13008 , H01L2224/13009 , H01L2224/13025 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.
摘要翻译：提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。通过蚀刻形成孔，电极焊盘用作蚀刻停止层。埋入电极形成在孔中。该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

6. 发明授权

US4830996A Ferroelectric ceramics 失效
标题翻译：铁电陶瓷
公开(公告)号：US4830996A
公开(公告)日：1989-05-16
申请号：US218550
申请日：1988-07-13
申请人： Nobuki Hirai , Yoshihisa Ushida , Takao Ohno
发明人： Nobuki Hirai , Yoshihisa Ushida , Takao Ohno
IPC分类号： C04B35/493 , H01L41/187
CPC分类号： C04B35/493 , H01L41/187
摘要： Ferroelectric ceramics represented by xPbTiO.sub.3 -yPbZrO.sub.3 -zPb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -mSrTiO.sub.3 -nSnO.sub.2 -pZnO-qBi.sub.2 O.sub.3 -rX wherein x,y,z,m,n,p,q and r represent amounts by mole, respectively, with the proviso that x+y+z being 1, Z is at least one oxide selected from the group consisting of Dy.sub.2 O.sub.3, Ta.sub.2 O.sub.5, and Y.sub.2 O.sub.3, and wherein x is from 0.25 to 0.50, y is from 0.05 to 0.70, z is from 0.05 to 0.70, m is from 0 to 0.10, n is from 0 to 0.04, p is from 0 to 0.04, q is from 0 to 0.02 and r is from 0.005 to 0.02. The disclosed ferroelectric ceramics have increased relative dielectric constant and/or electromechanical coupling factor, and are suitable for use as actuators.

7. 发明授权

US07884459B2 Semiconductor device suitable for a stacked structure 有权
标题翻译：适用于堆叠结构的半导体器件
公开(公告)号：US07884459B2
公开(公告)日：2011-02-08
申请号：US12210645
申请日：2008-09-15
申请人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
发明人： Eiji Yoshida , Takao Ohno , Yoshito Akutagawa , Koji Sawahata , Masataka Mizukoshi , Takao Nishimura , Akira Takashima , Mitsuhisa Watanabe
IPC分类号： H01L23/02
CPC分类号： H01L21/76898 , H01L23/3128 , H01L23/481 , H01L24/05 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L25/50 , H01L2224/02371 , H01L2224/0401 , H01L2224/05572 , H01L2224/06181 , H01L2224/13008 , H01L2224/13009 , H01L2224/13025 , H01L2224/131 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/45144 , H01L2225/06513 , H01L2225/06517 , H01L2225/06524 , H01L2225/06527 , H01L2225/06541 , H01L2225/06551 , H01L2225/06555 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/12042 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.
摘要翻译：提供一种半导体器件，其形成具有彼此堆叠的半导体器件的三维半导体器件。在该半导体器件中，在具有形成在外侧的主面上的集成电路单元和电极焊盘的硅半导体基板中形成有孔。通过蚀刻形成孔，电极焊盘用作蚀刻停止层。埋入电极形成在孔中。该嵌入电极用于将电极焊盘导电到硅半导体衬底的底侧的主表面。

8. 发明授权

US07726278B2 Internal combustion engine control apparatus 有权
标题翻译：内燃机控制装置
公开(公告)号：US07726278B2
公开(公告)日：2010-06-01
申请号：US12145001
申请日：2008-06-24
申请人： Keiichiro Sakaigaki , Takao Ohno , Akira Furuta
发明人： Keiichiro Sakaigaki , Takao Ohno , Akira Furuta
IPC分类号： F02D31/00
CPC分类号： F02D41/22 , F02D41/009 , F02D2041/0095 , F02D2250/06 , F02N11/0825 , F02N11/10 , F02N2250/04 , Y02T10/40 , Y02T10/48
摘要： In order to accurately detect an abnormal state of a rotation direction detection unit for detecting a rotation direction of a crank shaft, provided is an internal combustion engine control apparatus including: a rotation detection unit including the rotation direction detection unit for detecting the rotation direction of the crank shaft of an engine to output a rotation direction signal, and a rotation speed detection unit for outputting a pulse signal according to a rotation speed of the crank shaft; a stop position calculation unit for calculating, based on an output from the rotation detection unit, a stop position of the crank shaft when the engine stops; and an abnormal state detection unit for detecting the abnormal state of the rotation direction detection unit when an actual rotation direction of the crank shaft differs from the rotation direction of the crank shaft based on the rotation direction signal.
摘要翻译：为了精确地检测用于检测曲轴的旋转方向的旋转方向检测单元的异常状态，提供了一种内燃机控制装置，包括：旋转检测单元，包括：旋转方向检测单元，用于检测曲轴的旋转方向; 用于输出旋转方向信号的发动机的曲轴;以及转速检测单元，用于根据曲轴的转速输出脉冲信号; 停止位置计算单元，用于基于来自所述旋转检测单元的输出，计算当所述发动机停止时所述曲轴的停止位置; 以及异常状态检测单元，用于当曲轴的实际旋转方向与曲轴的旋转方向基于旋转方向信号不同时，检测旋转方向检测单元的异常状态。

9. 发明授权

US07273039B2 Control apparatus for vehicular internal combustion engine 有权
公开(公告)号：US07273039B2
公开(公告)日：2007-09-25
申请号：US11327433
申请日：2006-01-09
申请人： Takao Ohno , Akira Furuta
发明人： Takao Ohno , Akira Furuta
IPC分类号： F02D41/22
CPC分类号： F02D41/22 , F02D41/221 , F02D41/266
摘要： In a case where fuel injection system abnormality is detected, and fuel supply stop processing is carried out against the abnormality, since a judgment is made using a misfire judgment, in a case where the misfire judgment is carried out in a periodic measurement system, the reliability is low at the time of a periodic variation or in a low rotation region, and in a case where it is carried out in an ion detection system, the cost increases, and the calculation load of an internal combustion engine control apparatus by the misfire judgment processing increases. A control apparatus for a vehicular internal combustion engine of the invention includes an injector drive abnormality judgment unit to judge, based on an injector drive confirmation signal, drive abnormality of an injector corresponding to the injector drive confirmation signal, and the injector drive abnormality judgment unit judges abnormality of the injector drive confirmation signal based on a state of the injector drive confirmation signal.

10. 发明申请

US20050161793A1 Semiconductor device and stacked semiconductor device that can increase flexibility in designing a stacked semiconductor device 有权
标题翻译：半导体器件和叠层半导体器件可以增加设计堆叠半导体器件的灵活性
公开(公告)号：US20050161793A1
公开(公告)日：2005-07-28
申请号：US11042347
申请日：2005-01-26
申请人： Takao Ohno , Eiji Yoshida , Hiroshi Misawa
发明人： Takao Ohno , Eiji Yoshida , Hiroshi Misawa
IPC分类号： H01L21/60 , H01L23/02 , H01L23/12 , H01L23/31 , H01L23/52 , H01L23/538 , H01L25/04 , H01L25/065 , H01L27/146 , H01L31/0203
CPC分类号： H01L23/3114 , H01L23/3128 , H01L24/50 , H01L24/75 , H01L24/79 , H01L24/81 , H01L24/86 , H01L25/0657 , H01L27/14618 , H01L31/0203 , H01L2224/75 , H01L2224/75302 , H01L2224/81121 , H01L2224/8121 , H01L2224/81815 , H01L2225/06517 , H01L2225/0652 , H01L2225/06551 , H01L2225/06555 , H01L2225/06562 , H01L2225/06572 , H01L2225/06579 , H01L2225/06586 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01068 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15311 , H01L2924/181 , H01L2924/00
摘要： A semiconductor device includes a semiconductor element having a plurality of electrodes provided on one principal surface thereof and a wiring substrate having a conductive layer on an insulating substrate. The wiring substrate is arranged in a substantially U-shape along an outer edge of the semiconductor element. An end of the conductive layer of the wiring substrate is connected to the electrodes of the semiconductor element. The other end of the conductive layer extends in a direction opposite to the semiconductor element on the other principal surface side of the semiconductor element.
摘要翻译：半导体器件包括具有设置在其一个主表面上的多个电极的半导体元件和在绝缘基板上具有导电层的布线基板。布线基板沿着半导体元件的外边缘布置成大致U形。布线基板的导电层的端部与半导体元件的电极连接。导电层的另一端在与半导体元件的另一主面侧的半导体元件相反的方向上延伸。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式