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1. 发明申请

US20140220365A1 LAMINATED ELECTRODE 审中-公开
标题翻译：层压电极
公开(公告)号：US20140220365A1
公开(公告)日：2014-08-07
申请号：US14168544
申请日：2014-01-30
申请人： Hideya YAMADERA , Masaaki TSUCHIMORI , Takehiro KATO , Takahiro ITO
发明人： Hideya YAMADERA , Masaaki TSUCHIMORI , Takehiro KATO , Takahiro ITO
IPC分类号： H01L29/45
CPC分类号： H01L29/456 , H01L29/452
摘要： A laminated electrode disposed on a substrate includes a first layer disposed at a top surface and a second layer directly joined to the first layer. A material of the first layer is gold. A material of the second layer is nickel silicide.
摘要翻译：设置在基板上的层叠电极包括设置在顶面的第一层和与第一层直接接合的第二层。第一层的材料是金。第二层的材料是硅化镍。

2. 发明授权

US07513967B2 Molded fiber materials and methods and apparatus for making the same 有权
标题翻译：成型纤维材料及其制造方法和装置
公开(公告)号：US07513967B2
公开(公告)日：2009-04-07
申请号：US10381826
申请日：2001-09-27
申请人： Takehiro Kato , Kumiko Sango , Masato Nomura , Kazuo Hayakawa
发明人： Takehiro Kato , Kumiko Sango , Masato Nomura , Kazuo Hayakawa
IPC分类号： B29C65/00 , B28B17/00
CPC分类号： D04H1/70 , B27N3/002 , B27N3/14 , D04H1/425 , D04H1/4374 , D04H1/4382 , D04H1/558
摘要： A raw material including a mixture of a natural fiber and a thermoplastic fiber is supplied to a surface of a rotating rotary body. The natural and thermoplastic fibers are scattered toward a carrying surface of a conveyor belt by the rotational force of the rotary body. An air blower may direct pressurized air to the scattered raw material in order to further effect separation of the natural and thermoplastic fibers. Consequently, the natural fibers and the thermoplastic fibers are deposited such that the relative concentration of the natural fibers and the thermoplastic fibers gradually and seamlessly changes or varies across the thickness of depth of the resulting molded fiber material.
摘要翻译：将包含天然纤维和热塑性纤维的混合物的原料供给到旋转体的表面。天然和热塑性纤维通过旋转体的旋转力向传送带的承载表面散射。鼓风机可以将加压空气引导到分散的原料，以进一步实现天然和热塑性纤维的分离。因此，沉积天然纤维和热塑性纤维，使得天然纤维和热塑性纤维的相对浓度在所得模制纤维材料的深度厚度上逐渐且无缝地变化或变化。

3. 发明申请

US20070131167A1 Substrate processing apparatus and lid supporting apparatus for the substrate processing apparatus 有权
标题翻译：用于基板处理装置的基板处理装置和盖支撑装置
公开(公告)号：US20070131167A1
公开(公告)日：2007-06-14
申请号：US11506773
申请日：2006-08-21
申请人： Akira Kodashima , Shinichi Miyano , Takehiro Kato
发明人： Akira Kodashima , Shinichi Miyano , Takehiro Kato
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01L21/6719
摘要： A substrate processing apparatus which enables the work efficiency of maintenance to be improved. The substrate processing apparatus comprises a plurality of processing chambers 100 for carrying out plasma processing on a wafer to be processed. Each processing chamber 100 has a chamber lid 200 that can be suspended and supported by a crane unit 500. The crane unit 500 comprises an air cylinder 510 and a linear guide 520. The air cylinder 510 holds the chamber lid 200 movably in a vertical direction thereabove. The linear guide 520 holds the chamber lid 200 movably in a horizontal direction.
摘要翻译：能够提高维护工作效率的基板处理装置。基板处理装置包括用于对要处理的晶片执行等离子体处理的多个处理室100。每个处理室100具有可由起重机单元500悬挂和支撑的室盖200。起重机单元500包括气缸510和直线导轨520。气缸510沿着其上方的垂直方向可移动地保持室盖200。线性引导件520沿水平方向可移动地保持室盖200。

4. 发明授权

US10147633B2 Transfer apparatus and plasma processing system 有权
公开(公告)号：US10147633B2
公开(公告)日：2018-12-04
申请号：US13611327
申请日：2012-09-12
申请人： Shinji Himori , Takehiro Kato , Etsuji Ito
发明人： Shinji Himori , Takehiro Kato , Etsuji Ito
IPC分类号： B65G43/00 , B65G47/90 , H01L21/677 , H01L21/687
摘要： A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.

5. 发明授权

US09859146B2 Semiconductor manufacturing device and processing method 有权
公开(公告)号：US09859146B2
公开(公告)日：2018-01-02
申请号：US14238860
申请日：2012-08-13
申请人： Shinji Himori , Yoshiyuki Kobayashi , Takehiro Kato , Etsuji Ito
发明人： Shinji Himori , Yoshiyuki Kobayashi , Takehiro Kato , Etsuji Ito
IPC分类号： H01L21/00 , H01L21/687 , H01L21/306 , H01L21/67
CPC分类号： H01L21/68742 , H01L21/30604 , H01L21/67063
摘要： A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

6. 发明申请

US20150008479A1 IGBT AND IGBT MANUFACTURING METHOD 有权
标题翻译： IGBT和IGBT制造方法
公开(公告)号：US20150008479A1
公开(公告)日：2015-01-08
申请号：US14378366
申请日：2012-02-14
申请人： Takehiro Kato , Toru Onishi
发明人： Takehiro Kato , Toru Onishi
IPC分类号： H01L29/10 , H01L29/66 , H01L29/739
CPC分类号： H01L29/1095 , H01L29/0834 , H01L29/6634 , H01L29/66348 , H01L29/7396 , H01L29/7397
摘要： An IGBT manufacturing method is provided. The IGBT has an n-type emitter region, a p-type top body region, an n-type intermediate region, a p-type bottom body region, an n-type drift region, a p-type collector region, trenches penetrating the emitter region, the top body region, the intermediate region and the bottom body region from an upper surface of a semiconductor substrate and reaching the drift region, and gate electrodes formed in the trenches. The method includes forming the trenches on the upper surface of the semiconductor substrate, forming the insulating film in the trenches, forming an electrode layer on the semiconductor substrate and in the trenches after forming the insulating film, planarizing an upper surface of the electrode layer, and implanting n-type impurities to a depth of the intermediate region from the upper surface side of the semiconductor substrate after planarizing the upper surface of the electrode layer.
摘要翻译：提供了IGBT制造方法。 IGBT具有n型发射极区域，p型顶体区域，n型中间区域，p型底部区域，n型漂移区域，p型集电极区域，发射极区域，顶体区域，中间区域和底体区域，并且到达漂移区域，以及形成在沟槽中的栅极电极。该方法包括在半导体衬底的上表面上形成沟槽，在沟槽中形成绝缘膜，在半导体衬底上形成电极层，在形成绝缘膜之后在沟槽中形成电极层的上表面，以及在平坦化电极层的上表面之后，从半导体衬底的上表面侧将n型杂质注入到中间区域的深度。

7. 发明申请

US20140213055A1 SEMICONDUCTOR MANUFACTURING DEVICE AND PROCESSING METHOD 有权
标题翻译：半导体制造设备和处理方法
公开(公告)号：US20140213055A1
公开(公告)日：2014-07-31
申请号：US14238860
申请日：2012-08-13
申请人： Shinji Himori , Yoshiyuki Kobayashi , Takehiro Kato , Etsuji Ito
发明人： Shinji Himori , Yoshiyuki Kobayashi , Takehiro Kato , Etsuji Ito
IPC分类号： H01L21/687 , H01L21/67 , H01L21/306
CPC分类号： H01L21/68742 , H01L21/30604 , H01L21/67063
摘要： A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second. upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.
摘要翻译：半导体制造装置包括台，多个销和驱动单元。舞台包括安装表面。安装表面具有用于在其上安装基板的第一区域和用于在其上安装聚焦环的第二区域。第二区域设置成围绕第一区域。在台阶上形成多个孔。这些孔在穿过第一区域和第二区域之间的边界的同时沿着与安装表面相交的方向延伸。销设置在相应的孔中。每个销具有第一和第二上端表面。第二。上端表面设置在第一上端表面上方，并且相对于第一上端表面偏移到第一区域。驱动单元在上述方向上上下移动销。

8. 发明授权

US07416779B2 Fiber board and its producing method 有权
标题翻译：纤维板及其制作方法
公开(公告)号：US07416779B2
公开(公告)日：2008-08-26
申请号：US10663672
申请日：2003-09-17
申请人： Masanori Hashiba , Takehiro Kato , Kousuke Tamaki , Osamu Mito , Kazuya Matsumura , Tomomichi Fujiyama , Yuhei Maeda , Eiji Sugiyama , Takashi Inoh , Hiroshi Urayama , Hisashi Okuyama
发明人： Masanori Hashiba , Takehiro Kato , Kousuke Tamaki , Osamu Mito , Kazuya Matsumura , Tomomichi Fujiyama , Yuhei Maeda , Eiji Sugiyama , Takashi Inoh , Hiroshi Urayama , Hisashi Okuyama
IPC分类号： D04H1/00 , B32B1/08
CPC分类号： B27N3/002 , C08L67/04 , Y10T428/1369 , Y10T428/1372 , Y10T428/1393 , Y10T428/24132 , Y10T428/249924 , Y10T428/3179 , C08L2666/26
摘要： To provide a fiberboard capable of reducing a load on the environment at all states of producing, using, and abolishing and moreover having a high degree of bending strength and a high bending-strength retention rate at high temperature and high humidity so as to be usable for an automobile interior material or building material and a fiber-board producing method. The fiberboard is formed by mixing natural fiber with polylactic acid resin serving as a binder and has an apparent density of 0.2 g/cm3.
摘要翻译：为了提供能够在生产，使用和消除的所有状态下减轻环境负荷并且在高温高湿下具有高弯曲强度和高弯曲强度保持率的纤维板，以便可用用于汽车内部材料或建筑材料和纤维板制造方法。纤维板通过将天然纤维与作为粘合剂的聚乳酸树脂混合并具有0.2g / cm 3的表观密度而形成。

9. 发明申请

US20130062016A1 TRANSFER APPARATUS AND PLASMA PROCESSING SYSTEM 审中-公开
标题翻译：传送装置和等离子体处理系统
公开(公告)号：US20130062016A1
公开(公告)日：2013-03-14
申请号：US13611327
申请日：2012-09-12
申请人： Shinji HIMORI , Takehiro KATO , Etsuji ITO
发明人： Shinji HIMORI , Takehiro KATO , Etsuji ITO
IPC分类号： B65G49/00 , B05C13/00
CPC分类号： H01L21/68707 , B65G43/00 , B65G47/90 , H01L21/67709
摘要： A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.
摘要翻译：传送装置将要传送的物体传送到外壳上。传送装置包括传送臂，臂轴，多个电磁体和控制单元。传送臂在其前端具有拾取单元，并在水平方向上伸缩。要传送的物体被保持在拾取单元上。臂轴支撑传送臂。多个电磁铁通过在壳体中产生磁场而向上传递臂施加力。控制单元以这样的方式控制多个电磁体，即当传送臂在水平方向上延伸和缩回时，施加到传送臂的向上方向的力随着从转轴到臂的前端的长度而增加手臂增加。

10. 发明授权

US09608071B2 IGBT and IGBT manufacturing method 有权
公开(公告)号：US09608071B2
公开(公告)日：2017-03-28
申请号：US14378366
申请日：2012-02-14
申请人： Takehiro Kato , Toru Onishi
发明人： Takehiro Kato , Toru Onishi
IPC分类号： H01L29/10 , H01L29/66 , H01L29/739 , H01L29/08
CPC分类号： H01L29/1095 , H01L29/0834 , H01L29/6634 , H01L29/66348 , H01L29/7396 , H01L29/7397
摘要： An IGBT manufacturing method is provided. The IGBT has an n-type emitter region, a p-type top body region, an n-type intermediate region, a p-type bottom body region, an n-type drift region, a p-type collector region, trenches penetrating the emitter region, the top body region, the intermediate region and the bottom body region from an upper surface of a semiconductor substrate and reaching the drift region, and gate electrodes formed in the trenches. The method includes forming the trenches on the upper surface of the semiconductor substrate, forming the insulating film in the trenches, forming an electrode layer on the semiconductor substrate and in the trenches after forming the insulating film, planarizing an upper surface of the electrode layer, and implanting n-type impurities to a depth of the intermediate region from the upper surface side of the semiconductor substrate after planarizing the upper surface of the electrode layer.

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