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1. 发明申请

US20120056615A1 Method and Apparatus for Defined Magnetizing of Permanently Magnetizable Elements and Magnetoresistive Sensor Structures 有权
标题翻译：用于永久磁化元素和磁阻传感器结构的定义磁化的方法和装置
公开(公告)号：US20120056615A1
公开(公告)日：2012-03-08
申请号：US13292752
申请日：2011-11-09
申请人： Udo Ausserlechner , Thomas Bever , Dirk Hammerschmidt , Joachim Weitzel
发明人： Udo Ausserlechner , Thomas Bever , Dirk Hammerschmidt , Joachim Weitzel
IPC分类号： G01R35/00 , G01R33/02
CPC分类号： G01R33/1207 , G01R33/1215
摘要： An apparatus includes a sensor arrangement with a sensor chip. A magnetic field generator is configured to generate a secondary magnetic field opposing an external primary magnetic field at the sensor chip. The magnetic field generator protects the sensor arrangement against the external primary magnetic field.
摘要翻译：一种装置包括具有传感器芯片的传感器装置。磁场发生器被配置为产生与传感器芯片处的外部初级磁场相对的次级磁场。磁场发生器保护传感器装置免受外部主磁场的影响。

2. 发明授权

US08791693B2 Method and apparatus for defined magnetizing of permanently magnetizable elements and magnetoresistive sensor structures 有权
标题翻译：用于定义永久磁化元件和磁阻传感器结构的磁化的方法和装置
公开(公告)号：US08791693B2
公开(公告)日：2014-07-29
申请号：US13292752
申请日：2011-11-09
申请人： Udo Ausserlechner , Thomas Bever , Dirk Hammerschmidt , Joachim Weitzel
发明人： Udo Ausserlechner , Thomas Bever , Dirk Hammerschmidt , Joachim Weitzel
IPC分类号： G01N27/72 , G01R33/09
CPC分类号： G01R33/1207 , G01R33/1215
摘要： An apparatus includes a sensor arrangement with a sensor chip. A magnetic field generator is configured to generate a secondary magnetic field opposing an external primary magnetic field at the sensor chip. The magnetic field generator protects the sensor arrangement against the external primary magnetic field.
摘要翻译：一种装置包括具有传感器芯片的传感器装置。磁场发生器被配置为产生与传感器芯片处的外部初级磁场相对的次级磁场。磁场发生器保护传感器装置免受外部主磁场的影响。

3. 发明授权

US08193897B2 Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors 有权
标题翻译：用于xMR磁阻传感器的电流分布结构的有益修改的集成横向短路
公开(公告)号：US08193897B2
公开(公告)日：2012-06-05
申请号：US13004769
申请日：2011-01-11
申请人： Juergen Zimmer , Thomas Bever
发明人： Juergen Zimmer , Thomas Bever
IPC分类号： H01C10/00
CPC分类号： G01R33/09 , B82Y25/00 , G01R33/093 , G01R33/096 , H01L43/08 , H01L43/12 , Y10T29/49082 , Y10T29/49124 , Y10T29/49165 , Y10T428/31663
摘要： The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device.
摘要翻译：本发明涉及一种用于感测外部施加的磁场的磁阻器件及其相关方法。磁阻器件包括形成在下面的金属层上的磁阻条，其被图案化以在诸如硅衬底的衬底上产生电隔离的导电区域。绝缘层将图案化金属层与磁阻条纹分开。形成多个导电通孔以将金属层的隔离区域耦合到磁阻条纹。导电通孔在磁阻条和金属层的隔离区之间形成局部短路，以改变其中的电流的均匀性，从而改善磁阻器件的位置和角度感测精度。在有利的实施例中，金属层形成为相对于磁阻器件的轴线以大约45°角定向的导电条纹。

4. 发明授权

US08063632B2 Method and apparatus for defined magnetizing of permanently magnetizable elements and magnetoresistive sensor structures 有权
标题翻译：用于定义永久磁化元件和磁阻传感器结构的磁化的方法和装置
公开(公告)号：US08063632B2
公开(公告)日：2011-11-22
申请号：US12163552
申请日：2008-06-27
申请人： Udo Ausserlechner , Thomas Bever , Dirk Hammerschmidt , Joachim Weitzel
发明人： Udo Ausserlechner , Thomas Bever , Dirk Hammerschmidt , Joachim Weitzel
IPC分类号： G01R33/09
CPC分类号： G01R33/1207 , G01R33/1215
摘要： A method of magnetizing a permanently magnetizable element associated with a magnetic field sensor structure includes generating a test magnetic field penetrating the magnetic field sensor structure and the permanently magnetizable element, detecting the magnetic field and providing a test signal based on a magnetic field through the magnetic field sensor structure, aligning the test magnetic field and the magnetic field sensor structure with the permanently magnetizable element to each other, until the test signal reaches a set value corresponding to a predetermined magnetized field distribution with respect to the magnetic field sensor structure, and generating a magnetizing field for permanently magnetizing the element to be permanently magnetized, wherein the magnetizing field corresponds to the predetermined magnetic field distribution within a tolerance range.
摘要翻译：磁化与磁场传感器结构相关联的永久可磁化元件的方法包括产生穿过磁场传感器结构和永久可磁化元件的测试磁场，检测磁场并且通过磁场提供基于磁场的测试信号场传感器结构，将测试磁场和磁场传感器结构与永久可磁化元件相互对准，直到测试信号达到相对于磁场传感器结构的预定磁场分布对应的设定值，并产生用于永久磁化待永久磁化的元件的磁化场，其中磁化场对应于在公差范围内的预定磁场分布。

5. 发明申请

US20110163746A1 Integrated Lateral Short Circuit for a Beneficial Modification of Current Distribution Structure for xMR Magnetoresistive Sensors 有权
标题翻译：用于xMR磁阻传感器电流分布结构的有益修改的集成侧向短路
公开(公告)号：US20110163746A1
公开(公告)日：2011-07-07
申请号：US13004769
申请日：2011-01-11
申请人： Juergen Zimmer , Thomas Bever
发明人： Juergen Zimmer , Thomas Bever
IPC分类号： G01R33/02 , H01C10/00 , H01K3/10
CPC分类号： G01R33/09 , B82Y25/00 , G01R33/093 , G01R33/096 , H01L43/08 , H01L43/12 , Y10T29/49082 , Y10T29/49124 , Y10T29/49165 , Y10T428/31663
摘要： The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device.
摘要翻译：本发明涉及一种用于感测外部施加的磁场的磁阻器件及其相关方法。磁阻器件包括形成在下面的金属层上的磁阻条，其被图案化以在诸如硅衬底的衬底上产生电隔离的导电区域。绝缘层将图案化金属层与磁阻条纹分开。形成多个导电通孔以将金属层的隔离区域耦合到磁阻条纹。导电通孔在磁阻条和金属层的隔离区之间形成局部短路，以改变其中的电流的均匀性，从而改善磁阻器件的位置和角度感测精度。在有利的实施例中，金属层形成为相对于磁阻器件的轴线以大约45°角定向的导电条纹。

6. 发明申请

US20130065075A1 MAGNETORESISTIVE SPIN VALVE LAYER SYSTEMS 审中-公开
标题翻译：磁力旋转阀门系统
公开(公告)号：US20130065075A1
公开(公告)日：2013-03-14
申请号：US13230123
申请日：2011-09-12
申请人： Klemens Pruegl , Juergen Zimmer , Andreas Strasser , Wolfgang Raberg , Thomas Bever
发明人： Klemens Pruegl , Juergen Zimmer , Andreas Strasser , Wolfgang Raberg , Thomas Bever
IPC分类号： G01R33/09 , B05D1/36 , B32B15/04
CPC分类号： H01L43/08 , G01R33/098 , H01L43/12 , Y10T428/12465 , Y10T428/265 , Y10T428/31678
摘要： Embodiments relate to magnetoresistive (MR) sensors, sensor elements and structures, and methods. In particular, embodiments relate to MR, such as giant MR (GMR) or tunneling MR (TMR), spin valve layer systems and related sensors having improved stability. Embodiments include at least one of a multi-layer pinned layer or a multi-layer reference layer, making the stack more stable and therefore suitable for use at higher temperatures and magnetic fields than conventional systems and sensors.
摘要翻译：实施例涉及磁阻（MR）传感器，传感器元件和结构以及方法。特别地，实施例涉及MR，例如巨磁（GMR）或隧道MR（TMR），自旋阀层系统和具有改进的稳定性的相关传感器。实施例包括多层被钉扎层或多层参考层中的至少一个，使得堆叠更加稳定，因此适合于在比常规系统和传感器更高的温度和磁场下使用。

7. 发明授权

US08373536B2 Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors 有权
标题翻译：用于xMR磁阻传感器的电流分布结构的有益修改的集成横向短路
公开(公告)号：US08373536B2
公开(公告)日：2013-02-12
申请号：US13481183
申请日：2012-05-25
申请人： Juergen Zimmer , Thomas Bever
发明人： Juergen Zimmer , Thomas Bever
IPC分类号： H01C10/00
CPC分类号： G01R33/09 , B82Y25/00 , G01R33/093 , G01R33/096 , H01L43/08 , H01L43/12 , Y10T29/49082 , Y10T29/49124 , Y10T29/49165 , Y10T428/31663
摘要： The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device.
摘要翻译：本发明涉及一种用于感测外部施加的磁场的磁阻器件及其相关方法。磁阻器件包括形成在下面的金属层上的磁阻条，其被图案化以在诸如硅衬底的衬底上产生电隔离的导电区域。绝缘层将图案化金属层与磁阻条纹分开。形成多个导电通孔以将金属层的隔离区域耦合到磁阻条纹。导电通孔在磁阻条和金属层的隔离区之间形成局部短路，以改变其中的电流的均匀性，从而改善磁阻器件的位置和角度感测精度。在有利的实施例中，金属层形成为相对于磁阻器件的轴线以大约45°角定向的导电条纹。

8. 发明申请

US20120229133A1 Integrated Lateral Short Circuit for a Beneficial Modification of Current Distribution Structure for xMR Magnetoresistive Sensors 有权
标题翻译：用于xMR磁阻传感器电流分布结构的有益修改的集成侧向短路
公开(公告)号：US20120229133A1
公开(公告)日：2012-09-13
申请号：US13481183
申请日：2012-05-25
申请人： Juergen Zimmer , Thomas Bever
发明人： Juergen Zimmer , Thomas Bever
IPC分类号： G01R33/02 , H05K3/00
CPC分类号： G01R33/09 , B82Y25/00 , G01R33/093 , G01R33/096 , H01L43/08 , H01L43/12 , Y10T29/49082 , Y10T29/49124 , Y10T29/49165 , Y10T428/31663
摘要： The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device.
摘要翻译：本发明涉及一种用于感测外部施加的磁场的磁阻器件及其相关方法。磁阻器件包括形成在下面的金属层上的磁阻条，其被图案化以在诸如硅衬底的衬底上产生电隔离的导电区域。绝缘层将图案化金属层与磁阻条纹分开。形成多个导电通孔以将金属层的隔离区域耦合到磁阻条纹。导电通孔在磁阻条和金属层的隔离区之间形成局部短路，以改变其中的电流的均匀性，从而改善磁阻器件的位置和角度感测精度。在有利的实施例中，金属层形成为相对于磁阻器件的轴线以大约45°角定向的导电条纹。

9. 发明授权

US07872564B2 Integrated lateral short circuit for a beneficial modification of current distribution structure for xMR magnetoresistive sensors 有权
标题翻译：用于xMR磁阻传感器的电流分布结构的有益修改的集成横向短路
公开(公告)号：US07872564B2
公开(公告)日：2011-01-18
申请号：US11941853
申请日：2007-11-16
申请人： Juergen Zimmer , Thomas Bever
发明人： Juergen Zimmer , Thomas Bever
IPC分类号： H01C10/32
CPC分类号： G01R33/09 , B82Y25/00 , G01R33/093 , G01R33/096 , H01L43/08 , H01L43/12 , Y10T29/49082 , Y10T29/49124 , Y10T29/49165 , Y10T428/31663
摘要： The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device.
摘要翻译：本发明涉及一种用于感测外部施加的磁场的磁阻器件及其相关方法。磁阻器件包括形成在下面的金属层上的磁阻条，其被图案化以在诸如硅衬底的衬底上产生电隔离的导电区域。绝缘层将图案化金属层与磁阻条纹分开。形成多个导电通孔以将金属层的隔离区域耦合到磁阻条纹。导电通孔在磁阻条和金属层的隔离区之间形成局部短路，以改变其中的电流的均匀性，从而改善磁阻器件的位置和角度感测精度。在有利的实施例中，金属层形成为相对于磁阻器件的轴线以大约45°角定向的导电条纹。

10. 发明授权

US06389902B2 Micromechanical sensor and method for its production 有权
标题翻译：微机械传感器及其生产方法
公开(公告)号：US06389902B2
公开(公告)日：2002-05-21
申请号：US09781798
申请日：2001-02-12
申请人： Robert Aigner , Hans-Jörg Timme , Thomas Bever
发明人： Robert Aigner , Hans-Jörg Timme , Thomas Bever
IPC分类号： G01L900
CPC分类号： B81C1/00801 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2207/015 , B81C2201/0136 , H04R19/005 , H04R19/04 , H04R31/00
摘要： The invention relates to a micromechanical sensor and to a corresponding production method that includes the following steps: a) preparing a doped semiconductor wafer; b) applying an epitaxial layer that is doped in such a way that a jump in the charge carrier density in the interface between the semiconductor wafer and the epitaxial layer occurs; c) optionally etching ventilation holes traversing the epitaxial layer and optionally filling the ventilation holes with a sacrificial material; d) depositing at least one sacrificial layer, at least one spacing layer, a membrane and optionally a semiconductor circuit on the top side of the epitaxial layer using a technology known per se, wherein the semiconductor circuit may be applied after the membrane is formed or while depositing the layers required to form the membrane; e) etching a hole on the back part of the sensor, wherein the etching method is selected in such a way that etching advances in the direction of the top side and ceases in the interference between the wafer and the epitaxial layer by changing charge carrier concentration. The invention also relates to the utilization of the micromechanical sensor in pressure sensors or microphones.
摘要翻译：本发明涉及一种微机械传感器及相应的生产方法，包括以下步骤：a）制备掺杂半导体晶片; b）施加掺杂的外延层，使得发生半导体晶片和外延层之间的界面中的电荷载流子密度的跳跃; c）可选地蚀刻穿过外延层的通气孔并且可选地用牺牲材料填充通风孔; d）使用本身已知的技术在外延层的顶侧上沉积至少一个牺牲层，至少一个间隔层，膜和任选的半导体电路，其中半导体电路可以在膜被形成之后施加同时沉积形成膜所需的层; e）蚀刻传感器后部的孔，其中蚀刻方法被选择为使得蚀刻沿着顶侧的方向前进并且通过改变电荷载流子浓度而在晶片和外延层之间的干涉中停止。本发明还涉及在压力传感器或麦克风中利用微机械传感器。

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