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1. 发明授权

US09748526B2 Vapor deposition device, vapor deposition method, and method for producing organic el display device 有权
公开(公告)号：US09748526B2
公开(公告)日：2017-08-29
申请号：US14004896
申请日：2012-03-09
申请人： Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
发明人： Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
IPC分类号： C23C14/24 , H01L51/56 , C23C14/04 , C23C14/12 , H05B33/10
CPC分类号： H01L51/56 , C23C14/042 , C23C14/12 , C23C14/243 , H05B33/10
摘要： A vapor deposition device (1) performs a vapor deposition treatment to form a luminescent layer (47) having a predetermined pattern on a film formation substrate (40). The vapor deposition device includes: a nozzle (13) having a plurality of injection holes (16) from which vapor deposition particles (17), which constitute the luminescent layer, are injected toward the film formation substrate when the vapor deposition treatment is carried out; and a plurality of control plates (20) provided between the nozzle and the film formation substrate and restricting an incident angle, with respect to the film formation substrate, of the vapor deposition particles injected from the plurality of injection holes. The nozzle includes: a nozzle main body (14b) in a container shape having an opening (14c) on a surface thereof on a film formation substrate side and (ii) a plurality of blocks (15) covering the opening and separated from each other, each of the plurality of blocks having the plurality of injection holes. The above arrangement allows a vapor-deposited film pattern to be formed with high definition.

2. 发明授权

US09299946B2 Display substrate, organic electroluminescent display device, and manufacturing method for display substrate and organic electroluminescent display device 有权
标题翻译：显示基板，有机电致发光显示装置以及显示基板和有机电致发光显示装置的制造方法
公开(公告)号：US09299946B2
公开(公告)日：2016-03-29
申请号：US14008535
申请日：2012-03-27
申请人： Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
发明人： Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
IPC分类号： H01L33/14 , H01L51/50 , H05B33/14 , H01L51/56 , H01L27/32 , H01L51/52
CPC分类号： H01L51/504 , H01L27/3213 , H01L27/3218 , H01L27/3244 , H01L51/5265 , H01L51/56 , H05B33/145
摘要： TFT substrate (10) includes a plurality of pixel regions each including light emitting regions of at least three colors, which light emitting regions include light emitting layers (23R(1), 23G, 23R(2), and 23B), respectively, and two adjacent ones of the light emitting regions are a combination other than a combination of (i) a light emitting region included in a light emitting layer (23G) of a color having a highest current efficiency in a case where the light emitting layers of the light emitting regions of the at least three colors emit light having an identical luminance and (ii) a light emitting region included in a light emitting layer (23B) of a color having a lowest current efficiency in a case where the light emitting layers of the light emitting regions of the at least three colors emit light having an identical luminance.
摘要翻译： TFT基板（10）包括分别包括至少三种颜色的发光区域的多个像素区域，该发光区域分别包括发光层（23R（1），23G，23R（2）和23B），以及两个相邻的发光区域是除了（i）包含在发光层（23G）中的发光区域的组合之外的组合，在发光层的发光层的情况下具有最高电流效率的颜色所述至少三种颜色的发光区域发射具有相同亮度的光，以及（ii）包含在具有最低电流效率的颜色的发光层（23B）中的发光区域，在发光层的发光层至少三种颜色的发光区域发射具有相同亮度的光。

3. 发明授权

US09240572B2 Vapor deposition device, vapor deposition method, and organic EL display device 有权
标题翻译：气相沉积装置，气相沉积法和有机EL显示装置
公开(公告)号：US09240572B2
公开(公告)日：2016-01-19
申请号：US13984799
申请日：2012-03-02
申请人： Shinichi Kawato , Satoshi Inoue , Tohru Sonoda , Satoshi Hashimoto
发明人： Shinichi Kawato , Satoshi Inoue , Tohru Sonoda , Satoshi Hashimoto
IPC分类号： H01L51/56 , C23C14/04 , C23C14/12 , C23C14/56 , C23C16/455 , H01L51/00
CPC分类号： H01L51/56 , C23C14/044 , C23C14/12 , C23C14/562 , C23C16/45578 , H01L51/0011
摘要： A vapor deposition device includes a vapor deposition source (60) having a plurality of vapor deposition source openings (61) that discharge vapor deposition particles (91), a limiting unit (80) having a plurality of limiting openings (82), and a vapor deposition mask (70) in which a plurality of mask openings (71) are formed only in a plurality of vapor deposition regions (72) where the vapor deposition particles that have passed through a plurality of limiting openings reach. The plurality of vapor deposition regions are arranged along a second direction that is orthogonal to the normal line direction of the substrate (10) and the movement direction of the substrate, with non-vapor deposition regions (73) where the vapor deposition particles do not reach being sandwiched therebetween. Mask openings through which the vapor deposition particles pass are formed at different positions in the movement direction of the substrate from the positions of the non-vapor deposition regions located on a straight line parallel to the second direction, as viewed along the normal line direction of the substrate. Accordingly, it is possible to stably form a vapor deposition coating film in which edge blurring is suppressed at a desired position on a substrate.
摘要翻译：蒸镀装置包括：蒸镀源（60），具有排出气相沉积粒子（91）的多个气相沉积源开口（61），具有多个限制开口（82）的限制单元（80）气相沉积掩模（70），其中多个掩模开口（71）仅形成在已经通过多个限制孔的气相沉积颗粒到达的多个气相沉积区（72）中。多个气相沉积区域沿着与基板（10）的法线方向正交的第二方向和基板的移动方向排列，其中气相沉积微粒不具有非气相沉积区域（73）夹在其间。沿着平行于第二方向的直线上的非蒸镀区域的位置，沿着基板的移动方向的不同位置，沿蒸镀粒子的法线方向底物。因此，可以稳定地形成在基板上的期望位置抑制边缘模糊的气相沉积涂膜。

4. 发明授权

US09093648B2 Organic EL element, method for manufacturing the same, and organic EL display device 有权
标题翻译：有机EL元件及其制造方法以及有机EL显示装置
公开(公告)号：US09093648B2
公开(公告)日：2015-07-28
申请号：US13380608
申请日：2010-06-03
申请人： Hideki Uchida , Tokiyoshi Umeda , Tohru Sonoda
发明人： Hideki Uchida , Tokiyoshi Umeda , Tohru Sonoda
IPC分类号： H01L29/18 , H01L51/00 , C23C14/04 , H01L27/32
CPC分类号： H01L51/0013 , C23C14/048 , H01L27/3211 , H01L27/3246 , H01L2251/558
摘要： An anode 2 is formed on an element substrate 1. By using a film-forming solution containing a stacking material that forms an organic layer 43, a film is formed on a donor substrate 10 to pattern a transfer layer 11, thereby fabricating a transfer substrate 12. The transfer substrate 12 and the element substrate 1 are placed so as to face each other with spacers 13 interposed therebetween, such that the surface of the transfer substrate 12, which has the transfer layer 11 formed thereon, faces the element substrate 1 having the anode 2 formed thereon. The transfer substrate 12 and the element substrate 1 facing each other are held under vacuum conditions. The transfer substrate 12 is heated by a heat source 15 under the vacuum conditions to transfer the transfer layer 11 to the element substrate 1.
摘要翻译：阳极2形成在元件基板1上。通过使用含有形成有机层43的层叠材料的成膜溶液，在供体基板10上形成膜以对转印层11进行图案化，从而制造转印基板转印基板12和元件基板1以相互间隔开的间隔物13相对配置，使得其上形成有转印层11的转印基板12的表面面向元件基板1，元件基板1具有形成在其上的阳极2。转印基板12和彼此面对的元件基板1保持在真空条件下。转印基板12在真空条件下由热源15加热，以将转印层11转印到元件基板1上。

5. 发明授权

US09076989B2 Method for forming deposition film, and method for producing display device 有权
标题翻译：沉积膜形成方法及显示装置的制造方法
公开(公告)号：US09076989B2
公开(公告)日：2015-07-07
申请号：US13976422
申请日：2011-12-20
申请人： Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
发明人： Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
IPC分类号： H01L51/56 , H05B33/04 , H05B33/10 , H01L21/02 , H01L51/00 , C23C14/04 , C23C16/04 , H01L27/32
CPC分类号： H01L51/56 , C23C14/042 , C23C16/042 , H01L21/02104 , H01L27/3211 , H01L51/0011 , H01L2227/323 , H01L2251/566 , H05B33/04 , H05B33/10
摘要： A masking film (13) is formed so as to have an opening in a display region (R1) (luminescent region) and a sealing region. Subsequently, luminescent layers (8R, 8G, and 8B) having a stripe pattern are formed. Then, the masking film (13) is peeled off, so that the luminescent layers (8R, 8G, and 8B) patterned with high resolution are provided.
摘要翻译：掩模膜（13）形成为在显示区域（R1）（发光区域）和密封区域中具有开口。随后，形成具有条纹图案的发光层（8R，8G，8B）。然后，剥离掩模膜（13），从而提供以高分辨率图案化的发光层（8R，8G，8B）。

6. 发明授权

US09055653B2 Deposition apparatus and deposition method 有权
标题翻译：沉积设备和沉积方法
公开(公告)号：US09055653B2
公开(公告)日：2015-06-09
申请号：US13637627
申请日：2011-02-10
申请人： Tohru Sonoda , Nobuhiro Hayashi , Shinichi Kawato , Satoshi Inoue
发明人： Tohru Sonoda , Nobuhiro Hayashi , Shinichi Kawato , Satoshi Inoue
IPC分类号： C23C14/24 , C23C14/04 , H05B33/10 , C23C14/12 , C23C14/22 , H01L27/32 , H01L51/56 , H01L51/00
CPC分类号： H05B33/10 , C23C14/042 , C23C14/044 , C23C14/12 , C23C14/225 , C23C14/24 , H01L27/3211 , H01L51/0011 , H01L51/56
摘要： A deposition apparatus 50 forms a thin film 3 in a predetermined pattern on a substrate 10 for an organic EL display. A first correction plate 81 and a second correction plate 82 are placed between a shadow mask 60 and a deposition source 53 that emits deposition particles. Each of the correction plates 81, 82 has a plurality of blade plates 83 and a frame 84 that supports the plurality of blade plates 83. The blade plates 83 are placed so as to be tilted with respect to the shadow mask 60, and to extend parallel to each other with an opening 86 between adjoining ones of the blade plates 83 as viewed in a direction perpendicular the deposition mask 60.
摘要翻译：沉积装置50在用于有机EL显示器的基板10上以预定图案形成薄膜3。第一校正板81和第二校正板82被放置在荫罩60和发射沉积颗粒的沉积源53之间。每个校正板81,82具有多个叶片83和支撑多个叶片板83的框架84.叶片板83相对于荫罩60倾斜放置，并且延伸在与沉积掩模60垂直的方向上观察时，在相邻的刮板83之间具有开口86，彼此平行。

7. 发明授权

US08951816B2 Film forming method 有权
标题翻译：成膜方法
公开(公告)号：US08951816B2
公开(公告)日：2015-02-10
申请号：US13635201
申请日：2011-02-28
申请人： Rena Tsuruoka , Hisao Ikeda , Takuya Tsurume , Tohru Sonoda , Satoshi Inoue
发明人： Rena Tsuruoka , Hisao Ikeda , Takuya Tsurume , Tohru Sonoda , Satoshi Inoue
IPC分类号： H01L21/00 , H01L51/00 , C23C14/04 , H01L51/56
CPC分类号： H01L51/0013 , C23C14/04 , C23C14/048 , H01L51/56
摘要： One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrate 10 including an absorption layer 12 on a first substrate 11 and a material layer 13 containing a film formation material and a surface of a film-formation target substrate 20 including a first layer 23 over a second substrate 22, so as to face each other; forming a second layer 13a containing the film formation material over the first layer 23 by performing first heat treatment on the material layer 13; and forming a third layer 13b containing the film formation material over the second layer 13a by performing second heat treatment on the material layer 13. In the second heat treatment, energy with a density higher than that in the first heat treatment is applied to the material layer.
摘要翻译：本发明的一个实施方案是一种成膜方法，其包括：将包含吸收层12的成膜基板10的表面布置在第一基板11和包含成膜材料的材料层13和膜形成表面目标基板20包括第二基板22上的第一层23，以便彼此面对; 通过对材料层13进行第一次热处理，在第一层23上形成含有成膜材料的第二层13a; 并在第二层13a上形成含有成膜材料的第三层13b，在材料层13上进行第二热处理。在第二热处理中，将密度高于第一热处理的能量施加到材料层。

8. 发明授权

US08900675B2 Deposition method and method for manufacturing deposition substrate 有权
标题翻译：用于制造沉积基板的沉积方法和方法
公开(公告)号：US08900675B2
公开(公告)日：2014-12-02
申请号：US13635227
申请日：2011-02-28
申请人： Takahiro Ibe , Tomoya Aoyama , Rena Tsuruoka , Satoshi Inoue , Tohru Sonoda
发明人： Takahiro Ibe , Tomoya Aoyama , Rena Tsuruoka , Satoshi Inoue , Tohru Sonoda
IPC分类号： B05D3/06 , H01L51/56 , C23C14/12 , C23C14/28 , H05B33/10 , H01L51/00 , C23C14/56 , H01L51/50
CPC分类号： H05B33/10 , C23C14/048 , C23C14/12 , C23C14/28 , C23C14/564 , H01L51/0027 , H01L51/5012 , H01L51/56
摘要： One embodiment of the present invention is a deposition method for forming a layer 13a containing a deposition material on a deposition target surface of a second substrate, comprising the steps of forming an absorbing layer 12 over one surface of a first substrate 11; forming a material layer 13 containing the deposition material over the absorbing layer; performing first heat treatment on the material layer from the other surface of the first substrate to a temperature lower than the sublimation temperature of the deposition material so as to remove an impurity 14 in the material layer 13; disposing the one surface of the first substrate and the deposition target surface of the second substrate to face each other; and performing second heat treatment on the material layer from the other surface of the first substrate.
摘要翻译：本发明的一个实施方案是用于在第二基底的沉积靶表面上形成含有沉积材料的层13a的沉积方法，包括以下步骤：在第一基底11的一个表面上形成吸收层12; 在吸收层上形成含有沉积材料的材料层13; 在所述材料层上从所述第一基板的另一表面进行第一热处理至低于所述沉积材料的升华温度的温度，以除去所述材料层13中的杂质14; 将第一基板的一个表面和第二基板的沉积目标表面布置成彼此面对; 以及从所述第一基板的另一表面对所述材料层进行第二热处理。

9. 发明授权

US08691016B2 Deposition apparatus, and deposition method 有权
标题翻译：沉积设备和沉积方法
公开(公告)号：US08691016B2
公开(公告)日：2014-04-08
申请号：US13522007
申请日：2010-10-29
申请人： Tohru Sonoda , Nobuhiro Hayashi , Shinichi Kawato
发明人： Tohru Sonoda , Nobuhiro Hayashi , Shinichi Kawato
IPC分类号： B05C11/11 , C23C16/00 , H01L21/00 , H01L21/31 , H01L21/469
CPC分类号： H01L51/001 , C23C14/042 , C23C14/12 , H01L27/3211 , H01L51/0011 , H01L51/56
摘要： A deposition mask 601 is used to form a thin film 3 in a prescribed pattern on a substrate 10 by deposition. Each of a plurality of improved openings 62A of the deposition mask 601 has a protruding opening portion 64, and is formed so that the opening amount at an end in a lateral direction is larger than that in a central portion in the lateral direction. In a deposition apparatus 50, the deposition mask 601 is held in a fixed relative positional relation with a deposition source 53 by a mask unit 55. In the case of forming the thin film 3 in a stripe pattern on the substrate 10 by the deposition apparatus 50, deposition particles are sequentially deposited on the substrate 10 while relatively moving the substrate 10 along a scanning direction with a gap H being provided between the substrate 10 and the deposition mask 601.
摘要翻译：沉积掩模601用于通过沉积在衬底10上以规定的图案形成薄膜3。沉积掩模601的多个改进开口62A中的每一个具有突出的开口部分64，并且形成为使得横向端部的开口量大于在横向方向上的中心部分的开口量。在沉积装置50中，沉积掩模601通过掩模单元55与沉积源53保持固定的相对位置关系。在通过沉积装置在基板10上形成条纹图案的薄膜3的情况下如图50所示，在衬底10和衬底10之间设置有间隙H的同时使衬底10沿着扫描方向相对移动的同时，沉积粒子依次沉积在衬底10上。

10. 发明授权

US08673077B2 Vapor deposition device, vapor deposition method, and organic EL display device 有权
标题翻译：气相沉积装置，气相沉积法和有机EL显示装置
公开(公告)号：US08673077B2
公开(公告)日：2014-03-18
申请号：US13984283
申请日：2012-03-02
申请人： Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
发明人： Tohru Sonoda , Shinichi Kawato , Satoshi Inoue , Satoshi Hashimoto
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： H01L51/5012 , C23C14/042 , C23C14/243 , C23C14/564 , H01L51/0011 , H01L51/56 , H05B33/10
摘要： Vapor deposition particles (91) discharged from at least one vapor deposition source opening (61) pass through a plurality of limiting openings (82) of a limiting unit (80) and a plurality of mask openings (71) of a vapor deposition mask (70), and adhere to a substrate (10) that relatively moves along a second direction (10a) so as to form a coating film. The limiting unit includes a plurality of plate members stacked on one another. Accordingly, it is possible to efficiently form a vapor deposition coating film in which edge blurring is suppressed on a large-sized substrate at a low cost.
摘要翻译：从至少一个气相沉积源开口（61）排出的气相沉积颗粒（91）通过限制单元（80）的多个限制开口（82）和气相沉积掩模的多个掩模开口（71） 70），并且粘附到沿着第二方向（10a）相对移动以形成涂膜的基板（10）。限制单元包括彼此堆叠的多个板构件。因此，可以以低成本有效地形成在大尺寸基板上抑制边缘模糊的气相沉积涂膜。

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