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    • 2. 发明授权
    • Luminous flux control member and light-emitting apparatus including the same
    • 光通量控制部件和包括该光通量控制部件的发光装置
    • US08905593B2
    • 2014-12-09
    • US13601735
    • 2012-08-31
    • Tomohiro Saito
    • Tomohiro Saito
    • F21V13/04G02B19/00F21V5/02F21V7/00F21Y101/02F21V3/04
    • F21V5/02F21V3/04F21V7/0091F21Y2115/10G02B19/0009G02B19/0028G02B19/0061
    • A luminous flux control member that controls travelling direction of light emitted from a light source includes an incident area, an emission area, and a plurality of projecting sections. The plurality of projecting sections are constituted by an inner area, an intermediate area, and a peripheral area defined in the radial direction, and a first specific projecting section disposed in the inner area is configured such that a planar section that is used to measure the height of the first specific projecting section and is perpendicular to the optical axis is connected to an inner peripheral end and an outer peripheral end of a base end portion of the first specific projecting section. The projecting sections other than the first specific projecting section, in principle, come into contact internally or externally with another projecting section other than the first specific projecting section.
    • 控制从光源射出的光的行进方向的光束控制部件具有入射面积,发光面积,以及多个突出部。 多个突出部分由沿径向限定的内部区域,中间区域和周边区域构成,并且设置在内部区域中的第一特定突出部分被构造成使得用于测量 第一特定突出部的高度,与光轴垂直的高度与第一特定突出部的基端部的内周端和外周端连接。 原理上,除了第一特定突出部分之外的突出部分在内部或外部与除第一特定突出部分之外的另一个突出部分接触。
    • 3. 发明授权
    • Manufacturing method of hermetic container
    • 密封容器的制造方法
    • US08475618B2
    • 2013-07-02
    • US13198867
    • 2011-08-05
    • Mamo MatsumotoTomohiro SaitoNobuhiro Ito
    • Mamo MatsumotoTomohiro SaitoNobuhiro Ito
    • B32B37/16
    • H01L51/5246H01J9/241H01L51/525
    • A manufacturing method of a hermetic container includes an assembling step of assembling the hermetic container and a sealing step of sealing by first and second sealing materials. Thus, in a case where local heating light is scanned toward an already-sealed portion of the second sealing material, since a separation portion of an unsealed state is located between the already-sealed portion and a downstream end of scanning, a load due to expansion/contraction of a frame body is applied to the first sealing material which is present in the separation portion of the unsealed state. After then, since the local heating light is irradiated to the first sealing material to which the load has been applied so as to heat and melt it, the load is relieved, whereby it is possible to suppress deterioration of joining strength and airtightness of the hermetic container.
    • 密封容器的制造方法包括组装密封容器的组装步骤和通过第一和第二密封材料密封的密封步骤。 因此,在向第二密封材料的已经密封的部分扫描局部加热光的情况下,由于未密封状态的分离部位于已经密封的部分和扫描的下游端之间,所以由于 将框体的伸缩进行施加到存在于未密封状态的分离部中的第一密封材料。 然后,由于局部加热光被照射到已经施加负载的第一密封材料上以加热和熔化,所以负载被释放,从而可以抑制密封件的接合强度和气密性的劣化 容器。
    • 8. 发明授权
    • Imaging lens
    • 成像镜头
    • US07995294B2
    • 2011-08-09
    • US12589441
    • 2009-10-21
    • Tomohiro Saito
    • Tomohiro Saito
    • G02B9/04
    • G02B13/003G02B9/10
    • It is to provide an imaging lens that can improve optical performance while reducing size and weight.An imaging lens includes, in order from an object side to an image surface side, a diaphragm, a first lens 3 that is a meniscus lens having a positive power whose convex surface faces the object side, and a second lens 4 that is a lens having a negative power whose concave surface faces the object side, wherein conditions expressed by the following expressions are to be satisfied: 0.25
    • 它是提供一种能够在减小尺寸和重量的同时提高光学性能的成像透镜。 成像透镜从物体侧到像面侧的顺序包括隔膜,作为凸面朝向物体侧的正功率的弯月形透镜的第一透镜3和作为透镜的第二透镜4 具有凹面朝向物体侧的负功率,其中满足以下表达式的条件:0.25
    • 9. 发明授权
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US07915130B2
    • 2011-03-29
    • US12588336
    • 2009-10-13
    • Tomohiro SaitoAkio KanekoAtsushi Yagishita
    • Tomohiro SaitoAkio KanekoAtsushi Yagishita
    • H01L21/336
    • H01L29/66795H01L29/4908H01L29/785
    • This disclosure concerns a manufacturing method of a semiconductor device includes forming a Fin-type body on an insulation layer, the Fin-type body being made of a semiconductor material and having an upper surface covered with a protective film; forming a gate insulation film on side surfaces of the Fin-type body; depositing a gate electrode material so as to cover the Fin-type body; planarizing the gate electrode material; forming a gate electrode by processing the gate electrode material; depositing an interlayer insulation film so as to cover the gate electrode; exposing the upper surface of the gate electrode; depositing a metal layer on the upper surface of the gate electrode; siliciding the gate electrode by reacting the gate electrode with the metal layer; forming a trench on the upper surface of the protective film by removing an unreacted metal in the metal layer; and filling the trench with a conductor.
    • 本公开涉及半导体器件的制造方法,包括在绝缘层上形成鳍状体,所述鳍状体由半导体材料制成,并且具有被保护膜覆盖的上表面; 在鳍型体的侧表面上形成栅极绝缘膜; 沉积栅电极材料以覆盖鳍型体; 平面化栅电极材料; 通过处理栅电极材料形成栅电极; 沉积层间绝缘膜以覆盖栅电极; 露出栅电极的上表面; 在栅电极的上表面上沉积金属层; 通过使栅电极与金属层反应来硅化栅电极; 通过去除金属层中的未反应金属在保护膜的上表面上形成沟槽; 并用导体填充沟槽。