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1. 发明授权

US11837425B2 MEMS element and electrical circuit 有权
公开(公告)号：US11837425B2
公开(公告)日：2023-12-05
申请号：US17446033
申请日：2021-08-26
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Hiroaki Yamazaki , Ping Wang
IPC分类号： H01H59/00 , B81B3/00
CPC分类号： H01H59/0009 , B81B3/0086 , B81B2201/018 , B81B2203/04 , H01H2059/0027
摘要： According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, and a first movable electrode facing the first fixed electrode, a first conductive member electrically connected with the first movable electrode, and a second conductive member electrically connected with the first movable electrode. The first movable electrode is supported by the first and second conductive members to be separated from the first fixed electrode in a first state before a first electrical signal is applied between the second conductive member and the first fixed electrode. The first conductive member is separated from the first movable electrode in a second state after the first electrical signal is applied. The first movable electrode is supported by the second conductive member to be separated from the first fixed electrode in the second state.

2. 发明授权

US11810732B2 Waterproof MEMS button device, package housing the button device, and method of manufacturing the button device 有权
公开(公告)号：US11810732B2
公开(公告)日：2023-11-07
申请号：US17690869
申请日：2022-03-09
申请人： STMICROELECTRONICS S.r.l.
发明人： Enri Duqi , Gabriele Gattere , Carlo Valzasina
IPC分类号： H01H13/14 , B81B3/00 , G01L1/16 , H01H13/06 , H10N30/30
CPC分类号： H01H13/14 , B81B3/0021 , G01L1/162 , H01H13/06 , H10N30/302 , B81B2201/018
摘要： A button device includes a fixed support structure; a movable structure, laterally surrounded by the support structure and configured to deform at least in part under the action of an external force; and a fluid-tight protection cap. The movable structure includes a piston element, deformable elements having piezoelectric transducers arranged thereon, and anchor elements that couple the piston element to the deformable elements. When an external force acts on the piston element, the anchor elements transfer this force to the deformable elements and to the piezoelectric transducers, so as to sense the extent of this force.

3. 发明申请

US20170358729A1 CAPACITIVE RF MEMS INTENDED FOR HIGH-POWER APPLICATIONS 审中-公开
公开(公告)号：US20170358729A1
公开(公告)日：2017-12-14
申请号：US15538632
申请日：2015-12-23
申请人： THALES
发明人： Afshin ZIAEI , Matthieu LE BAILLIF , Paolo MARTINS , Shailendra BANSROPUN
IPC分类号： H01L41/08 , H01H59/00 , B81B3/00 , H01G5/18 , H01G5/16 , H01H57/00 , H01L41/09
CPC分类号： H01L41/08 , B81B3/0021 , B81B7/0019 , B81B2201/018 , H01G5/16 , H01G5/18 , H01H57/00 , H01H59/0009 , H01H2057/006 , H01L41/0933
摘要： According to one aspect of the invention, there is proposed a capacitive radiofrequency MicroElectroMechanical System or capacitive RF MEMS comprising a metallic membrane suspended above an RF transmission line and resting on ground planes, and exhibiting a lower face, an upper face opposite to the lower face and a first layer comprising a refractory metallic material at least partially covering the upper face of the membrane so as to prevent the heating of the membrane.

4. 发明申请

US20160204716A1 Actuator, Shutter Device, Fluid Control Device, Switch, and Two-Dimensional Scanning Sensor Device 审中-公开
标题翻译：执行器，快门装置，流体控制装置，开关和二维扫描传感器装置
公开(公告)号：US20160204716A1
公开(公告)日：2016-07-14
申请号：US14910622
申请日：2014-07-30
申请人： NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY , OMRON CORPORATION , KABUSHIKI KAISHA SAGINOMIYA SEISAKUSHO
发明人： Masato SUZUKI , Akito MORI , Gen HASHIGUCHI , Tatsuhiko SUGIYAMA , Hiroshi IMAMOTO , Masatoshi OBA , Hiroyuki MITSUYA , Hisayuki ASHIZAWA , Kazunori ISHIBASHI
IPC分类号： H02N1/00 , F16K31/02 , G02B26/02 , B81B3/00 , H01H59/00
CPC分类号： H02N1/008 , B81B3/0054 , B81B2201/018 , B81B2201/0292 , B81B2201/033 , B81B2201/036 , B81B2201/047 , B81B2203/0109 , B81B2203/0163 , B81B2203/051 , F16K31/02 , G02B26/02 , H01H59/00
摘要： An actuator includes: an electrostatic actuation mechanism including a stationary electrode and a movable electrode; a first movable part driven by the electrostatic actuation mechanism; a first elastic support part that elastically supports the first movable part; an electret formed in at least one of the stationary electrode and the movable electrode; and a drive control unit that controls application of voltage to the electrostatic actuation mechanism. In the actuator a plurality of stable states are set in which the first movable part is positioned at a stable position at which an electrostatic force generated by the electret matches with an elastic force exerted by the first elastic support part or at a stable position near such stable position. By applying a voltage to the electrostatic actuation mechanism, the first movable part may be displaced from any stable position to another stable position.
摘要翻译：致动器包括：静电致动机构，包括固定电极和可动电极; 由静电致动机构驱动的第一可动部; 第一弹性支撑部，其弹性地支撑所述第一可动部; 在所述固定电极和所述可动电极中的至少一个上形成的驻极体; 以及驱动控制单元，其控制对静电致动机构施加电压。在致动器中，设置多个稳定状态，其中第一可移动部件位于由驻极体产生的静电力与由第一弹性支撑部分施加的弹力相匹配的稳定位置处，或者靠近这样的稳定位置稳定的位置。通过向静电致动机构施加电压，第一可动部件可以从任何稳定位置移动到另一个稳定位置。

5. 发明申请

US20160116631A1 Method for Producing an Integrated Circuit Pointed Element, and Corresponding Integrated Circuit 审中-公开
标题翻译：用于制造集成电路指向元件的方法和相应的集成电路
公开(公告)号：US20160116631A1
公开(公告)日：2016-04-28
申请号：US14985037
申请日：2015-12-30
申请人： STMicroelectronics (Rousset) SAS
发明人： Abderrezak Marzaki , Yoann Goasduff , Virginie Bidal , Pascal Fornara
IPC分类号： G01V7/04 , B81C1/00 , H01H37/32 , H01L29/423 , B81B3/00 , H01H37/04 , H01L21/3213 , H01L49/02
CPC分类号： G01V7/04 , B81B3/001 , B81B2201/018 , B81B2201/0235 , B81B2201/0242 , B81B2203/0361 , B81B2203/04 , B81C1/00111 , H01H9/02 , H01H37/04 , H01H37/32 , H01H37/42 , H01H61/013 , H01L21/32139 , H01L28/82 , H01L28/88 , H01L29/4238
摘要： A method for producing an integrated circuit pointed element is disclosed. An element has a projection with a concave part directing its concavity towards the element. The element includes a first etchable material. A zone is formed around the concave part of the element. The zone includes a second material that is less rapidly etchable than the first material for a particular etchant. The first material and the second material are etched with the particular etchant to form an open crater in the concave part and thus to form a pointed region of the element.
摘要翻译：公开了一种用于制造集成电路尖锐元件的方法。元件具有突出部，其凹部朝向元件引导其凹面。元件包括第一可蚀刻材料。围绕元件的凹部形成区域。该区域包括与用于特定蚀刻剂的第一材料不太可蚀刻的第二材料。用特定的蚀刻剂蚀刻第一材料和第二材料，以在凹部中形成开放的凹坑，从而形成元件的尖锐区域。

6. 发明授权

US09000494B2 Micromechanical device and methods to fabricate same using hard mask resistant to structure release etch 有权
标题翻译：微机械装置和使用耐掩模结构释放蚀刻的硬掩模制造相同的方法
公开(公告)号：US09000494B2
公开(公告)日：2015-04-07
申请号：US13624307
申请日：2012-09-21
申请人： International Business Machines Corporation
发明人： Michael A. Guillorn , Fei Liu , Ying Zhang
IPC分类号： H01L29/84 , B81C1/00 , H01H1/00
CPC分类号： B81C1/00396 , B81B2201/018 , B81B2207/015 , B81C1/00476 , B81C1/00801 , B81C2201/0132 , H01H1/0036 , H01H1/0094
摘要： A structure includes a silicon layer disposed on a buried oxide layer that is disposed on a substrate; at least one transistor device formed on or in the silicon layer, the at least one transistor having metallization; a released region of the silicon layer disposed over a cavity in the buried oxide layer; a back end of line (BEOL) dielectric film stack overlying the silicon layer and the at least one transistor device; a nitride layer overlying the BEOL dielectric film stack; a hard mask formed as a layer of hafnium oxide overlying the nitride layer; and an opening made through the layer of hafnium oxide, the layer of nitride and the BEOL dielectric film stack to expose the released region of the silicon layer disposed over the cavity in the buried oxide layer. The hard mask protects the underlying material during a MEMS/NEMS HF vapor release procedure.
摘要翻译：一种结构包括设置在设置在基板上的掩埋氧化物层上的硅层; 至少一个晶体管器件形成在硅层上或硅层中，所述至少一个晶体管具有金属化; 所述硅层的释放区域设置在所述掩埋氧化物层中的空腔上方; 覆盖所述硅层和所述至少一个晶体管器件的后端（BEOL）电介质膜堆叠; 覆盖在BEOL电介质膜叠层上的氮化物层; 形成为覆盖氮化物层的氧化铪层的硬掩模; 以及通过氧化铪层，氮化物层和BEOL电介质膜叠层形成的开口，以暴露位于掩埋氧化物层中的空腔上方的硅层的释放区域。在MEMS / NEMS HF蒸汽释放过程中，硬掩模保护底层材料。

7. 发明授权

US08912652B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08912652B2
公开(公告)日：2014-12-16
申请号：US13906441
申请日：2013-05-31
申请人： Dongbu HiTek Co., Ltd.
发明人： Ki Wan Bang
IPC分类号： H01L23/00 , G01B11/14 , H01H35/14 , H01H35/02 , H01H1/16
CPC分类号： H01L24/11 , B81B2201/018 , B81B2201/0271 , B81B2203/033 , B81C1/00182 , G01B11/14 , H01H1/16 , H01H35/02 , H01H35/142 , H01L24/13 , H01L2924/1461 , H01L2924/0001
摘要： Embodiments relate to a method for manufacturing a semiconductor device including at least one of: (1) Forming a lower electrode pattern on a substrate. (2) Forming an etch stop film on/over the lower electrode pattern. (3) Forming a first interlayer insulating layer on/over the etch stop film. (4) Forming an upper electrode pattern on/over the first interlayer insulating layer. (5) Forming a second interlayer insulating layer on/over the upper electrode pattern. (6) Forming an etch blocking layer positioned between the lower electrode pattern and the upper electrode pattern which passes through the second interlayer insulating layer and the first interlayer insulating layer. (7) Forming a cavity which exposes a side of the etch blocking layer by etching the second interlayer insulating layer and the first interlayer insulating layer. (8) Forming a contact ball in the cavity.
摘要翻译：实施例涉及一种用于制造半导体器件的方法，所述半导体器件包括以下至少一个：（1）在衬底上形成下电极图案。（2）在下电极图案之上/之上形成蚀刻停止膜。（3）在蚀刻停止膜上/之上形成第一层间绝缘层。（4）在第一层间绝缘层上形成上电极图案。（5）在上电极图案之上/之上形成第二层间绝缘层。（6）形成位于通过第二层间绝缘层和第一层间绝缘层的下电极图案和上电极图案之间的蚀刻阻挡层。（7）通过蚀刻第二层间绝缘层和第一层间绝缘层，形成露出蚀刻阻挡层的一侧的空腔。（8）在空腔中形成接触球。

8. 发明授权

US08907720B2 Capacitive switch, apparatus for transceiving signal, and manufacturing method thereof 有权
标题翻译：电容开关，收发信号装置及其制造方法
公开(公告)号：US08907720B2
公开(公告)日：2014-12-09
申请号：US14144095
申请日：2013-12-30
申请人： Huawei Device Co., Ltd.
发明人： Xiong Yang , Bocheng Cao , Lei Wang
IPC分类号： H01L25/00 , H01H21/18 , H01H11/00
CPC分类号： B81B3/0072 , B81B3/001 , B81B2201/014 , B81B2201/018 , H01G5/16 , H01H59/0009
摘要： A capacitive switch includes: a first conductive cantilever, a second conductive cantilever, a substrate, a coplanar waveguide arranged on the substrate, the coplanar waveguide includes a first conductor configured to transmit an electrical signal, a second conductor and a third conductor are arranged as ground wires on two sides of the first conductor; an insulation medium layer is arranged on the first conductor, a conducting layer is arranged on the insulation medium layer; the first conductive cantilever is connected to the second conductor by using a first fixed end, the second conductive cantilever is connected to the third conductor by using a second fixed end; when a direct-current signal is transmitted on the capacitive switch, a first free end of the first conductive cantilever and a second free end of the second conductive cantilever contact the conducting layer.
摘要翻译：电容开关包括：第一导电悬臂，第二导电悬臂，衬底，布置在衬底上的共面波导，共面波导包括被配置为传输电信号的第一导体，第二导体和第三导体被布置为第一导体两侧接地线; 绝缘介质层布置在第一导体上，导电层设置在绝缘介质层上; 第一导电悬臂通过使用第一固定端连接到第二导体，第二导电悬臂通过使用第二固定端连接到第三导体; 当在电容性开关上传输直流信号时，第一导电悬臂的第一自由端和第二导电悬臂的第二自由端接触导电层。

9. 发明授权

US08786130B1 Method of forming an electromechanical power switch for controlling power to integrated circuit devices and related devices 有权
标题翻译：形成用于控制集成电路器件和相关器件的功率的机电电源开关的方法
公开(公告)号：US08786130B1
公开(公告)日：2014-07-22
申请号：US13975216
申请日：2013-08-23
申请人： INOSO, LLC
发明人： Kiyoshi Mori , Ziep Tran , Giang T. Dao , Michael E. Ramon
IPC分类号： H02J1/00 , B81B3/00 , H03K3/01
CPC分类号： B81C1/0023 , B81B2201/018 , B81B2207/012 , B81B2207/053 , H01H59/0009 , Y10T307/461
摘要： A method of forming an electromechanical power switch for controlling power to integrated circuit (IC) devices and related devices. At least some of the illustrative embodiments are methods comprising forming at least one IC device on a front surface of a semiconductor substrate. The at least one IC device includes at least one circuit block and at least one power switch circuit. A dielectric layer is deposited on the IC device, and first and second electromechanical power switches are formed on the dielectric layer. The first power switch gates a voltage to the circuit block and the second power switch gates the voltage to the IC device. The first power switch is actuated by the power switch circuit, and the voltage to the circuit block is switched off. Alternatively, the second power switch is actuated by the power switch circuit, and the voltage to the IC device is switched off.
摘要翻译：一种形成用于控制集成电路（IC）装置和相关装置的电力的机电电源开关的方法。示例性实施例中的至少一些是包括在半导体衬底的前表面上形成至少一个IC器件的方法。所述至少一个IC器件包括至少一个电路块和至少一个功率开关电路。电介质层沉积在IC器件上，第一和第二机电电源开关形成在电介质层上。第一电源开关对电路块施加电压，并且第二电源开关将电压门控到IC器件。第一电源开关由电源开关电路驱动，电路块的电压关闭。或者，第二电源开关由电源开关电路驱动，并且IC器件的电压被切断。

10. 发明申请

US20140183014A1 ELECTRIC EQUIPMENT HAVING MOVABLE PORTION, AND ITS MANUFACTURE 有权
标题翻译：具有可移动部分的电气设备及其制造
公开(公告)号：US20140183014A1
公开(公告)日：2014-07-03
申请号：US14202437
申请日：2014-03-10
申请人： FUJITSU LIMITED
发明人： Hiroaki INOUE , Xiaoyu Mi
IPC分类号： H01H1/00 , H01H59/00 , B81B3/00
CPC分类号： H01H1/0036 , B81B3/0072 , B81B3/0097 , B81B2201/018 , B81B2203/0118 , H01G5/16 , H01H59/0009
摘要： On seed metal layer of first metal, pedestal and counter electrode are formed of second metal by plating, adjacent to free space region. The free space region is filled with first sacrificial layer. By using resist pattern, second sacrificial metal layer is formed, extending from the first sacrificial layer to a portion of the pedestal, and lower structure of third metal is formed on the second sacrificial layer, by contiguous plating, exposing a portion of the pedestal not formed with the second sacrificial layer, the third metal having composition and thermal expansion coefficient equivalent to the second metal. Upper structure of fourth metal having composition and thermal expansion coefficient equivalent to the second and third metals is formed on the pedestal and the lower structure by plating. The first and second sacrificial layers are removed, leaving an electric equipment with a movable portion.
摘要翻译：在第一金属的种子金属层上，基座和对电极通过电镀形成第二金属，邻近自由空间区域。自由空间区域填充有第一牺牲层。通过使用抗蚀剂图案，形成从第一牺牲层延伸到基座的一部分的第二牺牲金属层，并且通过连续的电镀在第二牺牲层上形成第三金属的下部结构，使基座的一部分不暴露形成有第二牺牲层，第三金属具有与第二金属相当的组成和热膨胀系数。具有与第二和第三金属相当的组成和热膨胀系数的第四金属的上部结构通过电镀形成在基座和下部结构上。去除第一和第二牺牲层，留下具有可移动部分的电气设备。

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