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1. 发明授权

US08865367B2 Gas decomposition component 有权
标题翻译：气体分解成分
公开(公告)号：US08865367B2
公开(公告)日：2014-10-21
申请号：US13702246
申请日：2011-06-06
申请人： Chihiro Hiraiwa , Masatoshi Majima , Tetsuya Kuwabara , Tomoyuki Awazu , Toshio Ueda , Toshiyuki Kuramoto
发明人： Chihiro Hiraiwa , Masatoshi Majima , Tetsuya Kuwabara , Tomoyuki Awazu , Toshio Ueda , Toshiyuki Kuramoto
IPC分类号： H01M8/12 , H01M8/02 , C25B9/00 , B01D53/32 , C25B1/00
CPC分类号： H01M8/122 , B01D53/326 , B01D2255/104 , B01D2255/20707 , B01D2255/20738 , B01D2255/20753 , B01D2257/404 , B01D2257/406 , B01D2257/708 , B01D2258/0216 , C25B1/00 , C25B9/00 , H01M8/0258 , H01M8/0267 , H01M8/1213 , H01M8/1231 , H01M8/241 , Y02E60/521 , Y02E60/525
摘要： Provided is a gas decomposition component that employs an electrochemical reaction and can have high treatment performance, in particular, an ammonia decomposition component. The gas decomposition component includes a MEA 7 including a solid electrolyte 1 and an anode 2 and a cathode 5 that are disposed so as to sandwich the solid electrolyte; Celmets 11s electrically connected to the anode 2; a heater 41 that heats the MEA; and an inlet 17 through which a gaseous fluid containing a gas is introduced into the MEA, an outlet 19 through which the gaseous fluid having passed through the MEA is discharged, and a passage P extending between the inlet and the outlet, wherein the Celmets 11s are discontinuously disposed along the passage P and, with respect to a middle position 15 of the passage, the length of the Celmets disposed is larger on the side of the outlet than on the side of the inlet.
摘要翻译：提供了采用电化学反应并且可以具有高处理性能的气体分解成分，特别是氨分解成分。气体分解成分包括MEA7，MEA7包括固体电解质1和阳极2和阴极5，其被设置为夹着固体电解质; 电连接到阳极2的硅片11; 加热MEA的加热器41; 以及入口17，含有气体的气态流体通过该入口被引入到MEA中，通过MEA流出的气态流体排出出口19以及在入口和出口之间延伸的通道P，其中Celmets 11s 沿着通道P不连续地设置，并且相对于通道的中间位置15，所设置的塞子的长度在出口侧比在入口侧更大。

2. 发明申请

US20130084514A1 GAS DECOMPOSITION COMPONENT, AMMONIA DECOMPOSITION COMPONENT, POWER GENERATION APPARATUS, ELECTROCHEMICAL REACTION APPARATUS, AND METHOD FOR PRODUCING GAS DECOMPOSITION COMPONENT 有权
标题翻译：气体分解成分，氨分解成分，发电装置，电化学反应装置及气体分解成分的制造方法
公开(公告)号：US20130084514A1
公开(公告)日：2013-04-04
申请号：US13702221
申请日：2011-06-06
申请人： Chihiro Hiraiwa , Masatoshi Majima , Tetsuya Kuwabara , Tomoyuki Awazu , Toshio Ueda , Toshiyuki Kuramoto
发明人： Chihiro Hiraiwa , Masatoshi Majima , Tetsuya Kuwabara , Tomoyuki Awazu , Toshio Ueda , Toshiyuki Kuramoto
IPC分类号： H01M8/12 , C25B9/00 , C25B13/02 , C25B1/00 , C25B11/02
CPC分类号： H01M8/122 , B01D53/326 , B01D2255/104 , B01D2255/20707 , B01D2255/20738 , B01D2255/20753 , B01D2257/404 , B01D2257/406 , B01D2257/708 , B01D2258/0216 , C25B1/00 , C25B9/00 , C25B9/10 , C25B11/02 , C25B13/02 , H01M8/0252 , H01M8/1213 , H01M8/124 , Y02E60/521 , Y02E60/525 , Y02P70/56 , Y10T29/49108
摘要： Provided are a gas decomposition component in which an electrochemical reaction is used to reduce the running cost and high treatment performance can be achieved; and a method for producing the gas decomposition component. The gas decomposition component includes a cylindrical MEA 7 including an anode 2 on an inner-surface side, a cathode 5 on an outer-surface side, and a solid electrolyte 1 sandwiched between the anode and the cathode; a porous metal body 11s that is inserted on the inner-surface side of the cylindrical MEA and is in contact with the first electrode; and a central conductive rod 11k inserted so as to serve as an electrically conductive shaft of the porous metal body 11s.
摘要翻译：提供使用电化学反应来降低运行成本并且可以实现高处理性能的气体分解成分; 以及气体分解成分的制造方法。气体分解成分包括在内表面侧具有阳极2，外表面侧的阴极5和夹在阳极和阴极之间的固体电解质1的圆筒状MEA7。多孔金属体11s，其插入在圆筒状MEA的内表面侧并与第一电极接触; 以及插入以用作多孔金属体11s的导电轴的中心导电杆11k。

3. 发明授权

US08377567B2 Highly corrosion-resistant porous metal member 有权
标题翻译：高度耐腐蚀的多孔金属构件
公开(公告)号：US08377567B2
公开(公告)日：2013-02-19
申请号：US13111488
申请日：2011-05-19
申请人： Kazuki Okuno , Masahiro Kato , Tomoyuki Awazu , Masatoshi Majima , Hidetoshi Saito , Keiji Shiraishi , Hitoshi Tsuchida , Junichi Nishimura
发明人： Kazuki Okuno , Masahiro Kato , Tomoyuki Awazu , Masatoshi Majima , Hidetoshi Saito , Keiji Shiraishi , Hitoshi Tsuchida , Junichi Nishimura
IPC分类号： B32B5/18 , B32B15/04
CPC分类号： H01M4/661 , H01G9/008 , H01M4/808 , H01M10/052 , Y10T428/12479 , Y10T428/12944
摘要： A porous metal member composed of an alloy at least containing nickel and tungsten is provided. The alloy may contain 50 to 80 wt % of nickel and 20 to 50 wt % of tungsten and may further contain 10 wt % or less of phosphorus and/or 10 wt % or less of boron. Such a porous metal member can be produced by, for example, making a porous base such as a urethane foam be electrically conductive, forming an alloy film containing nickel and tungsten, then removing the porous base from the alloy film, and subsequently reducing the alloy.
摘要翻译：提供由至少包含镍和钨的合金构成的多孔金属构件。该合金可以含有50〜80重量％的镍和20〜50重量％的钨，还可以含有10重量％以下的磷和/或10重量％以下的硼。这样的多孔金属构件可以通过例如使聚氨酯泡沫等多孔质基体导电，形成含有镍和钨的合金膜，然后从合金膜除去多孔质基底，然后还原合金。

4. 发明申请

US20110287279A1 HIGHLY CORROSION-RESISTANT POROUS METAL MEMBER 有权
标题翻译：高耐腐蚀多孔金属成员
公开(公告)号：US20110287279A1
公开(公告)日：2011-11-24
申请号：US13111488
申请日：2011-05-19
申请人： Kazuki OKUNO , Masahiro KATO , Tomoyuki AWAZU , Masatoshi MAJIMA , Hidetoshi SAITO , Keiji SHIRAISHI , Hitoshi TSUCHIDA , Junichi NISHIMURA
发明人： Kazuki OKUNO , Masahiro KATO , Tomoyuki AWAZU , Masatoshi MAJIMA , Hidetoshi SAITO , Keiji SHIRAISHI , Hitoshi TSUCHIDA , Junichi NISHIMURA
IPC分类号： B32B5/18 , B32B15/00
CPC分类号： H01M4/661 , H01G9/008 , H01M4/808 , H01M10/052 , Y10T428/12479 , Y10T428/12944
摘要： A porous metal member composed of an alloy at least containing nickel and tungsten is provided. The alloy may contain 50 to 80 wt % of nickel and 20 to 50 wt % of tungsten and may further contain 10 wt % or less of phosphorus and/or 10 wt % or less of boron. Such a porous metal member can be produced by, for example, making a porous base such as a urethane foam be electrically conductive, forming an alloy film containing nickel and tungsten, then removing the porous base from the alloy film, and subsequently reducing the alloy.
摘要翻译：提供由至少包含镍和钨的合金构成的多孔金属构件。该合金可以含有50〜80重量％的镍和20〜50重量％的钨，还可以含有10重量％以下的磷和/或10重量％以下的硼。这样的多孔金属构件可以通过例如使聚氨酯泡沫等多孔质基体导电，形成含有镍和钨的合金膜，然后从合金膜除去多孔质基底，然后还原合金。

5. 发明申请

US20100044364A1 HEATING UNIT AND THE APPARATUS HAVING THE SAME 审中-公开
标题翻译：加热单元和具有相同设备的设备
公开(公告)号：US20100044364A1
公开(公告)日：2010-02-25
申请号：US12610769
申请日：2009-11-02
申请人： Akira MIKUMO , Tomoyuki Awazu , Masuhiro Matsuhara , Hirohiko Nakata
发明人： Akira MIKUMO , Tomoyuki Awazu , Masuhiro Matsuhara , Hirohiko Nakata
IPC分类号： H05B3/68
CPC分类号： H05B3/265 , H01L21/67109
摘要： A heater unit that much improves accuracy in thermal uniformity of an object of heating during cooling, particularly rapid cooling, is provided. The heater unit in accordance with the present invention includes a heater substrate for mounting an object of heating and performing heat treatment thereon, and a cooling module for cooling the heater substrate, and between said heater substrate and the cooling module, an intervening body is arranged. Utilizing deformability of the intervening body, ratio of a non-contact portion can be reduced than when the intervening body is not provided, and temperature uniformity of the heater substrate at the time of cooling can be improved.
摘要翻译：提供了一种加热器单元，其大大提高了冷却期间加热对象的热均匀性的精度，特别是快速冷却。根据本发明的加热器单元包括用于安装加热物体并在其上进行热处理的加热器基板，以及用于冷却加热器基板的冷却模块，并且在所述加热器基板和冷却模块之间布置有中间体。利用中间体的可变形性，可以比不设置中间体时的非接触部分的比例降低，并且可以提高冷却时的加热器基板的温度均匀性。

6. 发明授权

US07576303B2 Wafer holder, and wafer prober provided therewith 有权
标题翻译：晶片支架，以及提供的晶圆探针
公开(公告)号：US07576303B2
公开(公告)日：2009-08-18
申请号：US11701417
申请日：2007-02-02
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
IPC分类号： H05B3/68 , C23C16/00
CPC分类号： G01R31/2865 , H01L21/68757
摘要： A wafer holder is provided having high rigidity and an enhanced heat-insulating effect that allow positional accuracy and heating uniformity to be improved, a chip to be rapidly heated and cooled, and the manufacturing cost to be reduced, and a wafer prober apparatus on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, a support member for supporting the chuck top, and a stand for supporting the support member. The chuck top has a thermal conductivity K1 and a Young's modulus Y1; the support member has a thermal conductivity K2 and a Young's modulus Y2; and the stand has a thermal conductivity K3 and a Young's modulus Y3. K1>K2 and K1>K3; and Y3>Y1 and Y3>Y2.
摘要翻译：提供了具有高刚性和增强的隔热效果的晶片保持器，其允许提高位置精度和加热均匀性，快速加热和冷却的芯片，以及降低的制造成本，以及晶片探测器装置，其上安装晶片保持架。本发明的晶片保持器包括用于安装晶片的卡盘顶部，用于支撑卡盘顶部的支撑构件和用于支撑支撑构件的支架。卡盘顶部具有导热系数K1和杨氏模量Y1; 支撑构件具有热传导率K2和杨氏模量Y2; 并且支架具有热导率K3和杨氏模量Y3。 K1> K2和K1> K3; Y3> Y1和Y3> Y2。

7. 发明申请

US20090045829A1 Wafer holder for wafer prober and wafer prober equipped with same 审中-公开
标题翻译：用于晶圆探针和晶圆探测器的晶片支架配备相同
公开(公告)号：US20090045829A1
公开(公告)日：2009-02-19
申请号：US11496019
申请日：2006-07-31
申请人： Tomoyuki Awazu , Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Tomoyuki Awazu , Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： G01R31/26 , H05B3/68
CPC分类号： G01R31/2865 , G01R31/2875
摘要： It is an object of the present invention to provide a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith.A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top, wherein, a restricting member is provided that covers an interface between the chuck top and the support member. By covering the gap between the chuck top and the support member with the restricting member, the heat insulating effect can be increased by preventing the flow of outside air through the gap into the support member, and the cooling rate can be particularly improved if cooling to a temperature below room temperature.
摘要翻译：本发明的目的是提供一种高度刚性的晶片探针晶片保持器，并且增加隔热效果，从而提高位置精度，热均匀性以及芯片温度升高和冷却速度，以及晶片探测器装备的装置。本发明的晶片保持器包括安装晶片的卡盘顶部和支撑卡盘顶部的支撑构件，其中设置有限制构件，该限制构件覆盖卡盘顶部和支撑构件之间的界面。通过用限制构件覆盖卡盘顶部和支撑构件之间的间隙，可以通过防止外部空气通过间隙流入支撑构件而提高隔热效果，并且如果冷却至温度低于室温。

8. 发明申请

US20070029740A1 Body for keeping a wafer, method of manufacturing the same and device using the same 审中-公开
标题翻译：用于保持晶片的本体，其制造方法以及使用其的装置
公开(公告)号：US20070029740A1
公开(公告)日：2007-02-08
申请号：US11482101
申请日：2006-07-07
申请人： Masuhiro Natsuhara , Katsuhiro Itakura , Tomoyuki Awazu , Hirohiko Nakata , Akira Mikumo
发明人： Masuhiro Natsuhara , Katsuhiro Itakura , Tomoyuki Awazu , Hirohiko Nakata , Akira Mikumo
IPC分类号： B23B31/30
CPC分类号： H01L21/67109 , H01L21/67103 , Y10T279/11
摘要： A wafer holding body for placing a semiconductor wafer, a method of manufacturing the same, and an device using the wafer holding body are provided, wherein a channel is formed in the wafer holding body.
摘要翻译：提供了一种用于放置半导体晶片的晶片保持体，其制造方法和使用该晶片保持体的器件，其中在晶片保持体中形成沟道。

9. 发明申请

US20060201918A1 Heater for semiconductor manufacturing device 审中-公开
标题翻译：半导体制造装置用加热器
公开(公告)号：US20060201918A1
公开(公告)日：2006-09-14
申请号：US11339430
申请日：2006-01-26
申请人： Tomoyuki Awazu , Hirohiko Nakata , Akira Kuibira
发明人： Tomoyuki Awazu , Hirohiko Nakata , Akira Kuibira
IPC分类号： B23K9/00 , B23K9/02
CPC分类号： H01L21/67103
摘要： A heater that enables a more even temperature distribution in the time from commencement of heating until completion of cooling, and a device is equipped with the same, are provided. The heater for a semiconductor fabrication device of the present invention comprises a substrate having a heating surface that heats an article to be processed that is placed thereupon or separated therefrom by a set distance and a resistive heating element. The heat capacity of the substrate forms a distribution within the substrate. The substrate, or a portion thereof, is preferably made from one type of metal or a composite of two or more types of metal.
摘要翻译：提供一种加热器，其能够在从开始加热到完成冷却的时间内实现更均匀的温度分布，并且装置配备有加热器。本发明的半导体制造装置的加热器包括具有加热表面的基板，该加热表面加热被放置在其上或与其隔开一定距离的待加工物品和电阻加热元件。衬底的热容量在衬底内形成分布。基材或其一部分优选由一种金属或两种或更多种金属的复合材料制成。

10. 发明授权

US06301774B1 Process for manufacturing a superconducting composite 失效
标题翻译：制造超导复合材料的工艺
公开(公告)号：US06301774B1
公开(公告)日：2001-10-16
申请号：US08906855
申请日：1997-08-06
申请人： Susumu Yamamoto , Teruyuki Murai , Nozomu Kawabe , Tomoyuki Awazu , Shuji Yazu , Tetsuji Jodai
发明人： Susumu Yamamoto , Teruyuki Murai , Nozomu Kawabe , Tomoyuki Awazu , Shuji Yazu , Tetsuji Jodai
IPC分类号： H01L3924
CPC分类号： H01L39/143 , H01L39/248 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704 , Y10T29/49014 , Y10T428/31678
摘要： A superconducting composite comprising a compound oxide type superconductor and an outer metal pipe on which said superconductor is supported, characterized in that (i) said outer metal pipe is made of at least one of metals selected from a group comprising gold, silver and platinum metals and their alloys or (ii) an intermediate layer made of these precious metals is interposed between the compound oxide and the metal pipe. The composite may be in a form of a solid pipe or a hollow pipe having a superconducting thin layer deposited on an inner surface of the metal pipe.
摘要翻译：一种超导复合体，其包含复合氧化物型超导体和外部金属管，所述超导体被支撑在所述外部金属管上，其特征在于，（i）所述外部金属管由选自金，银和铂金属的金属中的至少一种制成并且它们的合金或（ii）由这些贵金属制成的中间层插入在复合氧化物和金属管之间。复合材料可以是固体管或中空管的形式，其具有沉积在内部的超导薄层金属管表面。

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