专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130214844A1 SWITCH CONTROL CIRCUIT, SEMICONDUCTOR DEVICE, AND RADIO COMMUNICATION DEVICE 有权
标题翻译：开关控制电路，半导体器件和无线电通信设备
公开(公告)号：US20130214844A1
公开(公告)日：2013-08-22
申请号：US13485049
申请日：2012-05-31
申请人： Toshiki SESHITA
发明人： Toshiki SESHITA
IPC分类号： H03K17/00
CPC分类号： H03K17/002 , H03K17/102 , H03K17/6221 , H03K17/693 , H03K19/018521 , H04B1/48
摘要： A switch control circuit has a first terminal, a second terminal, a third terminal, a serial-parallel converter, a selector, a driver circuit and a tri-state buffer. The serial-parallel converter converts a serial switching control signal inputted from the third terminal into first parallel switching control signals when the first terminal is at a first power-supply potential. The selector selects either the first parallel switching control signals converted by the serial-parallel converter or second parallel switching control signals inputted into the second and third terminals, depending on the potential of the first terminal. The driver circuit converts potential levels of the first parallel switching control signals or the second parallel switching control signals selected by the selector and generates parallel switching control signals with potential levels capable of switching a switch circuit.
摘要翻译：开关控制电路具有第一端子，第二端子，第三端子，串并联转换器，选择器，驱动器电路和三态缓冲器。当第一端子处于第一电源电位时，串并联转换器将从第三端子输入的串行开关控制信号转换为第一并联开关控制信号。选择器根据第一终端的电位来选择由串并转换器转换的第一并行切换控制信号或输入到第二和第三终端的第二并行切换控制信号。驱动器电路转换第一并联开关控制信号的电位电平或由选择器选择的第二并联开关控制信号，并产生具有能够切换开关电路的电位电平的并行开关控制信号。

2. 发明授权

US08487688B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08487688B2
公开(公告)日：2013-07-16
申请号：US13229985
申请日：2011-09-12
申请人： Toshiki Seshita
发明人： Toshiki Seshita
IPC分类号： H03K3/00
CPC分类号： H03K3/02 , H01L27/1203
摘要： According to one embodiment, a semiconductor device includes an interface, a power supply, a driver, and a switch section. The interface includes a first MOSFET and converts a terminal switch signal of input serial data into parallel data. The first MOSFET is provided on the SOI substrate and has a back gate in a floating state. The power supply includes a second MOSFET and generates an ON potential higher than a potential of a power supply to be supplied to the interface. The second MOSFET is provided on the SOI substrate and has a back gate connected to a source. The driver includes a third MOSFET and outputs a control signal for controlling the ON potential to be in a high level according to the parallel data. The third MOSFET is provided on the SOI substrate and has a back gate connected to a source.
摘要翻译：根据一个实施例，半导体器件包括接口，电源，驱动器和开关部分。该接口包括第一个MOSFET，并将输入串行数据的终端开关信号转换为并行数据。第一个MOSFET被提供在SOI衬底上并且具有处于浮置状态的背栅极。电源包括第二MOSFET并且产生高于要供应到接口的电源的电位的导通电位。第二个MOSFET设置在SOI衬底上，并具有连接到源极的背栅极。驱动器包括第三MOSFET，并且根据并行数据输出用于控制ON电位处于高电平的控制信号。第三个MOSFET被提供在SOI衬底上并具有连接到源极的背栅极。

3. 发明授权

US08391805B2 Radio frequency switch 有权
标题翻译：射频开关
公开(公告)号：US08391805B2
公开(公告)日：2013-03-05
申请号：US13052473
申请日：2011-03-21
申请人： Toshifumi Ishimori , Toshiki Seshita , Mitsuru Sugawara
发明人： Toshifumi Ishimori , Toshiki Seshita , Mitsuru Sugawara
IPC分类号： H04B1/44
CPC分类号： H03K17/687 , H03K17/063 , H03K17/162 , H03K17/693 , H03K2217/0036 , H03K2217/0054 , H04B1/48
摘要： According to one embodiment, a semiconductor switch circuit includes a switch section, a decoder section, a DC-DC converter, a driver section, a first filter circuit, a first filter bypass circuit and a first bypass control circuit. The switch section includes an input-output terminal, radio frequency signal terminals, and semiconductor switch elements. The decoder section generates a switch control signal controlling a conduction and a non-conduction state of switch elements. The DC-DC converter generates a first potential. The driver section supplies the first and a second potential to a gate electrode of the switch elements. The first filter circuit is electrically connected between the DC-DC converter and the driver section and outputs the first potential to the driver section. The first filter bypass circuit is electrically connected with the first filter circuit. The first bypass control circuit supplies a first mode signal to the first filter bypass circuit.
摘要翻译：根据一个实施例，半导体开关电路包括开关部分，解码器部分，DC-DC转换器，驱动器部分，第一滤波器电路，第一滤波器旁路电路和第一旁路控制电路。开关部分包括输入输出端子，射频信号端子和半导体开关元件。解码器部分产生控制开关元件的导通和非导通状态的开关控制信号。 DC-DC转换器产生第一电位。驱动器部分将第一和第二电位提供给开关元件的栅电极。第一滤波器电路电连接在DC-DC转换器和驱动器部分之间，并将第一电位输出到驱动器部分。第一滤波器旁路电路与第一滤波器电路电连接。第一旁路控制电路向第一滤波器旁路电路提供第一模式信号。

4. 发明申请

US20130038362A1 SEMICONDUCTOR SWITCH 失效
标题翻译：半导体开关
公开(公告)号：US20130038362A1
公开(公告)日：2013-02-14
申请号：US13614108
申请日：2012-09-13
申请人： Toshiki Seshita
发明人： Toshiki Seshita
IPC分类号： H03L5/00 , H03K3/00 , H03L7/00
CPC分类号： H03K17/693
摘要： According to one embodiment, a semiconductor switch includes a voltage generator, a driver, a switch section, and a power supply controller. The voltage generator is configured to generate a first potential and a negative second potential. The first potential is higher than a power supply voltage supplied to a power supply terminal. The driver is connected to an output of the voltage generator and is configured to output the first potential in response to input of high level and to output the second potential in response to input of low level. The switch section is configured to switch connection between terminals in response to an output of the driver. The power supply controller is configured to control the output of the voltage generator.
摘要翻译：根据一个实施例，半导体开关包括电压发生器，驱动器，开关部分和电源控制器。电压发生器被配置为产生第一电位和负第二电位。第一个电位高于供给电源端子的电源电压。驱动器连接到电压发生器的输出端，并且被配置为响应于高电平的输入而输出第一电位，并且响应于低电平的输入而输出第二电位。开关部分被配置为响应于驱动器的输出来切换端子之间的连接。电源控制器被配置为控制电压发生器的输出。

5. 发明申请

US20130005279A1 SEMICONDUCTOR SWITCH AND WIRELESS DEVICE 审中-公开
标题翻译：半导体开关和无线设备
公开(公告)号：US20130005279A1
公开(公告)日：2013-01-03
申请号：US13422559
申请日：2012-03-16
申请人： Toshifumi ISHIMORI , Toshiki Seshita
发明人： Toshifumi ISHIMORI , Toshiki Seshita
IPC分类号： H04B1/44 , H03K17/687 , H03K17/56
CPC分类号： H03K17/693 , H03K17/145 , H03K2217/0081 , H04B1/48
摘要： According to one embodiment, a semiconductor switch includes a switch section, a driver, and a power supply. The switch section switches a connection between a common terminal and a plurality of radio-frequency terminals. The driver outputs a control signal to the switch section based on a terminal switching signal. The power supply generates a first potential based on a reference potential varying in accordance with temperature and outputs the first potential to the driver.
摘要翻译：根据一个实施例，半导体开关包括开关部分，驱动器和电源。开关部分切换公共端子和多个射频终端之间的连接。驱动器根据终端切换信号向开关部输出控制信号。电源基于根据温度变化的参考电位产生第一电位，并将第一电位输出给驾驶员。

6. 发明申请

US20120182061A1 RADIO-FREQUENCY SWITCH CIRCUIT 有权
标题翻译：无线电频率开关电路
公开(公告)号：US20120182061A1
公开(公告)日：2012-07-19
申请号：US13432610
申请日：2012-03-28
申请人： Toshiki Seshita , Hirotsugu Wakimoto
发明人： Toshiki Seshita , Hirotsugu Wakimoto
IPC分类号： H03K17/687
CPC分类号： H03K17/693 , H03K2217/0036 , H03K2217/0054 , H04B1/005 , H04B1/48
摘要： A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.
摘要翻译：本发明的射频开关电路包括：天线端子和每个射频端子串联连接的n级通过FET（场效应晶体管），其中n是自然数; 连接到通过FET的栅极的射频防漏电阻器; 通常连接到连接到同一射频终端的n级通过FET的栅极的控制信号线; 和连接到至少两个控制信号线中的每一个并连接到串联的射频防漏电阻器的电阻器。两个控制信号线电容耦合在电阻器和通过FET之间。

7. 发明申请

US20120068757A1 SEMICONDUCTOR SWITCH 审中-公开
标题翻译：半导体开关
公开(公告)号：US20120068757A1
公开(公告)日：2012-03-22
申请号：US13046934
申请日：2011-03-14
申请人： Toshiki Seshita , Mitsuru Sugawara
发明人： Toshiki Seshita , Mitsuru Sugawara
IPC分类号： H03K17/687 , H03K17/56
CPC分类号： H03K17/693 , H03K3/356104 , H03K17/102 , H03K2217/0054
摘要： According to one embodiment, a semiconductor switch includes a power supply circuit, a control circuit and a switch circuit. The power supply circuit includes an internal potential generator connected to a power supply, and a first transistor connected between an input and an output of the internal potential generator. The internal potential generator generates a first potential higher than an input potential. The first transistor is turned on when the first potential becomes lower than the input potential and has a threshold voltage being set so as to keep the first potential not lower than the input potential. The control circuit is configured to receive the first potential to output a high-level or low-level control signal. The switch circuit is configured to receive an input of the control signal to switch connection between terminals.
摘要翻译：根据一个实施例，半导体开关包括电源电路，控制电路和开关电路。电源电路包括连接到电源的内部电位发生器和连接在内部电位发生器的输入和输出端之间的第一晶体管。内部电位发生器产生高于输入电位的第一电位。当第一电位变得低于输入电位时，第一晶体管导通，并且设置阈值电压以使第一电位不低于输入电位。控制电路被配置为接收第一电位以输出高电平或低电平控制信号。开关电路被配置为接收控制信号的输入以切换端子之间的连接。

8. 发明授权

US06617919B2 RF amplifier 失效
公开(公告)号：US06617919B2
公开(公告)日：2003-09-09
申请号：US10056078
申请日：2002-01-28
申请人： Toshiki Seshita
发明人： Toshiki Seshita
IPC分类号： H03F100
CPC分类号： H05K1/0237 , H01L2224/05554 , H01L2224/48247 , H01L2224/49171 , H01L2924/1305 , H01L2924/13091 , H03F3/601 , H05K1/0231 , H05K1/114 , H05K2201/093 , H05K2201/09663 , H05K2201/10689 , H01L2924/00
摘要： A node for commonly supplying a ground potential in an amplification circuit (MMIC11) is formed. The input and output system ground surfaces of a printed wiring board (PWB) on which the amplification circuit (MMIC11) is to be mounted are electrically separated from each other on the printed wiring board (PWB). Since no ground pattern is present on the amplification circuit (MMIC11), the ground node of the amplification circuit (MMIC11) serves as a means for supplying a true ground potential. While a compact package is realized by preventing an increase in number of leads, oscillation is prevented, so a high gain can be realized.

9. 发明授权

US06292390B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06292390B1
公开(公告)日：2001-09-18
申请号：US09755143
申请日：2001-01-08
申请人： Koji Sakui , Takehiro Hasegawa , Shigeyoshi Watanabe , Fujio Masuoka , Tsuneaki Fuse , Toshiki Seshita , Seiichi Aritome , Akihiro Nitayama , Fumio Horiguchi
发明人： Koji Sakui , Takehiro Hasegawa , Shigeyoshi Watanabe , Fujio Masuoka , Tsuneaki Fuse , Toshiki Seshita , Seiichi Aritome , Akihiro Nitayama , Fumio Horiguchi
IPC分类号： G11C1134
CPC分类号： H01L27/1025 , G11C11/39 , H01L29/36 , H01L29/42304 , H01L29/456 , H01L29/73 , H01L29/7322 , H01L29/885 , H03F3/04 , H03K3/021 , H03K17/567
摘要： A semiconductor device includes a bipolar transistor whose emitter-collector voltage is set to satisfy a condition IBE
摘要翻译：半导体器件包括双极晶体管，其发射极 - 集电极电压被设置为满足条件IBE

10. 发明授权

US5077492A BiCMOS circuitry having a combination CMOS gate and a bipolar transistor 失效
标题翻译：具有组合CMOS栅极和双极晶体管的BICMOS电路
公开(公告)号：US5077492A
公开(公告)日：1991-12-31
申请号：US440670
申请日：1989-11-24
申请人： Tsuneaki Fuse , Satomi Nakano , Toshiki Seshita , Koji Sakui
发明人： Tsuneaki Fuse , Satomi Nakano , Toshiki Seshita , Koji Sakui
IPC分类号： H01L21/8249 , H01L27/06 , H03K17/567 , H03K19/00 , H03K19/003 , H03K19/08 , H03K19/0944 , H03K17/16
CPC分类号： H01L27/0623 , H03K19/0013 , H03K19/00384 , H03K19/09448
摘要： A level shift element is contained in a through current path of a CMOS gate of a BiCMOS circuit. The level shift element limits an amplitude of an input signal to the BiCMOS circuit. The limited amplitude of the input signal controls the impact ionization within the CMOS gate, and the increase of a substrate current resulting from the impact ionization, and reduces the through current.
摘要翻译：电平移位元件包含在BiCMOS电路的CMOS栅极的贯通电流路径中。电平移位元件将输入信号的幅度限制到BiCMOS电路。输入信号的有限幅度控制CMOS栅极内的冲击电离，以及由冲击电离引起的衬底电流的增加，并减小通过电流。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式