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    • 5. 发明授权
    • Silica-on-silicon-based hybrid integrated optoelectronic chip and manufacturing method therefor
    • 硅基硅基混合集成光电芯片及其制造方法
    • US09482831B2
    • 2016-11-01
    • US14758416
    • 2013-12-26
    • Wuhan Telecommunication Devices Co., Ltd.
    • Liang ZhouXiaoge CaoXianghong Yu
    • G02B6/12G02B6/42G02B6/30G02B6/122H01L31/12H01L31/18
    • G02B6/4257G02B6/122G02B6/305G02B6/42G02B6/4224G02B6/4232H01L31/02327H01L31/12H01L31/18
    • Provided are a silica-on-silicon-based hybrid integrated optoelectronic chip and a manufacturing method therefor. The hybrid integrated optoelectronic chip comprises a silicon substrate (1), wherein the surface of the silicon substrate (1) is provided with a platform (8), lug bosses (6,7) and a groove (10); a silica waveguide element (2) is arranged in the groove (10), the lug bosses (6,7) are protruded from the surface of the platform (8), and the surface of the platform (8) is provided with a discontinuous metal electrode layer (3); and the surface of the metal electrode layer (3) is provided with solder bumps (4), and an active optoelectronic chip (5) is arranged above the solder bumps (4) and the lug bosses (6, 7). In the manufacturing method, multi-step processes including material growth, hot oxygen bonding, flip-chip bonding, lithography alignment and the like are adopted, thereby guaranteeing the high-efficiency light coupling among waveguide devices of different materials, and reducing the light reflection between waveguide end faces. A high-frequency electrode composed of alternating current electrode areas (26) is manufactured between the alignment lug bosses (6, 7). Due to the fact that flip-chip bonding technology is beneficial to the transmission of high-frequency signals, integration level between devices is improved. Meanwhile, the process design not only can achieve the chip-level probe test, but also can be used for the subsequent gold ball bonding or wedge bonding process, thereby facilitating the achievement of encapsulation and mass production of hybrid integrated chips.
    • 提供了一种基于硅的硅基混合集成光电芯片及其制造方法。 所述混合集成光电芯片包括硅衬底(1),其中所述硅衬底(1)的表面设置有平台(8),凸耳凸起(6,7)和凹槽(10); 在所述凹槽(10)中布置有二氧化硅波导元件(2),所述凸耳凸起(6,7)从所述平台(8)的表面突出,并且所述平台(8)的表面设置有不连续 金属电极层(3); 并且金属电极层(3)的表面设置有焊锡凸块(4),并且在焊料凸块(4)和凸耳凸起(6,7)上方布置有源光电芯片(5)。 在制造方法中,采用包括材料生长,热氧键合,倒装芯片接合,光刻对准等多步法,从而保证不同材料的波导器件之间的高效率的光耦合,并减少光反射 在波导端面之间。 在对准凸耳凸起(6,7)之间制造由交流电极区域(26)构成的高频电极。 由于倒装芯片接合技术有利于高频信号的传输,提高了器件之间的集成度。 同时,该工艺设计不仅可以实现芯片级探头测试,而且可以用于随后的金球接合或楔形粘合工艺,从而有助于实现混合集成芯片的封装和批量生产。
    • 6. 发明申请
    • SILICA-ON-SILICON-BASED HYBRID INTEGRATED OPTOELECTRONIC CHIP AND MANUFACTURING METHOD THEREFOR
    • 二氧化硅 - 基于硅的混合光电芯片及其制造方法
    • US20150355424A1
    • 2015-12-10
    • US14758416
    • 2013-12-26
    • WUHAN TELECOMMUNICATION DEVICES CO., LTD.
    • Liang ZHOUXiaoge CAOXianghong YU
    • G02B6/42G02B6/122G02B6/30
    • G02B6/4257G02B6/122G02B6/305G02B6/42G02B6/4224G02B6/4232H01L31/02327H01L31/12H01L31/18
    • Provided are a silica-on-silicon-based hybrid integrated optoelectronic chip and a manufacturing method therefor. The hybrid integrated optoelectronic chip comprises a silicon substrate (1), wherein the surface of the silicon substrate (1) is provided with a platform (8), lug bosses (6,7) and a groove (10); a silica waveguide element (2) is arranged in the groove (10), the lug bosses (6,7) are protruded from the surface of the platform (8), and the surface of the platform (8) is provided with a discontinuous metal electrode layer (3); and the surface of the metal electrode layer (3) is provided with solder bumps (4), and an active optoelectronic chip (5) is arranged above the solder bumps (4) and the lug bosses (6, 7). In the manufacturing method, multi-step processes including material growth, hot oxygen bonding, flip-chip bonding, lithography alignment and the like are adopted, thereby guaranteeing the high-efficiency light coupling among waveguide devices of different materials, and reducing the light reflection between waveguide end faces. A high-frequency electrode composed of alternating current electrode areas (26) is manufactured between the alignment lug bosses (6, 7). Due to the fact that flip-chip bonding technology is beneficial to the transmission of high-frequency signals, integration level between devices is improved. Meanwhile, the process design not only can achieve the chip-level probe test, but also can be used for the subsequent gold ball bonding or wedge bonding process, thereby facilitating the achievement of encapsulation and mass production of hybrid integrated chips.
    • 提供了一种基于硅的硅基混合集成光电芯片及其制造方法。 所述混合集成光电芯片包括硅衬底(1),其中所述硅衬底(1)的表面设置有平台(8),凸耳凸起(6,7)和凹槽(10); 在所述凹槽(10)中布置有二氧化硅波导元件(2),所述凸耳凸起(6,7)从所述平台(8)的表面突出,并且所述平台(8)的表面设置有不连续 金属电极层(3); 并且金属电极层(3)的表面设置有焊锡凸块(4),并且在焊料凸块(4)和凸耳凸起(6,7)上方布置有源光电芯片(5)。 在制造方法中,采用包括材料生长,热氧键合,倒装芯片接合,光刻对准等多步法,从而保证不同材料的波导器件之间的高效率的光耦合,并减少光反射 在波导端面之间。 在对准凸耳凸起(6,7)之间制造由交流电极区域(26)构成的高频电极。 由于倒装芯片接合技术有利于高频信号的传输,提高了器件之间的集成度。 同时,该工艺设计不仅可以实现芯片级探头测试,而且可以用于随后的金球接合或楔形粘合工艺,从而有助于实现混合集成芯片的封装和批量生产。