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    • 1. 发明授权
    • Fabricating magnetic recording media on patterned seed layers
    • 在图案种子层上制造磁记录介质
    • US08546001B2
    • 2013-10-01
    • US12827080
    • 2010-06-30
    • Elizabeth DobiszDavid MarguliesOlav HellwigXiao Z. Wu
    • Elizabeth DobiszDavid MarguliesOlav HellwigXiao Z. Wu
    • G11B5/66B05D5/12
    • G11B5/82B82Y10/00G11B5/743G11B5/746G11B5/855
    • Patterned media and associated methods of fabrication are provided in which vertical magnetic grains are grown on a patterned seed layer. The patterned seed layer includes a matrix of islands of a first seed material. Each island of first seed material is separated from other islands by a region of second seed material. The first seed material is selected to initiate growth of magnetic material, and the second seed material is selected to initiate growth of non-magnetic material. Subsequently, magnetic material is grown on the first seed material and non-magnetic material is grown on the second seed material. Deposition may be simultaneously. The magnetic and non-magnetic materials form well-defined vertical columns over the first and second seed materials respectively. Thus, each island behaves as an isolated magnetic unit, which switches independently from its neighbor units, which are magnetically separated by the non-magnetic material.
    • 提供了图案化的介质和相关联的制造方法,其中在图案种子层上生长垂直磁性颗粒。 图案化种子层包括第一种子材料的岛的基质。 第一种子材料的每个岛通过第二种子材料的区域与其他岛屿分离。 选择第一种子材料以引发磁性材料的生长,并且选择第二种子材料以引发非磁性材料的生长。 随后,在第一种子材料上生长磁性材料,并且在第二种子材料上生长非磁性材料。 沉积可能同时进行。 磁性和非磁性材料分别在第一种子材料和第二种子材料上形成明确的垂直柱。 因此,每个岛作为孤立的磁性单元,其独立地从其相邻单元切换,其被非磁性材料磁分离。
    • 4. 发明申请
    • MAGNETORESISTIVE SENSOR HAVING A STRUCTURE FOR ACTIVATING AND DEACTIVATING ELECTROSTATIC DISCHARGE PREVENTION CIRCUITRY
    • 具有用于激活和消除静电放电防止电路的结构的磁传感器
    • US20080037182A1
    • 2008-02-14
    • US11426908
    • 2006-06-27
    • Thomas Robert AlbrechtRobert E. FontanaBruce Alvin GurneyTimothy Clark ReileyXiao Z. Wu
    • Thomas Robert AlbrechtRobert E. FontanaBruce Alvin GurneyTimothy Clark ReileyXiao Z. Wu
    • G11B5/33G11B5/127
    • G11B5/40
    • A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive. Another possible programmable resistor uses a phase change material that can change between an amorphous high resistance state and a crystalline low resistance state upon the application of a certain heat treatments.
    • 用于在制造期间防止静电放电(ESD)损坏磁阻传感器的结构。 该结构包括开关元件,该开关元件可以在测试传感器期间关闭,然后重新接通以向传感器提供ESD分流。 开关可以是内置在滑块上的热激活机械继电器。 开关也可以是可编程电阻器,其包括夹在第一和第二电极之间的固体电解质。 电极之一用作阳极。 当沿第一方向施加电压时,离子桥跨越电解质跨过电极跨过电极,使电阻器导电。 当沿第二个方向施加电压时,离子桥退出,可编程电阻基本上不导电。 另一种可能的可编程电阻器使用相变材料,其可以在施加某种热处理时在非晶高电阻状态和结晶低电阻状态之间变化。