专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09054122B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09054122B2
公开(公告)日：2015-06-09
申请号：US13471389
申请日：2012-05-14
申请人： Satoshi Maeda , Yasushi Sekine , Tetsuya Watanabe
发明人： Satoshi Maeda , Yasushi Sekine , Tetsuya Watanabe
IPC分类号： H01L21/02 , H01L49/02 , H01L23/522 , H01L27/06 , H01L27/02
CPC分类号： H01L28/60 , H01L23/5223 , H01L27/0207 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.
摘要翻译：为了提高具有电容元件的半导体器件的性能。在半导体衬底上形成MIM型电容元件，其电极形成有由配线构成的梳状金属图案。作为用于防止CMP工艺中的凹陷的伪栅极图案的导体图案和作为虚拟有源区的有源区域设置在电容元件下方，并且这些导体图案耦合到由布线和然后连接到固定电位。然后，导体图案和有源区域被布置为不以平面方式与布线中的梳状金属图案重叠。

2. 发明授权

US08766399B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08766399B2
公开(公告)日：2014-07-01
申请号：US13471323
申请日：2012-05-14
申请人： Satoshi Maeda , Yasushi Sekine , Tetsuya Watanabe
发明人： Satoshi Maeda , Yasushi Sekine , Tetsuya Watanabe
IPC分类号： H01L29/00
CPC分类号： H01L28/60 , H01L23/5223 , H01L27/0207 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.
摘要翻译：为了提高具有电容元件的半导体器件的性能。在半导体衬底上形成MIM型电容元件，其电极形成有由配线构成的梳状金属图案。作为用于防止CMP工艺中的凹陷的伪栅极图案的导体图案和作为虚拟有源区的有源区域设置在电容元件下方，并且这些导体图案耦合到由布线和然后连接到固定电位。然后，导体图案和有源区域被布置为不以平面方式与布线中的梳状金属图案重叠。

3. 发明申请

US20120223375A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120223375A1
公开(公告)日：2012-09-06
申请号：US13471389
申请日：2012-05-14
申请人： Satoshi MAEDA , Yasushi SEKINE , Tetsuya WATANABE
发明人： Satoshi MAEDA , Yasushi SEKINE , Tetsuya WATANABE
IPC分类号： H01L27/06
CPC分类号： H01L28/60 , H01L23/5223 , H01L27/0207 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.
摘要翻译：为了提高具有电容元件的半导体器件的性能。在半导体衬底上形成MIM型电容元件，其电极形成有由配线构成的梳状金属图案。作为用于防止CMP工艺中的凹陷的伪栅极图案的导体图案和作为虚拟有源区的有源区域设置在电容元件下方，并且这些导体图案耦合到由布线和然后连接到固定电位。然后，导体图案和有源区域被布置为不以平面方式与布线中的梳状金属图案重叠。

4. 发明授权

US08198698B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US08198698B2
公开(公告)日：2012-06-12
申请号：US12395202
申请日：2009-02-27
申请人： Satoshi Maeda , Yasushi Sekine , Tetsuya Watanabe
发明人： Satoshi Maeda , Yasushi Sekine , Tetsuya Watanabe
IPC分类号： H01L21/70 , H01L21/02
CPC分类号： H01L28/60 , H01L23/5223 , H01L27/0207 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.
摘要翻译：为了提高具有电容元件的半导体器件的性能。在半导体衬底上形成MIM型电容元件，其电极形成有由配线构成的梳状金属图案。作为用于防止CMP工艺中的凹陷的伪栅极图案的导体图案和作为虚拟有源区的有源区域设置在电容元件下方，并且这些导体图案耦合到由布线和然后连接到固定电位。然后，导体图案和有源区域被布置为不以平面方式与布线中的梳状金属图案重叠。

5. 发明申请

US20090236648A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20090236648A1
公开(公告)日：2009-09-24
申请号：US12395202
申请日：2009-02-27
申请人： Satoshi MAEDA , Yasushi Sekine , Tetsuya Watanabe
发明人： Satoshi MAEDA , Yasushi Sekine , Tetsuya Watanabe
IPC分类号： H01L27/06
CPC分类号： H01L28/60 , H01L23/5223 , H01L27/0207 , H01L27/0629 , H01L2924/0002 , H01L2924/00
摘要： To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.
摘要翻译：为了提高具有电容元件的半导体器件的性能。在半导体衬底上形成MIM型电容元件，其电极形成有由配线构成的梳状金属图案。作为用于防止CMP工艺中的凹陷的伪栅极图案的导体图案和作为虚拟有源区的有源区域设置在电容元件下方，并且这些导体图案耦合到由布线和然后连接到固定电位。然后，导体图案和有源区域被布置为不以平面方式与布线中的梳状金属图案重叠。

6. 发明授权

US5910010A Semiconductor integrated circuit device, and process and apparatus for manufacturing the same 失效
标题翻译：半导体集成电路器件及其制造方法和装置
公开(公告)号：US5910010A
公开(公告)日：1999-06-08
申请号：US732215
申请日：1997-02-18
申请人： Hirotaka Nishizawa , Tomoyoshi Miura , Ichirou Anjou , Masamichi Ishihara , Masahiro Yamamura , Sadao Morita , Takashi Araki , Kiyoshi Inoue , Toshio Sugano , Tetsuji Kohara , Toshio Yamada , Yasushi Sekine , Yoshiaki Anata , Masakatsu Goto , Norihiko Kasai , Shinobu Takeura , Mutsuo Tsukuda , Yasunori Yamaguchi , Jiro Sawada , Hidetoshi Iwai , Seiichiro Tsukui , Tadao Kaji , Noboru Shiozawa
发明人： Hirotaka Nishizawa , Tomoyoshi Miura , Ichirou Anjou , Masamichi Ishihara , Masahiro Yamamura , Sadao Morita , Takashi Araki , Kiyoshi Inoue , Toshio Sugano , Tetsuji Kohara , Toshio Yamada , Yasushi Sekine , Yoshiaki Anata , Masakatsu Goto , Norihiko Kasai , Shinobu Takeura , Mutsuo Tsukuda , Yasunori Yamaguchi , Jiro Sawada , Hidetoshi Iwai , Seiichiro Tsukui , Tadao Kaji , Noboru Shiozawa
IPC分类号： H01L21/56 , H01L21/98 , H01L23/495 , H01L25/065 , H01L21/52 , H01L21/58 , H01L21/60
CPC分类号： H01L24/06 , H01L21/565 , H01L23/4951 , H01L23/49575 , H01L25/0657 , H01L25/50 , H01L2224/04042 , H01L2224/05554 , H01L2224/06136 , H01L2224/32245 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/4826 , H01L2224/49171 , H01L2224/73215 , H01L2225/06527 , H01L2225/06551 , H01L2225/06582 , H01L2225/06586 , H01L2225/06589 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/0105 , H01L2924/01055 , H01L2924/01058 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/1815 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/351
摘要： A method of manufacturing a semiconductor integrated circuit device includes the steps of constructing a plurality of lead frames having leads which each include an inner portion and an outer portion and electrically connecting a semiconductor chip to the inner portions of the leads of each frame. The lead frames are then stacked one above each other to form a vertical stack and plates are then inserted between each of the lead frames with each plate having an opening in the center whereby a central cavity is formed in the stack. The stack is then placed between a top mold member and a bottom mold member and a resin is injected into the central cavity whereupon the resin is cured to form a single resin package encapsulating the semiconductor chips. The resin package is then released from the mold members.
摘要翻译： PCT No.PCT / JP95 / 00662 Sec。 371日期1997年2月18日 102（e）日期1997年2月18日PCT提交1995年4月5日PCT公布。 WO95 / 29506 PCT公开号日期：1995年11月2日制造半导体集成电路器件的方法包括以下步骤：构造多个引线框架，引线框架各自包括内部部分和外部部分，并将半导体芯片电连接到引线的内部每一帧。然后将引线框架彼此堆叠以形成垂直堆叠，然后将板在每个引线框架之间插入，每个板在中心具有开口，由此在堆叠中形成中心空腔。然后将堆叠放置在顶模构件和底模构件之间，并将树脂注入到中心腔中，由此树脂固化以形成封装半导体芯片的单个树脂封装。然后将树脂包装从模具部件中释放出来。

7. 发明授权

US07285189B2 Method for steam reforming of chain hydrocarbon 失效
标题翻译：链烃的蒸汽重整方法
公开(公告)号：US07285189B2
公开(公告)日：2007-10-23
申请号：US10296174
申请日：2001-03-19
申请人： Yasushi Sekine , Kouhei Urasaki , Shigeru Kado , Kaoru Fujimoto
发明人： Yasushi Sekine , Kouhei Urasaki , Shigeru Kado , Kaoru Fujimoto
IPC分类号： C01B3/24
CPC分类号： C01B3/342 , B01J19/088 , B01J19/2415 , B01J2219/0254 , B01J2219/0809 , B01J2219/0828 , B01J2219/0883 , C01B2203/0216 , C01B2203/0283 , C01B2203/0861 , C01B2203/1247
摘要： Disclosed is a novel method for steam reforming, by which selectivity to carbon monoxide is high, which is free from various side reactions, which may be carried out at a lower temperature and at a lower pressure than the conventional methods, and which may be carried out even if a catalyst is not used. In the method of the present invention, direct current pulse discharge is performed in a mixed gas containing a gaseous chain hydrocarbon and water vapor so as to react the chain hydrocarbon and the water vapor, thereby generating hydrogen and carbon monoxide.
摘要翻译：公开了一种用于蒸汽重整的新方法，其通过其对一氧化碳的选择性高，没有各种副反应，其可以在比常规方法更低的温度和更低的压力下进行，并且可以携带即使不使用催化剂。在本发明的方法中，在含有气态链烃和水蒸汽的混合气体中进行直流脉冲放电，以使链烃和水蒸汽反应，从而产生氢气和一氧化碳。

8. 发明申请

US20120075029A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20120075029A1
公开(公告)日：2012-03-29
申请号：US13191076
申请日：2011-07-26
申请人： Yasushi SEKINE , Tadato Yamagata
发明人： Yasushi SEKINE , Tadato Yamagata
IPC分类号： H03B5/12 , H01L25/00 , H01C7/00
CPC分类号： H01L28/24 , H01L27/016 , H01L27/0802 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device having resistance elements small in temperature dependence of the resistance value. The semiconductor device has metal resistance element layers. The metal resistance element layer includes a resistance film layer. The other metal resistance element layer includes another metal resistance film layer. The metal resistance film layer is one of titanium nitride resistance and tantalum nitride resistance. The other metal resistance film layer is the other of the titanium nitride resistance and the tantalum nitride resistance. The resistance value of titanium nitride resistance has a positive temperature coefficient. Whereas, the resistance value of tantalum nitride resistance has a negative temperature coefficient. A contact plug electrically couples the metal resistance film layer with the other metal resistance film layer. Therefore, the temperature coefficient of the titanium nitride resistance and the temperature coefficient of the tantalum nitride resistance cancel each other. This can reduce the temperature coefficient.
摘要翻译：提供了具有电阻值温度依赖性小的电阻元件的半导体器件。半导体器件具有金属电阻元件层。金属电阻元件层包括电阻膜层。另一个金属电阻元件层包括另一金属电阻膜层。金属电阻膜层是氮化钛电阻和氮化钽电阻之一。另一个金属电阻膜层是氮化钛电阻和氮化钽电阻中的另一个。氮化钛电阻的电阻值为正温度系数。而氮化钽电阻的电阻值为负温度系数。接触插塞将金属电阻膜层与另一金属电阻膜层电耦合。因此，氮化钛电阻的温度系数和氮化钽电阻的温度系数相互抵消。这可以降低温度系数。

9. 发明申请

US20110178350A1 Dehydrogenation Catalyst of Alkylaromatic Compounds Having High Redox Ability, Process for Producing Same, And Dehydrogenation Method Using Same 审中-公开
标题翻译：具有高氧化还原能力的烷基芳族化合物的脱氢催化剂，其制备方法和使用其的脱氢方法
公开(公告)号：US20110178350A1
公开(公告)日：2011-07-21
申请号：US13119012
申请日：2008-09-22
申请人： Eiichi Kikuchi , Yasushi Sekine , Yuji Mishima
发明人： Eiichi Kikuchi , Yasushi Sekine , Yuji Mishima
IPC分类号： C07C5/42 , B01J23/34 , B01J23/889 , B01J37/04 , B01J37/08
CPC分类号： C07C5/3332 , B01J23/002 , B01J23/34 , B01J23/8892 , B01J35/0033 , B01J37/0009 , B01J2523/00 , C07C2523/34 , C07C2523/889 , C07C15/46 , B01J2523/25 , B01J2523/3706 , B01J2523/72 , B01J2523/842
摘要： The object of the present invention is to provide the catalyst used in a process for preparation of alkenylaromatic compounds by dehydrogenating alkyl aromatic compounds by means of steam as a diluent, wherein the catalyst prevents the block and corrosion caused by the alkali metal component migrated from the catalyst, and the process for producing same, and the dehydrogenation method using it.The solid catalyst which has the high redox ability and comprises no alkali metal component migrated from the catalyst in the presence of steam with high temperature is used.
摘要翻译：本发明的目的是提供在通过蒸汽作为稀释剂将烷基芳族化合物脱氢制备链烯基芳族化合物的方法中使用的催化剂，其中催化剂防止由碱金属组分迁移的阻塞和腐蚀催化剂及其制备方法，以及使用它的脱氢方法。使用具有高氧化还原能力并且不存在在高温蒸汽存在下从催化剂中迁移的碱金属组分的固体催化剂。

10. 发明授权

US07771675B2 Fuel supply device for internal combustion and control method therefor 有权
标题翻译：内燃机燃油供应装置及其控制方法
公开(公告)号：US07771675B2
公开(公告)日：2010-08-10
申请号：US11700757
申请日：2007-02-21
申请人： Isamu Hotta , Masaaki Kubo , Eiji Takahashi , Koichi Ashida , Yasushi Sekine
发明人： Isamu Hotta , Masaaki Kubo , Eiji Takahashi , Koichi Ashida , Yasushi Sekine
IPC分类号： B01J8/02 , F02B7/00
CPC分类号： F02M27/02 , F02D19/08 , F02M25/12 , Y02T10/121 , Y02T10/36
摘要： A reforming catalyst (6) induces an isomerization reforming reaction and a decomposition reforming reaction of a gasoline fuel. Injectors (27, 33, 35, 36) supply an isomerized fuel generated by the isomerization reforming reaction and a decomposed fuel generated by the decomposition reforming reaction respectively to the internal combustion engine (1). The ratio of the isomerization reforming reaction and the decomposition reforming reaction depends on a catalyst temperature, and can be altered arbitrarily by controlling an air supply amount to the catalyst (6) via an air amount regulating valve (14) and a fuel supply amount to the catalyst (6) via a fuel injector (8) and thereby controlling the catalyst temperature.
摘要翻译：重整催化剂（6）引发汽油燃料的异构化重整反应和分解重整反应。喷射器（27,33,35,36）将由异构化重整反应产生的异构化燃料和分解重整反应产生的分解燃料分别供给内燃机（1）。异构化重整反应和分解重整反应的比例取决于催化剂温度，并且可以通过经由空气量调节阀（14）控制到催化剂（6）的空气供应量和燃料供给量催化剂（6）经由燃料喷射器（8），从而控制催化剂温度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式