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    • 3. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE
    • 半导体存储器件
    • US20120273858A1
    • 2012-11-01
    • US13454437
    • 2012-04-24
    • Yasuyuki Takahashi
    • Yasuyuki Takahashi
    • H01L29/94
    • H01L29/263G11C7/12G11C7/16G11C15/046H01L27/108H01L27/1156H01L27/1207
    • An object is to provide a semiconductor memory device that enables low power consumption of a memory cell of a CAM including a nonvolatile memory device. Another object is to provide a semiconductor memory device without degradation due to repeated data writing. Still another object is to provide a nonvolatile memory device that enables high density of memory cells. A semiconductor memory device is provided which includes a memory circuit including a first transistor including an oxide semiconductor in a semiconductor layer, and a capacitor in which a potential corresponding to written data can be retained by turning off the first transistor; and a reference circuit for referring the written potential. The semiconductor memory device enables a high-speed search function by obtaining the address of data generated by detecting the conducting state of a second transistor in the reference circuit.
    • 目的在于提供一种半导体存储器件,其能够实现包括非易失性存储器件的CAM的存储单元的低功耗。 另一个目的是提供一种由于重复的数据写入而不劣化的半导体存储器件。 另一个目的是提供一种能够实现高密度存储单元的非易失性存储器件。 提供了一种半导体存储器件,其包括存储电路,该存储电路包括:半导体层中包括氧化物半导体的第一晶体管;以及电容器,其中通过关闭第一晶体管可以保持对应于写入数据的电位; 以及用于参考写入电位的参考电路。 半导体存储器件通过获得通过检测参考电路中的第二晶体管的导通状态产生的数据的地址,实现高速搜索功能。