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1. 发明授权

US07804567B2 Normally-white twisted-nematic-mode LCD device 有权
标题翻译：普通白色扭曲向列型液晶显示器件
公开(公告)号：US07804567B2
公开(公告)日：2010-09-28
申请号：US11280569
申请日：2005-11-16
申请人： Hidenori Ikeno , Yoichi Sasaki
发明人： Hidenori Ikeno , Yoichi Sasaki
IPC分类号： G02F1/1335
CPC分类号： G02F1/133632 , G02F1/1396 , G02F2203/66 , G02F2413/105
摘要： A normally-white twisted-nematic mode LCD device includes a first optical compensation film between a light-incident-side polarization film and an LC cell, and a second optical compensation film between a light-emitting-side polarization film and the LC cell. The optical axis of the first (second) optical compensation film projected onto the substrate surface is substantially parallel to the longer axis of an equivalent refractive index ellipsoid of a residual retardation of the LC layer in the vicinity of a light-incident-side (light-emitting-side) substrate upon display of black color.
摘要翻译：普通白色双向向列模式LCD装置包括光入射侧偏振膜和LC单元之间的第一光学补偿膜，以及发光侧偏振膜和LC单元之间的第二光学补偿膜。投影到基板表面上的第一（第二）光学补偿膜的光轴基本上平行于光入射侧附近的LC层的残留延迟的等效折射率椭圆体的长轴（光发光面）基板显示黑色。

2. 发明授权

US07615498B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07615498B2
公开(公告)日：2009-11-10
申请号：US11655261
申请日：2007-01-19
申请人： Yoichi Sasaki , Koichi Ohto , Noboru Morita , Tatsuya Usami , Hidenobu Miyamoto
发明人： Yoichi Sasaki , Koichi Ohto , Noboru Morita , Tatsuya Usami , Hidenobu Miyamoto
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76835 , H01L21/76801 , H01L21/76807 , H01L21/76832
摘要： A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.
摘要翻译：半导体器件200包括形成在半导体衬底（未示出）上的SiCN膜202，形成在其上的第一SiOC膜204，形成在其上的SiCN膜208，形成在其上的第二SiOC膜210，SiO 2膜212和SiCN膜 214。第一SiOC膜204具有形成在其中的阻挡金属层216和通孔218，并且第二SiOC膜210具有形成在其中的阻挡金属层220和布线金属层222。第二SiOC膜210的碳含量被调节为大于第一SiOC膜204的碳含量。这使得可以在保持绝缘夹层的低介电常数的同时，改善绝缘中间层与其它绝缘层的粘附性。

3. 发明授权

US07531891B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07531891B2
公开(公告)日：2009-05-12
申请号：US11006529
申请日：2004-12-08
申请人： Koichi Ohto , Tatsuya Usami , Yoichi Sasaki
发明人： Koichi Ohto , Tatsuya Usami , Yoichi Sasaki
IPC分类号： H01L23/58 , H01L29/00 , H01L21/31
CPC分类号： H01L21/76801 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , Y10S438/931 , H01L2924/00
摘要： A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes. A SiOC film is deposited to a thickness of 300 nm via a plasma CVD process, in which a flow rate of trimethylsilane gas is stepwise increased. In this case, the film density of the deposited SiOC film is gradually decreased by stepwise increasing the flow rate of trimethylsilane gas. Since trimethylsilane contains methyl group, trimethylsilane has more bulky molecular structure in comparison with monosilane or the like. Thus, the film density is decreased by increasing the amount of trimethylsilane in the reactant gas.
摘要翻译：通过在具有膜密度分布的层间绝缘膜中提供多层膜，其中膜密度逐渐变化，提供了具有改善的构成层间绝缘膜的膜之间粘附性的半导体器件。通过等离子体CVD工艺沉积厚度为300nm的SiOC膜，其中三甲基硅烷气体的流量逐步增加。在这种情况下，通过逐步增加三甲基硅烷气体的流量，沉积的SiOC膜的膜密度逐渐降低。由于三甲基硅烷含有甲基，因此与甲硅烷等相比，三甲基硅烷具有更大的分子结构。因此，通过增加反应气体中的三甲基硅烷的量来降低膜密度。

4. 发明申请

US20080123036A1 LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20080123036A1
公开(公告)日：2008-05-29
申请号：US11944473
申请日：2007-11-23
申请人： Yoichi SASAKI , Teruaki Suzuki , Mitsuhiro Sugimoto , Chikaaki Mizoguchi , Hiromitsu Tanaka
发明人： Yoichi SASAKI , Teruaki Suzuki , Mitsuhiro Sugimoto , Chikaaki Mizoguchi , Hiromitsu Tanaka
IPC分类号： G02F1/1337
CPC分类号： G02F1/13378 , G02F1/133723 , G02F1/134363
摘要： A manufacturing method of the present invention is applied to manufacture of a liquid crystal display device comprising an array board, an opposing board opposing the array board, and a liquid crystal layer interposed between the pair of boards. The method includes a step of performing alignment processing on an alignment film formed on the surface of at least one of the pair of boards in contact with the liquid crystal. The alignment processing is performed by irradiating energy having an anisotropy such as ion beams to the alignment film in a plurality of steps while the energy intensity is set to be lowest in the final irradiation step.
摘要翻译：本发明的制造方法用于液晶显示装置的制造，该液晶显示装置包括阵列基板，与该阵列基板相对的对置基板和插入该一对基板之间的液晶层。该方法包括对形成在与液晶接触的一对板中的至少一个的表面上的取向膜进行取向处理的步骤。在最终照射步骤中将能量强度设定为最低时，通过以多个步骤将具有各向异性的离子束的能量照射到取向膜来进行取向处理。

5. 发明申请

US20070045861A1 Semiconductor device, and production method for manufacturing such semiconductor device 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070045861A1
公开(公告)日：2007-03-01
申请号：US11591704
申请日：2006-11-02
申请人： Koichi Ohto , Tatsuya Usami , Noboru Morita , Sadayuki Ohnishi , Koji Arita , Ryohei Kitao , Yoichi Sasaki
发明人： Koichi Ohto , Tatsuya Usami , Noboru Morita , Sadayuki Ohnishi , Koji Arita , Ryohei Kitao , Yoichi Sasaki
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53228 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device has a semiconductor substrate, and a multi-layered wiring arrangement provided thereon. The multi-layered wring arrangement includes at least one insulating layer structure having a metal wiring pattern formed therein. The insulating layer structure includes a first SiOCH layer, a second SiOCH layer formed on the first SiOCH layer, and a silicon dioxide (SiO2) layer formed on the second SiOCH layer. The second SiOCH layer features a carbon (C) density lower than that of the first SiOCH layer, a hydrogen (H) density lower than that of the first SiOCH layer, and an oxygen (O) density higher than that of the first SiOCH layer.
摘要翻译：半导体器件具有半导体衬底和设置在其上的多层布线装置。多层绞合装置包括其中形成有金属布线图案的至少一个绝缘层结构。绝缘层结构包括第一SiOCH层，形成在第一SiOCH层上的第二SiOCH层和形成在第二SiOCH层上的二氧化硅（SiO 2）层。第二SiOCH层的碳（C）密度低于第一SiOCH层的碳（C）密度，氢（H）密度低于第一SiOCH层的密度，氧（O）密度高于第一SiOCH层。

6. 发明申请

US20120309120A1 METHOD FOR MANUFACTURING A COLOR FILTER SUBSTRATE 有权
标题翻译：制造彩色滤光片基板的方法
公开(公告)号：US20120309120A1
公开(公告)日：2012-12-06
申请号：US13586102
申请日：2012-08-15
申请人： Sounosuke TAKAHASHI , Teruaki SUZUKI , Shinichi NISHIDA , Yoshikazu SAKAGUCHI , Yoichi SASAKI
发明人： Sounosuke TAKAHASHI , Teruaki SUZUKI , Shinichi NISHIDA , Yoshikazu SAKAGUCHI , Yoichi SASAKI
IPC分类号： H01L33/58
CPC分类号： G02F1/133514 , G02F1/133512
摘要： A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof.
摘要翻译： LCD单元中的遮光构件包括：第一屏蔽部分，其包括一堆两个滤色器图案，并且将相邻像素的有效开口的每个有效开口分隔开;以及第二屏蔽部分，其包括一堆三色滤波器图案并屏蔽包括TFT及其附近的TFT区域。

7. 发明授权

US08269924B2 Color filter substrate and liquid crystal display unit 有权
标题翻译：滤色片基板和液晶显示单元
公开(公告)号：US08269924B2
公开(公告)日：2012-09-18
申请号：US12344679
申请日：2008-12-29
申请人： Sounosuke Takahashi , Teruaki Suzuki , Shinichi Nishida , Yoshikazu Sakaguchi , Yoichi Sasaki
发明人： Sounosuke Takahashi , Teruaki Suzuki , Shinichi Nishida , Yoshikazu Sakaguchi , Yoichi Sasaki
IPC分类号： G02F1/1335
CPC分类号： G02F1/133514 , G02F1/133512
摘要： A light shield member in a LCD unit includes a first shield section that includes a pile of two color filter patterns and separates each effective opening of pixel from an effective opening of the adjacent pixel, and a second shield section that includes a pile of three color filter patterns and shields a TFT area including a TFT and the vicinity thereof.
摘要翻译： LCD单元中的遮光构件包括第一屏蔽部分，该第一屏蔽部分包括一堆两个滤色器图案，并且从相邻像素的有效开口分离出每个有效开口的像素;以及第二屏蔽部分，其包括一堆三色滤波器图案并屏蔽包括TFT及其附近的TFT区域。

8. 发明授权

US07834135B2 Light emitting device and polymeric mixed-metal complex 有权
标题翻译：发光器件和聚合物混合金属络合物
公开(公告)号：US07834135B2
公开(公告)日：2010-11-16
申请号：US11847703
申请日：2007-08-30
申请人： Akira Tsuboyama , Kazunori Ueno , Yoichi Sasaki , Kiyoshi Tsuge , Seiko Shibata , Motoshi Tamura
发明人： Akira Tsuboyama , Kazunori Ueno , Yoichi Sasaki , Kiyoshi Tsuge , Seiko Shibata , Motoshi Tamura
IPC分类号： C08G79/00
CPC分类号： C07F1/005 , C09K11/06 , C09K2211/1433 , C09K2211/1466 , C09K2211/188 , H05B33/14
摘要： To provide a light emitting device capable of emitting light with high efficiency and of being formed by a coating process, the present invention provides a light emitting device including as a light emitting material a polymeric mixed-metal complex containing two or more kinds of metals selected from Cu, Ag, and Au.
摘要翻译：为了提供能够以高效率发光并通过涂布工艺形成的发光器件，本发明提供了一种发光器件，其包括作为发光材料的包含选择了两种或更多种金属的聚合物混合金属络合物来自Cu，Ag和Au。

9. 发明授权

US07180191B2 Semiconductor device and method of manufacturing a semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07180191B2
公开(公告)日：2007-02-20
申请号：US11048929
申请日：2005-02-03
申请人： Yoichi Sasaki , Koichi Ohto , Noboru Morita , Tatsuya Usami , Hidenobu Miyamoto
发明人： Yoichi Sasaki , Koichi Ohto , Noboru Morita , Tatsuya Usami , Hidenobu Miyamoto
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76835 , H01L21/76801 , H01L21/76807 , H01L21/76832
摘要： A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.
摘要翻译：半导体器件200包括形成在半导体衬底（未示出）上的SiCN膜202，形成在其上的第一SiOC膜204，形成在其上的SiCN膜208，形成在其上的第二SiOC膜210， SUB>膜212和形成在其上的SiCN膜214。第一SiOC膜204具有形成在其中的阻挡金属层216和通孔218，并且第二SiOC膜210具有形成在其中的阻挡金属层220和布线金属层222。第二SiOC膜210的碳含量被调整为大于第一SiOC膜204的碳含量。这使得可以在保持绝缘中间层的低介电常数的同时提高绝缘中间层与其它绝缘层的粘附性。

10. 发明申请

US20080058498A1 LIGHT EMITTING DEVICE AND POLYMERIC MIXED-METAL COMPLEX 有权
标题翻译：发光装置和聚合物混合金属复合材料
公开(公告)号：US20080058498A1
公开(公告)日：2008-03-06
申请号：US11847703
申请日：2007-08-30
申请人： Akira Tsuboyama , Kazunori Ueno , Yoichi Sasaki , Kiyoshi Tsuge , Seiko Shibata , Motoshi Tamura
发明人： Akira Tsuboyama , Kazunori Ueno , Yoichi Sasaki , Kiyoshi Tsuge , Seiko Shibata , Motoshi Tamura
IPC分类号： C08G83/00
CPC分类号： C07F1/005 , C09K11/06 , C09K2211/1433 , C09K2211/1466 , C09K2211/188 , H05B33/14
摘要： To provide a light emitting device capable of emitting light with high efficiency and of being formed by a coating process, the present invention provides a light emitting device including as a light emitting material a polymeric mixed-metal complex containing two or more kinds of metals selected from Cu, Ag, and Au.
摘要翻译：为了提供能够以高效率发光并通过涂布工艺形成的发光器件，本发明提供了一种发光器件，其包括作为发光材料的包含选择了两种或更多种金属的聚合物混合金属络合物来自Cu，Ag和Au。

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