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1. 发明授权

US08749058B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08749058B2
公开(公告)日：2014-06-10
申请号：US13324925
申请日：2011-12-13
申请人： Tatsuya Usami , Hideaki Tsuchiya , Yukio Miura , Tomoyuki Nakamura , Koichi Ohto , Chikako Ohto , Shinji Yokogawa
发明人： Tatsuya Usami , Hideaki Tsuchiya , Yukio Miura , Tomoyuki Nakamura , Koichi Ohto , Chikako Ohto , Shinji Yokogawa
IPC分类号： H01L29/72
CPC分类号： H01L23/53295 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/3105 , H01L21/76826 , H01L21/76834 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si—N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cm−1 to 860 cm−1. This makes it possible to inhibit current leakage in a silicon nitride film, which is a barrier insulating film for preventing the diffusion of wiring metal.
摘要翻译：半导体器件包括层间绝缘膜，设置在层间绝缘膜中的布线以及设置在层间绝缘膜上并在布线上的SiN膜。通过FTIR测量的SiN膜的Si-N键的峰位置在845cm -1至860cm -1的范围内。这使得可以抑制作为用于防止布线金属扩散的阻挡绝缘膜的氮化硅膜中的电流泄漏。

2. 发明授权

US08617914B2 Method of forming semiconductor device having seal ring structure 有权
标题翻译：形成具有密封环结构的半导体器件的方法
公开(公告)号：US08617914B2
公开(公告)日：2013-12-31
申请号：US13137847
申请日：2011-09-16
申请人： Tatsuya Usami
发明人： Tatsuya Usami
IPC分类号： H01L21/00
CPC分类号： H01L21/76811 , H01L21/76808 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A method of producing a semiconductor device includes forming, on a first insulating film formed on a substrate, a first groove in an element-forming region to form one of a via and a wiring therein, and a first seal ring groove in a seal ring part, forming one of a via and a wiring in the first groove and a first metal layer in the first seal ring groove, and then removing the metal material in a part exposed to an outside of the first groove and the first seal ring groove, forming a second insulating film on the first insulating film, forming, on the second insulating film, a second groove, and a second seal ring groove in the seal ring part on the first seal ring groove, and forming one of a via and a wiring in the second groove and a second metal layer.
摘要翻译：一种制造半导体器件的方法包括在形成在基板上的第一绝缘膜上形成元件形成区域中的第一槽，以在其中形成通孔和布线之一，以及密封环中的第一密封环槽在第一槽中形成通孔和配线之一，在第一密封环槽中形成第一金属层，然后在暴露于第一槽和第一密封环槽的外侧的部分除去金属材料，在所述第一绝缘膜上形成第二绝缘膜，在所述第二绝缘膜上形成所述第一密封环槽中的所述密封环部分中的第二槽和第二密封环槽，并且形成通孔和布线在第二槽和第二金属层中。

3. 发明申请

US20120315751A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20120315751A1
公开(公告)日：2012-12-13
申请号：US13589712
申请日：2012-08-20
申请人： Tatsuya USAMI
发明人： Tatsuya USAMI
IPC分类号： H01L21/768
CPC分类号： H01L21/7682 , H01L21/76834 , H01L21/76885 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes forming a first insulating layer, forming a trench in the first insulating layer, forming an interconnect in the trench, forming a space between the first insulating layer and the interconnect, and disposing an upper surface of the interconnect at a position higher than an upper surface of the first insulating layer, forming an air gap in the space and forming an etching stopper film over the first insulating layer and the interconnect, forming a second insulating layer over the etching stopper film, and forming a via in the second insulating layer to be disposed over the interconnect.
摘要翻译：一种制造半导体器件的方法包括形成第一绝缘层，在第一绝缘层中形成沟槽，在沟槽中形成互连，在第一绝缘层和互连之间形成空间，并且布置互连的上表面在比第一绝缘层的上表面高的位置，在该空间中形成气隙，并在第一绝缘层和互连物上形成蚀刻阻挡膜，在蚀刻阻挡膜上形成第二绝缘层，形成通过在第二绝缘层中布置在互连上。

4. 发明申请

US20120181694A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120181694A1
公开(公告)日：2012-07-19
申请号：US13324925
申请日：2011-12-13
申请人： Tatsuya Usami , Hideaki Tsuchiya , Yukio Miura , Tomoyuki Nakamura , Koichi Ohto , Chikako Ohto , Shinji Yokogawa
发明人： Tatsuya Usami , Hideaki Tsuchiya , Yukio Miura , Tomoyuki Nakamura , Koichi Ohto , Chikako Ohto , Shinji Yokogawa
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L23/53295 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0234 , H01L21/3105 , H01L21/76826 , H01L21/76834 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si—N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cm−1 to 860 cm−1. This makes it possible to inhibit current leakage in a silicon nitride film, which is a barrier insulating film for preventing the diffusion of wiring metal.
摘要翻译：半导体器件包括层间绝缘膜，设置在层间绝缘膜中的布线以及设置在层间绝缘膜上并在布线上的SiN膜。通过FTIR测量的SiN膜的Si-N键的峰位置在845cm -1至860cm -1的范围内。这使得可以抑制作为用于防止布线金属扩散的阻挡绝缘膜的氮化硅膜中的电流泄漏。

5. 发明申请

US20110183518A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110183518A1
公开(公告)日：2011-07-28
申请号：US13013433
申请日：2011-01-25
申请人： Tatsuya USAMI
发明人： Tatsuya USAMI
IPC分类号： H01L21/768
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/31144 , H01L21/76804 , H01L21/76811 , H01L21/76813 , H01L21/76814
摘要： There is provided a method of manufacturing a semiconductor device, which includes forming a TiN film as a hard mask directly on a second p-SiCOH film formed on a substrate, forming an opening passing through the TiN film and the second p-SiCOH film by photolithography and etching, cleaning the inside of the opening, removing the TiN film after cleaning the inside, and forming a second metal film filling the opening directly on the second p-SiCOH film after removing the TiN film.
摘要翻译：提供了一种半导体器件的制造方法，其包括在形成于基板上的第二p-SiCOH膜上直接形成作为硬掩模的TiN膜，形成通过TiN膜和第二p-SiCOH膜的开口光刻和蚀刻，清洁开口内部，清洁内部后去除TiN膜，并且在除去TiN膜之后，直接在第二p-SiCOH膜上形成填充开口的第二金属膜。

6. 发明授权

US07969010B2 Semiconductor device and manufacturing process therefor 有权
标题翻译：半导体器件及其制造工艺
公开(公告)号：US07969010B2
公开(公告)日：2011-06-28
申请号：US11362110
申请日：2006-02-27
申请人： Tatsuya Usami
发明人： Tatsuya Usami
IPC分类号： H01L21/31
CPC分类号： H01L21/7682 , H01L21/76825 , H01L21/76829 , H01L21/76852 , H01L21/76885 , H01L21/76889 , H01L23/5222 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device has a semiconductor substrate, a first interconnect made of a copper-containing metal which is formed over the semiconductor substrate, a conductive first plug formed over the first interconnect and connected to the first interconnect, a Cu silicide layer over the first interconnect in an area other than the area where the first plug is formed, a Cu silicide layer over the first plug, and a first porous MSQ film formed over an area from the side surface of the first interconnect to the side surface of the first plug and covering the side surface of the first interconnect, the upper portion of the first interconnect and the side surface of the first plug.
摘要翻译：半导体器件具有半导体衬底，由半导体衬底上形成的含铜金属制成的第一互连，形成在第一互连上并连接到第一互连的导电第一插塞，第一互连上的铜硅化物层在除了形成第一插头的区域之外的区域中，在第一插头上方的Cu硅化物层和形成在从第一互连的侧表面到第一插头的侧表面的区域上的第一多孔MSQ膜，以及覆盖第一互连的侧表面，第一互连的上部和第一插塞的侧表面。

7. 发明授权

US07674721B2 Semiconductor device, semiconductor wafer, and methods of producing same device and wafer 有权
标题翻译：半导体器件，半导体晶片及其制造方法
公开(公告)号：US07674721B2
公开(公告)日：2010-03-09
申请号：US11797293
申请日：2007-05-02
申请人： Tatsuya Usami
发明人： Tatsuya Usami
IPC分类号： H01L21/316
CPC分类号： H01L21/76897 , H01L21/02134 , H01L21/02137 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02282 , H01L21/3122 , H01L21/3124 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.
摘要翻译：形成多层绝缘膜的方法包括使用第一进料气体形成第一绝缘层，第一绝缘层包括甲基硅倍半氧烷（MSQ），使用第二进料气体形成第二绝缘层，第二绝缘层包括具有Si-H基团的聚硅氧烷化合物，使得第二绝缘层与第一绝缘层的顶部接触，以及形成包含无机材料的第三绝缘层，使得第三绝缘层与第一绝缘层的顶部接触第二绝缘层。

8. 发明授权

US07615498B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07615498B2
公开(公告)日：2009-11-10
申请号：US11655261
申请日：2007-01-19
申请人： Yoichi Sasaki , Koichi Ohto , Noboru Morita , Tatsuya Usami , Hidenobu Miyamoto
发明人： Yoichi Sasaki , Koichi Ohto , Noboru Morita , Tatsuya Usami , Hidenobu Miyamoto
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76835 , H01L21/76801 , H01L21/76807 , H01L21/76832
摘要： A semiconductor device 200 comprises a SiCN film 202 formed on a semiconductor substrate (not shown), a first SiOC film 204 formed thereon, a SiCN film 208 formed thereon, a second SiOC film 210 formed thereon, a SiO2 film 212 and a SiCN film 214 formed thereon. The first SiOC film 204 has a barrier metal layer 216 and via 218 formed therein, and the second SiOC film 210 has a barrier metal layer 220 and wiring metal layer 222 formed therein. Carbon content of the second SiOC film 210 is adjusted larger than that of the first SiOC film 204. This makes it possible to improve adhesiveness of the insulating interlayer with other insulating layers, while keeping a low dielectric constant of the insulating interlayer.
摘要翻译：半导体器件200包括形成在半导体衬底（未示出）上的SiCN膜202，形成在其上的第一SiOC膜204，形成在其上的SiCN膜208，形成在其上的第二SiOC膜210，SiO 2膜212和SiCN膜 214。第一SiOC膜204具有形成在其中的阻挡金属层216和通孔218，并且第二SiOC膜210具有形成在其中的阻挡金属层220和布线金属层222。第二SiOC膜210的碳含量被调节为大于第一SiOC膜204的碳含量。这使得可以在保持绝缘夹层的低介电常数的同时，改善绝缘中间层与其它绝缘层的粘附性。

9. 发明申请

US20090137108A1 Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer 有权
标题翻译：半导体器件，半导体晶片，以及制造相同器件和晶片的方法
公开(公告)号：US20090137108A1
公开(公告)日：2009-05-28
申请号：US12320053
申请日：2009-01-15
申请人： Tatsuya Usami
发明人： Tatsuya Usami
IPC分类号： H01L21/4763 , H01L21/47
CPC分类号： H01L21/76897 , H01L21/02134 , H01L21/02137 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02282 , H01L21/3122 , H01L21/3124 , H01L21/76801 , H01L21/76828 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation layer including a polysiloxane compound having an Si—H group such that the second insulation layer is in contact with a top of the first insulation layer, and forming a third insulation layer including an inorganic material such that the third insulation layer is in contact with a top of the second insulation layer.
摘要翻译：形成多层绝缘膜的方法包括使用第一进料气体形成第一绝缘层，第一绝缘层包括甲基硅倍半氧烷（MSQ），使用第二进料气体形成第二绝缘层，第二绝缘层包括具有Si-H基团的聚硅氧烷化合物，使得第二绝缘层与第一绝缘层的顶部接触，以及形成包含无机材料的第三绝缘层，使得第三绝缘层与第一绝缘层的顶部接触第二绝缘层。

10. 发明授权

US07531891B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07531891B2
公开(公告)日：2009-05-12
申请号：US11006529
申请日：2004-12-08
申请人： Koichi Ohto , Tatsuya Usami , Yoichi Sasaki
发明人： Koichi Ohto , Tatsuya Usami , Yoichi Sasaki
IPC分类号： H01L23/58 , H01L29/00 , H01L21/31
CPC分类号： H01L21/76801 , H01L23/53233 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , Y10S438/931 , H01L2924/00
摘要： A semiconductor device having improved adhesiveness between films composing an interlayer insulating film is presented by providing multilayered films in the interlayer insulating films having film density distribution, in which the film density is gradually changes. A SiOC film is deposited to a thickness of 300 nm via a plasma CVD process, in which a flow rate of trimethylsilane gas is stepwise increased. In this case, the film density of the deposited SiOC film is gradually decreased by stepwise increasing the flow rate of trimethylsilane gas. Since trimethylsilane contains methyl group, trimethylsilane has more bulky molecular structure in comparison with monosilane or the like. Thus, the film density is decreased by increasing the amount of trimethylsilane in the reactant gas.
摘要翻译：通过在具有膜密度分布的层间绝缘膜中提供多层膜，其中膜密度逐渐变化，提供了具有改善的构成层间绝缘膜的膜之间粘附性的半导体器件。通过等离子体CVD工艺沉积厚度为300nm的SiOC膜，其中三甲基硅烷气体的流量逐步增加。在这种情况下，通过逐步增加三甲基硅烷气体的流量，沉积的SiOC膜的膜密度逐渐降低。由于三甲基硅烷含有甲基，因此与甲硅烷等相比，三甲基硅烷具有更大的分子结构。因此，通过增加反应气体中的三甲基硅烷的量来降低膜密度。

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