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    • 5. 发明申请
    • Semiconductor device and method for manufacturing same
    • 半导体装置及其制造方法
    • US20070194396A1
    • 2007-08-23
    • US11707076
    • 2007-02-16
    • Yoji Nomura
    • Yoji Nomura
    • H01L27/14
    • H01L27/14636H01L27/14643H01L27/14687H01L27/14689H01L2924/0002H01L2924/00
    • The absorption of moisture from a wall surface of an apertured part formed in an interlayer insulating film in accordance with a light-receiving part of a light detector is minimized and deterioration of wiring in the interlayer insulating film is prevented. A position that corresponds to a light-receiving part 52 of a wiring-structure layer 90 obtained by layering an Al layer and an interlayer insulating film composed of SOG or another material is etched, and an apertured part 120 is formed. A silicon nitride film 130 is then deposited on a side-wall surface and bottom surface of the apertured part 120 via CVD. The silicon nitride layer 130 prevents moisture from infiltrating the wiring-structure layer 90.
    • 根据光检测器的光接收部分,在形成在层间绝缘膜中的有孔部分的壁表面上的水分吸收最小化,从而防止了层间绝缘膜中的布线的劣化。 蚀刻对应于通过层叠Al层而获得的布线结构层90的光接收部分52和由SOG或其它材料构成的层间绝缘膜的位置,形成有孔部分120。 然后通过CVD将氮化硅膜130沉积在有孔部分120的侧壁表面和底表面上。 氮化硅层130防止水分渗透布线结构层90。
    • 10. 发明授权
    • Optical sensor with improved planarization
    • 具有改进平面化的光学传感器
    • US07365381B2
    • 2008-04-29
    • US11600771
    • 2006-11-17
    • Akihiro HasegawaYoji Nomura
    • Akihiro HasegawaYoji Nomura
    • H01L31/113
    • H01L27/14632H01L2924/0002H01L2924/00
    • In a photodetector where a circuit section, in which an interconnection is formed, is formed adjacent to a light receiving section, photo sensitivity within a light receiving surface is prevented from being non-uniform due to an interlayer insulating film at a periphery of the light receiving section being increased in thickness. In a circuit region, a buffer region is disposed adjacent to a light receiving section. In the buffer region, in order to reduce irregularity of an interlayer insulating film, a density of planarizing pads disposed between the interconnections is gradually reduced from a standard value in a region as it approaches the light receiving section.
    • 在与光接收部相邻地形成有互连的电路部的光电检测器中,由于在光的周围由于层间绝缘膜而防止受光面内的光敏性不均匀 接收部分的厚度增加。 在电路区域中,缓冲区域邻近光接收部分设置。 在缓冲区域中,为了减少层间绝缘膜的不规则性,布置在互连之间的平坦化焊盘的密度随着接近光接收部分的区域中的标准值而逐渐减小。