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1. 发明授权

US09273394B2 Plasma processing apparatus and diagnosis method thereof 有权
标题翻译：等离子体处理装置及其诊断方法
公开(公告)号：US09273394B2
公开(公告)日：2016-03-01
申请号：US13612919
申请日：2012-09-13
申请人： Masahiro Nagatani , Yoshifumi Ogawa
发明人： Masahiro Nagatani , Yoshifumi Ogawa
IPC分类号： G01F7/00 , B05C11/00 , C23C16/455 , C23C16/52 , G05D7/06
CPC分类号： C23C16/45561 , C23C16/52 , G05D7/0658
摘要： A plasma processing apparatus includes at least three gas supply lines connected to a process chamber in parallel to allow a gas to flow therethrough, and at least three flow-rate controllers provided on the gas supply lines to detect the flow rate of the gas flowing through each of the flow-rate controllers to control the flow rate to a set value and a diagnosis method. The apparatus has a function of splitting and supplying a gas controlled to a predetermined flow rate by the third flow-rate controller, to a first flow-rate controller for the smallest detectable range of the three flow-rate controllers and to a second flow-rate controller, in order to test the operation of the control of the flow rate of the first flow-rate controller, based on the value obtained from the flow rate of the gas flowing through the second flow-rate controller and the predetermined flow rate.
摘要翻译：等离子体处理装置包括至少三个气体供应管线，其平行连接到处理室以允许气体流过其中，并且至少三个流量控制器设置在气体供应管线上以检测流过的气体的流量每个流量控制器将流量控制到设定值和诊断方法。该装置具有将由第三流量控制器控制到预定流量的气体分流并供给到三个流量控制器的最小可检测范围的第一流量控制器和第二流量控制器的功能，速率控制器，以便基于从流过第二流量控制器的气体的流量获得的值和预定的流量来测试第一流量控制器的流量的控制的操作。

2. 发明申请

US20140041804A1 PLASMA PROCESSING APPARATUS AND DIAGNOSIS METHOD THEREOF 有权
标题翻译：等离子体加工设备及其诊断方法
公开(公告)号：US20140041804A1
公开(公告)日：2014-02-13
申请号：US13612919
申请日：2012-09-13
申请人： Masahiro NAGATANI , Yoshifumi Ogawa
发明人： Masahiro NAGATANI , Yoshifumi Ogawa
IPC分类号： G01F7/00 , B05C11/00
CPC分类号： C23C16/45561 , C23C16/52 , G05D7/0658
摘要： A plasma processing apparatus includes at least three gas supply lines connected to a process chamber in parallel to allow a gas to flow therethrough, and at least three flow-rate controllers provided on the gas supply lines to detect the flow rate of the gas flowing through each of the flow-rate controllers to control the flow rate to a set value and a diagnosis method. The apparatus has a function of splitting and supplying a gas controlled to a predetermined flow rate by the third flow-rate controller, to a first flow-rate controller for the smallest detectable range of the three flow-rate controllers and to a second flow-rate controller, in order to test the operation of the control of the flow rate of the first flow-rate controller, based on the value obtained from the flow rate of the gas flowing through the second flow-rate controller and the predetermined flow rate.
摘要翻译：等离子体处理装置包括至少三个气体供应管线，其平行连接到处理室以允许气体流过其中，并且至少三个流量控制器设置在气体供应管线上以检测流过的气体的流量每个流量控制器将流量控制到设定值和诊断方法。该装置具有将由第三流量控制器控制到预定流量的气体分流并供给到三个流量控制器的最小可检测范围的第一流量控制器和第二流量控制器的功能，速率控制器，以便基于从流过第二流量控制器的气体的流量获得的值和预定的流量来测试第一流量控制器的流量的控制的操作。

3. 发明授权

US5985035A Method of holding substrate and substrate holding system 失效
标题翻译：保持基板和基板保持系统的方法
公开(公告)号：US5985035A
公开(公告)日：1999-11-16
申请号：US109033
申请日：1998-07-02
申请人： Naoyuki Tamura , Kazue Takahashi , Youichi Ito , Yoshifumi Ogawa , Hiroyuki Shichida , Tsunehiko Tsubone
发明人： Naoyuki Tamura , Kazue Takahashi , Youichi Ito , Yoshifumi Ogawa , Hiroyuki Shichida , Tsunehiko Tsubone
IPC分类号： H01L21/00 , H01L21/68 , H01L21/683 , C23C16/00 , H05H1/00
CPC分类号： H01L21/6835 , H01L21/67109 , H01L21/6831 , H01L21/6833 , H01L2924/3025 , Y10T279/23
摘要： In a method of holding a substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate is exposed to a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed at a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.
摘要翻译：在保持基板和基板保持系统的方法中，可以减少基板的背面上的异物的量，并且只有少量的异物从安装台传递到基板。为此，基板保持系统具有环形防漏表面，在对应于基板的周边的样品台上提供平滑的支撑表面，多个接触保持部分抵靠在样品台上的基板上，与基板周边相对应的位置和与基板中心相对应的位置，以及静电吸引装置，用于通过使基板的背面与环状的防漏表面接触而固定基板，以及接触保持部。将基板暴露于环状防漏表面处的冷却表面和位于环形防漏表面内的位置处的接触保持部。基板的后表面和冷却表面在剩余区域的大部分中彼此不接触。

4. 发明授权

US5792304A Method of holding substrate and substrate holding system 失效
标题翻译：保持基板和基板保持系统的方法
公开(公告)号：US5792304A
公开(公告)日：1998-08-11
申请号：US307238
申请日：1994-09-16
申请人： Naoyuki Tamura , Kazue Takahashi , Youichi Ito , Yoshifumi Ogawa , Hiroyuki Shichida , Tsunehiko Tsubone
发明人： Naoyuki Tamura , Kazue Takahashi , Youichi Ito , Yoshifumi Ogawa , Hiroyuki Shichida , Tsunehiko Tsubone
IPC分类号： H01L21/00 , H01L21/68 , H01L21/683 , H05H1/00
CPC分类号： H01L21/6835 , H01L21/67109 , H01L21/6831 , H01L21/6833 , H01L2924/3025 , Y10T279/23
摘要： In a method of a holding substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased, and only a small amount of foreign substances transferred from a mounting table to the substrate. For this purpose, the substrate holding system has a ring-shaped leakage-proof surface providing a smooth support surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions which bear against the substrate on the specimen table between the corresponding position to the periphery of the substrate and the corresponding position to the center of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate is exposed to a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed at a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.
摘要翻译：在保持基板和基板保持系统的方法中，可以减少基板的背面上的异物量，并且只有少量的异物从安装台传递到基板。为此，基板保持系统具有环形防漏表面，在对应于基板的周边的样品台上提供平滑的支撑表面，多个接触保持部分抵靠在样品台上的基板上，与基板周边相对应的位置和与基板中心相对应的位置，以及静电吸引装置，用于通过使基板的背面与环状的防漏表面接触而固定基板，以及接触保持部。将基板暴露于环状防漏表面处的冷却表面和位于环形防漏表面内的位置处的接触保持部。基板的后表面和冷却表面在剩余区域的大部分中彼此不接触。

5. 发明授权

US5433789A Methods and apparatus for generating plasma, and semiconductor processing methods using mode restricted microwaves 失效
标题翻译：用于产生等离子体的方法和装置以及使用模式限制性微波的半导体处理方法
公开(公告)号：US5433789A
公开(公告)日：1995-07-18
申请号：US010051
申请日：1993-01-28
申请人： Yutaka Kakehi , Yoshinao Kawasaki , Keizo Suzuki , Kazuo Nojiri , Hiromichi Enami , Tetsunori Kaji , Seiichi Watanabe , Yoshifumi Ogawa
发明人： Yutaka Kakehi , Yoshinao Kawasaki , Keizo Suzuki , Kazuo Nojiri , Hiromichi Enami , Tetsunori Kaji , Seiichi Watanabe , Yoshifumi Ogawa
IPC分类号： C23C16/511 , H01J37/32 , C23C16/30 , H05H1/46
CPC分类号： H01J37/32229 , C23C16/511 , H01J37/32192 , H01J37/32266 , H01J37/32284
摘要： A plasma processing apparatus has a waveguide along which microwaves are propagated from a microwave generator to a plasma-forming region in a low-pressure processing chamber. The waveguide has a large cross-sectional area, to enable a large region of plasma to be achieved. Uniformity and stability of the plasma are improved by a mode restrictor which inhibits mixing of propagation modes which is otherwise liable to occur in a wide waveguide. The mode restrictor consists of electrically-conductive dividers which divide the waveguide cross-section into an array of sub-guides before the plasma-forming region.
摘要翻译：等离子体处理装置具有微波从微波发生器传播到低压处理室中的等离子体形成区域的波导。波导具有大的横截面面积，以实现等离子体的大区域。等离子体的均匀性和稳定性通过抑制混合传播模式的模式限制器来改善，否则传播模式容易发生在宽波导中。模式限制器由导电分配器组成，其在等离子体形成区域之前将波导横截面分成子导轨阵列。

6. 发明授权

US4664767A Plasma treating method and apparatus therefor 失效
标题翻译：等离子体处理方法及其设备
公开(公告)号：US4664767A
公开(公告)日：1987-05-12
申请号：US741526
申请日：1985-06-05
申请人： Katsuyoshi Kudo , Katsuaki Nagatomo , Hideji Yamamoto , Katsuyasu Nishita , Yoshifumi Ogawa
发明人： Katsuyoshi Kudo , Katsuaki Nagatomo , Hideji Yamamoto , Katsuyasu Nishita , Yoshifumi Ogawa
IPC分类号： C23F1/00 , B01J19/08 , B29C59/14 , H01J37/32 , B05D3/14
CPC分类号： H01J37/32935 , B01J19/088 , B29C59/14 , B29C2037/90
摘要： Herein disclosed are a plasma treating method and an apparatus therefor. The plasma treating method comprises: the step of monitoring the energies of plasmas corresponding to the faces of a plurality of samples to be treated; the step of adjusting to equalize the energies of said plasmas on the basis of the monitored values; and the step simultaneously treating said samples with the plasmas having said equalized energies. The plasma treating apparatus comprises: a plurality of sample electrodes disposed independently of one another in positions opposed to an opposed electrode in a treating chamber evacuated to be supplied with a treating gas; power supply means for applying and adjusting electric power to said sample electrodes; and monitor means for monitoring the energies of plasmas to be generated between said opposed electrode and said sample electrodes. The electric power to be applied independently of one another from a power supply to the independently formed plural sample electrodes are adjusted such that the energies of the plasmas to be generated between the opposed electrode and the sample electrodes are equalized, whereby the energy of the plasma corresponding to the respective treated faces of the plural samples are equalized so that the uniformity of the treatment of the respective faces of the plural samples to be simultaneously treated can be improved.
摘要翻译：这里公开了一种等离子体处理方法及其装置。等离子体处理方法包括：监测与待处理的多个样品的面对应的等离子体的能量的步骤; 基于所监测的值调整所述等离子体的能量的步骤; 以及用具有所述均衡能的等离子体同时处理所述样品的步骤。等离子体处理装置包括：多个样品电极，彼此独立地设置在处理室中的与相对电极相对的位置，所述处理室被排出以供应处理气体; 用于对所述样品电极施加和调整电力的电源装置; 以及用于监测在所述相对电极和所述样品电极之间产生的等离子体能量的监视装置。调节从电源向独立形成的多个样品电极彼此独立施加的电力，使得在相对电极和样品电极之间产生的等离子体的能量相等，由此等离子体的能量对应于多个样品的各个处理面相对应，可以提高要同时处理的多个样品的各个面的处理的均匀性。

7. 发明授权

US4609426A Method and apparatus for monitoring etching 失效
标题翻译：用于监测蚀刻的方法和装置
公开(公告)号：US4609426A
公开(公告)日：1986-09-02
申请号：US736769
申请日：1985-05-22
申请人： Yoshifumi Ogawa , Masaharu Nishiumi , Yoshie Tanaka , Sadayuki Okudaira , Shigeru Nishimatsu
发明人： Yoshifumi Ogawa , Masaharu Nishiumi , Yoshie Tanaka , Sadayuki Okudaira , Shigeru Nishimatsu
IPC分类号： H01L21/302 , G01N21/62 , H01J37/32 , H01L21/145 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01J37/32935 , G01N21/62 , G01N2201/122
摘要： This invention relates to a method and apparatus for monitoring etching. The monitor method comprises the steps of regulating a gas pressure inside a treating chamber, in which a sample is being etched by a dry etching process, to a pressure at which a emission line spectrum can be clarified, converting the gas whose pressure is regulated to plasma, and monitoring the etching state of the sample from the change of the intensity of the emission line spectrum with time. The monitor apparatus comprises exhaust means for discharging a gas from a treating chamber in which a sample is being etched by a dry etching process, plasma means for introducing the gas discharged from the treating chamber and converting it plasma, pressure regulation means for regulating the pressure of the gas at the plasma means to a pressure at which a emission line spectrum can be clarified, and spectrum detection means for detecting the emission line spectrum of the plasma at the plasma means, and detecting the change of the intensity of the detected emission line spectrum with time.
摘要翻译：本发明涉及一种用于监测蚀刻的方法和装置。监测方法包括以下步骤：将通过干蚀刻工艺蚀刻样品的处理室内的气体压力调节到可以澄清发射谱线谱的压力，将压力调节的气体转化为等离子体，并且随着时间的推移从发射线谱的强度的变化监测样品的蚀刻状态。监视器装置包括排气装置，用于通过干蚀刻处理从其中正在蚀刻样品的处理室排出气体，用于引入从处理室排出的气体并将其转换成等离子体的等离子体装置，用于调节压力的压力调节装置在等离子体装置处的等离子体的发射线谱的检测装置，以及用于检测等离子体装置上的等离子体的发射谱线光谱的光谱检测装置，以及检测发射线的强度的变化随着时间的推移。

8. 发明授权

US4559100A Microwave plasma etching apparatus 失效
标题翻译：微波等离子体蚀刻装置
公开(公告)号：US4559100A
公开(公告)日：1985-12-17
申请号：US684299
申请日：1984-12-20
申请人： Ken Ninomiya , Shigeru Nishimatsu , Keizo Suzuki , Sadayuki Okudaira , Yoshifumi Ogawa
发明人： Ken Ninomiya , Shigeru Nishimatsu , Keizo Suzuki , Sadayuki Okudaira , Yoshifumi Ogawa
IPC分类号： C23F4/00 , C23F1/08 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/306 , B44C1/22 , C03C15/00
CPC分类号： H01J37/32623 , H01J37/32192 , H01J37/3266
摘要： A microwave plasma etching apparatus comprises: a discharge tube into which a discharge gas is supplied and which forms a discharge region; means for generating a magnetic field in the discharge region; means for bringing a microwave into the discharge region; and a stage for holding a material. In the present invention, the sample exists in the discharge region. On one hand, an area of a passage for draining particles to the outside from the discharge region is 5/16 or less of an area of the discharge region. For this purpose, for example, a diameter of the sample stage is 3/4 or more of a diameter of the discharge region.
摘要翻译：微波等离子体蚀刻装置包括：放电管，放电气体被供给到其中并形成放电区域; 用于在放电区域产生磁场的装置; 用于将微波带入放电区域的装置; 和一个拿着材料的舞台。在本发明中，样品存在于放电区域中。一方面，从排出区域将颗粒排出到外部的通道区域是排出区域的面积的5/16以下。为此，例如，样品台的直径为放电区域的直径的3/4以上。

9. 发明授权

US09245780B2 Vacuum processing apparatus and operating method of the same 有权
标题翻译：真空处理装置及其操作方法
公开(公告)号：US09245780B2
公开(公告)日：2016-01-26
申请号：US13592408
申请日：2012-08-23
申请人： Takahiro Shimomura , Yoshifumi Ogawa , Susumu Tauchi
发明人： Takahiro Shimomura , Yoshifumi Ogawa , Susumu Tauchi
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67161 , H01L21/67184
摘要： A vacuum processing apparatus includes a row of containers of vacuum transfer chambers connected to each other behind a lock chamber, a wafer being transferred through depressurized inside of the row of the containers of the vacuum transfer containers, an intermediate chamber disposed between the containers of the vacuum transfer chambers, a plurality of processing units including processing containers respectively connected to left or right side walls of the containers of the vacuum transfer chambers and the wafer is processed therein, and a bypass chamber which constitutes a bypass path connecting the processing units, where only either the wafer which is being transferred from the lock chamber toward one of the processing units or the wafer which was processed in one of the processing units and is being transferred toward the lock chamber is transferred through the containers of the vacuum transfer chambers.
摘要翻译：真空处理装置包括一排在锁室后面彼此连接的真空传送室的容器，通过真空传送容器的容器排中的减压内部传送的晶片，设置在真空传送容器的容器之间的中间室在真空传送室中处理多个处理单元，包括分别连接到真空传送室的容器的左侧壁或右侧壁的处理容器和晶片，以及构成连接处理单元的旁路的旁路室，其中，只有从锁定室转移到处理单元之一的晶片或在一个处理单元中被处理并且被转移到锁定室的晶片被传送通过真空传送室的容器。

10. 发明授权

US06544379B2 Method of holding substrate and substrate holding system 失效
公开(公告)号：US06544379B2
公开(公告)日：2003-04-08
申请号：US09778780
申请日：2001-02-08
申请人： Naoyuki Tamura , Kazue Takahashi , Youichi Ito , Yoshifumi Ogawa , Hiroyuki Shichida , Tsunehiko Tsubone
发明人： Naoyuki Tamura , Kazue Takahashi , Youichi Ito , Yoshifumi Ogawa , Hiroyuki Shichida , Tsunehiko Tsubone
IPC分类号： H05H100
CPC分类号： H01L21/6835 , H01L21/67109 , H01L21/6831 , H01L21/6833 , H01L2924/3025 , Y10T279/23
摘要： A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

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