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    • 9. 发明授权
    • Method of manufacturing vertical light emitting diode with dual surface pattern to improve light extraction
    • 制造具有双表面图案的垂直发光二极管的方法,以改善光提取
    • US08455282B2
    • 2013-06-04
    • US13162254
    • 2011-06-16
    • Ki Sung KimGi Bum KimTae Hun KimYoung Chul ShinYoung Sun Kim
    • Ki Sung KimGi Bum KimTae Hun KimYoung Chul ShinYoung Sun Kim
    • H01L21/00
    • H01L33/22H01L33/0066H01L33/0075H01L33/0079H01L33/20H01L2933/0025H01L2933/0091
    • A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.
    • 公开了一种半导体发光二极管(LED)及其制造方法。 制造半导体发光二极管(LED)的方法包括:在具有突起和凹陷的基板上形成包括第一导电半导体层,有源层和第二导电半导体层的发光结构; 从所述发光结构去除所述衬底以暴露对应于所述突起和凹陷的第一凹凸部分; 在第一凹凸部上形成保护层; 去除所述保护层的一部分以暴露所述第一凹凸部的凸部; 以及在所述第一凹凸部的所述凸部上形成第二凹凸部。 半导体发光二极管(LED)包括:包括第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构; 形成在所述发光结构上的第一凹凸部,在其凸部具有第二凹凸部; 以及填充所述第一凹凸部的凹部的保护层。