专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09299894B2 Wavelength converting substance, wavelength converting gel and light emitting device 有权
标题翻译：波长转换物质，波长转换凝胶和发光器件
公开(公告)号：US09299894B2
公开(公告)日：2016-03-29
申请号：US13904030
申请日：2013-05-29
申请人： Yun-Li Li , Yu-Chu Li , Cheng-Yen Chen
发明人： Yun-Li Li , Yu-Chu Li , Cheng-Yen Chen
IPC分类号： H01L33/50 , G02F1/355 , C09K11/70
CPC分类号： H01L33/502 , C09K11/706 , G02F1/3556 , H01L33/501 , H01L33/504 , Y02B20/181
摘要： A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.
摘要翻译：波长转换物质由半导体材料制成。波长转换物质适用于吸收波长范围在300纳米到490纳米之间的激发光，并将激发光转换成波长范围在450纳米到750纳米之间的发射光。

2. 发明授权

US08766307B2 Light emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：US08766307B2
公开(公告)日：2014-07-01
申请号：US13778161
申请日：2013-02-27
申请人： Yen-Lin Lai , Shen-Jie Wang , Yu-Chu Li , Jyun-De Wu , Ching-Liang Lin , Kuan-Yung Liao
发明人： Yen-Lin Lai , Shen-Jie Wang , Yu-Chu Li , Jyun-De Wu , Ching-Liang Lin , Kuan-Yung Liao
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/20 , H01L2933/0091
摘要： A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.
摘要翻译：发光二极管器件包括外延衬底，至少一个钝化结构，至少一个空穴，半导体层，第一类型掺杂半导体层，发光层和第二类型掺杂半导体层。钝化结构设置在外延衬底上并具有外表面。空隙位于钝化结构处，并且至少覆盖钝化结构的外表面的50％。半导体层设置在外延衬底上并封装钝化结构和空隙。第一类掺杂半导体层设置在半导体层上。发光层设置在第一型掺杂半导体层上。第二种掺杂半导体层设置在发光层上。

3. 发明授权

US08659045B2 Light emitting device and methods for forming the same 有权
标题翻译：发光装置及其形成方法
公开(公告)号：US08659045B2
公开(公告)日：2014-02-25
申请号：US11848458
申请日：2007-08-31
申请人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
发明人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
摘要翻译：本发明提供了一种发光器件，其包括透明衬底，在透明衬底上具有第一部分和第二部分的外延堆叠结构，在外延堆叠结构的第一部分上的II / V族化合物接触层， II / V族化合物接触层上的氮化物结晶层，覆盖氮化物结晶层的透明导电层，透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极结构和结构上与外延堆叠结构的第一部分上的结构分离。氮化物结晶层可以有助于增加发光器件的外部量子效率，从而也可以提高发光器件的发光效率。

4. 发明申请

US20130037796A1 Light-Emitting Device and Method for Manufacturing the Same 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20130037796A1
公开(公告)日：2013-02-14
申请号：US13568399
申请日：2012-08-07
申请人： Jyun-De Wu , Yu-Chu Li
发明人： Jyun-De Wu , Yu-Chu Li
IPC分类号： H01L33/02
CPC分类号： H01L33/02 , H01L33/42
摘要： A light-emitting device includes a first cladding layer, a light-emitting layer, a second cladding layer, an epitaxial structure including an indium-containing oxide, and an electrode unit for supplying external electricity, The electrode unit includes a first electrode disposed to be electrically connected to the first cladding layer, and a second electrode disposed above the epitaxial structure to be electrically connected to the second cladding layer through the epitaxial structure such that the external electricity is permitted to be transmitted to the light-emitting layer through the first and second electrodes. A method for manufacturing the light-emitting device is also disclosed.
摘要翻译：发光装置包括第一包层，发光层，第二包层，包含含铟氧化物的外延结构和用于供给外部电力的电极单元。电极单元包括：第一电极，其设置成电连接到第一包层，以及第二电极，设置在外延结构上方，以通过外延结构电连接到第二包层，使得外部电被允许通过第一覆层传输到发光层和第二电极。还公开了一种制造发光器件的方法。

5. 发明申请

US20090008626A1 Optoelectronic device 审中-公开
标题翻译：光电器件
公开(公告)号：US20090008626A1
公开(公告)日：2009-01-08
申请号：US12000610
申请日：2007-12-14
申请人： Tzong-Liang Tsai , Yu-Chu Li
发明人： Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L29/06 , H01L33/00
CPC分类号： H01L33/24 , H01L33/007 , H01L33/02 , H01L33/26
摘要： The present invention provides an optoelectronic device which includes a first electrode, a substrate on the first electrode; a buffer layer on the substrate, in which the buffer layer includes a first gallium nitride based compound layer on the substrate, a second gallium nitride based compound layer, and a II-V group compound layer between the first gallium nitride based compound layer and the second gallium nitride based compound layer; a first semiconductor conductive layer on the buffer layer; an active layer on the first semiconductor conductive layer, in which the active layer is an uneven Multi-Quantum Well; a semiconductor conductive layer on the active layer; a transparent layer on the second semiconductor conductive layer; and a second electrode on the transparent layer.
摘要翻译：本发明提供一种光电器件，其包括第一电极，第一电极上的衬底; 所述衬底上的缓冲层，其中所述缓冲层在所述衬底上包括第一氮化镓基化合物层，所述第二氮化镓基化合物层和所述第一氮化镓基化合物层和所述第一氮化镓基化合物层之间的II-V族化合物层第二氮化镓基化合物层; 在缓冲层上的第一半导体导电层; 在第一半导体导电层上的有源层，其中有源层是不均匀的多量子阱; 有源层上的半导体导电层; 第二半导体层上的透明层; 和透明层上的第二电极。

6. 发明申请

US20210151341A1 MICRO-COMPONENT TRANSFER HEAD, MICRO-COMPONENT TRANSFER DEVICE, AND MICRO-COMPONENT DISPLAY 有权
公开(公告)号：US20210151341A1
公开(公告)日：2021-05-20
申请号：US15931621
申请日：2020-05-14
申请人： Yu-Chu LI , Pei-Hsin CHEN , Yi-Chun SHIH , Yi-Ching CHEN
发明人： Yu-Chu LI , Pei-Hsin CHEN , Yi-Chun SHIH , Yi-Ching CHEN
IPC分类号： H01L21/683 , H01L23/00
摘要： Herein disclosed are a micro-component transfer head, a micro-component transfer device, and a micro-component display. Said micro-component transfer head comprises a carrying surface that corresponds to a micro-component extraction area. Said extraction area conforms with a first geometric object, which comprises at least an acute angle. A second geometric object comprises at least a right angle and is constituted of n copies of the first geometric object, n being an integer greater than 1. The shape of the first geometric object differs from that of the second.

7. 发明授权

US07659557B2 Semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07659557B2
公开(公告)日：2010-02-09
申请号：US11798873
申请日：2007-05-17
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译：本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

8. 发明申请

US20080023709A1 Semiconductor light-emitting device and method of fabricating the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080023709A1
公开(公告)日：2008-01-31
申请号：US11798873
申请日：2007-05-17
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides a semiconductor light-emitting device with II-V group (or II-IV-V group) compound contact layer and a method of fabricating the same. The semiconductor light-emitting device according to a preferred embodiment of the invention includes a substrate, a first conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second conductive type semiconductor material layer, a II-V group (or II-IV-V group) compound contact layer, a transparent conductive layer, and a second electrode. The existence of the II-V group (or II-IV-V group) compound contact layer improves the ohmic contact between the second conductive type semiconductor material layer and the transparent conductive layer.
摘要翻译：本发明提供具有II-V族（或II-IV-V族）化合物接触层的半导体发光器件及其制造方法。根据本发明的优选实施例的半导体发光器件包括基板，第一导电型半导体材料层，发光层，第一电极，第二导电型半导体材料层，II-V族（或II-IV-V族）化合物接触层，透明导电层和第二电极。 II-V族（或II-IV-V族）化合物接触层的存在改善了第二导电类型半导体材料层和透明导电层之间的欧姆接触。

9. 发明申请

US20150179874A1 LIGHT EMITTING DIODE STRUCTURE 审中-公开
标题翻译：发光二极管结构
公开(公告)号：US20150179874A1
公开(公告)日：2015-06-25
申请号：US14257012
申请日：2014-04-21
申请人： Yu-Chu Li
发明人： Yu-Chu Li
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/02
摘要： A light emitting diode (LED) structure includes a substrate, a N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer. The N-type semiconductor layer is disposed on the substrate. The light emitting layer is adapted to emit a light with dominant wavelength between 365 nm and 490 nm and disposed on the N-type semiconductor layer. The P-type semiconductor layer is disposed on the blue light emitting layer and includes a P—AlGaN layer. A thickness of the P—AlGaN layer is more than 85% a thickness of the P-type semiconductor layer.
摘要翻译：发光二极管（LED）结构包括衬底，N型半导体层，发光层和P型半导体层。 N型半导体层设置在基板上。发光层适于发射主波长在365nm和490nm之间的光并且设置在N型半导体层上。 P型半导体层设置在蓝色发光层上，并且包括P-AlGaN层。 P型AlGaN层的厚度大于P型半导体层的厚度的85％以上。

10. 发明申请

US20140131751A1 WAVELENGTH CONVERTING SUBSTANCE, WAVELENGTH CONVERTING GEL AND LIGHT EMITTING DEVICE 有权
标题翻译：波长转换物质，波长转换凝胶和发光装置
公开(公告)号：US20140131751A1
公开(公告)日：2014-05-15
申请号：US13904030
申请日：2013-05-29
申请人： Yun-Li Li , Yu-Chu Li , Cheng-Yen Chen
发明人： Yun-Li Li , Yu-Chu Li , Cheng-Yen Chen
IPC分类号： H01L33/50
CPC分类号： H01L33/502 , C09K11/706 , G02F1/3556 , H01L33/501 , H01L33/504 , Y02B20/181
摘要： A wavelength converting substance is made of semiconductor material. The wavelength converting substance is suitable for absorbing an exciting light with the wavelength range falling between 300 nanometers and 490 nanometers and converting the exciting light to an emitted light with wavelength range falling between 450 nanometers and 750 nanometers.
摘要翻译：波长转换物质由半导体材料制成。波长转换物质适用于吸收波长范围在300纳米到490纳米之间的激发光，并将激发光转换成波长范围在450纳米到750纳米之间的发射光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式