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1. 发明授权

US09082961B2 Method of manufacturing multilayer film 有权
标题翻译：多层膜的制造方法
公开(公告)号：US09082961B2
公开(公告)日：2015-07-14
申请号：US13226960
申请日：2011-09-07
申请人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L43/12 , H01L29/82
CPC分类号： H01L43/12 , H01L29/82
摘要： According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.
摘要翻译：根据一个实施例，一种制造多层膜的方法，该方法包括：形成第一层，在第一层上形成第二层，以及将第一层和第二层之一的晶体信息转录到第一层中的另一层并且通过对第二层执行GCIB照射来产生第二层。

2. 发明授权

US08716817B2 Magnetic memory element and nonvolatile memory device 有权
标题翻译：磁存储元件和非易失性存储器件
公开(公告)号：US08716817B2
公开(公告)日：2014-05-06
申请号：US13416724
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人： Daisuke Saida , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。第二和第三铁磁层的磁化是可变的。第一和第四铁磁层的磁化在垂直于层表面的方向固定。当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。

3. 发明授权

US08710605B2 Magnetic memory and method of manufacturing the same 有权
标题翻译：磁存储器及其制造方法
公开(公告)号：US08710605B2
公开(公告)日：2014-04-29
申请号：US13231894
申请日：2011-09-13
申请人： Shigeki Takahashi , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Saori Kashiwada , Minoru Amano , Hiroaki Yoda
发明人： Shigeki Takahashi , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Saori Kashiwada , Minoru Amano , Hiroaki Yoda
IPC分类号： H01L29/72
CPC分类号： H01L43/12 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region.
摘要翻译：根据实施例的磁存储器包括：包括作为存储元件的磁阻元件的至少一个存储单元，以及激励磁阻元件的第一和第二电极。磁阻元件包括：具有与膜平面垂直的可变磁化方向的第一磁性层; 在第一磁性层上的隧道阻挡层; 以及隧道势垒层上的第二磁性层，并且具有与膜平面垂直的固定的磁化方向。所述第一磁性层包括：第一区域; 以及围绕第一区域的第一区域外的第二区域，并且具有比第一区域小的垂直磁各向异性能量。第二磁性层包括：第三区域; 以及第三区域外的第四区域，并且具有比第三区域小的垂直磁各向异性能量。

4. 发明授权

US08419412B2 Nano-imprint mold and substrate with uneven patterns manufactured by using the mold 有权
标题翻译：纳米压印模具和使用模具制造的不均匀图案的基板
公开(公告)号：US08419412B2
公开(公告)日：2013-04-16
申请号：US13422897
申请日：2012-03-16
申请人： Yuichi Ohsawa , Junichi Ito , Tomotaka Ariga , Yoshinari Kurosaki , Saori Kashiwada
发明人： Yuichi Ohsawa , Junichi Ito , Tomotaka Ariga , Yoshinari Kurosaki , Saori Kashiwada
IPC分类号： B29C59/00
CPC分类号： B29C59/022 , B29C2059/023 , Y10T428/24355
摘要： According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.
摘要翻译：根据一个实施例，纳米压印模具包括形成在基底层上的多对第一和第二突起，其中每一个沿着相同的直线形成。每个突起具有顶表面和四个侧表面。第一和第二突起彼此镜像对称。第一突起的第一侧表面和第二突起的第二侧表面彼此面对。第一侧表面或第二侧表面与基层的主表面之间的第一角度不小于85°且不大于90°。第一突起中的第三侧表面或第二突起中的第四侧表面与基底层的主表面之间的第二角度不小于70°且不大于88°。第一角度大于第二角度。

5. 发明申请

US20130029431A1 METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20130029431A1
公开(公告)日：2013-01-31
申请号：US13534673
申请日：2012-06-27
申请人： Shigeki TAKAHASHI , Kyoichi SUGURO , Junichi ITO , Yuichi OHSAWA , Hiroaki YODA
发明人： Shigeki TAKAHASHI , Kyoichi SUGURO , Junichi ITO , Yuichi OHSAWA , Hiroaki YODA
IPC分类号： H01L21/306
CPC分类号： H01L43/12
摘要： According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.
摘要翻译：根据一个实施例，公开了一种用于制造包括多个存储单元的非易失性存储器件的方法。多个存储单元中的每一个包括基底层，其包括第一电极，设置在基底层上的磁性隧道结器件和设置在磁性隧道结装置上的第二电极。磁隧道结装置包括第一磁性层，设置在第一磁性层上的隧道势垒层，以及设置在隧道势垒层上的第二磁性层。该方法可以包括通过将气体簇照射到第二磁性层的表面的一部分或第一磁性层的表面的一部分上来蚀刻第二磁性层的一部分和第一磁性层的一部分。

6. 发明申请

US20130004724A1 MASTER FOR PRODUCING STAMPER 有权
标题翻译：主要生产冲压器
公开(公告)号：US20130004724A1
公开(公告)日：2013-01-03
申请号：US13613667
申请日：2012-09-13
申请人： Saori Kashiwada , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Yoshiyuki Kamata
发明人： Saori Kashiwada , Yuichi Ohsawa , Junichi Ito , Chikayoshi Kamata , Yoshiyuki Kamata
IPC分类号： B32B3/30 , B32B9/04 , B32B17/06
CPC分类号： G11B7/261 , G11B7/263 , Y10T428/24479 , Y10T428/2457 , Y10T428/24612
摘要： In one embodiment, there is provided a master for producing a stamper. The master includes: a substrate made of a first material and comprising a first surface, wherein the first surface of the substrate is formed with a groove; a first layer made of a second material and formed in the groove, wherein the second material is different from the first material, and wherein a surface of the first layer is substantially flush with the first surface of substrate; and a projection portion formed on at least one of the first surface of the substrate and the surface of the first layer. The first material is silicon and the second material is selected from silicon oxide, aluminum oxide, titanium oxide, and glass.
摘要翻译：在一个实施例中，提供了一种用于制造压模的主机。主机包括：由第一材料制成并包括第一表面的基板，其中基板的第一表面形成有凹槽; 由第二材料制成并形成在所述凹槽中的第一层，其中所述第二材料与所述第一材料不同，并且其中所述第一层的表面基本上与所述基板的第一表面齐平; 以及形成在所述基板的第一表面和所述第一层的表面中的至少一个上的突出部。第一种材料是硅，第二种材料选自氧化硅，氧化铝，氧化钛和玻璃。

7. 发明申请

US20120241827A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241827A1
公开(公告)日：2012-09-27
申请号：US13210678
申请日：2011-08-16
申请人： Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
发明人： Tadaomi DAIBOU , Minoru Amano , Daisuke Saida , Junichi Ito , Yuichi Ohsawa , Chikayoshi Kamata , Saori Kashiwada , Hiroaki Yoda
IPC分类号： H01L27/22 , H01L43/10 , H01L43/02
CPC分类号： H01L43/02 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element according to an embodiment includes: a first to third ferromagnetic layers, and a first nonmagnetic layer, the first and second ferromagnetic layers each having an axis of easy magnetization in a direction perpendicular to a film plane, the third ferromagnetic layer including a plurality of ferromagnetic oscillators generating rotating magnetic fields of different oscillation frequencies from one another. Spin-polarized electrons are injected into the first ferromagnetic layer and induce precession movements in the plurality of ferromagnetic oscillators of the third ferromagnetic layer by flowing a current between the first and third ferromagnetic layers, the rotating magnetic fields are generated by the precession movements and are applied to the first ferromagnetic layer, and at least one of the rotating magnetic fields assists a magnetization switching in the first ferromagnetic layer.
摘要翻译：根据实施例的磁阻元件包括：第一至第三铁磁层和第一非磁性层，第一和第二铁磁层各自在垂直于膜平面的方向上具有容易磁化的轴，所述第三铁磁层包括多个铁磁振荡器产生彼此不同振荡频率的旋转磁场。旋转极化电子被注入到第一铁磁层中并通过在第一和第三铁磁层之间流动电流而引起第三铁磁层的多个铁磁振荡器中的进动运动，旋转磁场由进动运动产生，并且是施加到第一铁磁层，并且至少一个旋转磁场有助于第一铁磁层中的磁化切换。

8. 发明申请

US20120196084A1 NANO-IMPRINT MOLD AND SUBSTRATE WITH UNEVEN PATTERNS MANUFACTURED BY USING THE MOLD 有权
标题翻译：使用模具制造的未加工图案的纳米印模和基材
公开(公告)号：US20120196084A1
公开(公告)日：2012-08-02
申请号：US13422897
申请日：2012-03-16
申请人： Yuichi OHSAWA , Junichi Ito , Tomotaka Ariga , Yoshinari Kurosaki , Saori Kashiwada
发明人： Yuichi OHSAWA , Junichi Ito , Tomotaka Ariga , Yoshinari Kurosaki , Saori Kashiwada
IPC分类号： B29C59/02 , B32B3/10 , B82Y40/00
CPC分类号： B29C59/022 , B29C2059/023 , Y10T428/24355
摘要： According to one embodiment, a nano-imprint mold includes plural pairs of first and second protrusions formed on a base layer, each of which is formed along the same straight line. Each protrusion has a top surface and four side surfaces. The first and second protrusions are mirror-symmetrical with each other. A first side surface of the first protrusion and a second side surface of the second protrusion face each other. A first angle between the first side surface or the second side surface and a main surface of the base layer is not less than 85° and not more than 90°. A second angle between a third side surface in the first protrusion or a fourth side surface in the second protrusion and the main surface of the base layer is not less than 70° and not more than 88°. The first angle is larger than the second angle.
摘要翻译：根据一个实施例，纳米压印模具包括形成在基底层上的多对第一和第二突起，其中每一个沿着相同的直线形成。每个突起具有顶表面和四个侧表面。第一和第二突起彼此镜像对称。第一突起的第一侧表面和第二突起的第二侧表面彼此面对。第一侧表面或第二侧表面与基层的主表面之间的第一角度不小于85°且不大于90°。第一突起中的第三侧表面或第二突起中的第四侧表面与基底层的主表面之间的第二角度不小于70°且不大于88°。第一角度大于第二角度。

9. 发明授权

US07889543B2 Magnetic memory element and magnetic memory apparatus 有权
标题翻译：磁存储元件和磁存储装置
公开(公告)号：US07889543B2
公开(公告)日：2011-02-15
申请号：US12379402
申请日：2009-02-20
申请人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
发明人： Hirofumi Morise , Shiho Nakamura , Yuichi Ohsawa , Satoshi Yanagi , Daisuke Saida
IPC分类号： G11C11/02
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： A magnetic memory element is provided with first and second ferromagnetic fixed layers, a ferromagnetic memory layer, nonmagnetic first and second intermediate layers. The memory layer is disposed between the first and second fixed layers, and has a variable magnetization direction. In order to cancel asymmetry of a write-in current of the element, the element is provided so that the memory layer receives a larger perpendicular stray field from the first fixed layer than from the second fixed layer, and then a magnetization direction of a portion of the memory layer being nearest to the first intermediate layer and the magnetization direction of the first fixed layer are antiparallel to each other whenever a magnetization direction of a portion of the memory layer being nearest to the second intermediate layer and the magnetization direction of the second fixed layer are parallel to each other, and vice versa.
摘要翻译：磁存储元件设置有第一和第二铁磁固定层，铁磁存储层，非磁性第一和第二中间层。存储层设置在第一和第二固定层之间，具有可变的磁化方向。为了消除元件的写入电流的不对称性，提供元件，使得存储层从第一固定层接收比来自第二固定层的更大的垂直杂散场，然后接收部分的磁化方向所述存储层的最靠近所述第一中间层的磁化方向和所述第一固定层的磁化方向在所述存储层的一部分的磁化方向最接近所述第二中间层的磁化方向和所述第二中间层的磁化方向相互反平行时，固定层彼此平行，反之亦然。

10. 发明授权

US07440239B2 Magneto-resistance effect element and reproducing head 有权
标题翻译：磁阻效应元件和再现头
公开(公告)号：US07440239B2
公开(公告)日：2008-10-21
申请号：US10671586
申请日：2003-09-29
申请人： Yuzo Kamiguchi , Masayuki Takagishi , Yuichi Ohsawa
发明人： Yuzo Kamiguchi , Masayuki Takagishi , Yuichi Ohsawa
IPC分类号： G11B5/127
CPC分类号： G11B5/3903 , G01R33/09 , G11B5/39 , G11B2005/0002 , H01L43/08
摘要： It is possible to obtain sensitivity which can achieve an excellent error rate with a high recording density. There are provided a magnetization free layer which has two opposed main surfaces, one of which is set to be generally parallel to an air bearing surface; an intermediate layer which is formed on an opposite side face of the magnetization free layer from a medium to come in contact with the magnetization free layer; and a pair of magnetization pinned layers which are formed on an opposite side face of the intermediate layer from the magnetization free layer to come in contact with the intermediate layer and extend outwardly. A sense current flows from one magnetization pinned layer to the other magnetization pinned layer through the magnetization free layer.
摘要翻译：可以获得可以以高记录密度实现出色错误率的灵敏度。提供了一个磁化自由层，它具有两个相对的主表面，其中一个主表面大致平行于空气轴承表面; 在与磁化自由层接触的介质上形成在磁化自由层的相对侧面上的中间层; 以及一对磁化固定层，其形成在中间层的与磁化自由层相对的侧面上以与中间层接触并向外延伸。感测电流通过无磁化层从一个磁化固定层流向另一个磁化固定层。

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