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1. 发明授权

US08420499B2 Concave-convex pattern forming method and magnetic tunnel junction element forming method 有权
标题翻译：凹凸图案形成方法和磁隧道结元件形成方法
公开(公告)号：US08420499B2
公开(公告)日：2013-04-16
申请号：US13300062
申请日：2011-11-18
申请人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
发明人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
IPC分类号： H01L21/76
CPC分类号： G11B5/855 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.
摘要翻译：根据实施例的形成凹凸图案的方法包括：在基材上形成引导图案，所述引导图案具有凸部; 在引导图案上形成形成层，所述形成层包括通过层叠第一层和第二层而形成的层叠结构，所述第一层包括选自第一金属元素和准金属元素中的至少一种元素，所述第二层包括与第一金属元件不同的第二金属元件; 通过在形成层上进行蚀刻，仅选择性地离开形成层在凸部的侧面; 去除引导图案; 并且通过在基材上进行蚀刻，将其余形成层用作掩模，在基材中形成凹凸图案。

2. 发明申请

US20130070523A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130070523A1
公开(公告)日：2013-03-21
申请号：US13416408
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. A magnetization of the first ferromagnetic layer is fixed in a direction perpendicular to the first ferromagnetic layer. A magnetization of the second ferromagnetic layer is variable. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit stacked with the first stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer. A magnetization of the third ferromagnetic layer is variable. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. A magnetization of the fourth ferromagnetic layer is fixed in a direction perpendicular to the fourth ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers.
摘要翻译：根据一个实施例，磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括第一和第二铁磁层和第一非磁性层。第一铁磁层的磁化在垂直于第一铁磁层的方向固定。第二铁磁层的磁化是可变的。第一非磁性层设置在第一和第二铁磁层之间。与第一堆叠单元堆叠的第二堆叠单元包括第三和第四铁磁层和第二非磁性层。第三铁磁层的磁化是可变的。第四铁磁层与第三铁磁层层叠。第四铁磁层的磁化在垂直于第四铁磁层的方向固定。第二非磁性层设置在第三和第四铁磁层之间。

3. 发明申请

US20130070522A1 NONVOLATILE MEMORY DEVICE 有权
标题翻译：非易失性存储器件
公开(公告)号：US20130070522A1
公开(公告)日：2013-03-21
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译：根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。磁存储元件包括包括第一和第二堆叠单元的堆叠体。第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二铁磁层具有通过通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。振荡的频率根据第二铁磁层的磁化方向而变化。控制单元包括读出第二铁磁层的磁化的读取单元。

4. 发明申请

US20130069185A1 MAGNETIC MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE 有权
标题翻译：磁记忆元件和非易失性存储器件
公开(公告)号：US20130069185A1
公开(公告)日：2013-03-21
申请号：US13416724
申请日：2012-03-09
申请人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译：根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。第二和第三铁磁层的磁化是可变的。第一和第四铁磁层的磁化在垂直于层表面的方向固定。当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。

5. 发明申请

US20120243308A1 MAGNETIC ELEMENT AND NONVOLATILE MEMORY DEVICE 失效
标题翻译：磁性元件和非易失性存储器件
公开(公告)号：US20120243308A1
公开(公告)日：2012-09-27
申请号：US13227959
申请日：2011-09-08
申请人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
发明人： Daisuke SAIDA , Minoru AMANO , Junichi ITO , Yuichi OHSAWA , Saori KASHIWADA , Chikayoshi KAMATA , Tadaomi DAIBOU
IPC分类号： G11C11/15 , H01L29/82
CPC分类号： G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.
摘要翻译：根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。中间互连设置在导电层之间。第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

6. 发明申请

US20120241881A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：US20120241881A1
公开(公告)日：2012-09-27
申请号：US13310154
申请日：2011-12-02
申请人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
发明人： Tadaomi DAIBOU , Junichi Ito , Tadashi Kai , Minoru Amano , Hiroaki Yoda , Terunobu Miyazaki , Shigemi Mizukami , Koji Ando , Kay Yakushiji , Shinji Yuasa , Hitoshi Kubota , Akio Fukushima , Taro Nagahama , Takahide Kubota
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , H01L23/528 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L2924/0002 , H01L2924/00
摘要： A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45≦x
摘要翻译：根据实施例的磁阻元件包括：基底层; 第一磁性层，其形成在所述基底层上，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第一磁性膜，所述第一磁性膜包括Mn x Ga 100-x（45≤n1E; x <64原子％）; 形成在第一磁性层上的第一非磁性层; 以及形成在所述第一非磁性层上的第二磁性层，并且包括在垂直于膜平面的方向上具有容易磁化的轴的第二磁性膜，所述第二磁性膜包括MnyGa100-y（45＆lt; IL1; y <64原子％），。第一和第二磁性层包括彼此不同的Mn组成比，第一磁性层的磁化方向可以通过第一非磁性层在第一磁性层和第二磁性层之间流动的电流而改变。

7. 发明申请

US20120115250A1 CONCAVE-CONVEX PATTERN FORMING METHOD AND MAGNETIC TUNNEL JUNCTION ELEMENT FORMING METHOD 有权
标题翻译：凹凸图案形成方法和磁性隧道结构元素形成方法
公开(公告)号：US20120115250A1
公开(公告)日：2012-05-10
申请号：US13300062
申请日：2011-11-18
申请人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
发明人： Tomotaka Ariga , Yuichi Ohsawa , Junichi Ito , Yoshinari Kurosaki , Saori Kashiwada , Toshiro Hiraoka , Minoru Amano , Satoshi Yanagi
IPC分类号： H01L21/02 , H01L21/28
CPC分类号： G11B5/855 , H01L21/0337 , H01L21/31116 , H01L21/31122
摘要： A method of forming a concave-convex pattern according to an embodiment includes: forming a guide pattern on a base material, the guide pattern having a convex portion; forming a formative layer on the guide pattern, the formative layer including a stacked structure formed by stacking a first layer and a second layer, the first layer including at least one element selected from a first metal element and a metalloid element, the second layer including a second metal element different from the first metal element; selectively leaving the formative layer only at side faces of the convex portions by performing etching on the formative layer; removing the guide pattern; and forming the concave-convex pattern in the base material by performing etching on the base material, with the remaining formative layer being used as a mask.
摘要翻译：根据实施例的形成凹凸图案的方法包括：在基材上形成引导图案，所述引导图案具有凸部; 在引导图案上形成形成层，所述形成层包括通过层叠第一层和第二层而形成的层叠结构，所述第一层包括选自第一金属元素和准金属元素中的至少一种元素，所述第二层包括与第一金属元件不同的第二金属元件; 通过在形成层上进行蚀刻，仅选择性地离开形成层在凸部的侧面; 去除引导图案; 并且通过在基材上进行蚀刻，将其余形成层用作掩模，在基材中形成凹凸图案。

8. 发明授权

US08058080B2 Method of manufacturing a magnetic random access memory, method of manufacturing an embedded memory, and template 有权
标题翻译：磁性随机存取存储器的制造方法，嵌入式存储器的制造方法和模板
公开(公告)号：US08058080B2
公开(公告)日：2011-11-15
申请号：US12699721
申请日：2010-02-03
申请人： Takeshi Kajiyama , Yoshiaki Asao , Minoru Amano , Shigeki Takahashi , Masayoshi Iwayama , Kuniaki Sugiura
发明人： Takeshi Kajiyama , Yoshiaki Asao , Minoru Amano , Shigeki Takahashi , Masayoshi Iwayama , Kuniaki Sugiura
IPC分类号： H01L21/00 , H01L21/20 , H01L21/36
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228
摘要： A magnetic material of a magnetoresistive element is formed on a lower electrode. An upper electrode is formed on the magnetic material. A resist for nano-imprint lithography is formed on the upper electrode. A first pattern or a second pattern is formed in the resist by setting a first template or a second template into contact with the resist and curing the resist. The first template has the first pattern that corresponds to the magnetoresistive element and the lower electrode. The second template has the second pattern that corresponds to the magnetoresistive element and the upper electrode. The magnetic material and the lower electrode are patterned at the same time by using the resist having the first pattern, or the magnetic material and the upper electrode are patterned at the same time by using the resist having the second pattern.
摘要翻译：磁阻元件的磁性材料形成在下电极上。在磁性材料上形成上部电极。在上电极上形成用于纳米压印光刻的抗蚀剂。通过将第一模板或第二模板与抗蚀剂接触并固化抗蚀剂，在抗蚀剂中形成第一图案或第二图案。第一模板具有对应于磁阻元件和下电极的第一图案。第二模板具有对应于磁阻元件和上电极的第二图案。通过使用具有第一图案的抗蚀剂，同时对磁性材料和下部电极进行图案化，或者通过使用具有第二图案的抗蚀剂同时对磁性材料和上部电极进行图案化。

9. 发明申请

US20100078763A1 RESISTANCE-CHANGE MEMORY HAVING RESISTANCE-CHANGE ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有电阻变化元件的电阻变化记忆及其制造方法
公开(公告)号：US20100078763A1
公开(公告)日：2010-04-01
申请号：US12559446
申请日：2009-09-14
申请人： Keiji HOSOTANI , Yoshiaki ASAO , Kuniaki SUGIURA , Masatoshi YOSHIKAWA , Sumio IKEGAWA , Shigeki TAKAHASHI , Minoru AMANO
发明人： Keiji HOSOTANI , Yoshiaki ASAO , Kuniaki SUGIURA , Masatoshi YOSHIKAWA , Sumio IKEGAWA , Shigeki TAKAHASHI , Minoru AMANO
IPC分类号： H01L29/86 , H01L21/8239
CPC分类号： H01L43/08 , G11C11/161
摘要： A resistance-change memory includes an interlayer insulating film, a lower electrode layer, a fixed layer, a first insulating film, a recording layer, a second insulating film, a conducting layer and an interconnect. The interlayer insulating film is formed on a semiconductor substrate and has a step. The lower electrode layer is formed on the interlayer insulating film including the step. The fixed layer is formed on the lower electrode layer and has invariable magnetization. The first insulating film is formed on the fixed layer. The recording layer is formed on part of the first insulating film and has variable magnetization. The second insulating film is over the recording layer and in contact with the first insulating film. The conducting layer is formed on the second insulating film. The interconnect is connected to the conducting layer.
摘要翻译：电阻变化存储器包括层间绝缘膜，下电极层，固定层，第一绝缘膜，记录层，第二绝缘膜，导电层和互连。层间绝缘膜形成在半导体基板上并具有台阶。包括该步骤的层间绝缘膜上形成下电极层。固定层形成在下电极层上，具有不变的磁化。第一绝缘膜形成在固定层上。记录层形成在第一绝缘膜的一部分上并且具有可变的磁化强度。第二绝缘膜在记录层上方并与第一绝缘膜接触。导电层形成在第二绝缘膜上。互连连接到导电层。

10. 发明授权

US07359163B2 Tunnel magnetoresistance effect device, and a portable personal device 有权
标题翻译：隧道磁阻效应器，以及便携式个人设备
公开(公告)号：US07359163B2
公开(公告)日：2008-04-15
申请号：US10884946
申请日：2004-07-07
申请人： Minoru Amano , Yoshiaki Saito
发明人： Minoru Amano , Yoshiaki Saito
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/15 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L27/228
摘要： A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferromagnetic material. An insulator material layer is inserted in the magnetization fixed layer at a distance from the antiferromagnetic material layer and the tunnel barrier layer. One material can be expressed by NX, where X is a first element selected from the group consisting of oxygen, nitrogen and carbon; and N is a second element, provided that the bonding energy between the first and the second elements is higher than the bonding energy between manganese and the first element. A second material can be expressed by MX, where M is an element selected from the group consisting of titanium, tantalum, vanadium, aluminum, europium, and scandium; and X is an element selected from the group consisting of oxygen, nitrogen and carbon. The tunnel magnetoresistance effect device suppresses the diffusion of Mn from the Mn based alloy constituting the antiferromagnetic material layer even after heat treatment is performed.
摘要翻译：一种TMR装置，包括由含铁的反铁磁材料制成的反铁磁层，由铁磁材料制成的磁化固定层，由介电材料制成的隧道势垒层和由铁磁材料制成的无磁化层。将绝缘体材料层插入到与反铁磁性材料层和隧道势垒层相隔一定距离的磁化固定层中。一种材料可由NX表示，其中X是选自氧，氮和碳的第一元素; 并且N是第二元素，条件是第一和第二元素之间的结合能高于锰与第一元素之间的键合能。第二种材料可以由MX表示，其中M是选自钛，钽，钒，铝，铕和钪的元素; X是选自氧，氮和碳的元素。隧道磁阻效应器件即使在进行热处理之后也能抑制构成反铁磁体层的Mn基合金的Mn扩散。

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