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    • 3. 发明授权
    • Heating apparatus, heating method, and computer readable storage medium
    • 加热装置,加热方法和计算机可读存储介质
    • US08186077B2
    • 2012-05-29
    • US13153660
    • 2011-06-06
    • Tatsuya KawajiYuichi SakaiMasatoshi Kaneda
    • Tatsuya KawajiYuichi SakaiMasatoshi Kaneda
    • F26B11/05
    • H01L21/67109H01L21/6838H01L21/6875
    • A disclosed heating apparatus for heating a substrate on which a film is coated includes a process chamber having a gas supply opening for supplying a first gas to the process chamber and a gas evacuation opening for evacuating the first gas from the process chamber; a heating plate that is arranged in the process chamber and includes a heating element for heating the substrate; plural protrusions arranged on the heating plate so as to support the substrate; plural suction holes formed in the heating plate so as to attract by suction the substrate toward the heating plate; and a gas inlet adapted to supply a second gas to a gap between the heating plate and the substrate supported by the plural protrusions.
    • 公开的用于加热其上涂覆有薄膜的基板的加热装置包括具有用于向处理室供应第一气体的气体供给开口的处理室和用于从处理室排出第一气体的排气开口; 加热板,其设置在所述处理室中并且包括用于加热所述基板的加热元件; 多个突起,布置在所述加热板上以支撑所述基板; 多个吸入孔,形成在加热板中,以便通过吸引衬底吸引加热板; 以及气体入口,其适于将第二气体供应到由所述多个突起支撑的所述加热板和所述基板之间的间隙。
    • 8. 发明申请
    • PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON INGOT
    • 生产多晶硅硅胶的方法
    • US20090139446A1
    • 2009-06-04
    • US11719675
    • 2005-11-30
    • Yoshimichi KimuraYuichi Sakai
    • Yoshimichi KimuraYuichi Sakai
    • C30B9/00
    • C30B29/06C30B11/002C30B11/003
    • Provided is a process in which a polycrystalline silicon ingot improved in life time characteristics, which are correlated with the conversion efficiency of solar wafers, is inexpensively produced by the ordinary-pressure hydrogen-atmosphere melting method. In the process, the generation of oxygen and impurities in the silicon melt is inhibited and light-element impurities are removed through reaction or crystallization. Fine crystal grains can be grown at a high rate, and a high-purity polycrystalline silicon ingot having a crystal structure reduced in crystal defect can be grown.A silicon raw material is melted in an atmosphere of 100% hydrogen at ordinary pressure or an elevated pressure to prepare a silicon melt and simultaneously dissolve hydrogen in the silicon melt. The silicon melt containing hydrogen dissolved therein is solidified. Thereafter, the solid is held at a high temperature around the solidification temperature to grow silicon crystal grains in the solid phase and thereby obtain a polycrystalline silicon ingot.
    • 提供了通过普通氢气氛围熔化法廉价地生产与太阳能晶片的转换效率相关的寿命特性提高的多晶硅锭的方法。 在此过程中,硅熔体中氧和杂质的产生被抑制,轻元素杂质通过反应或结晶除去。 可以高速生长细晶粒,并且可以生长晶体结构减小晶体缺陷的高纯度多晶硅锭。 硅原料在常压或高压下在100%氢气气氛中熔融以制备硅熔体并同时将氢溶解在硅熔体中。 含有溶解在其中的氢的硅熔体固化。 然后,将固体保持在固化温度附近的高温下,使固相中的硅晶粒生长,得到多晶硅锭。