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1. 发明授权

US09659968B2 Display device comprising a metal oxide semiconductor channel and a specified insulating layer arrangement 有权
公开(公告)号：US09659968B2
公开(公告)日：2017-05-23
申请号：US14244419
申请日：2014-04-03
申请人： Junichi Koezuka , Masahiro Katayama , Yukinori Shima , Kenichi Okazaki , Takuya Matsuo , Shigeyasu Mori , Yosuke Kanzaki , Hiroshi Matsukizono
发明人： Junichi Koezuka , Masahiro Katayama , Yukinori Shima , Kenichi Okazaki , Takuya Matsuo , Shigeyasu Mori , Yosuke Kanzaki , Hiroshi Matsukizono
IPC分类号： H01L27/12 , H01L23/00 , H01L23/31
CPC分类号： H01L27/1225 , H01L23/3121 , H01L23/564 , H01L27/1248 , H01L2924/0002 , H01L2924/0001 , H01L2924/00
摘要： Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layer 122 which covers the pixel transistor and includes an inorganic material, a second insulating layer 124 which is over the first insulating layer and includes an organic material, and a third insulating layer 128 which is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.

2. 发明申请

US20130270555A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130270555A1
公开(公告)日：2013-10-17
申请号：US13861587
申请日：2013-04-12
申请人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
发明人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02172 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.
摘要翻译：目的是抑制使用氧化物半导体膜并具有短沟道长度的晶体管的导通模式故障。半导体器件包括栅电极304，形成在栅电极上的栅极绝缘膜306，栅极绝缘膜上的氧化物半导体膜308以及形成在氧化物半导体膜上的源电极310a和漏电极310b。氧化物半导体膜的沟道长度L大于等于1μm且小于等于50μm。氧化物半导体膜在X射线衍射测定中具有在31°附近的旋转角2θ处的峰值。

3. 发明授权

US09362411B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09362411B2
公开(公告)日：2016-06-07
申请号：US13861587
申请日：2013-04-12
申请人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
发明人： Kenichi Okazaki , Masatoshi Yokoyama , Masayuki Sakakura , Yukinori Shima , Yosuke Kanzaki , Hiroshi Matsukizono , Takuya Matsuo , Yoshitaka Yamamoto
IPC分类号： H01L21/02 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02172 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.
摘要翻译：目的是抑制使用氧化物半导体膜并具有短沟道长度的晶体管的导通模式故障。半导体器件包括栅电极304，形成在栅电极上的栅极绝缘膜306，栅极绝缘膜上的氧化物半导体膜308以及形成在氧化物半导体膜上的源电极310a和漏电极310b。氧化物半导体膜的沟道长度L大于等于1μm且小于等于50μm。氧化物半导体膜具有在旋转角2θ处的峰值; 在X射线衍射测量中在31°附近。

4. 发明申请

US20140117350A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20140117350A1
公开(公告)日：2014-05-01
申请号：US14062085
申请日：2013-10-24
申请人： Junichi KOEZUKA , Yukinori SHIMA , Yasuharu HOSAKA , Kenichi OKAZAKI , Takuya MATSUO , Shigeyasu MORI , Yosuke KANZAKI , Hiroshi MATSUKIZONO
发明人： Junichi KOEZUKA , Yukinori SHIMA , Yasuharu HOSAKA , Kenichi OKAZAKI , Takuya MATSUO , Shigeyasu MORI , Yosuke KANZAKI , Hiroshi MATSUKIZONO
IPC分类号： H01L27/12
CPC分类号： H01L27/1225 , H01L27/3262
摘要： To improve the reliability of a transistor as well as to inhibit fluctuation in electric characteristics. A display device includes a pixel portion and a driver circuit portion outside the pixel portion; the pixel portion includes a pixel transistor, a first insulating film covering the pixel transistor and including an inorganic material, a second insulating film including an organic material over the first insulating film, and a third insulating film including an inorganic material over the second insulating film; and the driver circuit portion includes a driving transistor to supply a signal to the pixel transistor, the first insulating film covering the driving transistor, and the second insulating film over the first insulating film, and further includes a region in which the third insulating film is not formed over the second insulating film or a region in which the second insulating film is not covered with the third insulating film.
摘要翻译：提高晶体管的可靠性以及抑制电特性的波动。显示装置包括像素部分和像素部分外部的驱动器电路部分; 像素部分包括像素晶体管，覆盖像素晶体管并且包括无机材料的第一绝缘膜，在第一绝缘膜上的包括有机材料的第二绝缘膜，以及在第二绝缘膜上的包括无机材料的第三绝缘膜 ; 并且所述驱动电路部分包括驱动晶体管，以向所述像素晶体管提供信号，所述第一绝缘膜覆盖所述驱动晶体管，并且所述第二绝缘膜在所述第一绝缘膜上方，并且还包括所述第三绝缘膜为不形成在第二绝缘膜上或第二绝缘膜未被第三绝缘膜覆盖的区域。

5. 发明申请

US20110315861A1 PHOTOELECTRIC CONVERSION DEVICE 有权
标题翻译：光电转换器件
公开(公告)号：US20110315861A1
公开(公告)日：2011-12-29
申请号：US13162699
申请日：2011-06-17
申请人： Yukinori SHIMA , Atsushi HIROSE
发明人： Yukinori SHIMA , Atsushi HIROSE
IPC分类号： H01L31/10 , H01L31/103 , H01L31/105
CPC分类号： H01L31/105 , H01L31/02162 , H01L31/095 , H01L31/1055
摘要： It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.
摘要翻译：本发明的目的是提供一种光功率消耗和安装面积减小并且产量提高的光电转换装置，并且进一步提供一种减少制造工艺和制造成本的光电转换装置。光电转换装置包括用于输出对应于照度的光电流的光电转换元件和对应于照度的电阻变化电阻。在光电转换装置中，光电转换元件的一个端子和电阻器的一个端子串联电连接; 光电转换元件的另一个端子连接到高电源电位; 电阻的另一端连接到低电源电位; 并且在光电转换元件或电阻器的光接收表面侧设置光度调节单元以调节照度。

6. 发明申请

US20160276489A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160276489A1
公开(公告)日：2016-09-22
申请号：US15168291
申请日：2016-05-31
申请人： Kenichi OKAZAKI , Masatoshi YOKOYAMA , Masayuki SAKAKURA , Yukinori SHIMA , Yosuke KANZAKI , Hiroshi MATSUKIZONO , Takuya MATSUO , Yoshitaka YAMAMOTO
发明人： Kenichi OKAZAKI , Masatoshi YOKOYAMA , Masayuki SAKAKURA , Yukinori SHIMA , Yosuke KANZAKI , Hiroshi MATSUKIZONO , Takuya MATSUO , Yoshitaka YAMAMOTO
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L21/02172 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode 304, a gate insulating film 306 formed over the gate electrode, an oxide semiconductor film 308 over the gate insulating film, and a source electrode 310a and a drain electrode 310b formed over the oxide semiconductor film. The channel length L of the oxide semiconductor film is more than or equal to 1 μm and less than or equal to 50 μm. The oxide semiconductor film has a peak at a rotation angle 2θ in the vicinity of 31° in X-ray diffraction measurement.
摘要翻译：目的是抑制使用氧化物半导体膜并具有短沟道长度的晶体管的导通模式故障。半导体器件包括栅电极304，形成在栅电极上的栅极绝缘膜306，栅极绝缘膜上的氧化物半导体膜308以及形成在氧化物半导体膜上的源电极310a和漏电极310b。氧化物半导体膜的沟道长度L大于等于1μm且小于等于50μm。氧化物半导体膜在X射线衍射测定中具有在31°附近的旋转角度2θ的峰值。

7. 发明授权

US09312278B2 Display device and electronic device 有权
标题翻译：显示设备和电子设备
公开(公告)号：US09312278B2
公开(公告)日：2016-04-12
申请号：US14062085
申请日：2013-10-24
申请人： Junichi Koezuka , Yukinori Shima , Yasuharu Hosaka , Kenichi Okazaki , Takuya Matsuo , Shigeyasu Mori , Yosuke Kanzaki , Hiroshi Matsukizono
发明人： Junichi Koezuka , Yukinori Shima , Yasuharu Hosaka , Kenichi Okazaki , Takuya Matsuo , Shigeyasu Mori , Yosuke Kanzaki , Hiroshi Matsukizono
IPC分类号： H01L27/12 , H01L27/32
CPC分类号： H01L27/1225 , H01L27/3262
摘要： To improve the reliability of a transistor as well as to inhibit fluctuation in electric characteristics. A display device includes a pixel portion and a driver circuit portion outside the pixel portion; the pixel portion includes a pixel transistor, a first insulating film covering the pixel transistor and including an inorganic material, a second insulating film including an organic material over the first insulating film, and a third insulating film including an inorganic material over the second insulating film; and the driver circuit portion includes a driving transistor to supply a signal to the pixel transistor, the first insulating film covering the driving transistor, and the second insulating film over the first insulating film, and further includes a region in which the third insulating film is not formed over the second insulating film or a region in which the second insulating film is not covered with the third insulating film.
摘要翻译：提高晶体管的可靠性以及抑制电特性的波动。显示装置包括像素部分和像素部分外部的驱动器电路部分; 像素部分包括像素晶体管，覆盖像素晶体管并且包括无机材料的第一绝缘膜，在第一绝缘膜上的包括有机材料的第二绝缘膜，以及在第二绝缘膜上的包括无机材料的第三绝缘膜 ; 并且所述驱动电路部分包括驱动晶体管，用于向所述像素晶体管提供信号，所述第一绝缘膜覆盖所述驱动晶体管，并且所述第二绝缘膜在所述第一绝缘膜上方，并且还包括所述第三绝缘膜为不形成在第二绝缘膜上或第二绝缘膜未被第三绝缘膜覆盖的区域。

8. 发明授权

US09117958B2 Photoelectric conversion device comprising photoelectric conversion element 有权
标题翻译：光电转换装置包括光电转换元件
公开(公告)号：US09117958B2
公开(公告)日：2015-08-25
申请号：US13162699
申请日：2011-06-17
申请人： Yukinori Shima , Atsushi Hirose
发明人： Yukinori Shima , Atsushi Hirose
IPC分类号： H01L31/00 , H01L31/105 , H01L31/0216 , H01L31/09
CPC分类号： H01L31/105 , H01L31/02162 , H01L31/095 , H01L31/1055
摘要： It is an object to provide a photoelectric conversion device whose power consumption and a mounting area are reduced and yield is improved and further to provide a photoelectric conversion device whose number of manufacturing processes and manufacturing cost are reduced. A photoelectric conversion device includes a photoelectric conversion element for outputting photocurrent corresponding to illuminance, and a resistor changing resistance corresponding to illuminance. In the photoelectric conversion device, one terminal of the photoelectric conversion element and one terminal of the resistor are electrically connected in series; the other terminal of the photoelectric conversion element is connected to a high power supply potential; the other terminal of the resistor is connected to a low power supply potential; and a light intensity adjusting unit is provided on a light reception surface side of the photoelectric conversion element or the resistor to adjust illuminance.
摘要翻译：本发明的目的是提供一种光功率消耗和安装面积减小并且产率提高的光电转换装置，并且进一步提供一种减少制造工艺和制造成本的光电转换装置。光电转换装置包括用于输出对应于照度的光电流的光电转换元件和对应于照度的电阻变化电阻。在光电转换装置中，光电转换元件的一个端子和电阻器的一个端子串联电连接; 光电转换元件的另一个端子连接到高电源电位; 电阻的另一端连接到低电源电位; 并且在光电转换元件或电阻器的光接收表面侧设置光度调节单元以调节照度。

9. 发明申请

US20140306218A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20140306218A1
公开(公告)日：2014-10-16
申请号：US14244419
申请日：2014-04-03
申请人： Junichi KOEZUKA , Masahiro KATAYAMA , Yukinori SHIMA , Kenichi OKAZAKI , Takuya MATSUO , Shigeyasu MORI , Yosuke KANZAKI , Hiroshi MATSUKIZONO
发明人： Junichi KOEZUKA , Masahiro KATAYAMA , Yukinori SHIMA , Kenichi OKAZAKI , Takuya MATSUO , Shigeyasu MORI , Yosuke KANZAKI , Hiroshi MATSUKIZONO
IPC分类号： H01L27/12 , H01L23/00
CPC分类号： H01L27/1225 , H01L23/3121 , H01L23/564 , H01L27/1248 , H01L2924/0002 , H01L2924/0001 , H01L2924/00
摘要： Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion 104 and a driver circuit portion 106 outside the pixel portion. The pixel portion includes a pixel transistor, a first insulating layer 122 which covers the pixel transistor and includes an inorganic material, a second insulating layer 124 which is over the first insulating layer and includes an organic material, and a third insulating layer 128 which is over the second insulating layer and includes an inorganic material. The driver circuit portion includes a driving transistor for supplying a signal to the pixel transistor, and the first insulating layer covering the driving transistor. The second insulating layer is not formed in the driver circuit portion.
摘要翻译：晶体管的电特性的变化最小化，晶体管的可靠性提高。显示装置包括像素部分104和在像素部分外的驱动器电路部分106。像素部分包括像素晶体管，覆盖像素晶体管并包括无机材料的第一绝缘层122，在第一绝缘层之上并包括有机材料的第二绝缘层124和第三绝缘层128 并且包括无机材料。驱动器电路部分包括用于向像素晶体管提供信号的驱动晶体管，以及覆盖驱动晶体管的第一绝缘层。第二绝缘层不形成在驱动电路部分中。

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