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    • 1. 发明授权
    • Graded dummy insertion
    • 分级虚拟插入
    • US08719755B2
    • 2014-05-06
    • US13562638
    • 2012-07-31
    • Wen-Shen ChouYung-Chow PengChih-Chiang ChangChin-Hua Wen
    • Wen-Shen ChouYung-Chow PengChih-Chiang ChangChin-Hua Wen
    • G06F17/50
    • G06F17/5068
    • Among other things, one or more techniques for graded dummy insertion and a resulting array are provided herein. For example an array is a metal oxide semiconductor (MOS) array, a metal oxide metal (MOM) array, or a resistor array. In some embodiments, a first region and a second region are identified based on a density gradient between a first pattern density associated with the first region and a second pattern density associated with the second region. For example, the first pattern density and the second pattern density are gate densities and/or poly densities. To this end, a dummy region is inserted between the first region and the second region, the dummy region includes a graded pattern density based on a first adjacent pattern density and a second adjacent pattern density. In this manner, graded dummy insertion is provided, thus enhancing edge cell performance for an array, for example.
    • 除此之外,本文提供了用于分级虚拟插入的一种或多种技术和所得到的阵列。 例如,阵列是金属氧化物半导体(MOS)阵列,金属氧化物金属(MOM)阵列或电阻阵列。 在一些实施例中,基于与第一区域相关联的第一图案密度与与第二区域相关联的第二图案密度之间的密度梯度来识别第一区域和第二区域。 例如,第一图案密度和第二图案密度是门密度和/或多密度。 为此,在第一区域和第二区域之间插入虚拟区域,虚拟区域包括基于第一相邻图案密度和第二相邻图案密度的渐变图案密度。 以这种方式,提供分级虚拟插入,从而提高阵列的边缘单元性能。
    • 10. 发明授权
    • Latch-up protection circuit for integrated circuits biased with multiple power supplies and its method
    • 用于多电源偏置的集成电路的锁存保护电路及其方法
    • US06473282B1
    • 2002-10-29
    • US09547186
    • 2000-04-11
    • Shi-Tron LinTa-Lee YuYung-Chow Peng
    • Shi-Tron LinTa-Lee YuYung-Chow Peng
    • H02H320
    • H01L27/0251
    • A latch-up protection circuit for an integrated circuit powered through a first power rail and a second power rail is disclosed, the integrated circuit having at least one semiconductor bulk of a conductivity type. The latch-up protection circuit comprises a control circuit and a switch circuit. The control circuit is connected to the first power rail and the second power rail for detecting a relative voltage therebetween and generating a first control signal and a second control signal. The switch circuit connected to the first power rail and the control circuit. When the relative voltage is greater than a first predetermined value, the switch circuit in response to the first control signal electrically connects the first power rail with the at least one semiconductor bulk. When the relative voltage is smaller than the first predetermined value, the switch in response to the first control signal electrically disconnects the first power rail from the at least one semiconductor bulk.
    • 公开了一种用于通过第一电力轨道和第二电力轨道供电的集成电路的闩锁保护电路,该集成电路具有至少一个导电类型的半导体本体。 闩锁保护电路包括控制电路和开关电路。 控制电路连接到第一电源轨和第二电源轨,用于检测它们之间的相对电压,并产生第一控制信号和第二控制信号。 开关电路连接到第一电源轨和控制电路。 当相对电压大于第一预定值时,响应于第一控制信号的开关电路将第一电源轨与至少一个半导体块电连接。 当相对电压小于第一预定值时,响应于第一控制信号的开关将第一电力轨与至少一个半导体块电气断开。