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1. 发明授权

US08625041B2 Array substrate, liquid crystal display for the same and manufacturing method thereof 有权
标题翻译：阵列基板，液晶显示器及其制造方法
公开(公告)号：US08625041B2
公开(公告)日：2014-01-07
申请号：US13355488
申请日：2012-01-21
申请人： Yung-Fu Chen , Rong-Bing Wu , Po-Hsiao Chen , Chien-Hao Wu
发明人： Yung-Fu Chen , Rong-Bing Wu , Po-Hsiao Chen , Chien-Hao Wu
IPC分类号： G02F1/1333
CPC分类号： G02F1/13439 , G02F1/134363 , G02F2001/133388 , G02F2001/136254 , G02F2001/136295 , G02F2201/123 , G02F2201/124
摘要： An array substrate, liquid crystal display for the same and manufacturing method thereof are described. The array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, a plurality of contact pads, a passivation layer and transparent conducting layer. The substrate has a first display region, a second display region and a first non-display region. The contact pads are disposed in the first non-display region. The transparent conducting layer disposed in the passivation layer includes a first pixel electrode, a second pixel electrode and a plurality of comb electrode. The first pixel electrode and second pixel electrode are disposed in the first display region and the second display region wherein the widths of the first pixel electrodes either are equal to or approximate the widths of the second pixel electrodes. The comb electrodes are disposed in the first non-display region and connected to the contact pads.
摘要翻译：对阵列基板，液晶显示器及其制造方法进行说明。阵列基板包括基板，多条扫描线，多条数据线，多个接触焊盘，钝化层和透明导电层。衬底具有第一显示区域，第二显示区域和第一非显示区域。接触垫设置在第一非显示区域中。设置在钝化层中的透明导电层包括第一像素电极，第二像素电极和多个梳状电极。第一像素电极和第二像素电极设置在第一显示区域和第二显示区域中，其中第一像素电极的宽度等于或接近第二像素电极的宽度。梳状电极设置在第一非显示区域中并连接到接触垫。

2. 发明申请

US20130114032A1 ARRAY SUBSTRATE, LIQUID CRYSTAL DISPLAY FOR THE SAME AND MANUFACTURING METHOD THEREOF 有权
标题翻译：阵列基板，液晶显示器及其制造方法
公开(公告)号：US20130114032A1
公开(公告)日：2013-05-09
申请号：US13355488
申请日：2012-01-21
申请人： Yung-fu CHEN , Rong-bing WU , Po-hsiao CHEN , Chien-hao WU
发明人： Yung-fu CHEN , Rong-bing WU , Po-hsiao CHEN , Chien-hao WU
IPC分类号： G02F1/1343 , G02F1/1345
CPC分类号： G02F1/13439 , G02F1/134363 , G02F2001/133388 , G02F2001/136254 , G02F2001/136295 , G02F2201/123 , G02F2201/124
摘要： An array substrate, liquid crystal display for the same and manufacturing method thereof are described. The array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, a plurality of contact pads, a passivation layer and transparent conducting layer. The substrate has a first display region, a second display region and a first non-display region. The contact pads are disposed in the first non-display region. The transparent conducting layer disposed in the passivation layer includes a first pixel electrode, a second pixel electrode and a plurality of comb electrode. The first pixel electrode and second pixel electrode are disposed in the first display region and the second display region wherein the widths of the first pixel electrodes either are equal to or approximate the widths of the second pixel electrodes. The comb electrodes are disposed in the first non-display region and connected to the contact pads.
摘要翻译：对阵列基板，液晶显示器及其制造方法进行说明。阵列基板包括基板，多条扫描线，多条数据线，多个接触焊盘，钝化层和透明导电层。衬底具有第一显示区域，第二显示区域和第一非显示区域。接触垫设置在第一非显示区域中。设置在钝化层中的透明导电层包括第一像素电极，第二像素电极和多个梳状电极。第一像素电极和第二像素电极设置在第一显示区域和第二显示区域中，其中第一像素电极的宽度等于或接近第二像素电极的宽度。梳状电极设置在第一非显示区域中并连接到接触垫。

3. 发明申请

US20130043945A1 System and Method for High-Frequency Amplifier 有权
标题翻译：高频放大器系统与方法
公开(公告)号：US20130043945A1
公开(公告)日：2013-02-21
申请号：US13210874
申请日：2011-08-16
申请人： Robert Francis McDermott , David Hover , Guilhem Jean-Antoine Ribeill , Yung-Fu Chen
发明人： Robert Francis McDermott , David Hover , Guilhem Jean-Antoine Ribeill , Yung-Fu Chen
IPC分类号： H03F1/00
CPC分类号： H03F3/195 , H03F2200/534
摘要： A system and method for operating an amplifier system is provided. The amplifier system includes an input providing a direct coupling configured to receive a high-frequency input signal having a frequency in at least one of a radiofrequency (RF) and microwave range. The amplifier system also includes an amplifier including a dielectric material separating at least two superconducting layers forming an amplifier loop configured to receive the high-frequency input signal and deliver an amplified signal. The amplifier system includes an output providing a direct coupling configured to deliver the amplified signal.
摘要翻译：提供了一种用于操作放大器系统的系统和方法。放大器系统包括提供直接耦合的输入，其被配置为接收具有射频（RF）和微波范围中的至少一个中的频率的高频输入信号。该放大器系统还包括放大器，该放大器包括隔离至少两个形成放大器回路的至少两个超导层的电介质材料，该放大器回路配置为接收高频输入信号并传送放大信号。放大器系统包括提供被配置为递送放大信号的直接耦合的输出。

4. 发明授权

US5821528A Two light intensities difference convert into frequency modulator for parallel photodiodes 失效
标题翻译：两个光强差异转换为并行光电二极管的频率调制器
公开(公告)号：US5821528A
公开(公告)日：1998-10-13
申请号：US762955
申请日：1996-12-10
申请人： Tai Shan Liao , Jui I. Tsai , Keh Shium Liu , Mang Ou Yang , Yung Fu Chen , Ming Li Chen
发明人： Tai Shan Liao , Jui I. Tsai , Keh Shium Liu , Mang Ou Yang , Yung Fu Chen , Ming Li Chen
IPC分类号： H03K3/0231 , H01J40/14
CPC分类号： H03K3/0231
摘要： The present invention includes two photodiodes in parallel connected to some transistors and an adjustable current source. The photocurrent difference from the two photodiodes combines with the current form the current source to be a positive value. This current then charges a capacitor. An automatic comparator circuit detects voltage of the charging capacitor. The Q output of the RS flip-flop is low and the transistor is off to charge the capacitor if the voltage of the capacitor is below a preset value. The buffer output is at low voltage in this case; The Q output of the RS flip-flop is high and the transistor is on to force discharging of the capacitor and the buffer output is at high level when the capacitor voltage reaches a preset value. By repeating these conditions, frequency modulated output can be obtained. The frequency value is related to the two light intensities difference and the current source combined current. When light intensity varies, the frequency varies accordingly. The current source can compensate the imbalance of dark currents between the two photodiodes. It can also decide the central frequency of this circuit. The present invention provides a new method to form two light intensities difference frequency modulator suitable for the control of frequency in a photoelectronic system.
摘要翻译：本发明包括并联连接到一些晶体管和可调电流源的两个光电二极管。与两个光电二极管的光电流差异与当前形式的电流源结合为正值。该电流然后对电容器充电。自动比较电路检测充电电容器的电压。如果电容器的电压低于预设值，则RS触发器的+ E，ovs Q + EE输出为低电平，晶体管关闭以对电容充电。在这种情况下，缓冲器输出为低电压; RS触发器的+ E，ovs Q + EE输出为高电平，晶体管导通，强制电容放电，当电容电压达到预设值时，缓冲器输出为高电平。通过重复这些条件，可以获得调频输出。频率值与两个光强差和电流源组合电流有关。当光强度变化时，频率相应变化。电流源可以补偿两个光电二极管之间的暗电流不平衡。它也可以决定该电路的中心频率。本发明提供一种形成两个光强差分调制器的新方法，该调制器适用于控制光电子系统中的频率。

5. 发明授权

US08582283B2 Fixing mechanism for fixing a display device 有权
标题翻译：用于固定显示装置的固定机构
公开(公告)号：US08582283B2
公开(公告)日：2013-11-12
申请号：US13185511
申请日：2011-07-19
申请人： Yung-Fu Chen , Bing-Ying Li , Chun-Yi Lin , Ching-Yu Chu , Ku-Chou Wu
发明人： Yung-Fu Chen , Bing-Ying Li , Chun-Yi Lin , Ching-Yu Chu , Ku-Chou Wu
IPC分类号： G06F1/16
CPC分类号： F16B37/02 , F16B37/002 , F16B37/043 , H04N5/64
摘要： A fixing mechanism for fixing a display device includes a display casing whereon a hole is formed, a shielding wall connected to a side of the display casing, and a bracket wedged inside the shielding wall in a detachable manner and installed on the side of the display casing. An opening is formed on the bracket. The fixing mechanism further includes a screwing component. An end of the screwing component passes through the hole on the display casing and is screwed inside the opening on the bracket. The other end of the screwing component is installed inside a wall mount. The shielding wall is for shielding the end of the screwing component.
摘要翻译：用于固定显示装置的固定机构包括：显示孔，其中形成有孔，屏蔽壁连接到显示器壳体的侧面;以及托架，其以可拆卸的方式楔入屏蔽壁的内侧，并安装在显示器的侧面套管。支架上形成一个开口。固定机构还包括螺纹部件。螺丝组件的端部穿过显示器壳体上的孔，并被拧入支架上的开口内。螺丝组件的另一端安装在墙壁支架内。屏蔽壁用于屏蔽螺丝组件的端部。

6. 发明申请

US20090080473A1 SEMICONDUCTOR SATURABLE ABSORBER AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体可饱和吸收器及其制造方法
公开(公告)号：US20090080473A1
公开(公告)日：2009-03-26
申请号：US11971401
申请日：2008-01-09
申请人： Kai-Feng HUANG , Yung-Fu Chen
发明人： Kai-Feng HUANG , Yung-Fu Chen
IPC分类号： H01S3/113
CPC分类号： H01S3/113 , G02F1/3523 , G02F2202/108 , H01S3/0621 , H01S3/0623 , H01S3/10046 , H01S3/1024 , H01S3/1118 , H01S3/1618 , H01S3/1673
摘要： A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier layer formed on the other side of the AlGaInAs QW. Each of the InAlAs barrier layers has a width being a half-wavelength of a light emitted by the AlGaInAs QW.
摘要翻译：提供半导体可饱和吸收体及其制造方法。半导体可饱和吸收体包括掺杂Fe的InP衬底，包括形成在掺杂Fe的InP衬底上的AlGaInAs QW和形成在AlGaInAs QW的一侧上的InAlAs势垒层的周期性单元，以及形成在另一个上的另一个InAlAs势垒层侧面的AlGaInAs QW。每个InAlAs阻挡层具有由AlGaInAs QW发射的光的半波长的宽度。

7. 发明授权

US07101221B1 Power transmission cable 失效
标题翻译：电力传输电缆
公开(公告)号：US07101221B1
公开(公告)日：2006-09-05
申请号：US11107930
申请日：2005-04-18
申请人： Yung-Fu Chen
发明人： Yung-Fu Chen
IPC分类号： H01R11/00
CPC分类号： H01R25/16
摘要： At least one set of power transmission cable is electrically coupled to a power supply and an electronic device powered by the power supply. The power transmission cable comprises: a connector comprising a first connect part, a second connect part, and a third connect part vertical to the first connect part and utilized to insertedly joint to the electronic device; and an electrically-conductive line, which is electrically coupled to the second connect part and has an electric plug, wherein the first connect part is electrically coupled to the power supply or separably and electrically coupled to the electric plug of the precedent electrically-conductive line to enable the user to determine the length and quantity of the power transmission cable to be connected according to the quantity of the electronic devices so that the problems resulting from the inseparable redundant cable in the conventional power transmission cable can be avoided.
摘要翻译：至少一组电力传输电缆电耦合到电源和由电源供电的电子设备。电力传输电缆包括：连接器，包括第一连接部分，第二连接部分和垂直于第一连接部分的第三连接部分，并且用于插入地连接到电子设备; 以及导电线，其电耦合到所述第二连接部分并且具有电插头，其中所述第一连接部分电耦合到所述电源或可分离地并且电耦合到所述先前导电线的电插头以使用户能够根据电子设备的数量确定要连接的电力传输电缆的长度和数量，从而可以避免常规电力传输电缆中不可分离的冗余电缆产生的问题。

8. 发明授权

US5966392A Butt-coupling pumped single-mode solid-state laser with fiber-coupled diode 失效
标题翻译：具有光纤耦合二极管的对接耦合泵浦单模固态激光器
公开(公告)号：US5966392A
公开(公告)日：1999-10-12
申请号：US910627
申请日：1997-08-13
申请人： Yung-Fu Chen , Ting-Ming Huang , Ching-Fen Kao , Chi-Luen Wang , Jui-I Tsai
发明人： Yung-Fu Chen , Ting-Ming Huang , Ching-Fen Kao , Chi-Luen Wang , Jui-I Tsai
IPC分类号： H01S3/06 , H01S3/08 , H01S3/0941 , H01S3/109 , H01S3/16 , H01S3/10
CPC分类号： H01S3/0627 , H01S3/09415 , H01S3/0604 , H01S3/08031 , H01S3/08045 , H01S3/094053 , H01S3/109 , H01S3/1611
摘要： A butt-coupling pumped single-mode solid-state laser is provided for generating a laser of single-transverse and single-longitudinal mode. The butt-coupling pumped single-mode solid-state laser includes: (1) a laser diode having an output facet for producing a pumping light; (2) a laser crystal immediately connected to the output facet of the laser diode with a specific length therebetween for generating an excited light at a fundamental wavelength in response to the pumping light; and (3) a mirror disposed away from the laser crystal with a specific distance for emanating a laser output.
摘要翻译：提供了一种对接耦合泵浦单模固态激光器，用于产生单横向和单纵模激光。对接耦合泵浦单模固态激光器包括：（1）具有用于产生泵浦光的输出小面的激光二极管; （2）激光晶体，其立即连接到激光二极管的输出端，其特别长度用于响应于泵浦光产生基波长的激发光; 和（3）远离激光晶体的反射镜，其具有用于发出激光输出的特定距离。

9. 发明授权

US07558299B2 Semiconductor saturable absorber and fabrication method thereof 有权
标题翻译：半导体可饱和吸收体及其制造方法
公开(公告)号：US07558299B2
公开(公告)日：2009-07-07
申请号：US11971401
申请日：2008-01-09
申请人： Kai-Feng Huang , Yung-Fu Chen
发明人： Kai-Feng Huang , Yung-Fu Chen
IPC分类号： H01S3/113
CPC分类号： H01S3/113 , G02F1/3523 , G02F2202/108 , H01S3/0621 , H01S3/0623 , H01S3/10046 , H01S3/1024 , H01S3/1118 , H01S3/1618 , H01S3/1673
摘要： A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier layer formed on the other side of the AlGaInAs QW. Each of the InAlAs barrier layers has a width being a half-wavelength of a light emitted by the AlGaInAs QW.
摘要翻译：提供半导体可饱和吸收体及其制造方法。半导体可饱和吸收体包括掺杂Fe的InP衬底，包括形成在掺杂Fe的InP衬底上的AlGaInAs QW和形成在AlGaInAs QW的一侧上的InAlAs势垒层的周期性单元，以及形成在另一个上的另一个InAlAs势垒层侧面的AlGaInAs QW。每个InAlAs阻挡层具有由AlGaInAs QW发射的光的半波长的宽度。

10. 发明申请

US20080052459A1 Redundant array of independent disks system 审中-公开
标题翻译：冗余阵列的独立磁盘系统
公开(公告)号：US20080052459A1
公开(公告)日：2008-02-28
申请号：US11878563
申请日：2007-07-25
申请人： Shi-Fan Chang , Yung-Fu Chen
发明人： Shi-Fan Chang , Yung-Fu Chen
IPC分类号： G06F13/28
CPC分类号： G06F12/0866 , G06F12/0246 , G06F2212/2146 , G06F2212/262 , G06F2212/7208
摘要： A redundant array of independent disks (RAID) system is provided, comprising a nonvolatile memory card array and a RAID controller. Wherein, the non-volatile memory card array consists of at least a non-volatile memory card. The invention has several advantages such as capability to expand storage capacity according to users' needs, shake-proof, abrasion-proof and great adaptability for environment.
摘要翻译：提供了独立磁盘冗余阵列（RAID）系统，其包括非易失性存储卡阵列和RAID控制器。其中，非易失性存储卡阵列由至少一个非易失性存储卡组成。本发明具有根据用户需求扩大存储容量的能力，防震，耐磨，对环境适应性强等优点。

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