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1. 发明授权

US08861619B2 System and method for high-frequency amplifier 有权
标题翻译：高频放大器的系统和方法
公开(公告)号：US08861619B2
公开(公告)日：2014-10-14
申请号：US13210874
申请日：2011-08-16
申请人： Robert Francis McDermott , David Hover , Guilhem Jean-Antoine Ribeill , Yung-Fu Chen
发明人： Robert Francis McDermott , David Hover , Guilhem Jean-Antoine Ribeill , Yung-Fu Chen
IPC分类号： H04L25/00 , H03F3/195
CPC分类号： H03F3/195 , H03F2200/534
摘要： A system and method for operating an amplifier system is provided. The amplifier system includes an input providing a direct coupling configured to receive a high-frequency input signal having a frequency in at least one of a radiofrequency (RF) and microwave range. The amplifier system also includes an amplifier including a dielectric material separating at least two superconducting layers forming an amplifier loop configured to receive the high-frequency input signal and deliver an amplified signal. The amplifier system includes an output providing a direct coupling configured to deliver the amplified signal.
摘要翻译：提供了一种用于操作放大器系统的系统和方法。放大器系统包括提供直接耦合的输入，其被配置为接收具有射频（RF）和微波范围中的至少一个中的频率的高频输入信号。该放大器系统还包括放大器，该放大器包括隔离至少两个形成放大器回路的至少两个超导层的电介质材料，该放大器回路配置为接收高频输入信号并传送放大信号。放大器系统包括提供被配置为递送放大信号的直接耦合的输出。

2. 发明申请

US20130043945A1 System and Method for High-Frequency Amplifier 有权
标题翻译：高频放大器系统与方法
公开(公告)号：US20130043945A1
公开(公告)日：2013-02-21
申请号：US13210874
申请日：2011-08-16
申请人： Robert Francis McDermott , David Hover , Guilhem Jean-Antoine Ribeill , Yung-Fu Chen
发明人： Robert Francis McDermott , David Hover , Guilhem Jean-Antoine Ribeill , Yung-Fu Chen
IPC分类号： H03F1/00
CPC分类号： H03F3/195 , H03F2200/534
摘要： A system and method for operating an amplifier system is provided. The amplifier system includes an input providing a direct coupling configured to receive a high-frequency input signal having a frequency in at least one of a radiofrequency (RF) and microwave range. The amplifier system also includes an amplifier including a dielectric material separating at least two superconducting layers forming an amplifier loop configured to receive the high-frequency input signal and deliver an amplified signal. The amplifier system includes an output providing a direct coupling configured to deliver the amplified signal.
摘要翻译：提供了一种用于操作放大器系统的系统和方法。放大器系统包括提供直接耦合的输入，其被配置为接收具有射频（RF）和微波范围中的至少一个中的频率的高频输入信号。该放大器系统还包括放大器，该放大器包括隔离至少两个形成放大器回路的至少两个超导层的电介质材料，该放大器回路配置为接收高频输入信号并传送放大信号。放大器系统包括提供被配置为递送放大信号的直接耦合的输出。

3. 发明申请

US20120037770A1 FIXING MECHANISM FOR FIXING A DISPLAY DEVICE 有权
标题翻译：固定显示设备的固定机构
公开(公告)号：US20120037770A1
公开(公告)日：2012-02-16
申请号：US13185511
申请日：2011-07-19
申请人： Yung-Fu Chen , Bing-Ying Li , Chun-Yi Lin , Ching-Yu Chu , Ku-Chou Wu
发明人： Yung-Fu Chen , Bing-Ying Li , Chun-Yi Lin , Ching-Yu Chu , Ku-Chou Wu
IPC分类号： H05K7/00
CPC分类号： F16B37/02 , F16B37/002 , F16B37/043 , H04N5/64
摘要： A fixing mechanism for fixing a display device includes a display casing whereon a hole is formed, a shielding wall connected to a side of the display casing, and a bracket wedged inside the shielding wall in a detachable manner and installed on the side of the display casing. An opening is formed on the bracket. The fixing mechanism further includes a screwing component. An end of the screwing component passes through the hole on the display casing and is screwed inside the opening on the bracket. The other end of the screwing component is installed inside a wall mount. The shielding wall is for shielding the end of the screwing component.
摘要翻译：用于固定显示装置的固定机构包括：显示孔，其中形成有孔，屏蔽壁连接到显示器壳体的侧面;以及托架，其以可拆卸的方式楔入屏蔽壁的内侧，并安装在显示器的侧面套管。支架上形成一个开口。固定机构还包括螺纹部件。螺丝组件的端部穿过显示器壳体上的孔，并被拧入支架上的开口内。螺丝组件的另一端安装在墙壁支架内。屏蔽壁用于屏蔽螺丝组件的端部。

4. 发明授权

US08625041B2 Array substrate, liquid crystal display for the same and manufacturing method thereof 有权
标题翻译：阵列基板，液晶显示器及其制造方法
公开(公告)号：US08625041B2
公开(公告)日：2014-01-07
申请号：US13355488
申请日：2012-01-21
申请人： Yung-Fu Chen , Rong-Bing Wu , Po-Hsiao Chen , Chien-Hao Wu
发明人： Yung-Fu Chen , Rong-Bing Wu , Po-Hsiao Chen , Chien-Hao Wu
IPC分类号： G02F1/1333
CPC分类号： G02F1/13439 , G02F1/134363 , G02F2001/133388 , G02F2001/136254 , G02F2001/136295 , G02F2201/123 , G02F2201/124
摘要： An array substrate, liquid crystal display for the same and manufacturing method thereof are described. The array substrate includes a substrate, a plurality of scan lines, a plurality of data lines, a plurality of contact pads, a passivation layer and transparent conducting layer. The substrate has a first display region, a second display region and a first non-display region. The contact pads are disposed in the first non-display region. The transparent conducting layer disposed in the passivation layer includes a first pixel electrode, a second pixel electrode and a plurality of comb electrode. The first pixel electrode and second pixel electrode are disposed in the first display region and the second display region wherein the widths of the first pixel electrodes either are equal to or approximate the widths of the second pixel electrodes. The comb electrodes are disposed in the first non-display region and connected to the contact pads.
摘要翻译：对阵列基板，液晶显示器及其制造方法进行说明。阵列基板包括基板，多条扫描线，多条数据线，多个接触焊盘，钝化层和透明导电层。衬底具有第一显示区域，第二显示区域和第一非显示区域。接触垫设置在第一非显示区域中。设置在钝化层中的透明导电层包括第一像素电极，第二像素电极和多个梳状电极。第一像素电极和第二像素电极设置在第一显示区域和第二显示区域中，其中第一像素电极的宽度等于或接近第二像素电极的宽度。梳状电极设置在第一非显示区域中并连接到接触垫。

5. 发明授权

US07558299B2 Semiconductor saturable absorber and fabrication method thereof 有权
标题翻译：半导体可饱和吸收体及其制造方法
公开(公告)号：US07558299B2
公开(公告)日：2009-07-07
申请号：US11971401
申请日：2008-01-09
申请人： Kai-Feng Huang , Yung-Fu Chen
发明人： Kai-Feng Huang , Yung-Fu Chen
IPC分类号： H01S3/113
CPC分类号： H01S3/113 , G02F1/3523 , G02F2202/108 , H01S3/0621 , H01S3/0623 , H01S3/10046 , H01S3/1024 , H01S3/1118 , H01S3/1618 , H01S3/1673
摘要： A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier layer formed on the other side of the AlGaInAs QW. Each of the InAlAs barrier layers has a width being a half-wavelength of a light emitted by the AlGaInAs QW.
摘要翻译：提供半导体可饱和吸收体及其制造方法。半导体可饱和吸收体包括掺杂Fe的InP衬底，包括形成在掺杂Fe的InP衬底上的AlGaInAs QW和形成在AlGaInAs QW的一侧上的InAlAs势垒层的周期性单元，以及形成在另一个上的另一个InAlAs势垒层侧面的AlGaInAs QW。每个InAlAs阻挡层具有由AlGaInAs QW发射的光的半波长的宽度。

6. 发明申请

US20080052459A1 Redundant array of independent disks system 审中-公开
标题翻译：冗余阵列的独立磁盘系统
公开(公告)号：US20080052459A1
公开(公告)日：2008-02-28
申请号：US11878563
申请日：2007-07-25
申请人： Shi-Fan Chang , Yung-Fu Chen
发明人： Shi-Fan Chang , Yung-Fu Chen
IPC分类号： G06F13/28
CPC分类号： G06F12/0866 , G06F12/0246 , G06F2212/2146 , G06F2212/262 , G06F2212/7208
摘要： A redundant array of independent disks (RAID) system is provided, comprising a nonvolatile memory card array and a RAID controller. Wherein, the non-volatile memory card array consists of at least a non-volatile memory card. The invention has several advantages such as capability to expand storage capacity according to users' needs, shake-proof, abrasion-proof and great adaptability for environment.
摘要翻译：提供了独立磁盘冗余阵列（RAID）系统，其包括非易失性存储卡阵列和RAID控制器。其中，非易失性存储卡阵列由至少一个非易失性存储卡组成。本发明具有根据用户需求扩大存储容量的能力，防震，耐磨，对环境适应性强等优点。

7. 发明授权

US06723210B2 Method for improving performance of sputtering target 失效
标题翻译：提高溅射靶性能的方法
公开(公告)号：US06723210B2
公开(公告)日：2004-04-20
申请号：US10255298
申请日：2002-09-26
申请人： Tun-Ho Teng , Yung-Fu Chen
发明人： Tun-Ho Teng , Yung-Fu Chen
IPC分类号： C23C1435
CPC分类号： C23C14/35 , H01J37/3408
摘要： A method for improving a performance of a sputtering target in a magnetron sputtering system having at least one magnet repetitively and retracingly scanning between two sides thereof and receiving a power input changing with a scanning position of the magnet is provided. The method includes the steps of stepwise reducing the power input while the magnet approaches a specific distance range near a retracing point, so as to reduce an erosion rate of the sputtering target by the magnetron sputtering system, and increasing the power input to a specific value while the magnet leaves the specific distance range, wherein the power input changes with the scanning position of the magnet, so as to improve the performance of the sputtering target.
摘要翻译：提供了一种用于改善磁控溅射系统中的溅射靶的性能的方法，该方法具有至少一个磁体，其两面之间重复地并且进行回扫，并接收随磁体的扫描位置变化的电力输入。该方法包括以下步骤：当磁体接近回扫点附近的特定距离范围时逐步减小功率输入，以便通过磁控溅射系统降低溅射靶的侵蚀速率，并将功率输入增加到特定值同时磁体离开特定的距离范围，其中功率输入随着磁体的扫描位置而变化，以提高溅射靶的性能。

8. 发明授权

US6094445A High-efficiency cavity doubling laser 失效
标题翻译：高效空腔加倍激光
公开(公告)号：US6094445A
公开(公告)日：2000-07-25
申请号：US148875
申请日：1998-09-08
申请人： Yung-Fu Chen , Chi-Luen Wang , Chien Yen-Jen , Jang Chaur-Sen
发明人： Yung-Fu Chen , Chi-Luen Wang , Chien Yen-Jen , Jang Chaur-Sen
IPC分类号： H01S3/109 , H01S3/10
CPC分类号： H01S3/109
摘要： A high-efficiency cavity doubling laser according to the invention contains a laser diode, a laser crystal and a non-linear crystal, is characterized in having a first gap between the laser diode and the laser crystal and a second gap between the laser crystal and the non-linear crystal. Therefore, heat created by the laser crystal can be dissipated by the air gaps and cannot be directly conducted to the laser diode and the non-linear crystal. Furthermore, the thermal distortion of the laser crystal can be compensated by adjusting the position of the non-linear crystal, thereby increasing the efficiency of the laser.
摘要翻译：根据本发明的高效腔体倍增激光器包含激光二极管，激光晶体和非线性晶体，其特征在于在激光二极管和激光晶体之间具有第一间隙，并且激光晶体和非线性晶体。因此，由激光晶体产生的热可以由气隙消散，不能直接传导到激光二极管和非线性晶体。此外，可以通过调整非线性晶体的位置来补偿激光晶体的热变形，从而提高激光器的效率。

9. 发明授权

US08582283B2 Fixing mechanism for fixing a display device 有权
标题翻译：用于固定显示装置的固定机构
公开(公告)号：US08582283B2
公开(公告)日：2013-11-12
申请号：US13185511
申请日：2011-07-19
申请人： Yung-Fu Chen , Bing-Ying Li , Chun-Yi Lin , Ching-Yu Chu , Ku-Chou Wu
发明人： Yung-Fu Chen , Bing-Ying Li , Chun-Yi Lin , Ching-Yu Chu , Ku-Chou Wu
IPC分类号： G06F1/16
CPC分类号： F16B37/02 , F16B37/002 , F16B37/043 , H04N5/64
摘要： A fixing mechanism for fixing a display device includes a display casing whereon a hole is formed, a shielding wall connected to a side of the display casing, and a bracket wedged inside the shielding wall in a detachable manner and installed on the side of the display casing. An opening is formed on the bracket. The fixing mechanism further includes a screwing component. An end of the screwing component passes through the hole on the display casing and is screwed inside the opening on the bracket. The other end of the screwing component is installed inside a wall mount. The shielding wall is for shielding the end of the screwing component.
摘要翻译：用于固定显示装置的固定机构包括：显示孔，其中形成有孔，屏蔽壁连接到显示器壳体的侧面;以及托架，其以可拆卸的方式楔入屏蔽壁的内侧，并安装在显示器的侧面套管。支架上形成一个开口。固定机构还包括螺纹部件。螺丝组件的端部穿过显示器壳体上的孔，并被拧入支架上的开口内。螺丝组件的另一端安装在墙壁支架内。屏蔽壁用于屏蔽螺丝组件的端部。

10. 发明申请

US20090080473A1 SEMICONDUCTOR SATURABLE ABSORBER AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体可饱和吸收器及其制造方法
公开(公告)号：US20090080473A1
公开(公告)日：2009-03-26
申请号：US11971401
申请日：2008-01-09
申请人： Kai-Feng HUANG , Yung-Fu Chen
发明人： Kai-Feng HUANG , Yung-Fu Chen
IPC分类号： H01S3/113
CPC分类号： H01S3/113 , G02F1/3523 , G02F2202/108 , H01S3/0621 , H01S3/0623 , H01S3/10046 , H01S3/1024 , H01S3/1118 , H01S3/1618 , H01S3/1673
摘要： A semiconductor saturable absorber and the fabrication method thereof are provided. The semiconductor saturable absorber includes a Fe-doped InP substrate, a periodic unit comprising an AlGaInAs QW formed on the Fe-doped InP substrate and an InAlAs barrier layer formed on one side of the AlGaInAs QW, and another InAlAs barrier layer formed on the other side of the AlGaInAs QW. Each of the InAlAs barrier layers has a width being a half-wavelength of a light emitted by the AlGaInAs QW.
摘要翻译：提供半导体可饱和吸收体及其制造方法。半导体可饱和吸收体包括掺杂Fe的InP衬底，包括形成在掺杂Fe的InP衬底上的AlGaInAs QW和形成在AlGaInAs QW的一侧上的InAlAs势垒层的周期性单元，以及形成在另一个上的另一个InAlAs势垒层侧面的AlGaInAs QW。每个InAlAs阻挡层具有由AlGaInAs QW发射的光的半波长的宽度。

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