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    • 2. 发明申请
    • PHOTO-SENSOR AND MANUFACTURING METHOD FOR PHOTO-SENSOR
    • 照相传感器的照相传感器和制造方法
    • US20090152563A1
    • 2009-06-18
    • US12333454
    • 2008-12-12
    • Masami HayashiYusuke Uchida
    • Masami HayashiYusuke Uchida
    • H01L31/112H01L31/18
    • H01L27/14609H01L27/14692
    • The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film.
    • 考虑到与非晶硅的粘合性,本发明防止源电极和漏电极断开。 根据本发明的光传感器是具有TFT阵列基板的光传感器,TFT阵列基板具有以阵列形式布置薄膜晶体管的元件区域,光传感器包括设置在薄膜上方的钝化膜 晶体管,并且其中形成接触孔;以及光电二极管,其通过接触孔连接到薄膜晶体管的漏电极,其中钝化膜和栅绝缘膜在元件外部的外围区域中被去除 区域,并且周边区域中的钝化膜的边缘形成在与基板的周边上的栅极绝缘膜的边缘或栅极绝缘膜的边缘的外侧相同的位置处。
    • 4. 发明申请
    • THIN FILM TRANSISTOR ARRAY SUBSTRATE, ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE
    • 薄膜晶体管阵列基板,其制造方法和液晶显示装置
    • US20100133541A1
    • 2010-06-03
    • US12628516
    • 2009-12-01
    • Yusuke UCHIDAKoji ODANaoki NAKAGAWA
    • Yusuke UCHIDAKoji ODANaoki NAKAGAWA
    • H01L33/00H01L29/786H01L21/336
    • H01L27/1288H01L27/1214H01L29/04H01L29/78696
    • In accordance with an exemplary aspect of the present invention, a thin film transistor array substrate includes a transparent insulating substrate, and a thin film transistor for pixel switching and a thin film transistor for a drive circuit formed on the transparent insulating substrate, wherein the thin film transistor for a drive circuit includes an amorphous silicon film formed on the transparent insulating film, a microcrystalline silicon film formed on the amorphous silicon film, a first source electrode and a first drain electrode formed on the microcrystalline silicon film, the first source electrode and the first drain electrode being opposed with a first channel area interposed therebetween, a protective insulating film that covers the first source electrode and the first drain electrode, and an upper gate electrode formed so as to be opposed to the first channel area with the protective insulating film interposed therebetween.
    • 根据本发明的示例性方面,薄膜晶体管阵列基板包括透明绝缘基板和用于像素切换的薄膜晶体管和形成在透明绝缘基板上的用于驱动电路的薄膜晶体管,其中薄的 用于驱动电路的薄膜晶体管包括形成在透明绝缘膜上的非晶硅膜,形成在非晶硅膜上的微晶硅膜,形成在微晶硅膜上的第一源电极和第一漏电极,第一源电极和 所述第一漏电极与插入其间的第一沟道区相对,覆盖所述第一源电极和所述第一漏电极的保护绝缘膜,以及形成为与所述第一沟道区相对的上栅电极,所述保护绝缘膜具有所述保护绝缘 胶片介于其间。
    • 7. 发明授权
    • Thin-film transistor, method of manufacturing the same, and display device
    • 薄膜晶体管,其制造方法和显示装置
    • US08269908B2
    • 2012-09-18
    • US12335806
    • 2008-12-16
    • Koji OdaNaoki NakagawaTakeshi OnoYusuke Uchida
    • Koji OdaNaoki NakagawaTakeshi OnoYusuke Uchida
    • G02F1/136
    • H01L29/4908H01L29/66765
    • A method of manufacturing a thin-film transistor according to an embodiment of the present invention includes the step of forming a gate insulator on a gate electrode. The gate insulator includes at least a first region being in contact with a hydrogenated amorphous silicon film, and a second region positioned below the first region. The first and second regions are deposited using a source gas including NH3, N2, and SiH4, and H2 gas or a mixture of H2 and He. The first region is deposited by setting the flow-rate ratio NH3/SiH4 in a range from 11 to 14 and the second region is deposited by setting the flow-rate ratio NH3/SiH4 to be equal to or less than 4. It is thus possible to provide a thin-film transistor having excellent characteristics and high reliability, a method of manufacturing the same, and a display device including the thin-film transistor mounted thereon.
    • 根据本发明的实施例的制造薄膜晶体管的方法包括在栅电极上形成栅极绝缘体的步骤。 栅极绝缘体至少包括与氢化非晶硅膜接触的第一区域和位于第一区域下方的第二区域。 使用包括NH 3,N 2和SiH 4,H 2气体或H 2和He的混合物的源气体来沉积第一和第二区域。 通过将流量比NH3 / SiH4设定在11〜14的范围内来沉积第一区域,并且通过将流量比NH3 / SiH4设定为等于或小于4来沉积第二区域。因此 可以提供具有优异特性和高可靠性的薄膜晶体管,其制造方法以及安装在其上的薄膜晶体管的显示装置。
    • 9. 发明申请
    • DISPLAY DRIVER AND DRIVING METHOD
    • 显示驱动和驱动方法
    • US20100295872A1
    • 2010-11-25
    • US12780915
    • 2010-05-16
    • Yusuke UCHIDAYukari KATAYAMAAkihito AKAIYoshiki KUROKAWA
    • Yusuke UCHIDAYukari KATAYAMAAkihito AKAIYoshiki KUROKAWA
    • G09G5/00G09G3/36G06T9/00
    • G09G3/3611G09G2320/0252G09G2320/0261G09G2340/16G09G2354/00
    • The present invention is directed to improve efficiency in use of a memory for storing display data which is used for an overdrive process. A display driver for driving a display device compresses image display data, stores the compressed data into a memory, and generates a preceding frame by decompressing the data read from the memory. A setting unit divides a display screen of the display device into, for example, a first region as a center part and a second region as a peripheral part. An overdrive computing unit generates overdrive display data in response to a present-time frame and the preceding frame, compresses the image display data in the first and second regions at first and second data compression ratios of small and large values, respectively, and stores the compressed data into the memory. By saving the space of the memory, the picture quality in the first region is improved.
    • 本发明旨在提高用于存储用于过驱动过程的显示数据的存储器的使用效率。 用于驱动显示装置的显示驱动器压缩图像显示数据,将压缩数据存储到存储器中,并且通过解压缩从存储器读取的数据来生成前一帧。 设置单元将显示设备的显示屏划分为例如作为中心部分的第一区域和作为周边部分的第二区域。 过驱动计算单元响应于当前帧和前一帧产生过驱动显示数据,分别以小值和大值的第一和第二数据压缩比压缩第一和第二区域中的图像显示数据,并存储 将数据压缩到内存中。 通过节省存储器的空间,改善了第一区域中的图像质量。