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1. 发明授权

US08465891B2 Electrophotographic photosensitive member and electrophotographic apparatus 有权
标题翻译：电子照相感光构件和电子照相设备
公开(公告)号：US08465891B2
公开(公告)日：2013-06-18
申请号：US12943977
申请日：2010-11-11
申请人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura , Daisuke Tazawa
发明人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura , Daisuke Tazawa
IPC分类号： G03G5/00
CPC分类号： G03G5/08235 , G03G5/0433 , G03G5/144 , G03G5/14704
摘要： An electrophotographic photosensitive member includes a photoconductive layer, an intermediate layer, and a surface layer. When Si+C atom density in the surface layer is represented by DS×1022 atoms/cm3, the DS is 6.60 or more, and when the maximal value of H/(Si+H) in a distribution of hydrogen quantity in the photoconductive layer in a layer thickness direction is represented by HPmax, the average value of the H/(Si+H) in the second photoconductive region is represented by HP2, the DS and the HP2 satisfy the following expression (1) and the DS and the HPmax satisfy the following expression (2). HP2≧0.07×DS−0.38 Expression (1) HPmax≦0.04×DS+0.60 Expression (2)
摘要翻译：电子照相感光构件包括光电导层，中间层和表面层。当表面层的Si + C原子密度由DS×1022原子/ cm3表示时，DS为6.60以上，并且当光电导层中氢量分布中H /（Si + H）的最大值在层厚度方向上由HPmax表示，第二光电导区域中的H /（Si + H）的平均值由HP2表示，DS和HP2满足以下表达式（1），DS和HPmax 满足以下表达式（2）。 HP2> = 0.07×DS-0.38表达式（1）HPmax@0.04×DS+0.60表达式（2）

2. 发明申请

US20100021837A1 METHOD FOR MANUFACTURING ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER 有权
标题翻译：制造电子照相感光元件的方法
公开(公告)号：US20100021837A1
公开(公告)日：2010-01-28
申请号：US12505698
申请日：2009-07-20
申请人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura
发明人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura
IPC分类号： G03G5/08
CPC分类号： G03G5/08242 , G03G5/08278
摘要： The present invention provides a method for manufacturing an electrophotographic photosensitive member including: forming a first surface layer and a second surface layer of the electrophotographic photosensitive member by supplying a source gas into a reaction vessel so that C2/S2 which are respectively flow rates of CH4 and SiH4 flowing when the second surface layer is formed can be 3 or more and 25 or less, and C1/S1 which are respectively flow rates of CH4 and SiH4 flowing when the first surface layer is formed can be C2/S2 or more but 60 or less, and adjusting the high-frequency power so that P2>P1 can be satisfied which are high-frequency powers respectively when the second surface layer is formed and when the first surface layer is formed, and C/(Si+C) of the first surface layer and C/(Si+C) of the second surface layer can be 0.50 or more and 0.80 or less.
摘要翻译：本发明提供了一种电子照相感光构件的制造方法，包括：通过将源气体供应到反应容器中形成电子照相感光构件的第一表面层和第二表面层，使得分别为CH 4的流速的C2 / S2 在形成第二表面层时流动的SiH 4可以是形成第一表面层时流通的CH4和SiH4的流量的3以上且25以下的C1 / S1可以是C2 / S2以上且60以下并且当形成第二表面层时以及当形成第一表面层时，调节高频功率使得可以满足作为高频功率的P2> P1，并且当形成第一表面层时，C /（Si + C）为第二表面层的第一表面层和C /（Si + C）可以为0.50以上且0.80以下。

3. 发明申请

US20100021835A1 ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS 有权
标题翻译：电子照相感光元件和电子照相设备
公开(公告)号：US20100021835A1
公开(公告)日：2010-01-28
申请号：US12504270
申请日：2009-07-16
申请人： Kazuyoshi Akiyama , Tomohito Ozawa , Yuu Nishimura
发明人： Kazuyoshi Akiyama , Tomohito Ozawa , Yuu Nishimura
IPC分类号： G03G15/00
CPC分类号： G03G5/08242 , G03G5/08228 , G03G15/751
摘要： The present invention provides an electrophotographic photosensitive member in which a photoconductive layer is an amorphous layer that contains a silicon atom as a main component, and a surface layer contains an aluminum atom, a zinc atom and an oxygen atom so as to satisfy Expression (1) and Expression (2): 3.0≦100 {y/(x+y)}≦7.0 (1), and 1.05≦z/(1.50x+y)≦1.20 (2), in Expression (1) and Expression (2), x represents atom % of the aluminum atom contained in the surface layer, y represents atom % of the zinc atom contained in the surface layer, and z represents atom % of the oxygen atom contained in the surface layer.
摘要翻译：本发明提供一种电子照相感光构件，其中光电导层是含有硅原子作为主要成分的非晶层，并且表面层含有铝原子，锌原子和氧原子以满足表达式（1 ）和表达式（2）中的表达式（2）：3.0y /（x + y）} 1.05z /（1.50x + y）在表达式（1）和表达式（2）中，x表示表面层中包含的铝原子的原子％ y表示表面层中所含的锌原子的原子％，z表示表面层中所含的氧原子的原子％。

4. 发明授权

US07850502B2 Method of manufacturing electron-emitting device and method of manufacturing image display apparatus 失效
标题翻译：制造电子发射器件的方法和制造图象显示装置的方法
公开(公告)号：US07850502B2
公开(公告)日：2010-12-14
申请号：US12421780
申请日：2009-04-10
申请人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
发明人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
IPC分类号： H01J9/00
CPC分类号： H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.
摘要翻译：一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

5. 发明申请

US20100021836A1 ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS 有权
标题翻译：电子照相感光元件和电子照相设备
公开(公告)号：US20100021836A1
公开(公告)日：2010-01-28
申请号：US12505692
申请日：2009-07-20
申请人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura
发明人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura
IPC分类号： G03G15/00
CPC分类号： G03G13/22 , G03G5/08235 , G03G5/144 , G03G5/14704
摘要： In an electrophotographic photosensitive member having a photoconductive layer and, provided on the photoconductive layer, a surface layer constituted of a hydrogenated amorphous silicon carbide, the ratio of the number of atoms of carbon atoms (C) to the sum of the number of atoms of silicon atoms (Si) and number of atoms of carbon atoms (C), C/(Si+C), in the surface layer is from or more to 0.75 or less, and the sum of atom density of the silicon atoms and atom density of the carbon atoms in the surface layer is 6.60×1022 atom/cm3 or more.
摘要翻译：在具有光电导层并且在光电导层上设置由氢化非晶碳化硅构成的表面层的电子照相感光构件中，碳原子数（C）与原子数之和的比例表面层中的硅原子（Si）和碳原子数（C），C /（Si + C）等于或大于0.75以下，硅原子的原子密度和原子密度之和的表面层中的碳原子数为6.60×10 22原子/ cm 3以上。

6. 发明申请

US20100159781A1 METHOD OF MANUFACTURING ELECTRON-EMITTING DEVICE AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS 失效
标题翻译：制造电子发射装置的方法和制造图像显示装置的方法
公开(公告)号：US20100159781A1
公开(公告)日：2010-06-24
申请号：US12421780
申请日：2009-04-10
申请人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
发明人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
IPC分类号： H01J9/00 , H01J9/12
CPC分类号： H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.
摘要翻译：一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

7. 发明申请

US20080173402A1 MICROWAVE PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：微波等离子体加工设备
公开(公告)号：US20080173402A1
公开(公告)日：2008-07-24
申请号：US11969544
申请日：2008-01-04
申请人： Nobumasa Suzuki , Yusuke Fukuchi , Yuu Nishimura
发明人： Nobumasa Suzuki , Yusuke Fukuchi , Yuu Nishimura
IPC分类号： C23C16/513 , B01J19/12 , H01L21/306
CPC分类号： C23C16/511 , H01J37/32091 , H01J37/32192 , H01J37/32541
摘要： A radiofrequency wave electrode that is electrically insulated from a microwave introduction portion is provided, or the microwave introduction portion also functions as a radiofrequency wave electrode, and a radiofrequency wave is superimposed on a microwave for generating plasma. With this feature a plasma having an enhanced intensity is generated even in a portion where otherwise the microwave plasma intensity may be low and reaction product may easily adhere to.
摘要翻译：设置与微波导入部电绝缘的射频波电极，或者微波导入部也起到射频波电极的作用，并且在用于产生等离子体的微波上叠加射频波。利用该特征，即使在其中微波等离子体强度可能较低并且反应产物可能容易粘附的部分中也产生具有增强强度的等离子体。

8. 发明申请

US20050136576A1 Plasma treatment method and plasma treatment apparatus 审中-公开
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US20050136576A1
公开(公告)日：2005-06-23
申请号：US11002903
申请日：2004-12-03
申请人： Shigenori Ishihara , Hirohisa Oda , Yuu Nishimura
发明人： Shigenori Ishihara , Hirohisa Oda , Yuu Nishimura
IPC分类号： H05H1/46 , F21V9/04 , F21V9/06 , G02B5/08 , G02B5/20 , H01L21/00 , H01L21/30 , H01L21/304 , H01L21/322 , H01L21/84
CPC分类号： H01L21/67069 , H01L21/3003
摘要： A substrate to be treated is treated in a vacuum chamber in such a state that a rear surface, opposite to a surface to be treated, of the substrate is disposed toward and upstream direction of a treatment gas containing hydrogen atom, by use of hydrogen plasma of the treatment gas. The plasma treatment is performed in such a state that the substrate to be treated is mounted on a substrate mounting table disposed in the chamber so that a surface of a device structure portion is disposed toward the substrate mounting table side.
摘要翻译：将待处理的基板在真空室中进行处理，使得通过使用氢等离子体将基板的与待处理的表面相对的后表面朝向包含氢原子的处理气体的上游方向设置的处理气体。在待处理基板安装在设置在室内的基板安装台上的状态下进行等离子体处理，使得器件结构部分的表面朝向基板安装台侧设置。

9. 发明授权

US08563203B2 Electrophotographic photosensitive member and electrophotographic apparatus 有权
标题翻译：电子照相感光构件和电子照相设备
公开(公告)号：US08563203B2
公开(公告)日：2013-10-22
申请号：US13165022
申请日：2011-06-21
申请人： Yuu Nishimura , Hironori Owaki , Daisuke Tazawa
发明人： Yuu Nishimura , Hironori Owaki , Daisuke Tazawa
IPC分类号： G03G5/00
CPC分类号： G03G15/75 , G03G5/08221 , G03G5/08228
摘要： An electrophotographic photosensitive member is configured such that the average value Hx_ave of the content of hydrogen atoms in a central portion area of a photoconductive layer in a cylindrically axial direction thereof, the content Hx of the hydrogen atoms at an arbitrary point in the central portion area, the average value Hy_ave of the content of the hydrogen atoms in an end area of the photoconductive layer in the cylindrically axial direction thereof, and the content Hy of the hydrogen atoms at an arbitrary point in the end area satisfy 10≦Hx_ave≦30, Hx
摘要翻译：电子照相感光构件被配置为使得光导电层的圆筒轴方向的中心部分区域中的氢原子的含量的平均值Hx_ave，中心部分区域中的任意点处的氢原子的含量Hx 在光电导层的端面区域中的氢原子的含量在其圆柱轴方向上的平均值Hy_ave和端部区域任意点处的氢原子的含量Hy满足10 @ Hx_ave @ 30， Hx

10. 发明授权

US08168365B2 Method for manufacturing electrophotographic photosensitive member 有权
标题翻译：电子照相感光构件的制造方法
公开(公告)号：US08168365B2
公开(公告)日：2012-05-01
申请号：US12505698
申请日：2009-07-20
申请人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura
发明人： Tomohito Ozawa , Kazuyoshi Akiyama , Yuu Nishimura
IPC分类号： G03G5/147
CPC分类号： G03G5/08242 , G03G5/08278
摘要： The present invention provides a method for manufacturing an electrophotographic photosensitive member including a step of forming a first surface layer and a second surface layer of the electrophotographic photosensitive member by supplying a source gas into a reaction vessel so that C2/S2, which are respectively flow rates of CH4 and SiH4 flowing when the second surface layer is formed, can be 3 or more and 25 or less, and C1/S1, which are respectively flow rates of CH4 and SiH4 flowing when the first surface layer is formed, can be C2/S2 or more but 60 or less. The method includes an additional step of adjusting the high-frequency power so that P2>P1 can be satisfied, which are high-frequency powers respectively when the second surface layer is formed and when the first surface layer is formed, and C/(Si+C) of the first surface layer and C/(Si+C) of the second surface layer can be 0.50 or more and 0.80 or less.
摘要翻译：本发明提供了一种电子照相感光构件的制造方法，其包括通过将源气体供应到反应容器中来形成电子照相感光构件的第一表面层和第二表面层的步骤，使得分别流过的C2 / S2 当形成第二表面层时流动的CH 4和SiH 4的比率可以是3以上且25以下，分别形成第一表面层时流通的CH4和SiH4的流量的C1 / S1可以是C2 / S2以上且60以下。该方法包括在形成第二表面层时和当形成第一表面层时分别调整高频功率以便可以满足作为高频功率的P2> P1的附加步骤，以及C /（Si + C）和第二表面层的C /（Si + C）可以为0.50以上且0.80以下。

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