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1. 发明申请

US20100159781A1 METHOD OF MANUFACTURING ELECTRON-EMITTING DEVICE AND METHOD OF MANUFACTURING IMAGE DISPLAY APPARATUS 失效
标题翻译：制造电子发射装置的方法和制造图像显示装置的方法
公开(公告)号：US20100159781A1
公开(公告)日：2010-06-24
申请号：US12421780
申请日：2009-04-10
申请人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
发明人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
IPC分类号： H01J9/00 , H01J9/12
CPC分类号： H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.
摘要翻译：一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

2. 发明授权

US07850502B2 Method of manufacturing electron-emitting device and method of manufacturing image display apparatus 失效
标题翻译：制造电子发射器件的方法和制造图象显示装置的方法
公开(公告)号：US07850502B2
公开(公告)日：2010-12-14
申请号：US12421780
申请日：2009-04-10
申请人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
发明人： Yuu Nishimura , Tamaki Kobayashi , Yusuke Miyamoto , Takuto Moriguchi , Eiji Takeuchi , Takahiro Sato
IPC分类号： H01J9/00
CPC分类号： H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： An electron-emitting device manufacturing method includes a first step of forming a conductive film on an insulating layer having an upper surface and a side surface connected to the upper surface via a corner portion so as to extend from the side surface to the upper surface and cover at least a part of the corner portion, and a second step of etching the conductive film in a film thickness direction. At the first step, the conductive film is formed so that film density of the conductive film on the side surface of the insulating layer becomes the same as or higher than film density of the conductive film on the upper portion of the insulating film.
摘要翻译：一种电子发射器件制造方法包括：第一步骤，在绝缘层上形成导电膜，所述绝缘层具有通过角部连接到上表面的上表面和侧表面，以便从侧表面延伸到上表面; 覆盖角部的至少一部分，以及在膜厚度方向上蚀刻导电膜的第二工序。在第一步骤中，形成导电膜，使绝缘层侧面上的导电膜的膜密度与绝缘膜上部的导电膜的膜密度相同或更高。

3. 发明申请

US20090284120A1 ELECTRON EMITTER AND IMAGE DISPLAY APPARATUS 审中-公开
标题翻译：电子发射器和图像显示装置
公开(公告)号：US20090284120A1
公开(公告)日：2009-11-19
申请号：US12430580
申请日：2009-04-27
申请人： Koki Nukanobu , Takahiro Sato , Takuto Moriguchi , Eiji Takeuchi
发明人： Koki Nukanobu , Takahiro Sato , Takuto Moriguchi , Eiji Takeuchi
IPC分类号： H01J1/02
CPC分类号： H01J1/316 , H01J9/027 , H01J2201/3165 , H01J2329/0481 , H01J2329/0489
摘要： An electron emitter retaining a stable electron emission property with minimized fluctuation over a long period of time is provided. Also, a long-life image display apparatus that exhibits little fluctuation over a long period of time, by using electron emitters that retain a stable electron emission property with minimized fluctuation over long period of time is provided.
摘要翻译：提供了保持稳定的电子发射特性的电子发射器，其长时间波动最小化。另外，通过使用长时间保持稳定的电子发射特性和最小化的波动的电子发射体，提供长时间显示很小波动的长寿命图像显示装置。

4. 发明申请

US20100159784A1 METHOD FOR PRODUCING ELECTRON-EMITTING DEVICE AND METHOD FOR PRODUCING IMAGE DISPLAY APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：用于制造电子发射装置的方法和用于生产包括其的图像显示装置的方法
公开(公告)号：US20100159784A1
公开(公告)日：2010-06-24
申请号：US12638270
申请日：2009-12-15
申请人： Hiroshi Tomii , Akira Shimazu , Tamaki Kobayashi , Yusuke Miyamoto , Shin Kitamura , Takahiro Sato
发明人： Hiroshi Tomii , Akira Shimazu , Tamaki Kobayashi , Yusuke Miyamoto , Shin Kitamura , Takahiro Sato
IPC分类号： H01J9/00 , H01J9/12
CPC分类号： H01J1/3046 , H01J9/025 , H01J31/127 , H01J2201/30423 , H01J2329/0423
摘要： A method for producing an electron-emitting device includes forming an electrode above a top surface of an insulation layer including the top surface and a side surface connected to the top surface; forming a first conductive film on the insulation layer so as to be separated from the electrode and extend from the top surface to the side surface; forming a second conductive film on the first conductive film so as to extend from the top surface to the side surface; and etching the second conductive film.
摘要翻译：一种电子发射器件的制造方法，包括在包括上表面的绝缘层的上表面和与顶面连接的侧面上形成电极; 在所述绝缘层上形成第一导电膜，以从所述电极分离并从所述顶表面延伸到所述侧表面; 在所述第一导电膜上形成第二导电膜，以从所述顶表面延伸到所述侧表面; 并蚀刻第二导电膜。

5. 发明授权

US08013509B2 Electron-emitting device, electron source, and image display apparatus, and method for manufacturing the same 失效
标题翻译：电子发射器件，电子源和图像显示装置及其制造方法
公开(公告)号：US08013509B2
公开(公告)日：2011-09-06
申请号：US12297847
申请日：2007-06-29
申请人： Takuto Moriguchi , Koki Nukanobu , Takahiro Sato , Takeo Tsukamoto
发明人： Takuto Moriguchi , Koki Nukanobu , Takahiro Sato , Takeo Tsukamoto
IPC分类号： H01J63/04
CPC分类号： H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165
摘要： A base body includes a first part and a second part. The second part has a lower thermal conductivity than the first part and is arranged adjacently to the first part. A first conductive film is formed on the first part and a second conductive film is formed on the second part. At least part of a gap is located above a boundary between the first part and the second part.
摘要翻译：基体包括第一部分和第二部分。第二部分具有比第一部分更低的热导率并且与第一部分相邻地布置。第一导电膜形成在第一部分上，第二导电膜形成在第二部分上。间隙的至少一部分位于第一部分和第二部分之间的边界上方。

6. 发明申请

US20090237570A1 ELECTRON-EMITTING DEVICE, ELECTRON SOURCE, AND IMAGE DISPLAY APPARATUS, AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：电子发射装置，电子源和图像显示装置及其制造方法
公开(公告)号：US20090237570A1
公开(公告)日：2009-09-24
申请号：US12297847
申请日：2007-06-29
申请人： Takuto Moriguchi , Koki Nukanobu , Takahiro Sato , Takeo Tsukamoto
发明人： Takuto Moriguchi , Koki Nukanobu , Takahiro Sato , Takeo Tsukamoto
IPC分类号： H04N5/44 , H01J1/00 , H01J9/02
CPC分类号： H01J1/316 , H01J9/027 , H01J31/127 , H01J2201/3165
摘要： A base body includes a first part and a second part, The second part has a lower thermal conductivity than the first part and is arranged adjacently to the first part. A first conductive film is formed on the first part and a second conductive film is formed on the second part. At least part of a gap is located above a boundary between the first part and the second part.
摘要翻译：基体包括第一部分和第二部分。第二部分具有比第一部分更低的热导率并且被布置成与第一部分相邻。第一导电膜形成在第一部分上，第二导电膜形成在第二部分上。间隙的至少一部分位于第一部分和第二部分之间的边界上方。

7. 发明授权

US10197302B2 Local air cleaning apparatus 有权
公开(公告)号：US10197302B2
公开(公告)日：2019-02-05
申请号：US14234737
申请日：2012-06-22
申请人： Taketo Suzuki , Tomoyuki Kakinuma , Kozo Nitta , Yuki Fujishiro , Kazuma Fukiura , Takahiro Sato
发明人： Taketo Suzuki , Tomoyuki Kakinuma , Kozo Nitta , Yuki Fujishiro , Kazuma Fukiura , Takahiro Sato
IPC分类号： F24F3/16 , F24F13/068
摘要： A local air cleaning apparatus (1) is provided with a push hood (2) having an air flow opening face (23) for blowing out a cleaned uniform air flow and a guide (3) provided on a side of the push hood (2) having the air flow opening face (23), the guide (3) extending from the side thereof having the air flow opening face (23) toward a downstream side of the uniform air flow to form an opening face (31) at a downstream end portion thereof. The push hood (2) is arranged such that the uniform air flow blown out from the air flow opening face (23) passes through the inside of the guide (3) and then collides with an air collision face (W) on a downstream side of the opening face (31). The opening face (31) of the guide (3) is spaced apart from and opposed to the air collision face (W) to form an open region between the opening face (3) and the air collision face (W). The cleaned uniform air flow blown out from the air flow opening face (23) collides with the air collision face (W) and flows out of the opening region, thereby allowing the inside of the guide (3) and the inside of the open region to have higher cleanliness than other regions.

8. 发明授权

US09827556B2 Catalyst carrier for exhaust gas purification and catalyst for exhaust gas purification 有权
公开(公告)号：US09827556B2
公开(公告)日：2017-11-28
申请号：US14343056
申请日：2012-08-27
申请人： Yuki Nagao , Takahiro Sato , Yunosuke Nakahara , Masato Machida
发明人： Yuki Nagao , Takahiro Sato , Yunosuke Nakahara , Masato Machida
IPC分类号： B01J27/185 , B01J27/18 , B01D53/94 , B01J37/02 , B01J37/03 , B01J37/10
CPC分类号： B01J27/1856 , B01D53/945 , B01D2255/1025 , B01D2255/2061 , B01D2255/2063 , B01J27/1804 , B01J37/0248 , B01J37/03 , B01J37/036 , B01J37/10 , Y02T10/22
摘要： Disclosed is an exhaust gas purification catalyst carrier which includes a phosphate salt represented by formula: MPO4 (wherein M represents Y, La, or Al) or a zirconium phosphate represented by formula ZrP2O7; an exhaust gas purification catalyst containing a noble metal at least containing Rh and supported on the carrier; and an exhaust gas purification catalyst product having a catalyst support made of a ceramic or metallic material, and a layer of the exhaust gas purification catalyst, the layer being supported on the catalyst support.

9. 发明授权

US08974697B2 Luminescent material 有权
标题翻译：发光材料
公开(公告)号：US08974697B2
公开(公告)日：2015-03-10
申请号：US13601070
申请日：2012-08-31
申请人： Keiko Albessard , Masahiro Kato , Yumi Fukuda , Iwao Mitsuishi , Takahiro Sato , Shigeya Kimura , Aoi Okada , Naotoshi Matsuda , Ryosuke Hiramatsu , Yasushi Hattori , Kunio Ishida , Hironori Asai
发明人： Keiko Albessard , Masahiro Kato , Yumi Fukuda , Iwao Mitsuishi , Takahiro Sato , Shigeya Kimura , Aoi Okada , Naotoshi Matsuda , Ryosuke Hiramatsu , Yasushi Hattori , Kunio Ishida , Hironori Asai
IPC分类号： C09K11/59 , C09K11/77 , H05B33/12 , H01L33/50
CPC分类号： C09K11/7734 , H01L33/502 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H05B33/12 , H01L2924/00012 , H01L2924/00014
摘要： According to one embodiment, the luminescent material shows a luminescence peak in a wavelength range of 570 to 670 nm when excited with light having an emission peak in a wavelength range of 250 to 520 nm. The luminescent material includes a host material having a crystal structure substantially same as the crystal structure of Sr2Si7Al3ON13. The host material is activated by Eu, and includes Sr and Ca to satisfy a relationship of 0.008≦MCa/(MSr+MCa)≦0.114, where MCa is a number of moles of Ca and MSr is a number of moles of Sr.
摘要翻译：根据一个实施方案，发光材料在具有在250至520nm的波长范围内的发光峰的光激发时，显示在570至670nm的波长范围内的发光峰。发光材料包括具有与Sr 2 Si 7 Al 3 ON 13的晶体结构基本相同的晶体结构的主体材料。主体材料由Eu活化，包括Sr和Ca，以满足0.008＆nlE的关系; MCa /（MSr + MCa）＆nlE; 0.114，其中MCa是Ca的摩尔数，MSr是Sr的摩尔数。

10. 发明授权

US08921870B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08921870B2
公开(公告)日：2014-12-30
申请号：US13037740
申请日：2011-03-01
申请人： Takahiro Sato , Shinya Nunoue
发明人： Takahiro Sato , Shinya Nunoue
IPC分类号： H01L29/18 , H01L25/075 , H01L33/60
CPC分类号： H01L25/0753 , H01L33/60 , H01L2224/48227 , H01L2224/49107 , H01L2224/73265
摘要： According to one embodiment, a light emitting device includes a base substrate, first and second substrates, first and second semiconductor light emitting elements. The first and second substrates are provided on a major surface of the base substrate and include first and second reflection regions, respectively. The first and second semiconductor light emitting elements include first and second structural bodies including first and second light emitting layers, respectively. Each of the first and second semiconductor light emitting elements is inputted with a power not less than 1 Watt. An area of a face of the first semiconductor light emitting element is S1, and a gap between the first light emitting layer and the first substrate is t1. An area R1 of the first reflection region satisfies a relationship (S1+100t12)≦R1≦(S1+10000t12). A gap L between the first and the second semiconductor light emitting elements satisfies the relationships 100t1≦L≦10000t1.
摘要翻译：根据一个实施例，发光器件包括基底衬底，第一和第二衬底，第一和第二半导体发光元件。第一和第二基板设置在基底基板的主表面上，分别包括第一和第二反射区域。第一和第二半导体发光元件分别包括包括第一和第二发光层的第一和第二结构体。第一和第二半导体发光元件中的每一个都输入不小于1瓦特的功率。第一半导体发光元件的面的面积为S1，第一发光层与第一基板的间隔为t1。第一反射区域的区域R1满足关系（S1 + 100t12）＆nlE; R1＆nlE;（S1 + 10000t12）。第一和第二半导体发光元件之间的间隙L满足关系式100t1＆nlE; L＆nlE; 10000t1。

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