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1. 发明授权

US08045379B2 Semiconductor device that is advantageous in operational environment at high temperatures 失效
标题翻译：在高温操作环境中有利的半导体器件
公开(公告)号：US08045379B2
公开(公告)日：2011-10-25
申请号：US12191060
申请日：2008-08-13
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： G11C16/04
CPC分类号： H01L21/823864 , H01L21/76834 , H01L21/823807 , H01L29/7843
摘要： A semiconductor device includes an N-type insulated-gate field-effect transistor including a first insulating layer that is provided along side walls of a gate electrode, has a negative thermal expansion coefficient, and applies a tensile stress to a channel region of the N-type insulated-gate field-effect transistor. The device also includes a P-type insulated-gate field-effect transistor including a second insulating layer that is provided along side walls of a gate electrode, has a positive thermal expansion coefficient, and applies a compression stress to a channel region of the P-type insulated-gate field-effect transistor.
摘要翻译：半导体器件包括：N型绝缘栅场效应晶体管，其包括沿着栅电极的侧壁设置的第一绝缘层，具有负的热膨胀系数，并且对N的沟道区域施加拉伸应力型绝缘栅场效应晶体管。该器件还包括一个P型绝缘栅场效应晶体管，其包括沿着栅电极的侧壁设置的第二绝缘层，具有正的热膨胀系数，并且对P的沟道区域施加压缩应力型绝缘栅场效应晶体管。

2. 发明申请

US20100148223A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100148223A1
公开(公告)日：2010-06-17
申请号：US12638146
申请日：2009-12-15
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： H01L29/04 , H01L21/04
CPC分类号： H01L21/823807 , H01L21/823878 , H01L29/045 , H01L29/7833 , H01L29/7846
摘要： A semiconductor device includes an insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (110) plane direction, and which has a channel length direction in a direction, and a first element isolation insulation film which is buried in a trench in an element isolation region of the semiconductor substrate and has a positive expansion coefficient, the first element isolation insulation film applying a compressive stress by operation heat to the insulated-gate field-effect transistor in the channel length direction.
摘要翻译：半导体器件包括：绝缘栅场效应晶体管，其设置在具有（110）面方向的元件形成面的半导体衬底上，并且具有<-110>方向的沟道长度方向，以及第一元件隔离绝缘膜，其被埋在半导体衬底的元件隔离区域中的沟槽中并具有正膨胀系数，第一元件隔离绝缘膜通过工作热将压缩应力施加到绝缘栅场效应晶体管中通道长度方向。

3. 发明授权

US07923761B2 Semiconductor device including gate insulation film that is formed of pyroceramics, and method of manufacturing the same 有权
标题翻译：包含由热解陶瓷形成的栅极绝缘膜的半导体装置及其制造方法
公开(公告)号：US07923761B2
公开(公告)日：2011-04-12
申请号：US11332465
申请日：2006-01-17
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： B82B1/00 , B82B3/00 , H01L27/088
CPC分类号： H01L21/02164 , H01L21/02321 , H01L21/28185 , H01L21/28194 , H01L21/28211 , H01L21/2822 , H01L21/31691 , H01L21/32155 , H01L29/511 , H01L29/517 , Y10S977/773 , Y10S977/776 , Y10S977/778 , Y10S977/779 , Y10S977/785
摘要： A semiconductor device includes a gate insulation film that is formed of pyroceramics including an amorphous matrix layer, which is provided on a major surface of a silicon substrate, and crystalline phases lines with a high dielectric constant, which are dispersed in the amorphous matrix layer. The semiconductor device further includes a gate electrode that is provided on the gate insulation film.
摘要翻译：半导体器件包括栅极绝缘膜，该栅极绝缘膜由包含硅基板的主表面上的非晶基质层和分散在非晶基质层中的高介电常数的结晶相线构成。半导体器件还包括设置在栅极绝缘膜上的栅电极。

4. 发明授权

US08338895B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08338895B2
公开(公告)日：2012-12-25
申请号：US12687269
申请日：2010-01-14
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： H01L21/70
CPC分类号： H01L21/823807 , H01L29/7843
摘要： A semiconductor device includes a first insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (110) plane direction, and which has a channel length direction in a direction, a second insulated-gate field-effect transistor which is disposed on the semiconductor substrate, has a channel length direction in the direction, and neighbors the first insulated-gate field-effect transistor in the channel length direction, and a first liner insulation film which is provided in a manner to cover the first and second insulated-gate field-effect transistors, the first liner insulation film including a piezomaterial, having a positive expansion coefficient, and applying a compressive stress by operation heat to the first and second insulated-gate field-effect transistors in the channel length direction.
摘要翻译：半导体器件包括：第一绝缘栅场效应晶体管，其设置在具有沿（110）面方向的元件形成面的半导体基板上，并且具有<-110>方向的沟道长度方向，第二绝缘栅场效应晶体管设置在半导体基板上的绝缘栅场效应晶体管具有沿<-110>方向的沟道长度方向，并且在沟道长度方向上与第一绝缘栅场效应晶体管相邻，并且第一衬垫绝缘膜，其以覆盖第一和第二绝缘栅场效应晶体管的方式设置，第一衬垫绝缘膜包括具有正膨胀系数的压电材料，并且通过操作热施加压缩应力到第一和第二绝缘 - 栅极场效应晶体管的沟道长度方向。

5. 发明授权

US07420840B2 Semiconductor device that is advantageous in operational environment at high temperatures 失效
标题翻译：在高温操作环境中有利的半导体器件
公开(公告)号：US07420840B2
公开(公告)日：2008-09-02
申请号：US11481251
申请日：2006-07-06
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： G11C11/03
CPC分类号： H01L21/823864 , H01L21/76834 , H01L21/823807 , H01L29/7843
摘要： A semiconductor device comprises an N-type insulated-gate field-effect transistor including a first insulating layer that is provided along side walls of a gate electrode, has a negative thermal expansion coefficient, and applies a tensile stress to a channel region of the N-type insulated-gate field-effect transistor. The device also comprises a P-type insulated-gate field-effect transistor including a second insulating layer that is provided along side walls of a gate electrode, has a positive thermal expansion coefficient, and applies a compression stress to a channel region of the P-type insulated-gate field-effect transistor.
摘要翻译：半导体器件包括N型绝缘栅场效应晶体管，其包括沿栅电极的侧壁设置的第一绝缘层，具有负的热膨胀系数，并且对N的沟道区域施加拉伸应力型绝缘栅场效应晶体管。该器件还包括一个P型绝缘栅场效应晶体管，它包括沿着栅电极的侧壁设置的第二绝缘层，具有正的热膨胀系数，并且对P的沟道区域施加压缩应力型绝缘栅场效应晶体管。

6. 发明申请

US20070262391A1 Semiconductor device that is advantageous in complex stress engineering and method of manufacturing the same 有权
标题翻译：在复杂应力工程中有利的半导体器件及其制造方法
公开(公告)号：US20070262391A1
公开(公告)日：2007-11-15
申请号：US11654020
申请日：2007-01-17
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： H01L27/092 , H01L21/336 , H01L29/78
CPC分类号： H01L21/823807 , H01L29/7833 , H01L29/7843
摘要： A semiconductor device according to an embodiment includes an insulated-gate field-effect transistor including a gate insulation film provided on a major surface of a semiconductor substrate, a gate electrode provided on the gate insulation film, and a source and a drain provided spaced apart in the semiconductor substrate such that the gate electrode is interposed between the source and the drain, a first contact wiring line which is provided on the source, a second contact wiring line which is provided on the drain, and a piezoelectric layer which is provided to cover the gate electrode and has one end and the other end connected between the first and second contact wiring lines.
摘要翻译：根据实施例的半导体器件包括绝缘栅场效应晶体管，其包括设置在半导体衬底的主表面上的栅极绝缘膜，设置在栅极绝缘膜上的栅电极和间隔开设置的源极和漏极在所述半导体基板中使得所述栅电极插入在所述源极和漏极之间，设置在所述源极上的第一接触布线，设置在所述漏极上的第二接触布线和压电层，覆盖栅电极并且具有一端，另一端连接在第一和第二接触布线之间。

7. 发明申请

US20070045623A1 Semiconductor device that is advantageous in operational environment at high temperatures 失效
标题翻译：在高温操作环境中有利的半导体器件
公开(公告)号：US20070045623A1
公开(公告)日：2007-03-01
申请号：US11481251
申请日：2006-07-06
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： H01L29/10
CPC分类号： H01L21/823864 , H01L21/76834 , H01L21/823807 , H01L29/7843
摘要： A semiconductor device comprises an N-type insulated-gate field-effect transistor including a first insulating layer that is provided along side walls of a gate electrode, has a negative thermal expansion coefficient, and applies a tensile stress to a channel region of the N-type insulated-gate field-effect transistor. The device also comprises a P-type insulated-gate field-effect transistor including a second insulating layer that is provided along side walls of a gate electrode, has a positive thermal expansion coefficient, and applies a compression stress to a channel region of the P-type insulated-gate field-effect transistor.
摘要翻译：半导体器件包括N型绝缘栅场效应晶体管，其包括沿栅电极的侧壁设置的第一绝缘层，具有负的热膨胀系数，并且对N的沟道区域施加拉伸应力型绝缘栅场效应晶体管。该器件还包括一个P型绝缘栅场效应晶体管，它包括沿着栅电极的侧壁设置的第二绝缘层，具有正的热膨胀系数，并且对P的沟道区域施加压缩应力型绝缘栅场效应晶体管。

8. 发明申请

US20080315316A1 SEMICONDUCTOR DEVICE THAT IS ADVANTAGEOUS IN OPERATIONAL ENVIRONMENT AT HIGH TEMPERATURES 失效
标题翻译：在高温运行环境中具有优势的半导体器件
公开(公告)号：US20080315316A1
公开(公告)日：2008-12-25
申请号：US12191060
申请日：2008-08-13
申请人： Zhengwu JIN
发明人： Zhengwu JIN
IPC分类号： H01L21/8234 , H01L27/088
CPC分类号： H01L21/823864 , H01L21/76834 , H01L21/823807 , H01L29/7843
摘要： A semiconductor device comprises an N-type insulated-gate field-effect transistor including a first insulating layer that is provided along side walls of a gate electrode, has a negative thermal expansion coefficient, and applies a tensile stress to a channel region of the N-type insulated-gate field-effect transistor. The device also comprises a P-type insulated-gate field-effect transistor including a second insulating layer that is provided along side walls of a gate electrode, has a positive thermal expansion coefficient, and applies a compression stress to a channel region of the P-type insulated-gate field-effect transistor.
摘要翻译：半导体器件包括N型绝缘栅场效应晶体管，其包括沿栅电极的侧壁设置的第一绝缘层，具有负的热膨胀系数，并且对N的沟道区域施加拉伸应力型绝缘栅场效应晶体管。该器件还包括一个P型绝缘栅场效应晶体管，它包括沿着栅电极的侧壁设置的第二绝缘层，具有正的热膨胀系数，并且对P的沟道区域施加压缩应力型绝缘栅场效应晶体管。

9. 发明授权

US08975702B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08975702B2
公开(公告)日：2015-03-10
申请号：US12638146
申请日：2009-12-15
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： H01L21/70 , H01L21/8238 , H01L29/04 , H01L29/78
CPC分类号： H01L21/823807 , H01L21/823878 , H01L29/045 , H01L29/7833 , H01L29/7846
摘要： A semiconductor device includes an insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (110) plane direction, and which has a channel length direction in a direction, and a first element isolation insulation film which is buried in a trench in an element isolation region of the semiconductor substrate and has a positive expansion coefficient, the first element isolation insulation film applying a compressive stress by operation heat to the insulated-gate field-effect transistor in the channel length direction.
摘要翻译：半导体器件包括：绝缘栅场效应晶体管，其设置在具有（110）面方向的元件形成面的半导体衬底上，并且具有<-110>方向的沟道长度方向，以及第一元件隔离绝缘膜，其被埋在半导体衬底的元件隔离区域中的沟槽中并具有正膨胀系数，第一元件隔离绝缘膜通过工作热将压缩应力施加到绝缘栅场效应晶体管中通道长度方向。

10. 发明申请

US20100176457A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100176457A1
公开(公告)日：2010-07-15
申请号：US12687269
申请日：2010-01-14
申请人： Zhengwu Jin
发明人： Zhengwu Jin
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L29/7843
摘要： A semiconductor device includes a first insulated-gate field-effect transistor which is disposed on a semiconductor substrate having an element formation plane in a (110) plane direction, and which has a channel length direction in a direction, a second insulated-gate field-effect transistor which is disposed on the semiconductor substrate, has a channel length direction in the direction, and neighbors the first insulated-gate field-effect transistor in the channel length direction, and a first liner insulation film which is provided in a manner to cover the first and second insulated-gate field-effect transistors, the first liner insulation film including a piezomaterial, having a positive expansion coefficient, and applying a compressive stress by operation heat to the first and second insulated-gate field-effect transistors in the channel length direction.
摘要翻译：半导体器件包括：第一绝缘栅场效应晶体管，其设置在具有沿（110）面方向的元件形成面的半导体基板上，并且具有<-110>方向的沟道长度方向，第二绝缘栅场效应晶体管设置在半导体基板上的绝缘栅场效应晶体管具有沿<-110>方向的沟道长度方向，并且在沟道长度方向上与第一绝缘栅场效应晶体管相邻，并且第一衬垫绝缘膜，其以覆盖第一和第二绝缘栅场效应晶体管的方式设置，第一衬垫绝缘膜包括具有正膨胀系数的压电材料，并且通过操作热施加压缩应力到第一和第二绝缘 - 栅极场效应晶体管的沟道长度方向。

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