专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20140183684A1 PHOTODETECTOR ARRAY AND METHOD OF MANUFACTURE 有权
标题翻译：光电子阵列和制造方法
公开(公告)号：US20140183684A1
公开(公告)日：2014-07-03
申请号：US13609136
申请日：2012-09-10
申请人： Ziraddin Yagub-Ogly Sadygov , Abdelmounaime Faouzi Zerrouk , Azar Sadygov , Azman Ariffin , Serge Khorev
发明人： Ziraddin Yagub-Ogly Sadygov , Abdelmounaime Faouzi Zerrouk , Azar Sadygov , Azman Ariffin , Serge Khorev
IPC分类号： H01L27/144 , H01L31/107
CPC分类号： H01L27/1446 , H01L31/107
摘要： The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.
摘要翻译：本发明涉及包括包含面导电区域（焊盘）阵列的电介质结构的光电二极管阵列。每个光电二极管彼此完全分离。每个光电二极管具有形成在半导体衬底的敏感侧上的面电极和形成在相对侧的单个背电极。电介质结构上的导电面积数量等于阵列中的光电二极管的数量。阵列的光电二极管安装在导电区域上，使得它们的背电极与相应的导电区域电接触。每个导电区域包含至少一个独立的导电孔，其从电介质结构的正面到相对侧穿过电介质封装。进入电介质结构背面的导电孔与介电封装背面形成的背导电区相连。

2. 发明授权

US09917118B2 Photodetector array and method of manufacture 有权
公开(公告)号：US09917118B2
公开(公告)日：2018-03-13
申请号：US13609136
申请日：2012-09-10
申请人： Ziraddin Yagub-Ogly Sadygov , Abdelmounaime Faouzi Zerrouk , Azar Sadygov , Azman Mohd Ariffin , Serge Khorev
发明人： Ziraddin Yagub-Ogly Sadygov , Abdelmounaime Faouzi Zerrouk , Azar Sadygov , Azman Mohd Ariffin , Serge Khorev
IPC分类号： H01L27/144 , H01L31/107
CPC分类号： H01L27/1446 , H01L31/107
摘要： The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.

3. 发明授权

US08742543B2 Microchannel avalanche photodiode (variants) 有权
标题翻译：微通道雪崩光电二极管（变体）
公开(公告)号：US08742543B2
公开(公告)日：2014-06-03
申请号：US12034603
申请日：2008-02-20
申请人： Ziraddin Yagub-Ogly Sadygov , Abdelmounairne Faouzi Zerrouk
发明人： Ziraddin Yagub-Ogly Sadygov , Abdelmounairne Faouzi Zerrouk
IPC分类号： H01L31/00
CPC分类号： H01L31/107 , H01L31/028 , H01L31/035272 , H01L31/03529 , Y02E10/50
摘要： The invention is directed to an avalanche photodiode containing a substrate and semiconductor layers with various electro-physical properties having common interfaces both between themselves and with the substrate. The avalanche photodiode may be characterized by the presence in the device of at least one matrix consisting of separate solid-state areas with enhanced conductivity surrounded by semiconductor material with the same type of conductivity. The solid-state areas are located between two additional semiconductor layers, which have higher conductivity in comparison to the semiconductor layers with which they have common interfaces. The solid-state areas are generally made of the same material as the semiconductor layers surrounding them but with conductivity type that is opposite with respect to them. The solid-state areas may be made of a semiconductor with a narrow forbidden zone with respect to the semiconductor layers with which they have common interfaces.
摘要翻译：本发明涉及一种含有基板的雪崩光电二极管和具有各自的电 - 物理性质的半导体层，它们在它们之间和衬底之间具有共同的界面。雪崩光电二极管的特征在于在器件中存在由具有相同类型导电性的半导体材料围绕的具有增强的导电性的单独的固态区域组成的至少一个矩阵。固态区域位于两个附加半导体层之间，与其具有共同接口的半导体层相比，其具有更高的导电性。固态区域通常由与其周围的半导体层相同的材料制成，但是具有与它们相反的导电类型。固态区域可以由相对于它们具有共同接口的半导体层的具有窄禁区的半导体制成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式