会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • PHOTODETECTOR ARRAY AND METHOD OF MANUFACTURE
    • 光电子阵列和制造方法
    • US20140183684A1
    • 2014-07-03
    • US13609136
    • 2012-09-10
    • Ziraddin Yagub-Ogly SadygovAbdelmounaime Faouzi ZerroukAzar SadygovAzman AriffinSerge Khorev
    • Ziraddin Yagub-Ogly SadygovAbdelmounaime Faouzi ZerroukAzar SadygovAzman AriffinSerge Khorev
    • H01L27/144H01L31/107
    • H01L27/1446H01L31/107
    • The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.
    • 本发明涉及包括包含面导电区域(焊盘)阵列的电介质结构的光电二极管阵列。 每个光电二极管彼此完全分离。 每个光电二极管具有形成在半导体衬底的敏感侧上的面电极和形成在相对侧的单个背电极。 电介质结构上的导电面积数量等于阵列中的光电二极管的数量。 阵列的光电二极管安装在导电区域上,使得它们的背电极与相应的导电区域电接触。 每个导电区域包含至少一个独立的导电孔,其从电介质结构的正面到相对侧穿过电介质封装。 进入电介质结构背面的导电孔与介电封装背面形成的背导电区相连。
    • 4. 发明申请
    • DEPTH-OF-INTERACTION SCINTILLATION DETECTORS
    • 深度相互作用的扫描检测器
    • US20120061577A1
    • 2012-03-15
    • US13232944
    • 2011-09-14
    • Alexei OleinikAlexander ZagumennyiSerge KhorevAbdelmounaime Faouzi Zerrouk
    • Alexei OleinikAlexander ZagumennyiSerge KhorevAbdelmounaime Faouzi Zerrouk
    • G01T1/202
    • G01T1/202G01T1/2002G01T1/2018
    • The invention disclosed herein relates to a scintillation detector for registering the position of gamma photon interactions, an comprises an array of two or more elongated first and second scintillation crystal elements connected together along their respective long sides, and an array of discrete photosensitive areas disposed on a common substrate of a solid-state semiconductor photo-detector. The array of first and second scintillation crystal elements have proximal output windows optically coupled to the array of discrete photosensitive areas in a one-to-one relationship. The invention may be characterized in that the first and second scintillation crystal elements include a rooftop portion at their distal ends, wherein the rooftop portion optically couples one of the first and second scintillation crystal elements to the other and is configured to reflect and transmit light resulting from a gamma photon interaction from one of the first and second scintillation crystal elements to the other.
    • 本文公开的本发明涉及用于记录γ光子相互作用的位置的闪烁检测器,包括沿其相应的长边连接在一起的两个或更多个细长的第一和第二闪烁晶体元件的阵列,以及设置在 固体半导体光检测器的公共基板。 第一和第二闪烁晶体元件的阵列具有以一对一关系光学耦合到离散感光区阵列的近端输出窗口。 本发明的特征在于,第一和第二闪烁晶体元件在其远端包括屋顶部分,其中屋顶部分将第一和第二闪烁晶体元件中的一个光学地耦合到另一个,并被配置为反射和透射光 来自第一和第二闪烁晶体元件之一的γ光子相互作用。