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1. 发明申请

US20140183684A1 PHOTODETECTOR ARRAY AND METHOD OF MANUFACTURE 有权
标题翻译：光电子阵列和制造方法
公开(公告)号：US20140183684A1
公开(公告)日：2014-07-03
申请号：US13609136
申请日：2012-09-10
申请人： Ziraddin Yagub-Ogly Sadygov , Abdelmounaime Faouzi Zerrouk , Azar Sadygov , Azman Ariffin , Serge Khorev
发明人： Ziraddin Yagub-Ogly Sadygov , Abdelmounaime Faouzi Zerrouk , Azar Sadygov , Azman Ariffin , Serge Khorev
IPC分类号： H01L27/144 , H01L31/107
CPC分类号： H01L27/1446 , H01L31/107
摘要： The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.
摘要翻译：本发明涉及包括包含面导电区域（焊盘）阵列的电介质结构的光电二极管阵列。每个光电二极管彼此完全分离。每个光电二极管具有形成在半导体衬底的敏感侧上的面电极和形成在相对侧的单个背电极。电介质结构上的导电面积数量等于阵列中的光电二极管的数量。阵列的光电二极管安装在导电区域上，使得它们的背电极与相应的导电区域电接触。每个导电区域包含至少一个独立的导电孔，其从电介质结构的正面到相对侧穿过电介质封装。进入电介质结构背面的导电孔与介电封装背面形成的背导电区相连。

2. 发明授权

US09917118B2 Photodetector array and method of manufacture 有权
公开(公告)号：US09917118B2
公开(公告)日：2018-03-13
申请号：US13609136
申请日：2012-09-10
申请人： Ziraddin Yagub-Ogly Sadygov , Abdelmounaime Faouzi Zerrouk , Azar Sadygov , Azman Mohd Ariffin , Serge Khorev
发明人： Ziraddin Yagub-Ogly Sadygov , Abdelmounaime Faouzi Zerrouk , Azar Sadygov , Azman Mohd Ariffin , Serge Khorev
IPC分类号： H01L27/144 , H01L31/107
CPC分类号： H01L27/1446 , H01L31/107
摘要： The present invention is directed to photodiode arrays comprising a dielectric structure containing an array of face conductive areas (pads) and. Each photodiode is fully separated from each other. Every photodiode has a face electrode formed on sensitive side of the semiconductor substrate and an individual back electrode formed on the opposite side. The number of conductive areas on the dielectric structure is equal to number of photodiodes in the array. The photodiodes of the array are installed on the conductive areas so that their back electrodes have electrical contact with the corresponding conductive area. Each conductive area contains at least one individual conductive hole penetrating the dielectric package from the face side to the opposite side of the dielectric structure. The conductive holes going to backside of the dielectric structure are connected with the back conductive areas formed on back side of dielectric package.

3. 发明申请

US20110064112A1 SOLID-STATE LASER WITH WAVEGUIDE PUMP PATH (Z PUMP) 审中-公开
标题翻译：具有波导泵路径的固态激光器（Z泵）
公开(公告)号：US20110064112A1
公开(公告)日：2011-03-17
申请号：US12881033
申请日：2010-09-13
申请人： Alexandre Oumiskov , Serge Khorev , Abdelmounaime Faouzi Zerrouk
发明人： Alexandre Oumiskov , Serge Khorev , Abdelmounaime Faouzi Zerrouk
IPC分类号： H01S3/091
CPC分类号： H01S3/09415 , H01S3/0405 , H01S3/0606 , H01S3/0612 , H01S3/08072 , H01S3/08095 , H01S3/094057 , H01S3/0941 , H01S5/4012 , H01S5/4031
摘要： Output beam from laser diode bar (1) has divergence around 40 degrees along the fast axis and around 12 degrees along the slow one. The quality of such a beam along the fast axis is good and fast axis collimating lens (FAC) (2) can compensate its high divergence down to 0.5-1 degrees. In the direction of the slow axis the beam from the laser diode bar is focused by cylindrical lens (3) onto the pumping face of laser active medium (5). The pumping face is wider than the pumping spot on it to ensure efficient collection of pumping light. Laser active medium has two parallel faces which form a waveguide for the pumping light. As a result, the pumping light is confined within the waveguide along the slow-axis direction and collimated (near parallel) in the fast-axis direction. Therefore, length of the pump volume (6) can be as long as the laser element itself.
摘要翻译：来自激光二极管条（1）的输出光束沿着快轴具有大约40度的偏差，并且沿缓慢的发散约12度。沿着快轴的这种光束的质量是好的，快轴准直透镜（FAC）（2）可以将其高发散度补偿到0.5-1度。在慢轴的方向上，来自激光二极管条的光束由柱面透镜（3）聚焦到激光活性介质（5）的泵浦面上。泵送面比其上的抽吸点宽，以确保有效地收集泵浦光。激光活性介质具有两个平行的面，其形成用于泵浦光的波导。结果，泵浦光沿着慢轴方向被限制在波导内，并且在快轴方向准直（近似平行）。因此，泵体积（6）的长度可以与激光元件本身一样长。

4. 发明申请

US20120061577A1 DEPTH-OF-INTERACTION SCINTILLATION DETECTORS 审中-公开
标题翻译：深度相互作用的扫描检测器
公开(公告)号：US20120061577A1
公开(公告)日：2012-03-15
申请号：US13232944
申请日：2011-09-14
申请人： Alexei Oleinik , Alexander Zagumennyi , Serge Khorev , Abdelmounaime Faouzi Zerrouk
发明人： Alexei Oleinik , Alexander Zagumennyi , Serge Khorev , Abdelmounaime Faouzi Zerrouk
IPC分类号： G01T1/202
CPC分类号： G01T1/202 , G01T1/2002 , G01T1/2018
摘要： The invention disclosed herein relates to a scintillation detector for registering the position of gamma photon interactions, an comprises an array of two or more elongated first and second scintillation crystal elements connected together along their respective long sides, and an array of discrete photosensitive areas disposed on a common substrate of a solid-state semiconductor photo-detector. The array of first and second scintillation crystal elements have proximal output windows optically coupled to the array of discrete photosensitive areas in a one-to-one relationship. The invention may be characterized in that the first and second scintillation crystal elements include a rooftop portion at their distal ends, wherein the rooftop portion optically couples one of the first and second scintillation crystal elements to the other and is configured to reflect and transmit light resulting from a gamma photon interaction from one of the first and second scintillation crystal elements to the other.
摘要翻译：本文公开的本发明涉及用于记录γ光子相互作用的位置的闪烁检测器，包括沿其相应的长边连接在一起的两个或更多个细长的第一和第二闪烁晶体元件的阵列，以及设置在固体半导体光检测器的公共基板。第一和第二闪烁晶体元件的阵列具有以一对一关系光学耦合到离散感光区阵列的近端输出窗口。本发明的特征在于，第一和第二闪烁晶体元件在其远端包括屋顶部分，其中屋顶部分将第一和第二闪烁晶体元件中的一个光学地耦合到另一个，并被配置为反射和透射光来自第一和第二闪烁晶体元件之一的γ光子相互作用。

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