会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Method and structure of MEMS WLCSP fabrication
    • MEMS WLCSP制作的方法和结构
    • US09540232B2
    • 2017-01-10
    • US14507177
    • 2014-10-06
    • mCube Inc.
    • Chien Chen Lee
    • B81C1/00
    • B81C1/00301B81B2201/0235B81B2201/0242B81B2201/0257B81B2201/0264B81C2203/0109B81C2203/0154
    • A method for fabricating a MEMS-IC device structure can include receiving a CMOS substrate comprising a plurality of CMOS circuits and a surface portion. A MEMS substrate having at least one MEMS device can be received and coupled to the CMOS substrate. The MEMS substrate and the surface portion of the CMOS substrate can be encapsulated with a molding material, which forms a top surface. A first plurality of vias can be created in the molding material from the top surface to the surface portion of the CMOS substrate. A conductive material can be disposed within the first plurality of vias such that the conductive material is electrically coupled to a portion of the CMOS substrate. A plurality of interconnects can be formed from the conductive material to the top surface of the molding material and a plurality of solder balls can be formed upon these interconnects.
    • 制造MEMS-IC器件结构的方法可以包括接收包括多个CMOS电路和表面部分的CMOS衬底。 具有至少一个MEMS器件的MEMS衬底可被接收并耦合到CMOS衬底。 MEMS衬底和CMOS衬底的表面部分可以用形成顶表面的成型材料封装。 可以在模制材料中从CMOS衬底的顶表面到表面部分形成第一多个通孔。 导电材料可以设置在第一多个通孔内,使得导电材料电耦合到CMOS衬底的一部分。 可以从导电材料形成多个互连件到模制材料的顶表面,并且可以在这些互连件上形成多个焊球。
    • 10. 发明授权
    • Integrated MEMs inertial sensing device with automatic gain control
    • 集成MEM惯性感应装置,具有自动增益控制
    • US09513122B2
    • 2016-12-06
    • US14158756
    • 2014-01-17
    • mCube Inc.
    • Ali J. RastegarSanjay Bhandari
    • G01C19/5776
    • G01C19/5776
    • An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.
    • 集成MEMS惯性感测装置可以包括具有覆盖在CMOS IC衬底上的驱动环配置的MEMS惯性传感器。 CMOS IC衬底可以包括耦合到MEMS惯性传感器的AGC环路电路。 AGC环路的作用方式使得从驱动信号中产生的期望信号幅度将MEMS谐振器速度保持在期望的频率和幅度。 AGC环路的优点是HV驱动器的电荷泵固有地包括用于充电其输出电压的“时间常数”。 这将低通功能集成到AGC环路中,无需额外的电路。