专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10217650B2 Methods and apparatus for substrate edge cleaning 有权
公开(公告)号：US10217650B2
公开(公告)日：2019-02-26
申请号：US15264082
申请日：2016-09-13
申请人： APPLIED MATERIALS, INC.
发明人： James Matthew Holden , Song-Moon Suh , Todd Egan , Kalyanjit Ghosh , Leon Volfovski , Michael R. Rice , Richard Giljum
IPC分类号： B08B7/00 , H01L21/67 , H01L21/02 , B01D39/12 , B08B5/00
摘要： A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body.

2. 发明授权

US10112259B2 Damage isolation by shaped beam delivery in laser scribing process 有权
公开(公告)号：US10112259B2
公开(公告)日：2018-10-30
申请号：US14684290
申请日：2015-04-10
申请人： APPLIED MATERIALS, INC.
发明人： James M. Holden , Nir Merry , Todd Egan
IPC分类号： B23K26/06 , B23K26/00 , B23K26/36 , H01L21/67 , H01J37/32 , H01L21/3065 , H01L21/78 , B23K26/364 , B23K26/0622 , B23K26/40 , B23K103/16 , B23K103/00
摘要： Methods and apparatuses for dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating by a laser beam with a centrally peaked spatial power profile to form an ablated trench in the substrate below thin film device layers which is positively sloped. In an embodiment, a femtosecond laser forms a positively sloped ablation profile which facilitates vertically-oriented propagation of microcracks in the substrate at the ablated trench bottom. With minimal lateral runout of microcracks, a subsequent anisotropic plasma etch removes the microcracks for a cleanly singulated chip with good reliability.

3. 发明授权

US09620379B2 Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch 有权
公开(公告)号：US09620379B2
公开(公告)日：2017-04-11
申请号：US14775651
申请日：2014-03-11
申请人： APPLIED MATERIALS, INC.
发明人： Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/67 , H01L21/78 , H01L21/308 , H01L21/3065 , B23K26/364 , B23K26/40 , B23K26/402 , H01L21/673 , H01L21/687 , H01L21/82 , B23K103/16 , B23K103/00
CPC分类号： H01L21/3086 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , B23K2103/56 , H01L21/3065 , H01L21/30655 , H01L21/3081 , H01L21/3085 , H01L21/67069 , H01L21/67196 , H01L21/67207 , H01L21/67383 , H01L21/68707 , H01L21/78 , H01L21/82
摘要： Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.

4. 发明申请

US20160181134A1 MONITORING SYSTEM FOR DEPOSITION AND METHOD OF OPERATION THEREOF 有权
标题翻译：沉积监测系统及其操作方法
公开(公告)号：US20160181134A1
公开(公告)日：2016-06-23
申请号：US14839656
申请日：2015-08-28
申请人： Applied Materials, Inc.
发明人： Edward W. Budiarto , Majeed A. Foad , Ralf Hofmann , Thomas Nowak , Todd Egan , Mehdi Vaez-Iravani
IPC分类号： H01L21/67 , H01L21/02 , H01L21/285 , H01L21/66 , H01L21/033
CPC分类号： H01L21/67253 , G03F1/22 , G03F1/24 , H01L21/02631 , H01L21/0332 , H01L21/0337 , H01L21/2855 , H01L22/12 , H01L22/26
摘要： A monitoring and deposition control system and method of operation thereof including: a deposition chamber for depositing a material layer on a substrate; a sensor array for monitoring deposition of the material layer for changes in a layer thickness of the material layer during deposition; and a processing unit for adjusting deposition parameters based on the changes in the layer thickness during deposition.
摘要翻译：一种监测和沉积控制系统及其操作方法，包括：沉积室，用于在基板上沉积材料层; 传感器阵列，用于监测材料层的沉积，用于在沉积期间材料层的层厚度的变化; 以及用于基于沉积期间的层厚度的变化来调整沉积参数的处理单元。

5. 发明授权

US08969177B2 Laser and plasma etch wafer dicing with a double sided UV-curable adhesive film 有权
标题翻译：激光和等离子体蚀刻晶片切割与双面UV固化粘合膜
公开(公告)号：US08969177B2
公开(公告)日：2015-03-03
申请号：US13917568
申请日：2013-06-13
申请人： Applied Materials, Inc.
发明人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78 , B23K26/36 , H01L21/67 , B23K26/06 , B23K26/18 , B23K26/40
CPC分类号： H01L21/67155 , B23K26/0624 , B23K26/0661 , B23K26/18 , B23K26/361 , B23K26/40 , B23K2101/40 , B23K2103/172 , B23K2103/50 , H01L21/67069 , H01L21/67115 , H01L21/67207 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/68381
摘要： Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate.
摘要翻译：激光和等离子体蚀刻晶圆切割使用紫外光固化粘合膜。形成覆盖在晶片上形成的IC的掩模，以及提供与IC的接口的任何凸块。半导体晶片通过双面UV固化粘合剂膜耦合到载体基板。通过激光划线将掩模图案化以提供具有间隙的图案化掩模。图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以对IC进行单片化。 UV固化粘合剂膜通过载体的UV照射部分固化。然后将分离的IC从仍然附着到载体基底上的部分固化的粘合剂膜分离，例如通过拾取和放置机单独分离。然后可以进一步固化可UV固化的粘合剂膜，以使膜完全从载体基材上除去。

6. 发明授权

US11441992B2 Method and apparatus for detection of particle size in a fluid 有权
公开(公告)号：US11441992B2
公开(公告)日：2022-09-13
申请号：US16885257
申请日：2020-05-27
申请人： Applied Materials, Inc.
发明人： Mehdi Vaez-Iravani , Todd Egan , Guoheng Zhao
IPC分类号： G01N15/02 , G01N15/14 , G01N15/00
摘要： Examples disclosed herein generally relate to systems and methods for detecting the size of a particle in a fluid. In one example, a system for imaging a particle includes a first imaging device. The first imaging device includes a lens and a digital detector. The system further includes a laser source. He laser source is configured to emit a first laser beam and a second laser beam. The digital detector is configured to accumulate a metric of an intensity of an accumulated light that passes through the lens. The accumulated light is scattered from the particle. The accumulated light includes light from the first laser beam and the second laser beam.

7. 发明授权

US10923371B2 Metrology system for substrate deformation measurement 有权
公开(公告)号：US10923371B2
公开(公告)日：2021-02-16
申请号：US16079961
申请日：2017-03-30
申请人： Applied Materials, Inc.
发明人： Mehdi Vaez-Iravani , Todd Egan , Samer Banna , Kyle Tantiwong
IPC分类号： G06K9/00 , H01L21/67 , G01B11/24 , G01B11/30 , H01L21/66 , G01N21/956 , G06T7/00
摘要： Embodiments of the disclosure provide methods and system for inspecting and treating a substrate. In one embodiment, a method is provided including transmitting a first plurality of beams from a diffractive beam splitter to a first surface of a substrate to generate a reflection of a second plurality of beams, wherein the first plurality of beams are spaced apart from each other upon arriving at the first surface of the substrate; receiving the second plurality of beams on a recording surface of an optical device, wherein the second plurality of beams are spaced apart from each other upon arriving at the recording surface; measuring positional information of the second plurality of beams on the recording surface; comparing the positional information of the second plurality of beams to positional information stored in a memory; and storing a result of the comparison in the memory.

8. 发明授权

US10527407B2 In-situ metrology method for thickness measurement during PECVD processes 有权
公开(公告)号：US10527407B2
公开(公告)日：2020-01-07
申请号：US16356317
申请日：2019-03-18
申请人： Applied Materials, Inc.
发明人： Khokan C. Paul , Edward Budiarto , Todd Egan , Mehdi Vaez-Iravani , Jeongmin Lee , Dale R. Du Bois , Terrance Y. Lee
IPC分类号： G01B11/06 , H01L21/66 , G01B7/06 , C23C16/52 , C23C16/509 , H01J37/32 , H01L21/67
摘要： Embodiments of the present disclosure relate to apparatus and methods for forming films having uniformity of thickness on substrates. Embodiments of the present disclosure may be used to measure thickness or other properties of films being deposited on a substrate without knowing beforehand the surface properties of the substrate. Embodiments of the present disclosure may be used to measure thickness or other properties of a plurality of layers being formed. For example, embodiments of the present disclosure may be used in measuring thickness of vertical memory stacks.

9. 发明授权

US09252057B2 Laser and plasma etch wafer dicing with partial pre-curing of UV release dicing tape for film frame wafer application 有权
标题翻译：激光和等离子体蚀刻晶片切割，部分预固化用于膜框架晶片应用的UV释放切割胶带
公开(公告)号：US09252057B2
公开(公告)日：2016-02-02
申请号：US14052085
申请日：2013-10-11
申请人： APPLIED MATERIALS, INC.
发明人： Mohammad Kamruzzaman Chowdhury , Wei-Sheng Lei , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/82 , H01L21/67 , H01L21/78 , H01L21/683
CPC分类号： H01L21/82 , H01L21/67207 , H01L21/6836 , H01L21/78 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834 , H01L2221/68381
摘要： Methods and systems of laser and plasma etch wafer dicing using UV-curable adhesive films. A method includes forming a mask covering ICs formed on the wafer. The semiconductor wafer is coupled to a film frame by a UV-curable adhesive film. A pre-cure of the UV-curable adhesive film cures a peripheral portion of the adhesive extending beyond an edge of the wafer to improve the exposed adhesive material's resistance to plasma etch and reduce hydrocarbon redeposition within the etch chamber. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the ICs. A center portion of the UV-curable adhesive is then cured and the singulated ICs detached from the film.
摘要翻译：使用UV固化粘合剂膜的激光和等离子体蚀刻晶片切割的方法和系统。一种方法包括形成覆盖在晶片上形成的IC的掩模。半导体晶片通过UV固化粘合剂膜耦合到膜框架。紫外线固化粘合剂膜的预固化固化了延伸超过晶片边缘的粘合剂的周边部分，以改善暴露的粘合材料对等离子体蚀刻的抗性并减少蚀刻室内的烃再沉积。通过激光划线将掩模图案化以提供具有间隙的图案化掩模。图案化使得半导体晶片的区域在形成IC的薄膜层之下露出。通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对IC进行分离。然后固化可UV固化粘合剂的中心部分，并将分离的IC从膜上分离出来。

10. 发明授权

US08946057B2 Laser and plasma etch wafer dicing using UV-curable adhesive film 有权
标题翻译：激光和等离子体蚀刻晶圆切割使用紫外光固化粘合膜
公开(公告)号：US08946057B2
公开(公告)日：2015-02-03
申请号：US13847964
申请日：2013-03-20
申请人： Applied Materials, Inc.
发明人： Wei-Sheng Lei , Mohammad K. Chowdhury , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
IPC分类号： H01L21/00 , H01L21/78 , H01L21/67
CPC分类号： H01L21/78 , H01L21/67069 , H01L21/67207
摘要： Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate.
摘要翻译：描述了使用UV固化粘合剂膜的激光和等离子体蚀刻晶片切割。在一个示例中，一种方法包括在半导体晶片上形成掩模。半导体晶片通过UV可固化粘合剂膜耦合到载体衬底。面罩覆盖并保护集成电路。用激光划线工艺对掩模进行图案化以提供具有间隙的图案化掩模。图案化使得集成电路之间的半导体晶片的区域露出。然后通过图案化掩模中的间隙蚀刻半导体晶片，以形成单独的集成电路。然后用紫外线（UV）光照射UV固化粘合剂膜。然后将分离的集成电路从载体衬底分离。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式