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1. 发明授权

US11629407B2 Substrate processing apparatus and method for processing substrates 有权
公开(公告)号：US11629407B2
公开(公告)日：2023-04-18
申请号：US16797346
申请日：2020-02-21
申请人： ASM IP Holding B.V.
发明人： Dieter Pierreux , Werner Knaepen , Bert Jongbloed , Jeroen Fluit
IPC分类号： C23C16/48 , C23C16/455 , C23C16/44 , C23C16/458
摘要： The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

2. 发明申请

US20220162751A1 SUBSTRATE PROCESSING APPARATUS WITH AN INJECTOR 有权
公开(公告)号：US20220162751A1
公开(公告)日：2022-05-26
申请号：US17530161
申请日：2021-11-18
申请人： ASM IP Holding B.V.
发明人： Kornelius Haanstra , Lucian C. Jdira , Chris G.M. de Ridder , Robin Roelofs , Werner Knaepen , Herbert Terhorst
IPC分类号： C23C16/455 , H01L21/673 , H01L21/687 , C23C16/458
摘要： A substrate processing apparatus having a tube, a closed liner lining the interior surface of the tube, a plurality of gas injectors to provide a gas to an inner space of the liner, and, a gas exhaust duct to remove gas from the inner space is disclosed. The liner may have a substantially cylindrical wall delimited by a liner opening at a lower end and being substantially closed for gases above the liner opening. The apparatus may have a boat constructed and arranged moveable into the inner space via the liner opening and provided with a plurality of substrate holders for holding a plurality of substrates over a substrate support length in the inner space. Each of the gas injectors may have a single exit opening at the top and the exit openings of the plurality of injectors are substantially equally divided over the substrate support length.

3. 发明申请

US20210407789A1 METHOD FOR FORMING A LAYER PROVIDED WITH SILICON 有权
公开(公告)号：US20210407789A1
公开(公告)日：2021-12-30
申请号：US17352555
申请日：2021-06-21
申请人： ASM IP Holding B.V.
发明人： Dieter Pierreux , Steven van Aerde , Bert Jongbloed , Kelly Houben , Werner Knaepen , Wilco Verweij
IPC分类号： H01L21/02 , H01L27/11582
摘要： A method for forming layers with silicon is disclosed. The layers may be created by positioning a substrate within a processing chamber, heating the substrate to a first temperature between 300 and 500° C. and introducing a first precursor into the processing chamber to deposit a first layer. The substrate may be heated to a second temperature between 400 and 600° C.; and, a second precursor may be introduced into the processing chamber to deposit a second layer. The first and second precursor may comprise silicon atoms and the first precursor may have more silicon atoms per molecule than the second precursor.

4. 发明申请

US20210371978A1 SYSTEM AND METHODS FOR DIRECT LIQUID INJECTION OF VANADIUM PRECURSORS 有权
公开(公告)号：US20210371978A1
公开(公告)日：2021-12-02
申请号：US17329829
申请日：2021-05-25
申请人： ASM IP HOLDING B.V.
发明人： Eric James Shero , Dieter Pierreux , Bert Jongbloed , Werner Knaepen , Charles Dezelah , Qi Xie , Petri Raisanen , Hannu A. Huotari , Paul Ma , Vamsi Paruchuri
IPC分类号： C23C16/455 , C23C16/34
摘要： Direct liquid injection systems and vapor deposition systems including direct liquid injection systems are disclosed. Exemplary direct liquid injection systems and related vapor deposition systems can be configured for forming vanadium containing layer on a substrate by cyclical deposition processes.

5. 发明申请

US20190304821A1 SUBSTRATE RACK AND A SUBSTRATE PROCESSING SYSTEM AND METHOD 审中-公开
公开(公告)号：US20190304821A1
公开(公告)日：2019-10-03
申请号：US15940759
申请日：2018-03-29
申请人： ASM IP Holding B.V.
发明人： Dieter Pierreux , Werner Knaepen , Bert Jongbloed , Cornelis Thaddeus Herbschleb , Hessel Sprey
IPC分类号： H01L21/673 , H01L21/306 , H01L21/02 , C23C16/48 , H01L21/67
摘要： The invention relates to a substrate rack and a substrate processing system for processing substrates in a reaction chamber. The substrate rack may be used for introducing a plurality of substrates in the reaction chamber. The substrate rack may have a plurality of spaced apart substrate holding provisions configured to hold the substrates in a spaced apart relationship. The rack may have an illumination system to irradiate radiation with a range from 100 to 500 nanometers onto a top surface of the substrates.

6. 发明授权

US10204782B2 Combined anneal and selective deposition process 有权
公开(公告)号：US10204782B2
公开(公告)日：2019-02-12
申请号：US15132091
申请日：2016-04-18
申请人： ASM IP Holding B.V. , IMEC VZW
发明人： Jan Willem Maes , Werner Knaepen , Roel Gronheid , Arjun Singh
IPC分类号： H01L21/33 , H01L21/033 , G03F7/00 , H01L21/02 , H01L21/027 , H01L21/32
摘要： A method for forming a film with an annealing step and a deposition step is disclosed. The method comprises an annealing step for inducing self-assembly or alignment within a polymer. The method also comprises a selective deposition step in order to enable selective deposition on a polymer.

7. 发明授权

US09887082B1 Method and apparatus for filling a gap 有权
公开(公告)号：US09887082B1
公开(公告)日：2018-02-06
申请号：US15222715
申请日：2016-07-28
申请人： ASM IP Holding B.V.
发明人： Viljami Pore , Werner Knaepen , Bert Jongbloed , Dieter Pierreux , Gido Van Der Star , Toshiya Suzuki
IPC分类号： H01L21/02 , C23C16/455 , C23C16/50 , H01L21/762
CPC分类号： H01L21/0228 , C23C16/45525 , C23C16/50 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/76224
摘要： There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

8. 发明申请

US20160240373A1 METHOD FOR FORMING OXIDE LAYER BY OXIDIZING SEMICONDUCTOR SUBSTRATE WITH HYDROGEN PEROXIDE 审中-公开
标题翻译：用过氧化氢氧化半导体衬底形成氧化层的方法
公开(公告)号：US20160240373A1
公开(公告)日：2016-08-18
申请号：US14621174
申请日：2015-02-12
申请人： ASM IP Holding B.V.
发明人： Fu Tang , Michael Givens , Qi Xie , Jan Willem Maes , Bert Jongbloed , Radko G. Bankras , Theodorus G.M. Oosterlaken , Dieter Pierreux , Werner Knaepen , Harald B. Profijt , Cornelius A. van der Jeugd
IPC分类号： H01L21/02
CPC分类号： H01L21/02236 , H01L21/02112 , H01L21/02164 , H01L21/02238
摘要： In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 Å or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.
摘要翻译：在一些实施例中，通过在约500℃或更低的工艺温度下暴露于过氧化氢来氧化半导体衬底，在半导体衬底上生长氧化物层。暴露于过氧化氢可持续到氧化层生长约1埃以上的厚度。当衬底是锗衬底时，虽然已经发现使用H 2 O的氧化形成密度为4.25g / cm 3的氧化锗，但是根据一些实施方案的氧化可以形成密度为约6g / cm 3或更高的氧化物层例如约6.27g / cm 3）。在一些实施例中，另一层材料直接沉积在氧化物层上。例如，介电层可以直接沉积在氧化物层上。

9. 发明申请

US20160148805A1 CYCLIC ALUMINUM OXYNITRIDE DEPOSITION 有权
标题翻译：循环氧化铝沉积
公开(公告)号：US20160148805A1
公开(公告)日：2016-05-26
申请号：US14555429
申请日：2014-11-26
申请人： ASM IP Holding B.V.
发明人： Bert Jongbloed , Dieter Pierreux , Werner Knaepen
IPC分类号： H01L21/02 , H01L21/308
CPC分类号： H01L21/02178 , H01L21/0228
摘要： A process for depositing aluminum oxynitride (AlON) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an aluminum precursor and a nitrogen precursor to form an aluminum and nitrogen-containing compound on the substrate. The aluminum and nitrogen-containing compound is subsequently exposed to an oxygen precursor to form AlON. The temporally separated exposures to an aluminum precursor and a nitrogen precursor, and the subsequent exposure to an oxygen precursor together constitute an AlON deposition cycle. A plurality of AlON deposition cycles may be performed to deposit an AlON film of a desired thickness. The deposition may be performed in a batch process chamber, which may accommodate batches of 25 or more substrates. The deposition may be performed without exposure to plasma.
摘要翻译：公开了一种沉积氮氧化铝（AlON）的方法。该方法包括使基底经历时间上分离的暴露于铝前体和氮前体，以在基底上形成含铝和氮的化合物。随后将铝和含氮化合物暴露于氧前体以形成AlON。时间上分离的暴露于铝前体和氮前体，随后暴露于氧前体一起构成了AlON沉积循环。可以执行多个AlON沉积循环以沉积所需厚度的AlON膜。沉积可以在间歇处理室中进行，其可以容纳25个或更多个基底的批次。可以在不暴露于等离子体的情况下进行沉积。

10. 发明授权

US11610775B2 Method and apparatus for filling a gap 有权
公开(公告)号：US11610775B2
公开(公告)日：2023-03-21
申请号：US16318094
申请日：2017-07-14
申请人： ASM IP Holding B.V.
发明人： Viljami Pore , Werner Knaepen , Bert Jongbloed , Dieter Pierreux , Steven R. A. Van Aerde , Suvi Haukka , Atsuki Fukazawa , Hideaki Fukuda
IPC分类号： H01L21/02 , H01J37/32 , C23C16/455 , H01L21/762 , C23C16/04 , C23C16/40
摘要： According to the invention there is provided a method of filling one or more gaps created during manufacturing of a feature on a substrate by providing a deposition method comprising; introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant; introducing a second reactant to the substrate with a second dose. The first reactant is introduced with a subsaturating first dose reaching only a top area of the surface of the one or more gaps and the second reactant is introduced with a saturating second dose reaching a bottom area of the surface of the one or more gaps. A third reactant may be provided to the substrate in the reaction chamber with a third dose, the third reactant reacting with at least one of the first and second reactant.

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