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1. 发明申请

US20210254216A1 GAS DISTRIBUTION ASSEMBLY AND METHOD OF USING SAME 有权
公开(公告)号：US20210254216A1
公开(公告)日：2021-08-19
申请号：US17171793
申请日：2021-02-09
申请人： ASM IP Holding B.V.
发明人： Yukihiro Mori , Vincent Hubert Bernard Gilles Babin , Naoto Tsuji
IPC分类号： C23C16/455 , C23C16/40
摘要： A gas distribution assembly and methods for adjusting the gas flow through a gas supply unit into a reaction chamber are disclosed. The gas distribution assembly and methods can be used to increase or decrease gas flow uniformly through the gas supply unit. The gas distribution assembly and methods can also be used to increase gas flow into one area of the reaction chamber, while decreasing gas flow into another area.

2. 发明申请

US20170029948A1 METHODS AND APPARATUSES FOR TEMPERATURE-INDEXED THIN FILM DEPOSITION 审中-公开
标题翻译：温度指数薄膜沉积的方法和装置
公开(公告)号：US20170029948A1
公开(公告)日：2017-02-02
申请号：US14811435
申请日：2015-07-28
申请人： ASM IP Holding B.V.
发明人： Bert Jongbloed , Delphine Longrie , Robin Roelofs , Lucian Jdira , Suvi Juhani Haukka , Antti Niskanen , Jun Kawahara , Yukihiro Mori
IPC分类号： C23C16/455 , H01L21/285 , H01L21/02 , C23C16/52 , C23C16/458
CPC分类号： C23C16/45544 , C23C16/45527 , C23C16/45565 , C23C16/458 , C23C16/4583 , C23C16/52 , C23C16/54 , H01L21/0228 , H01L21/0262 , H01L21/28556
摘要： In accordance with some embodiments herein, methods and apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other, and the substrate can be contacted with different reactants at different temperatures so as to minimize or prevent undesired gas phase reactions, chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
摘要翻译：根据本文的一些实施例，提供了用于沉积薄膜的方法和装置。在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。这些站可以彼此气体隔离，并且可以在不同的温度下将基板与不同的反应物接触，以便最小化或防止不期望的气相反应，化学气相沉积（CVD）和/或原子层沉积（ALD）反应在不同的反应物或反应物的组合之间。

3. 发明申请

US20160181128A1 HIGH-THROUGHPUT SEMICONDUCTOR-PROCESSING APPARATUS EQUIPPED WITH MULTIPLE DUAL-CHAMBER MODULES 审中-公开
标题翻译：配有多个双模块的高通量半导体加工设备
公开(公告)号：US20160181128A1
公开(公告)日：2016-06-23
申请号：US15060412
申请日：2016-03-03
申请人： ASM IP Holding B.V.
发明人： Yukihiro Mori , Takayuki Yamagishi
IPC分类号： H01L21/67 , C23C16/50 , C23C16/52 , H01L21/677
摘要： A wafer-processing apparatus includes: multiple discrete units of reactors disposed on the same plane; a wafer-handling chamber having a polygonal shape having multiple sides corresponding to and being attached to the multiple discrete units, respectively, and one additional side for a load lock chamber; a load lock chamber attached to the one additional side of the wafer-handling chamber; multiple discrete gas boxes for controlling gases corresponding to and being connected to the multiple discrete units, respectively; and multiple discrete electric boxes for controlling electric systems corresponding to and being detachably connected to the multiple discrete units, respectively, wherein the gas boxes and the electric boxes are arranged alternately as viewed from above under the multiple discrete units, and the electric boxes can be pulled out outwardly without being disconnected from the corresponding units so that sides of the gas boxes are accessible.
摘要翻译：晶片处理装置包括：设置在同一平面上的反应堆的多个分立单元; 晶片处理室具有分别对应于多个分立单元并且分别连接到多个分立单元的多边形的多边形形状，以及用于负载锁定室的一个附加侧; 附接到晶片处理室的另一侧的负载锁定室; 多个分立的气体箱，分别用于控制对应于多个离散单元并连接到多个分立单元的气体; 以及分别用于控制与多个分立单元相对应并且可拆卸地连接到多个分立单元的电气系统的多个分立电箱，其中气盒和电箱在多个分立单元下方从上方观察交替排列，电箱可以向外拉出而不与相应的单元断开连接，使得气箱的侧面可以接近。

4. 发明授权

US11462387B2 Substrate processing apparatus and substrate processing method 有权
公开(公告)号：US11462387B2
公开(公告)日：2022-10-04
申请号：US15954903
申请日：2018-04-17
申请人： ASM IP Holding B.V.
发明人： Yukihiro Mori
IPC分类号： H01L21/00 , H01J37/32 , H01L21/3065 , H01L21/67 , H01L21/3213 , H01L21/311
摘要： Examples of a substrate processing apparatus include a stage, an outer peripheral ring that surrounds the stage while provided with a gap between a side surface of the stage and the outer peripheral ring, a gas supply unit configured to supply gas from a lower side of the gap to an upper side of the gap, and an upper electrode provided above the stage.

5. 发明授权

US09343343B2 Method for reducing particle generation at bevel portion of substrate 有权
标题翻译：降低基板斜面部分颗粒产生的方法
公开(公告)号：US09343343B2
公开(公告)日：2016-05-17
申请号：US14281477
申请日：2014-05-19
申请人： ASM IP Holding B.V.
发明人： Yukihiro Mori
IPC分类号： H01L23/31 , H01L21/677 , H01L21/67 , C23C16/50 , H01J37/32 , B25J11/00 , C23C16/04 , C23C16/458
CPC分类号： H01L21/67742 , B25J11/0095 , C23C16/04 , C23C16/345 , C23C16/4401 , C23C16/4585 , C23C16/50 , C23C16/505 , H01J37/32091 , H01J37/32385 , H01J37/32532 , H01J37/32541 , H01L21/67011 , H01L21/68707 , H01L23/3171 , H01L23/3185 , H01L2924/0002 , H01L2924/00
摘要： A method for transporting a substrate using an end effector which mechanically clamps a periphery of the substrate includes: before transporting the substrate, depositing a compressive film only on, at, or in a bevel portion of the substrate; and transporting the substrate whose bevel portion is covered by the compressive film as the outermost film, using an end effector while mechanically clamping the periphery of the substrate.
摘要翻译：使用机械夹持基板的周边的端部执行器来输送基板的方法包括：在传送基板之前，仅在基板的斜面部分上沉积压缩膜; 并且使用末端执行器将其斜面部分被压缩膜覆盖的基板作为最外面的膜传送，同时机械地夹持基板的周边。

6. 发明申请

US20220341040A1 APPARATUSES FOR THIN FILM DEPOSITION 有权
公开(公告)号：US20220341040A1
公开(公告)日：2022-10-27
申请号：US17811978
申请日：2022-07-12
申请人： ASM IP HOLDING B.V.
发明人： Jun Kawahara , Suvi Haukka , Antti Niskanen , Eva Tois , Raija Matero , Hidemi Suemori , Jaako Anttila , Yukihiro Mori
IPC分类号： C23C16/455 , C23C16/52 , C23C16/458 , C23C16/54 , H01L21/67 , H01L21/677
摘要： In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

7. 发明申请

US20220119944A1 METHODS AND APARATUSES FOR FLOWABLE GAP-FILL 有权
公开(公告)号：US20220119944A1
公开(公告)日：2022-04-21
申请号：US17451299
申请日：2021-10-18
申请人： ASM IP HOLDING B.V.
发明人： Shinya Yoshimoto , Takahiro Onuma , Makoto Igarashi , Yukihiro Mori , Hideaki Fukuda , Rene Henricus Jozef Vervuurt , Timothee Blanquart
IPC分类号： C23C16/455 , C23C16/46 , C23C16/52
摘要： In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

8. 发明申请

US20210358780A1 HIGH-THROUGHPUT, MULTI-CHAMBER SUBSTRATE PROCESSING SYSTEM 有权
公开(公告)号：US20210358780A1
公开(公告)日：2021-11-18
申请号：US17317794
申请日：2021-05-11
申请人： ASM IP HOLDING B.V.
发明人： Yukihiro Mori
IPC分类号： H01L21/67
摘要： A semiconductor processing system comprises a first, a second, and a third process module assembly. The third process module assembly is between the first and the second process module assemblies, and includes an opening for providing substrates to be processed in the various process module assemblies. The process modules are arranged laterally relative to the opening. The first and second process module assemblies each include an associated transfer chamber, an associated substrate transfer device, and a plurality of associated process modules attached the associated transfer chamber. The third process module assembly may include an associated transfer chamber, an associated substrate transfer device, and a single associated process module attached to the associated transfer chamber. The processing system is configured to sequentially load substrates into the process module assemblies neighboring the third process module assembly, and lastly load substrates into the process module of the third process module assembly.

9. 发明申请

US20170032956A1 METHODS FOR THIN FILM DEPOSITION 审中-公开
标题翻译：薄膜沉积方法
公开(公告)号：US20170032956A1
公开(公告)日：2017-02-02
申请号：US14811370
申请日：2015-07-28
申请人： ASM IP Holding B.V.
发明人： Jun Kawahara , Suvi Haukka , Antti Niskanen , Eva Tois , Raija Matero , Hidemi Suemori , Jaako Anttila , Yukihiro Mori
IPC分类号： H01L21/02 , H01L21/285
CPC分类号： H01L21/28556 , C23C16/04 , C23C16/45551 , C23C16/54 , H01L21/0262 , H01L21/28562 , H01L21/76829 , H01L21/76849
摘要： In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
摘要翻译：根据本文的一些实施例，提供了用于沉积薄膜的方法。在一些实施例中，在多个站中执行薄膜沉积，其中每个站提供不同的反应物或反应物的组合。这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

10. 发明申请

US20170029947A1 APPARATUSES FOR THIN FILM DEPOSITION 审中-公开
标题翻译：薄膜沉积的设备
公开(公告)号：US20170029947A1
公开(公告)日：2017-02-02
申请号：US14811528
申请日：2015-07-28
申请人： ASM IP Holding B.V.
发明人： Jun Kawahara , Suvi Haukka , Antti Niskanen , Eva Tois , Raija Matero , Hidemi Suemori , Jaakko Anttila , Yukihiro Mori
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： C23C16/45527 , C23C16/45544 , C23C16/4583 , C23C16/52 , C23C16/54 , H01L21/67161 , H01L21/67167 , H01L21/67207 , H01L21/67745
摘要： In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.
摘要翻译：根据本文的一些实施例，提供用于沉积薄膜的装置。在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

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