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1. 发明申请

US20180286676A1 METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE 审中-公开
公开(公告)号：US20180286676A1
公开(公告)日：2018-10-04
申请号：US15706842
申请日：2017-09-18
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Yong-suk TAK , Min-jae Kang , Ju-ri Lee
IPC分类号： H01L21/02 , C23C16/458 , C23C16/34 , C23C16/455 , H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/51
CPC分类号： H01L21/02656 , C23C16/345 , C23C16/347 , C23C16/45531 , C23C16/45542 , C23C16/458 , H01L21/28088 , H01L21/823842 , H01L29/4966 , H01L29/517
摘要： A method of manufacturing an integrated circuit device and an integrated circuit device prepared according to the method, the method including forming a silicon oxycarbonitride (SiOCN) material layer on an active region of a substrate, the forming the SiOCN material layer including using a precursor that has a bond between a silicon (Si) atom and a carbon (C) atom; etching a portion of the active region to form a recess in the active region; baking a surface of the recess at about 700° C. to about 800° C. under a hydrogen (H2) atmosphere, and exposing the SiOCN material layer to the atmosphere of the baking while performing the baking; and growing a semiconductor layer from the surface of the recess baked under the hydrogen atmosphere.

2. 发明申请

US20180223425A1 METHODS FOR CONTROLLING THE SUBSTRATE TEMPERATURE USING A PLURALITY OF FLUSHING GASES 审中-公开
公开(公告)号：US20180223425A1
公开(公告)日：2018-08-09
申请号：US15944677
申请日：2018-04-03
申请人： AIXTRON SE
发明人： Adam Boyd , Daniel Claessens , Hugo Silva
IPC分类号： C23C16/458 , H01L21/687 , C23C16/46 , H01L21/67
CPC分类号： C23C16/458 , C23C16/46 , H01L21/67109 , H01L21/68735 , H01L21/6875 , H01L21/68771
摘要： A CVD reactor includes a substrate holder with one or more pockets for holding one or more substrates. The CVD reactor also includes a heating system arranged below the substrate holder and spaced apart from the lower side of the substrate holder by a gap. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. A gas flushing device flushes the gap with flushing gases of different heat conductivity. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.

3. 发明申请

US20180211862A1 MOMENT CANCELLING PAD RAISING MECHANISM IN WAFER POSITIONING PEDESTAL FOR SEMICONDUCTOR PROCESSING 审中-公开
公开(公告)号：US20180211862A1
公开(公告)日：2018-07-26
申请号：US15934808
申请日：2018-03-23
申请人： Lam Research Corporation
发明人： Paul Konkola , Karl F. Leeser , Easwar Srinivasan
IPC分类号： H01L21/683 , H01L21/02 , H01L21/687 , H01L21/67 , C23C16/455 , C23C16/50 , C23C16/458
CPC分类号： H01L21/6833 , C23C16/45544 , C23C16/458 , C23C16/4584 , C23C16/4586 , C23C16/50 , H01L21/0228 , H01L21/67103 , H01L21/68742 , H01L21/68764 , H01L21/68792
摘要： An assembly used in a process chamber for depositing a film on a wafer including a pedestal assembly having a pedestal movably mounted to a main frame. A lift pad rests upon the pedestal and moves with the pedestal. A raising mechanism separates the pad from the pedestal, and includes a hard stop fixed to the main frame, a roller attached to the pedestal assembly, a slide moveably attached to the pedestal assembly, a lift pad bracket interconnected to the slide and a pad shaft extending from the lift pad, a lever rotatably attached to lift pad bracket, a ferroseal assembly surrounding the pad shaft, and a yoke assembly offsetting a moment to the ferroseal assembly when the lever rotates. When the pedestal assembly moves upwards, the lever rotates when engaging with the upper hard stop and roller, and separates the pad from the pedestal by a process rotation displacement.

4. 发明申请

US20180155826A1 MOCVD System Injector for Fast Growth of AlInGaBN Material 审中-公开
公开(公告)号：US20180155826A1
公开(公告)日：2018-06-07
申请号：US15737604
申请日：2016-06-22
申请人： University of South Carolina
发明人： Asif Khan
IPC分类号： C23C16/30 , C23C16/455 , C23C16/458
CPC分类号： C23C16/303 , C23C16/45565 , C23C16/45578 , C23C16/458
摘要： A conical supply tube is provided, along with deposition systems using such a tube and methods of its use. The conical supply tube includes a conical head formed from a hollow structure defining a having a fitting end and an opposite, shower end, with the fitting end has an initial diameter that is less than a diameter at the shower end. A MOCVD chamber is also generally provided that includes such a conical supply tube and a susceptor configured to hold a substrate facing the shower end of the conical supply tube. Methods are provided for growing a group III nitride layer on a surface of a substrate.

5. 发明授权

US09978606B2 Methods for atomic level resolution and plasma processing control 有权
公开(公告)号：US09978606B2
公开(公告)日：2018-05-22
申请号：US15279058
申请日：2016-09-28
申请人： APPLIED MATERIALS, INC.
发明人： Ankur Agarwal
IPC分类号： H01L21/3065 , H01L21/311 , C23C16/458 , H01J37/32 , C23C16/455 , C23C16/505 , H01L21/02 , H01L21/67
CPC分类号： H01L21/30655 , B05D1/62 , B05D5/083 , C23C16/45544 , C23C16/458 , C23C16/505 , H01J37/32082 , H01J37/32165 , H01J37/32174 , H01J37/32715 , H01J37/32816 , H01J2237/334 , H01L21/0212 , H01L21/02274 , H01L21/0228 , H01L21/31116 , H01L21/31122 , H01L21/67069
摘要： Methods and apparatus for processing substrates are provided. In some embodiments, methods of processing substrates includes: (a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode; (b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and (c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.

6. 发明申请

US20180119277A1 Gas Distribution Apparatus for Deposition System 审中-公开
公开(公告)号：US20180119277A1
公开(公告)日：2018-05-03
申请号：US15382089
申请日：2016-12-16
申请人： HERMES-EPITEK CORPORATION
发明人： Junji Komeno , Noboru Suda , Takahiro Oishi , Tsan-Hua Huang , Shih-Yung Shieh
IPC分类号： C23C16/458 , C23C16/18
CPC分类号： C23C16/458 , C23C16/18 , C23C16/455 , C23C16/45576 , C23C16/46
摘要： The invention provides a gas distribution apparatus or injector in a reaction chamber comprising multiple diffusion plates arranged substantially parallel and at least one bump with slopes and substantially flat top/bottom surface to introduce at least two different reaction gases horizontally and separately into the reaction chamber while preventing condensation of adduct formed due to mixture of the reaction gases at a low temperature by avoiding back diffusion. Meanwhile any turbulence or vortex of the reaction gases is not caused because slope shape is formed at the bump.

7. 发明授权

US09951422B2 Semiconductor device manufacturing apparatus having plurality of gas exhausting pipes and gas sensors 有权
公开(公告)号：US09951422B2
公开(公告)日：2018-04-24
申请号：US15285926
申请日：2016-10-05
申请人： Samsung Electronics Co., Ltd.
发明人： Jaechul Shin , JongCheol Lee , Geunkyu Choi , MinHwa Jung , Sukjin Chung
IPC分类号： C23C16/455 , C23C16/40 , C23C16/44 , H01L21/02 , C23C16/458 , C23C16/52 , H01L21/67
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/52 , H01L21/67017 , H01L21/67253
摘要： A semiconductor device manufacturing apparatus includes a shower head at a top of a chamber, a gas supplying part on the shower head, a susceptor in the chamber, and a gas exhausting part under the chamber. The chamber has first and second reaction spaces that are virtually separated from each other. A first gas supply pipe supplies a first gas into the first reaction space and a second gas supply pipe supplies a second gas into the second reaction space. A first gas exhausting pipe is adjacent the first reaction space and a second gas exhausting pipe is adjacent the second reaction space on opposite sides of the susceptor. A first gas sensor connected to the first gas exhausting pipe senses the second gas and a second gas sensor connected to the second gas exhausting pipe senses the first gas.

8. 发明申请

US20180087182A1 FILM GROWTH APPARATUS, FILM GROWTH METHOD AND MAINTENANCE METHOD OF FILM GROWTH APPARATUS 审中-公开
公开(公告)号：US20180087182A1
公开(公告)日：2018-03-29
申请号：US15711281
申请日：2017-09-21
申请人： NuFlare Technology, Inc.
发明人： Yoshitaka ISHIKAWA , Hideshi TAKAHASHI
IPC分类号： C30B25/14 , C23C16/455 , C23C16/44 , C23C16/458 , C30B25/08 , C30B29/40 , H01L21/02
CPC分类号： C30B25/14 , C23C16/4401 , C23C16/4404 , C23C16/4412 , C23C16/455 , C23C16/458 , C23C16/4586 , C30B25/08 , C30B29/403 , H01L21/0262
摘要： A film growth apparatus according to one aspect of the present disclosure includes: a reactor configured to perform film growth processing on a substrate; an exhaust configured to discharge an exhaust gas from the reactor to the outside; a first valve including a valving element, the first valve provided in a pipe connecting the reactor with the exhaust and configured to control a pressure of the reactor by a position of the valving element; a valving element driver configured to cause the valving element to operate; and a valve controller including a closed position storage configured to store a closed position of the valving element, an opening degree controller configured to control the position of the valving element operated by the valving element driver, and a closed position shifter configured to detect a load of the valving element driver and shift the closed position in a case where the load exceeds a predetermined reference value.

9. 发明授权

US09926626B2 System and method for processing substrates 有权
公开(公告)号：US09926626B2
公开(公告)日：2018-03-27
申请号：US14413553
申请日：2013-07-09
申请人： Saint-Gobain Glass France
发明人： Stefan Jost , Martin Fürfanger , Jörg Palm
IPC分类号： C23C16/458 , H01L21/67 , H01L21/673 , H01L21/677 , H01L31/20
CPC分类号： C23C16/458 , H01L21/67173 , H01L21/67353 , H01L21/67393 , H01L21/6776 , H01L31/206
摘要： The present invention relates to a system for processing coated substrates, having the following features: at least one evacuable process box for accommodating at least one substrate with a gas-tightly sealable housing, which forms a hollow space, wherein the housing comprises at least one housing section, which is implemented such that the substrate is thermally treatable by incident electromagnetic thermal radiation, wherein the housing has at least one housing section coupleable to a cooling device for its cooling and at least one housing section not coupled to the cooling device, wherein the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the housing section coupled to the cooling device, and wherein the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and introducing gas into the hollow space; a cooling device for cooling the process box housing section coupleable to the cooling device; at least one loading/unloading unit for loading and/or unloading the process box; at least one heating unit for heating the substrate in the process box; at least one cooling unit for cooling the substrate in the process box; at least one pumping-out device for draining the hollow space of the process box; at least one gas supply device for supplying the hollow space of the process box with at least one gas; at least one transport mechanism, which is implemented for the purpose of executing a relative movement between, on the one hand, the process box and, on the other, the heating, cooling, and loading/unloading unit.

10. 发明申请

US20180073146A1 Antenna Device, Plasma Generating Device Using the Same, and Plasma Processing Apparatus 审中-公开
公开(公告)号：US20180073146A1
公开(公告)日：2018-03-15
申请号：US15695236
申请日：2017-09-05
申请人： TOKYO ELECTRON LIMITED
发明人： Hitoshi KATO , Takeshi KOBAYASHI
IPC分类号： C23C16/505 , C23C16/458 , H01J37/32 , H01Q3/01
CPC分类号： C23C16/505 , C23C16/45551 , C23C16/458 , C23C16/507 , H01J37/321 , H01J37/3211 , H01J2237/3321 , H01Q3/01
摘要： There is provided an antenna device which includes: a plurality of antenna members installed to extend along a predetermined circling shape having a longitudinal direction and a lateral direction, the antenna members including end portions connected to each other so as to form a pair in which connection portions in the longitudinal direction face each other in the lateral direction; deformable conductive connection members configured to connect the end portions of the plurality of antenna members adjacent to each other; and at least two vertical movement mechanisms individually installed in at least two of the plurality of antenna members and configured to change a bending angle of the antenna members using the connection members as fulcrums by vertically moving the at least two of the plurality of antenna members.

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