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1. 发明申请

US20110215340A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20110215340A1
公开(公告)日：2011-09-08
申请号：US13109213
申请日：2011-05-17
申请人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Naomi Anzue , Gaku Sugahara , Yoshiaki Hasegawa , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/02
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/32 , H01L33/38 , H01L33/40 , H01S5/0202 , H01S5/02272 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/3202 , H01S2304/04
摘要： A semiconductor light-emitting device according to the present invention includes: a GaN substrate 1 containing an n-type impurity and being made of silicon carbide or a nitride semiconductor; a multilayer structure 10 provided on a main surface of the GaN substrate 1; a p-electrode 17 formed on the multilayer structure 10; a first n-electrode 18 substantially covering the entire rear surface of the GaN substrate 1; and a second n-electrode 20 provided on the first n-electrode 18 so as to expose at least a portion of the periphery of the first n-electrode 18.
摘要翻译：根据本发明的半导体发光器件包括：包含n型杂质并由碳化硅或氮化物半导体制成的GaN衬底1; 设置在GaN衬底1的主表面上的多层结构10; 形成在多层结构体10上的p电极17; 基本上覆盖GaN衬底1的整个后表面的第一n电极18; 以及设置在第一n电极18上以露出第一n电极18的周边的至少一部分的第二n电极20。

2. 发明申请

US20100259184A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20100259184A1
公开(公告)日：2010-10-14
申请号：US12279573
申请日：2007-02-15
申请人： Ryou Kato , Yasutoshi Kawaguchi , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Ryou Kato , Yasutoshi Kawaguchi , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L33/44 , H01L27/15 , H01L33/02 , H05B37/02
CPC分类号： H01L33/20 , H01L21/02389 , H01L21/0254 , H01L21/0259 , H01L21/0262 , H01L21/02642 , H01L33/08 , H01L33/18 , H01L33/22
摘要： A light-emitting device according to the present invention includes a plurality of columnar semiconductors 30 arranged on a GaN substrate 7, and a plurality of protrusions 13 formed on a side face of each columnar semiconductor 30. Each columnar semiconductor 30 has a light-emitting portion composed of a nitride compound semiconductor, and is supported by the GaN substrate 7 at a lower end. The columnar semiconductor 30 has a multilayer structure including an n-cladding layer 9, an active layer 10, and a p-cladding layer 11, the active layer 10 having a multi-quantum well structure in which InWGa1-WN (0
摘要翻译：根据本发明的发光器件包括布置在GaN衬底7上的多个柱状半导体30和形成在每个柱状半导体30的侧面上的多个突起13.每个柱状半导体30具有发光部分由氮化物化合物半导体构成，并在下端被GaN衬底7支撑。柱状半导体30具有包括n包层9，有源层10和p包层11的多层结构，有源层10具有多量子阱结构，其中InWGa1-WN（0

3. 发明申请

US20090022193A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090022193A1
公开(公告)日：2009-01-22
申请号：US11908430
申请日：2006-03-09
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01S5/343 , H01L33/00
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译：根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

4. 发明授权

US07470608B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07470608B2
公开(公告)日：2008-12-30
申请号：US11359480
申请日：2006-02-23
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
IPC分类号： H01L21/44
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译：本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和凹部121。

5. 发明授权

US07030417B2 Semiconductor light emitting device and fabrication method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07030417B2
公开(公告)日：2006-04-18
申请号：US10633040
申请日：2003-08-04
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Kiyoshi Ohnaka , Susumu Koike
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L21/0242 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/10 , H01L33/46 , H01L2224/48463 , H01L2224/49107
摘要： The present invention relates to a semiconductor light emitting device comprising a sapphire substrate 11; a u-GaN layer 12 that is formed on top of the substrate 11 and that comprises a plurality of concave portions 121 formed into band-like shapes with predetermined intervals therebetween; a regrown u-GaN layer 13 formed on the u-Ga layer 12; a layered structure that is formed on the u-GaN layer 13 comprises an n-GaN layer 15, an active layer 16, and a p-GaN layer 19; an n-type electrode 24 formed on the n-GaN layer 15 exposed by removing a potion of the layered structure; and a transparent p-type electrode 20 formed on the p-GaN layer 19, wherein the p-type electrode 20 is an emission detection surface, and an air layer S is formed between the bottom surface of the u-GaN layer 13 and the concave portions 121.
摘要翻译：本发明涉及一种包括蓝宝石衬底11的半导体发光器件; 形成在基板11的顶部并且包括多个形成为具有预定间隔的带状形状的凹部121的u-GaN层12; 形成在u-Ga层12上的再生U-GaN层13; 形成在u-GaN层13上的分层结构包括n-GaN层15，有源层16和p-GaN层19; 形成在n-GaN层15上的n型电极24通过去除层状结构的一部分而暴露; 以及形成在p-GaN层19上的透明p型电极20，其中p型电极20是发射检测表面，并且在u-GaN层13的底表面和凹部121。

6. 发明授权

US07816696B2 Nitride semiconductor device and method for manufacturing same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07816696B2
公开(公告)日：2010-10-19
申请号：US11908430
申请日：2006-03-09
申请人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
发明人： Yoshiaki Hasegawa , Gaku Sugahara , Naomi Anzue , Akihiko Ishibashi , Toshiya Yokogawa
IPC分类号： H01L29/267 , H01L21/332
CPC分类号： H01S5/32341 , H01L21/28575 , H01L29/2003 , H01L29/452 , H01L29/861 , H01L33/20 , H01L33/382 , H01L33/40 , H01S5/0207 , H01S5/0421 , H01S5/0425 , H01S2301/173
摘要： An nitride semiconductor device according to the present invention is a nitride semiconductor device including: an n-GaN substrate 10; a semiconductor multilayer structure 100 formed on a principal face of the n-GaN substrate 10, the semiconductor multilayer structure 100 including a p-type region and an n-type region; a p-side electrode 32 which is in contact with a portion of the p-type region included in the semiconductor multilayer structure 100; and an n-side electrode 34 provided on the rear face of the n-GaN substrate 10. The rear face of the n-GaN substrate includes a nitrogen surface, such that a carbon concentration at an interface between the rear face and the n-side electrode 34 is adjusted to 5 atom % or less.
摘要翻译：根据本发明的氮化物半导体器件是氮化物半导体器件，其包括：n-GaN衬底10; 形成在n-GaN衬底10的主面上的半导体多层结构100，包括p型区和n型区的半导体层叠结构100; p侧电极32，其与包含在半导体多层结构体100中的p型区域的一部分接触; 以及设置在n-GaN衬底10的背面上的n侧电极34.n-GaN衬底的背面包括氮表面，使得在背面和n- 侧电极34被调整为5原子％以下。

7. 发明授权

US07704860B2 Nitride-based semiconductor device and method for fabricating the same 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US07704860B2
公开(公告)日：2010-04-27
申请号：US10597575
申请日：2005-11-15
申请人： Toshitaka Shimamoto , Yasutoshi Kawaguchi , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
发明人： Toshitaka Shimamoto , Yasutoshi Kawaguchi , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
IPC分类号： H01L21/20
CPC分类号： H01S5/22 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01S5/32341 , H01S2304/12
摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.
摘要翻译：根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区垂直生长区域横向生长。在箭头A所示的方向上测量的垂直生长区域的各自尺寸的总和＆Sgr X以及在相同方向上测量的横向生长区域的各自尺寸的总和＆Sgr; Y满足不等式＆lt; Sgr; X /＆S; Y> 1.0。

8. 发明申请

US20080272462A1 Nitride-Based Semiconductor Device and Method for Fabricating the Same 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20080272462A1
公开(公告)日：2008-11-06
申请号：US10597575
申请日：2005-11-15
申请人： Toshitaka Shimamoto , Yasutoshi Kawaguchi , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
发明人： Toshitaka Shimamoto , Yasutoshi Kawaguchi , Yoshiaki Hasegawa , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
IPC分类号： H01L21/20 , H01L29/201
CPC分类号： H01S5/22 , H01L21/02389 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01S5/32341 , H01S2304/12
摘要： A nitride-based semiconductor device according to the present invention includes a semiconductor multilayer structure supported on a substrate structure 101 with electrical conductivity. The principal surface of the substrate structure 101 has at least one vertical growth region, which functions as a seed crystal for growing a nitride-based semiconductor vertically, and a plurality of lateral growth regions for allowing the nitride-based semiconductor that has grown on the vertical growth region to grow laterally. The sum ΣX of the respective sizes of the vertical growth regions as measured in the direction pointed by the arrow A and the sum ΣY of the respective sizes of the lateral growth regions as measured in the same direction satisfy the inequality ΣX/ΣY>1.0.
摘要翻译：根据本发明的氮化物基半导体器件包括支撑在具有导电性的衬底结构101上的半导体多层结构。衬底结构101的主表面具有至少一个垂直生长区，其起垂直生长氮化物基半导体的晶种的作用，以及用于允许在其上生长的氮化物基半导体的多个横向生长区垂直生长区域横向生长。在箭头A所指的方向上测量的垂直生长区域的各自尺寸的大小和在相同方向上测量的横向生长区域的各自尺寸的总和SigmaY的和ΣX满足SigmaX / SigmaY> 1.0的不等式。

9. 发明授权

US07338827B2 Nitride semiconductor laser and method for fabricating the same 失效
标题翻译：氮化物半导体激光器及其制造方法
公开(公告)号：US07338827B2
公开(公告)日：2008-03-04
申请号：US10547968
申请日：2004-03-09
申请人： Gaku Sugahara , Yasutoshi Kawaguchi , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
发明人： Gaku Sugahara , Yasutoshi Kawaguchi , Akihiko Ishibashi , Isao Kidoguchi , Toshiya Yokogawa
IPC分类号： H01L21/00
CPC分类号： H01S5/227 , H01S5/0202 , H01S5/0421 , H01S5/2205 , H01S5/32341
摘要： A method for fabricating nitride semiconductor devices according to the present invention includes the steps of: (A) providing a nitride semiconductor substrate, which will be split into chip substrates, which includes device portions that will function as the respective chip substrates when the substrate is split and interdevice portions that connect the device portions together, and in which the average thickness of the interdevice portions is smaller than the thickness of the device portions; (B) defining a masking layer, which has striped openings over the device portions, on the upper surface of the nitride semiconductor substrate; (C) selectively growing nitride semiconductor layers on portions of the upper surface of the nitride semiconductor substrate, which are exposed through the openings of the masking layer; and (D) cleaving the nitride semiconductor substrate along the interdevice portions of the nitride semiconductor substrate, thereby forming nitride semiconductor devices on the respectively split chip substrates.
摘要翻译：根据本发明的制造氮化物半导体器件的方法包括以下步骤：（A）提供将被分成芯片衬底的氮化物半导体衬底，其包括当衬底为基底时用作各个芯片衬底的器件部分将装置部分连接在一起的分割和互连部分，并且其中，所述装置间部分的平均厚度小于所述装置部分的厚度; （B）在氮化物半导体衬底的上表面上限定在器件部分上具有条纹开口的掩模层; （C）在氮化物半导体衬底的上表面的通过掩模层的开口露出的部分上选择性地生长氮化物半导体层; 以及（D）沿着氮化物半导体衬底的间隙部分切割氮化物半导体衬底，从而在分别的芯片衬底上形成氮化物半导体器件。

10. 发明申请

US20070217460A1 NITRIDE SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070217460A1
公开(公告)日：2007-09-20
申请号：US11568336
申请日：2005-04-20
申请人： Akihiko Ishibashi , Toshiya Yokogawa , Toshitaka Shimamoto , Yoshiaki Hasegawa , Yasutoshi Kawaguchi , Isao Kidoguchi
发明人： Akihiko Ishibashi , Toshiya Yokogawa , Toshitaka Shimamoto , Yoshiaki Hasegawa , Yasutoshi Kawaguchi , Isao Kidoguchi
IPC分类号： H01S5/30 , H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/0075 , H01S5/2201 , H01S5/305 , H01S5/3216 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A process for producing a nitride semiconductor according to the present invention includes: step (A) of provided an n-GaN substrate 101; step (B) of forming on the substrate 101 a plurality of stripe ridges having upper faces which are parallel to a principal face of the substrate 101; step (C) of selectively growing AlxGayInzN crystals (0≦x, y, z≦1: x+y+z=1) 104 on the upper faces of the plurality of stripe ridges, the AlxGayInzN crystals containing an n-type impurity at a first concentration; and step (D) of growing an Alx′Gay′Inz′N crystal (0≦x′, y′, z′≦1: x′+y′+z′=1) 106 on the AlxGayInzN crystals 104, the Alx′Gay′Inz′N crystal 106 containing an n-type impurity at a second concentration which is lower than the first concentration, and linking every two adjoining AlxGayInzN crystals 104 with the Alx′Gay′Inz′N crystal 106 to form one nitride semiconductor layer 120.
摘要翻译：根据本发明的制造氮化物半导体的方法包括：提供n-GaN衬底101的步骤（A）; 在基板101上形成具有平行于基板101的主面的上表面的多个条纹脊的步骤（B）; 选择性地生长Al x N晶体的步骤（C）（0≤x，y，z <= 1：x + y + z = 1）104，在多个条纹脊的上表面上，含有N，N，N，第一浓度的n型杂质; 和步骤（D），生长Al 2 O 3 / （0 <= x'，y'，z'<= 1：x'）。 + y'+ z'= 1）106在Al x N y晶体104中，Al x x < 包含低于第一浓度的第二浓度的n型杂质，并且连接每两个相邻的Al x x的子晶体106 在具有Al x Si 2 O 3的N z晶体104中，Ga 3+ 在＆lt; SUB＆gt;＆lt; SUB＆gt;＆lt; / SUB＆gt;＆lt;＆lt;＆lt; 形成一个氮化物半导体层120。

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