专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6064551A Magnetoresistance effect type magnetic head 失效
标题翻译：磁阻效应型磁头
公开(公告)号：US6064551A
公开(公告)日：2000-05-16
申请号：US30377
申请日：1998-02-25
申请人： Akio Takada , Takuji Shibata , Moriaki Abe , Tadayuki Honda , Kenji Yazawa , Hiroaki Narisawa
发明人： Akio Takada , Takuji Shibata , Moriaki Abe , Tadayuki Honda , Kenji Yazawa , Hiroaki Narisawa
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： The present invention provides a high quality magnetoresistance effect type magnetic head having an increased reproduction output and capable of applying a uniform bias magnetic field to a magnetoresistance effect layer without increasing an impedance. The magnetoresistance effect type magnetic head according to the present invention includes: a magnetic layer 11 magnetized approximately in a vertical direction to a plane 14 opposing to a magnetic recording medium; a non-magnetic insulation layer 12 formed on the magnetic layer 11; and a magnetoresistance effect layer 13 formed on the non-magnetic insulation layer 12 and exhibiting the magnetoresistance effect. In the longitudinal type magnetoresistance effect type magnetic head according to the present, the detection current supplied to a magnetoresistance element is prevented from flowing into a hard magnetic film to lower the head reproduction output.
摘要翻译：本发明提供了一种具有增加的再现输出并且能够在不增加阻抗的情况下将均匀偏置磁场施加到磁阻效应层的高质量磁阻效应型磁头。根据本发明的磁阻效应型磁头包括：磁性层11，其磁性层大约在与磁记录介质相对的平面14的垂直方向上磁化; 形成在磁性层11上的非磁性绝缘层12; 以及形成在非磁性绝缘层12上并具有磁阻效应的磁阻效应层13。在根据本发明的纵向型磁阻效应型磁头中，防止提供给磁阻元件的检测电流流入硬磁膜以降低磁头再现输出。

2. 发明授权

US6120920A Magneto-resistive effect magnetic head 失效
标题翻译：磁阻效应磁头
公开(公告)号：US6120920A
公开(公告)日：2000-09-19
申请号：US196562
申请日：1998-11-20
申请人： Akio Takada , Moriaki Abe , Tadayuki Honda , Hiroaki Narisawa , Takuji Shibata
发明人： Akio Takada , Moriaki Abe , Tadayuki Honda , Hiroaki Narisawa , Takuji Shibata
IPC分类号： G11B5/39 , B32B9/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996 , Y10S428/90 , Y10T428/1121
摘要： A magneto-resistive effect type magnetic head employing a spin valve film in which the direction of magnetization of a free layer is constant even in the absence of an external magnetic field to assure magnetic stability. The magneto-resistive effect type magnetic head includes a magneto-resistive effect film of a planar substantially rectangular configuration, having its longitudinal direction substantially perpendicular to a magnetic recording medium sliding surface, a first electrode connected to a longitudinal end of the magneto-resistive effect film, a second electrode connected to the other longitudinal end of the magneto-resistive effect film and hard magnetic films arranged on both ends along the width of the magneto-resistive effect film. The magneto-resistive effect film is made up of at least a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer and an anti-ferromagnetic layer, layered together. The hard magnetic films has an electrical resistance larger than that of the magneto-resistive effect film.
摘要翻译：使用自旋阀膜的磁阻效应型磁头，其中自由层的磁化方向即使在没有外部磁场的情况下也是恒定的，以确保磁稳定性。磁阻效应型磁头包括平面大致矩形构造的磁阻效应膜，其纵向基本上垂直于磁记录介质滑动表面，第一电极连接到磁阻效应的纵向端薄膜，连接到磁阻效应膜的另一纵向端的第二电极和沿着磁阻效应膜的宽度布置在两端的硬磁膜。磁阻效应膜由至少第一铁磁层，非磁性层，第二铁磁层和反铁磁层构成，层叠在一起。硬磁膜的电阻大于磁阻效应膜的电阻。

3. 发明授权

US06572917B2 Manufacturing method of magnetic memory device 失效
标题翻译：磁存储器件的制造方法
公开(公告)号：US06572917B2
公开(公告)日：2003-06-03
申请号：US10189821
申请日：2002-07-03
申请人： Hiroaki Narisawa , Keitaro Endo , Shinya Kubo
发明人： Hiroaki Narisawa , Keitaro Endo , Shinya Kubo
IPC分类号： B05D512
CPC分类号： H01L27/228 , B82Y10/00 , H01L43/12
摘要： A manufacturing method of a magnetic memory device, wherein the inventive method does not require any special technique for forming pattern, but bilaterally ensures precision for processing a tunnel magneto-resistive effect element (called TMR element) and self-matching formation of connecting elements. The manufacturing method of a magnetic memory device comprises a processing step of forming a tunnel magneto-resistive effect film sandwiching a tunnel barrier layer between a magnetic pinned layer and a memory layer into a predetermined elementary configuration by applying a mask layer, wherein the mask layer is formed by applying a plating process.
摘要翻译：一种磁存储器件的制造方法，其中本发明的方法不需要任何形成图案的特殊技术，而是双边确保处理隧道磁阻效应元件（称为TMR元件）和连接元件的自匹配形成的精度。磁存储器件的制造方法包括：处理步骤，通过施加掩模层，形成在磁性被钉扎层和存储层之间夹入隧道势垒层的隧道磁阻效应膜到预定的基本构型，其中掩模层通过施加电镀工艺形成。

4. 发明授权

US07262064B2 Magnetoresistive effect element, magnetic memory element magnetic memory device and manufacturing methods thereof 有权
标题翻译：磁阻效应元件，磁存储元件磁存储器件及其制造方法
公开(公告)号：US07262064B2
公开(公告)日：2007-08-28
申请号：US10492147
申请日：2002-10-11
申请人： Kazuhiro Ohba , Kazuhiko Hayashi , Hiroshi Kano , Kazuhiro Bessho , Tetsuya Mizuguchi , Yutaka Higo , Masanori Hosomi , Tetsuya Yamamoto , Hiroaki Narisawa , Takeyuki Sone , Keitaro Endo , Shinya Kubo
发明人： Kazuhiro Ohba , Kazuhiko Hayashi , Hiroshi Kano , Kazuhiro Bessho , Tetsuya Mizuguchi , Yutaka Higo , Masanori Hosomi , Tetsuya Yamamoto , Hiroaki Narisawa , Takeyuki Sone , Keitaro Endo , Shinya Kubo
IPC分类号： H01L21/00 , G11B5/33 , G11B5/127
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C2029/5002 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/302 , H01L43/10 , H01L43/12
摘要： In a magnetoresistive effect element using a ferromagnetic tunnel junction having a tunnel barrier layer sandwiched between at least a pair of ferromagnetic layers, a magnetization free layer comprising one of the ferromagnetic layers is composed of a single layer of a material having an amorphous or microcrystal structure or a material layer the main portion of which has an amorphous or microcrystal structure. The magnetoresistive effect element can produce excellent magnetic-resistance characteristics, and a magnetic memory element and a magnetic memory device using the magnetoresistive effect element as a memory element thereof can improve both of write and read characteristics at the same time.
摘要翻译：在使用具有夹在至少一对铁磁层之间的隧道势垒层的铁磁隧道结的磁阻效应元件中，包含一个铁磁层的磁化自由层由单层具有无定形或微晶结构的材料构成或其主要部分具有无定形或微晶结构的材料层。磁阻效应元件可以产生优异的磁阻特性，并且使用磁阻效应元件作为其存储元件的磁存储元件和磁存储器件可以同时改善写入和读取特性。

5. 发明申请

US20080083918A1 Storage Element 有权
标题翻译：存储元件
公开(公告)号：US20080083918A1
公开(公告)日：2008-04-10
申请号：US11632594
申请日：2005-07-08
申请人： Katsuhisa Aratani , Tomohito Tsushima , Hiroaki Narisawa , Wataru Otsuka , Hidenari Hachino
发明人： Katsuhisa Aratani , Tomohito Tsushima , Hiroaki Narisawa , Wataru Otsuka , Hidenari Hachino
IPC分类号： H01L45/00
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/149 , H01L45/1675
摘要： It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density.A storage element includes resistance changing elements 10 having recording layers 2, 3 provided between two electrodes 1, 4 and in which resistance values of the recording layers 2, 3 are reversibly changed with application of electric potential with different polarities to these two electrodes 1, 4, at least part of the layers 2, 3 constructing the recording layers of the resistance changing elements 10 being formed commonly by the same layer in a plurality of adjacent memory cells.
摘要翻译：旨在提供具有能够以高密度容易地制造的布置的存储元件。存储元件包括电阻变化元件10，其具有设置在两个电极1,4之间的记录层2,3，并且其中记录层2,3的电阻值可通过向这两个电极1施加不同极性的电位而可逆地改变，如图4所示，构成电阻变化元件10的记录层的层2,3的至少一部分由多个相邻存储单元中的相同层共同形成。

6. 发明授权

US6084028A Nitrile resin composition 有权
标题翻译：丁腈树脂组成
公开(公告)号：US6084028A
公开(公告)日：2000-07-04
申请号：US152518
申请日：1998-09-14
申请人： Makoto Someda , Masahiro Kaneko , Mitsuo Kawata , Kyoji Kuroda , Hiroaki Narisawa , Shinichi Asai
发明人： Makoto Someda , Masahiro Kaneko , Mitsuo Kawata , Kyoji Kuroda , Hiroaki Narisawa , Shinichi Asai
IPC分类号： C08F279/02 , C08L51/04 , C08G63/40 , C08G63/685 , C08G69/44
CPC分类号： C08F279/02 , C08L51/04
摘要： A nitrile resin composition having excellent transparency, antistatic properties and practical physical properties. The composition comprises (A) 80 to 97 wt. % of a nitrile resin which is obtained by graft copolymerization, in the presence of 3 to 30 parts by weight of a rubbery polymer containing at least 50 wt. % of a conjugated diene unit, of 100 parts by weight of a monomer mixture containing an unsaturated nitrile and an alkyl methacrylate, and has, as a matrix component, 65 to 80 wt. % of an unsaturated nitrile unit and 20 to 35 wt. % in total of an alkyl (meth)acrylate unit and a unit of a further monomer copolymerizable with the unsaturated nitrile and alkyl (meth)acrylate; and (B) 3 to 20 wt. % of a polyether ester amide, wherein the ratio of the melt viscosity of the component (A) to that of the component (B) at 210.degree. C. is 0.5 to 5 at a shear rate of 10.sup.2 sec.sup.-1 and 0.5 to 3 at a shear rate of 10.sup.3 sec.sup.-1 and the difference of the refractive index between the matrix component (A) to the component (B) is 0.2 or less.
摘要翻译：具有优异透明性，抗静电性和实用物理性能的腈树脂组合物。组合物包含（A）80-97重量％通过接枝共聚获得的腈树脂的％，在3〜30重量份含有至少50重量％的橡胶状聚合物的情况下，％的共轭二烯单元，100重量份的含有不饱和腈和甲基丙烯酸烷基酯的单体混合物，并且具有65至80重量％的作为基质组分。％的不饱和腈单元和20〜35wt。（甲基）丙烯酸烷基酯单元的总数和可与不饱和腈和（甲基）丙烯酸烷基酯共聚的其它单体的单位％和（B）3〜20重量％％的聚醚酯酰胺，其中组分（A）与组分（B）的熔体粘度在210℃下的比例为0.5至5，剪切速率为102秒-1和0.5至3 剪切速率为103秒-1，基质成分（A）与成分（B）的折射率差为0.2以下。

7. 发明授权

US08053378B2 Modified phenolic resin, epoxy resin composition containing the same, and prepreg containing the composition 有权
标题翻译：改性酚醛树脂，含有它的环氧树脂组合物和含有该组合物的预浸料
公开(公告)号：US08053378B2
公开(公告)日：2011-11-08
申请号：US11793710
申请日：2005-12-16
申请人： Takaharu Abe , Sunao Maeda , Tatsuhiro Urakami , Yukio Fukui , Masanobu Maeda , Hiroaki Narisawa
发明人： Takaharu Abe , Sunao Maeda , Tatsuhiro Urakami , Yukio Fukui , Masanobu Maeda , Hiroaki Narisawa
IPC分类号： B32B17/02
CPC分类号： C08G59/621 , B32B15/08 , B32B15/20 , B32B17/04 , C08G61/126 , H01L23/145 , H01L23/293 , H01L2924/0002 , H05K1/0326 , Y10S428/901 , Y10T428/31645 , Y10T442/2992 , H01L2924/00
摘要： A modified phenolic resin that is an alternate copolymer of at least one phenolic compound selected from phenol, naphthols, and their derivatives and a compound having a divalent connecting group, said modified phenolic resin having a side chain attached to an aromatic ring having a hydroxy group, said side chain being represented by defined formula (1-1). The modified phenolic resin can be used as a hardener for epoxy resins and a cured product thereof has excellent adhesion and flame retardancy without impairing properties of conventional phenolic resins such as gel time, glass transition temperature, moisture absorption, and mechanical properties. The epoxy resin composition can provide excellent adhesion and flame retardancy as hardeners for semiconductor sealing epoxy resins, insulating materials for electrical/electronic components, and laminates (printed circuit boards). A prepreg containing a glass substrate impregnated with the epoxy resin composition, a laminate, and an electronic circuit board are also provided.
摘要翻译：作为选自苯酚，萘酚及其衍生物中的至少一种酚类化合物和具有二价连接基团的化合物的交替共聚物的改性酚醛树脂，所述改性酚醛树脂具有连接到具有羟基的芳环上的侧链所述侧链由定义的式（1-1）表示。改性酚醛树脂可用作环氧树脂的固化剂，其固化产物具有优异的粘合性和阻燃性，而不损害常规酚醛树脂的性能，如凝胶时间，玻璃化转变温度，吸湿性和机械性能。环氧树脂组合物可以提供优异的粘合性和阻燃性，作为用于半导体密封环氧树脂的硬化剂，用于电气/电子部件的绝缘材料和层压板（印刷电路板））。还提供了包含浸渍有环氧树脂组合物的玻璃基板，层压板和电子电路板的预浸料。

8. 发明授权

US07560724B2 Storage device with reversible resistance change elements 有权
标题翻译：具有可逆电阻变化元件的存储装置
公开(公告)号：US07560724B2
公开(公告)日：2009-07-14
申请号：US11632594
申请日：2005-07-08
申请人： Katsuhisa Aratani , Tomohito Tsushima , Hiroaki Narisawa , Wataru Otsuka , Hidenari Hachino
发明人： Katsuhisa Aratani , Tomohito Tsushima , Hiroaki Narisawa , Wataru Otsuka , Hidenari Hachino
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： G11C13/0011 , G11C13/0069 , G11C2013/009 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/149 , H01L45/1675
摘要： It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elements 10 having recording layers 2, 3 provided between two electrodes 1, 4 and in which resistance values of the recording layers 2, 3 are reversibly changed with application of electric potential with different polarities to these two electrodes 1, 4, at least part of the layers 2, 3 constructing the recording layers of the resistance changing elements 10 being formed commonly by the same layer in a plurality of adjacent memory cells.
摘要翻译：旨在提供具有能够以高密度容易地制造的布置的存储元件。存储元件包括电阻变化元件10，其具有设置在两个电极1,4之间的记录层2,3，并且其中记录层2,3的电阻值可通过向这两个电极1施加不同极性的电位而可逆地改变，如图4所示，构成电阻变化元件10的记录层的层2,3的至少一部分由多个相邻存储单元中的相同层共同形成。

9. 发明授权

US5728775A Heat-resistant high-nitrile polymer compositions and process for preparing same 失效
标题翻译：耐热高腈聚合物组合物及其制备方法
公开(公告)号：US5728775A
公开(公告)日：1998-03-17
申请号：US759961
申请日：1996-12-03
申请人： Hiroaki Narisawa , Masahiro Kaneko , Mitsuo Kawata , Syuichi Yamaguchi , Shinichi Asai , Makoto Someda
发明人： Hiroaki Narisawa , Masahiro Kaneko , Mitsuo Kawata , Syuichi Yamaguchi , Shinichi Asai , Makoto Someda
IPC分类号： C08F279/02 , C08L51/04 , C08L33/20
CPC分类号： C08F279/02
摘要： A heat-resistant high-nitrile polymer composition obtained by the graft copolymerization of 100 parts by weight of a monomer mixture comprising 50 to 80% by weight of an unsaturated nitrile monomer, a maleimide monomer, an aromatic vinyl monomer, and a monomer copolymerizable with the foregoing monomers, in the presence of 1 to 40 parts by weight of a conjugated diene-based synthetic rubber containing not less than 50% by weight of a conjugated diene monomer unit, wherein the concentration of residual maleimide monomer in the polymer composition is not greater than 200 ppm by weight. This polymer composition is suitable for use as a molding material for extrusion molding, blow molding, injection molding and the like, and is useful in applications which require gas barrier properties, chemical resistance, non-adsorptive properties and the like, and which require use in automobiles, heat resistance sufficient for heat filling, and safety and hygienic properties.
摘要翻译：一种耐热高腈聚合物组合物，其通过将100重量份的单体混合物接枝共聚获得，所述单体混合物包含50至80重量％的不饱和腈单体，马来酰亚胺单体，芳族乙烯基单体和可与上述单体在1〜40重量份含有不少于50重量％的共轭二烯单体单元的共轭二烯系合成橡胶的存在下，其中聚合物组合物中的残余马来酰亚胺单体的浓度不是大于200ppm重量。该聚合物组合物适合用作挤出成型，吹塑成型，注射成型等的成型材料，可用于需要阻气性，耐化学性，不吸附性等的应用中，需要使用在汽车中，耐热性足以用于热填充，以及安全和卫生性能。

10. 发明授权

US5113300A Thin film magnetic head 失效
标题翻译：薄膜磁头
公开(公告)号：US5113300A
公开(公告)日：1992-05-12
申请号：US752220
申请日：1991-08-21
申请人： Yoshito Ikeda , Hiroaki Narisawa , Noboru Wakabayashi
发明人： Yoshito Ikeda , Hiroaki Narisawa , Noboru Wakabayashi
IPC分类号： G11B5/31
CPC分类号： G11B5/31 , G11B5/3116
摘要： A thin film magnetic head which includes a substrate of magnetic or nonmagnetic material, an upper magnetic film on the substrate, a coil conductor on the substrate, and a lower magnetic film on the substrate, the lower magnetic film having a groove formed therein for receiving the coil conductor therein. In the preferred form of the present invention, the thickness of the lower magnetic film is at least 0.3 times the thickness of the upper magnetic film when the substrate is composed of a magnetic material and at least 0.8 times the thickness of the upper magnetic film when the substrate is composed of a nonmagnetic material.
摘要翻译：一种薄膜磁头，其包括磁性或非磁性材料的衬底，衬底上的上部磁性膜，衬底上的线圈导体和衬底上的下部磁性膜，下部磁性膜具有形成在其中的槽，用于接收其中的线圈导体。在本发明的优选形式中，当基板由磁性材料构成时，下部磁性膜的厚度为上部磁性膜的厚度的至少0.3倍，并且当上部磁性膜的厚度为至少0.8倍时基板由非磁性材料构成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式