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1. 发明授权

US09542961B2 Magnetoresistive sensor with stop-layers 有权
标题翻译：具有停止层的磁阻传感器
公开(公告)号：US09542961B2
公开(公告)日：2017-01-10
申请号：US14309012
申请日：2014-06-19
申请人： Seagate Technology LLC
发明人： Carolyn Pitcher Van Dorn , Thomas Roy Boonstra , Eric Walter Singleton , Shaun Eric McKinlay
IPC分类号： G11B5/39 , G11B5/31 , G11B5/11 , G11B5/40
CPC分类号： G11B5/39 , G11B5/11 , G11B5/112 , G11B5/3169 , G11B5/3912 , G11B5/40 , Y10T428/1121 , Y10T428/1164
摘要： Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.
摘要翻译：用于传感器头的制造读取器结构的公差继续增长，并且相应的存储介质中的存储密度增加。在读取器结构的制造期间可以利用读取器停止层来保护读取器结构的各个层免于衰退和/或划伤，同时处理读取器结构的其它未受保护的层。例如，在机械或化学机械抛光期间，停止层可能具有非常低的抛光速率。可以显着地抛光周围区域，而由具有非常低的抛光速率的停止层保护的结构基本上不受影响。然后可以例如在机械或化学机械抛光完成之后通过蚀刻去除停止层。

2. 发明授权

US09437224B2 Stack with wide seed layer 有权
标题翻译：堆叠宽种子层
公开(公告)号：US09437224B2
公开(公告)日：2016-09-06
申请号：US14463331
申请日：2014-08-19
申请人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
发明人： Eric Walter Singleton , Jae-Young Yi , Konstantin Nikolaev , Victor Boris Sapozhnikov , Stacey Christine Wakeham , Shaun Eric McKinlay
IPC分类号： G01R33/09 , G11B5/39 , H01L43/08
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3909 , G11B5/3912 , G11B5/3932 , G11B5/398 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.
摘要翻译：具有种子层结构的堆叠，其第一部分具有第一交叉轨道宽度和沉积在种子层结构上并且具有第二交叉轨道宽度的自由层，其中第一交叉轨道宽度大于第二交叉曲线宽度在一个实施方案中，种子层结构还包括反铁磁（AFM）层和合成反铁磁（SAF）层。在一个替代实施方案中，种子层结构的交叉轨道宽度基本上等于两个永磁体的自由层的组合交叉轨道宽度和交叉轨道宽度。

3. 发明授权

US09396742B1 Magnetoresistive sensor for a magnetic storage system read head, and fabrication method thereof 有权
公开(公告)号：US09396742B1
公开(公告)日：2016-07-19
申请号：US14657420
申请日：2015-03-13
申请人： Western Digital (Fremont), LLC
发明人： Cheng-Han Yang , Chen-Jung Chen , Christian Kaiser , Yuankai Zheng , Qunwen Leng , Mahendra Pakala
IPC分类号： G11B5/00 , G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , G11B5/3909 , G11B2005/3996 , Y10T29/49032 , Y10T29/49034 , Y10T428/1114 , Y10T428/1121
摘要： A magnetic read transducer including a magnetoresistive sensor is described, as well as a fabrication method thereof. The magnetoresistive sensor includes a cap layer overlaying a free layer. The cap layer is situated with a first thickness to absorb boron from the free layer. The magnetoresistive sensor is annealed, and boron is diffused from the free layer and absorbed by the cap layer, improving the magnetic performance of the free layer. The cap layer thickness is then reduced to a second thickness, thereby reducing the shield-to-shield (SS) stack spacing of the magnetoresistive sensor and allowing for increased areal recording density.

4. 发明授权

US09183857B2 Magnetic devices having shields including a nickel alloy 有权
标题翻译：具有包括镍合金的屏蔽的磁性装置
公开(公告)号：US09183857B2
公开(公告)日：2015-11-10
申请号：US13666255
申请日：2012-11-01
申请人： SEAGATE TECHNOLOGY LLC
发明人： Meng Zhu , Michael C. Kautzky
IPC分类号： G11B5/11 , G11B5/39 , G11B5/31
CPC分类号： G11B5/3906 , G11B5/11 , G11B5/3146 , G11B5/3912 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
摘要： A device including a magnetoresistive sensor; a top shield; and a bottom shield, wherein the magnetoresistive sensor is positioned between the top shield and the bottom shield, and wherein at least one of the bottom shield and the top shield include NiFeX, wherein X is chosen from Nb, Mo, Ta, or W.
摘要翻译：一种包括磁阻传感器的装置; 顶层盾牌和底部屏蔽，其中所述磁阻传感器位于所述顶部屏蔽和所述底部屏蔽之间，并且其中所述底部屏蔽和所述顶部屏蔽中的至少一个包括NiFeX，其中X选自Nb，Mo，Ta或W.

5. 发明申请

US20150249210A1 TMR Device with Novel Free Layer Structure 审中-公开
标题翻译：具有新型自由层结构的TMR器件
公开(公告)号：US20150249210A1
公开(公告)日：2015-09-03
申请号：US14712943
申请日：2015-05-15
申请人： Headway Technologies, Inc.
发明人： Tong Zhao , Hui-Chuan Wang , Yu-Chen Zhou , Min Li , Kunliang Zhang
IPC分类号： H01L43/12 , H01L43/10
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01L43/08 , H01L43/10 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A method of fabricating a TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, CoBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is
摘要翻译：一种制造TMR传感器的方法，其包括具有至少一个由CoFeB，CoFeBM，CoB，CoBM或CoBLM制成的含B（BC）层的自由层和由公开了其中L和M是Ni，Ta，Ti，W，Zr，Hf，Tb或Nb之一的CoFe，CoFeM或CoFeLM。在每个实施例中，NBC层接触隧道势垒，并且各自具有2至8埃厚度的NBC层以与10至80埃厚的BC层交替地形成。总自由层厚度<100埃。 TMR传感器可以用一步或两步法进行退火。这里描述的自由层配置能够在实现高TMR比，低磁致伸缩，低RA和低Hc值的同时实现显着的降噪（SNR增强）。

6. 发明授权

US09099121B2 Current-perpendicular-to-plane magnetoresistive read sensor with grooved contact and free layers 有权
标题翻译：电流垂直于平面的磁阻读取传感器，带有沟槽接触和自由层
公开(公告)号：US09099121B2
公开(公告)日：2015-08-04
申请号：US14293199
申请日：2014-06-02
申请人： International Business Machines Corporation
发明人： Giovanni Cherubini , Simeon Furrer , Jens Jelitto , Mark A. Lantz
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , G11B5/3909 , G11B5/3912 , G11B5/3929 , G11B5/3948 , G11B5/3958 , G11B2005/3996 , Y10T428/1114 , Y10T428/1121 , Y10T428/1129
摘要： A current-perpendicular-to-plane magnetoresistive read sensor includes a stack of layers extending along a stacking direction, and an edge surface parallel to the stacking direction that forms at least part of a bearing surface of the read sensor, the bearing surface designed to face a recording medium. The stack of layers includes a first contact layer, a ferromagnetic free layer whose magnetic orientation varies according to an applied magnetic field, above the first contact layer, a non-magnetic layer above the ferromagnetic layer, a ferromagnetic spin injection layer above the non-magnetic layer, and a second contact layer above the spin injection layer, such that a current can flow between the second contact layer and the first contact layer along a current-perpendicular-to-plane direction, parallel to the stacking direction. The stack of layers further includes a series of structures extending along a direction parallel to the bearing surface and perpendicular to the stacking direction.
摘要翻译：电流垂直于平面的磁阻读取传感器包括沿堆叠方向延伸的层叠层，以及平行于层叠方向的边缘表面，其形成读取传感器的支承表面的至少一部分，该轴承表面被设计为面对记录介质。层叠层包括第一接触层，铁磁自由层，其磁取向根据所施加的磁场而变化，在第一接触层上方，铁磁层上方的非磁性层，非磁性层上方的铁磁自旋注入层，磁性层和自旋注入层上方的第二接触层，使得电流可以沿平行于堆叠方向的电流垂直于平面的方向在第二接触层和第一接触层之间流动。层叠层还包括沿着平行于支承表面并垂直于层叠方向的方向延伸的一系列结构。

7. 发明授权

US09007728B1 Method and system for fabricating magnetic transducers with improved pinning 有权
标题翻译：用于制造具有改进钉扎功能的磁换能器的方法和系统
公开(公告)号：US09007728B1
公开(公告)日：2015-04-14
申请号：US13533040
申请日：2012-06-26
申请人： Feng Liu , Prakash Mani , Christian Kaiser , Laurence L. Chen
发明人： Feng Liu , Prakash Mani , Christian Kaiser , Laurence L. Chen
IPC分类号： G11B5/39 , G11B5/60
CPC分类号： G11B5/60 , G01R33/098 , G11B5/3163 , G11B5/3932 , G11B2005/0008 , H01L43/12 , Y10T428/1121 , Y10T428/1143
摘要： A method comprises providing a magnetic element including a free layer, a pinned layer, a nonmagnetic spacer layer between the free and pinned layers, and a pinning layer adjacent the pinned layer. The free layer is biased in a first direction. The pinned layer has a first layer having a first magnetization, a second layer having a second magnetization, and a nonmagnetic layer between the first and second layer. The first magnetization is pinned parallel to a second direction substantially perpendicular to the first direction and substantially perpendicular to the ABS. The second magnetization is antiparallel to the second direction. The pinning layer is oriented along the second direction. The method further comprises providing a hard bias structure having a hard bias magnetization, initializing the hard bias magnetization along the second direction, performing at least one thermal treatment, and resetting the hard bias magnetization substantially along the first direction.
摘要翻译：一种方法包括提供包括自由层，钉扎层，在自由层和被钉扎层之间的非磁性间隔层的磁性元件和邻近被钉扎层的钉扎层。自由层在第一方向上偏置。固定层具有具有第一磁化的第一层，具有第二磁化的第二层和在第一层和第二层之间的非磁性层。第一磁化被平行于基本上垂直于第一方向并基本上垂直于ABS的第二方向被钉扎。第二磁化与第二方向反平行。钉扎层沿着第二方向定向。该方法还包括提供具有硬偏压磁化的硬偏压结构，沿着第二方向初始化硬偏磁化强度，执行至少一个热处理，以及基本上沿第一方向复位硬偏磁。

8. 发明申请

US20150041935A1 High Thermal Stability Reference Structure with Out-of-Plane Anisotropy for Magnetic Device Applications 审中-公开
标题翻译：用于磁性器件应用的具有非平面各向异性的高热稳定性参考结构
公开(公告)号：US20150041935A1
公开(公告)日：2015-02-12
申请号：US14493416
申请日：2014-09-23
申请人： Headway Technologies, Inc.
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L43/10 , H01L43/02
CPC分类号： H01L43/12 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/66 , G11B5/84 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/305 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Enhanced Hc and Hk in addition to higher thermal stability up to at least 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. Dusting layers are deposited at room temperature to 400° C. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell for STT-MRAM designs.
摘要翻译：通过在合成反铁磁（SAF）结构中在隔离物的顶表面和底表面上添加除尘层，可以在磁性器件中实现增强的Hc和Hk以及至多400℃的更高的热稳定性，从而得到RL1 / DL1 / 间隔/ DL2 / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。在室温至400℃下沉积除尘层。RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压材料。参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并且增加用于STT-MRAM设计的存储器单元的保留时间。

9. 发明授权

US08947835B2 Tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure 有权
标题翻译：隧道磁阻（TMR）读取传感器具有漫长的扩散路径和异常接口的感应层结构
公开(公告)号：US08947835B2
公开(公告)日：2015-02-03
申请号：US13335642
申请日：2011-12-22
申请人： Tsann Lin
发明人： Tsann Lin
IPC分类号： G11B5/39 , G11B5/40
CPC分类号： G11B5/3906 , G01R33/098 , G11B5/3163 , G11B5/3909 , G11B5/398 , G11B5/40 , H01F10/3254 , H01F10/3295 , Y10T29/4902 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： The invention provides a tunneling magnetoresistance (TMR) read sensor with a long diffusion path and ex-situ interfaces in a sense layer structure. The sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, and a third sense layer preferably formed of a ferromagnetic Ni—Fe film. The sense layer structure has a long diffusion path (defined as a total thickness of the first and second sense layers) and ex-situ interfaces for suppressing unwanted diffusions of Ni atoms. Alternatively, the sense layer structure comprises a first sense layer preferably formed of a ferromagnetic Co—Fe film, a second sense layer preferably formed of a ferromagnetic Co—Fe—B film, a third sense layer preferably formed of a ferromagnetic Co—Fe—B—Hf film, and a fourth sense layer preferably formed of a ferromagnetic Ni—Fe film.
摘要翻译：本发明提供了一种在感应层结构中具有长扩散路径和非原位界面的隧道磁阻（TMR）读取传感器。感测层结构包括优选由铁磁Co-Fe膜形成的第一感测层，优选由铁磁性Co-Fe-B膜形成的第二感测层和优选由铁磁性Ni-Fe膜形成的第三感测层。感应层结构具有长的扩散路径（定义为第一和第二感测层的总厚度）和用于抑制Ni原子的不期望的扩散的非原位界面。或者，感测层结构包括优选由铁磁性Co-Fe膜形成的第一感测层，优选由铁磁性Co-Fe-B膜形成的第二感测层，优选由铁磁性Co-Fe-B膜形成的第三感测层， B-Hf膜，以及优选由铁磁性Ni-Fe膜形成的第四感测层。

10. 发明申请

US20140335377A1 CURRENT PERPENDICULAR TO PLANE MAGNETORESISTIVE SENSOR EMPLOYING HALF METAL ALLOYS FOR IMPROVED SENSOR PERFORMANCE 有权
标题翻译：目前平板电磁传感器采用半金属合金改善传感器性能
公开(公告)号：US20140335377A1
公开(公告)日：2014-11-13
申请号：US14339369
申请日：2014-07-23
申请人： HGST Netherlands B.V.
发明人： Hardayal S. Gill
IPC分类号： G11B5/31
CPC分类号： G11B5/313 , B82Y10/00 , B82Y25/00 , G01R33/091 , G01R33/098 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3272 , H01F10/3286 , H01F10/3295 , Y10T428/1121
摘要： A magnetoresistive sensor having employing a Mn containing Huesler alloy for improved magnetoresistive performance in a structure that minimizes corrosion and Mn migration. The sensor can be constructed with a pinned layer structure that includes a lamination of layers of Co2MnX and CoFe, where X is Al, Ge or Si. The Co2MnX can be sandwiched between the layers of CoFe to prevent Mn migration into the spacer/barrier layer. The free layer can also be constructed as a lamination of Co2MnX and CoFe layers, and may also be constructed so that the Co2MnX layer is sandwiched between CoFe layers to prevent Mn migration.
摘要翻译：一种磁阻传感器，其使用含Mn的Huesler合金，在使腐蚀和Mn迁移最小化的结构中提高磁阻性能。该传感器可以被构造成具有包层层结构，其包括Co2MnX和CoFe层的叠层，其中X是Al，Ge或Si。 Co2MnX可以夹在CoFe层之间以防止Mn迁移到间隔物/阻挡层中。自由层也可以被构造为Co2MnX和CoFe层的叠层，也可以被构造成使Co 2 Mn x层夹在CoFe层之间以防止Mn迁移。

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