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    • 9. 发明申请
    • NON-VOLATILE MEMORY CELL HEALING
    • 非易失性记忆细胞治疗
    • US20100165747A1
    • 2010-07-01
    • US12721165
    • 2010-03-10
    • Andrei MihneaWilliam KueberMark Helm
    • Andrei MihneaWilliam KueberMark Helm
    • G11C16/04
    • G11C16/3404G11C16/0483
    • Embodiments of the present disclosure provide methods, devices, modules, and systems for healing non-volatile memory cells. One method includes biasing a first select gate transistor coupled to a string of memory cells at a first voltage, biasing a second select gate transistor coupled to the string at a second voltage, applying a first healing voltage to a first edge word line in order to extract charge accumulated between the first select gate transistor and a first edge memory cell stack of the string, and applying a second healing voltage to a second edge word line in order to extract charge accumulated between the second select gate transistor and a second edge memory cell stack of the string.
    • 本公开的实施例提供了用于治疗非易失性存储器单元的方法,装置,模块和系统。 一种方法包括以第一电压偏置耦合到一串存储器单元的第一选择栅极晶体管,以第二电压偏置耦合到串的第二选择栅极晶体管,将第一愈合电压施加到第一边缘字线,以便 提取在第一选择栅极晶体管和串的第一边缘存储单元堆之间累积的电荷,以及向第二边缘字线施加第二愈合电压,以便提取在第二选择栅极晶体管和第二边缘存储单元之间累积的电荷 堆栈的字符串。