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    • 5. 发明授权
    • Information presentation system and in-vehicle apparatus
    • 信息呈现系统和车载设备
    • US09037345B2
    • 2015-05-19
    • US14001070
    • 2012-03-08
    • Akira Inoue
    • Akira Inoue
    • G06F3/14H04M1/725
    • G06F3/1423H04M1/7253H04M1/72577
    • A mobile terminal displays a screen image provided by an image data which is produced. An in-vehicle apparatus is fixed to a vehicle or is mounted on the vehicle to be portable. The mobile terminal sends the image data to the in-vehicle apparatus through communication such that a vehicle display portion of the in-vehicle apparatus displays a screen image provided by the image data. In a case where a communication between the in-vehicle apparatus and the mobile terminal is established, when one of the mobile terminal or the in-vehicle apparatus, in which an input operation has been performed prior to the other of the mobile terminal or the in-vehicle apparatus, is in operation, only the one of the mobile terminal or the in-vehicle apparatus is operable.
    • 移动终端显示由所生成的图像数据提供的屏幕图像。 车载设备固定在车辆上或安装在车辆上以便携带。 移动终端通过通信将图像数据发送到车载设备,使得车载设备的车辆显示部分显示由图像数据提供的屏幕图像。 在建立车载设备与移动终端之间的通信的情况下,当移动终端或车载设备中的一个在移动终端或另一个移动终端之前进行了输入操作时 车载设备正在操作中,只有移动终端或车载设备中的一个可操作。
    • 10. 发明申请
    • NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREFOR
    • 氮化物半导体发光元件及其制造方法
    • US20130214288A1
    • 2013-08-22
    • US13880027
    • 2012-05-02
    • Toshiya YokogawaJunko IwanagaAkira Inoue
    • Toshiya YokogawaJunko IwanagaAkira Inoue
    • H01L33/32
    • H01L33/32H01L33/02H01L33/16
    • A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8×10−4≦D≦14.1×10−4. The area of the p-side electrode, S, is in the range of 1×102 μm2≦S≦9×104 μm2. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm2.
    • 实施方式的氮化物系半导体发光元件具有半导体层叠结构,该半导体层叠结构具有作为m面的生长面并由GaN系半导体构成。 半导体多层结构包括n型半导体层,p型半导体层,设置在p型半导体层上的p侧电极以及介于n型半导体层和p型半导体层之间的有源层 半导体层。 有源层的厚度与n型半导体层的厚度D之比在1.8×10 -4 @ D @ 14.1×10 -4的范围内。 p侧电极S的面积在1×102mum2 @ S @ 9×104mum2的范围内。 导致外部量子效率最大值的88%的最大电流密度不小于2A / mm2。