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1. 发明申请

US20110133154A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20110133154A1
公开(公告)日：2011-06-09
申请号：US12782925
申请日：2010-05-19
申请人： Akira Tanaka , Yoko Motojima
发明人： Akira Tanaka , Yoko Motojima
IPC分类号： H01L33/04 , H01L33/30 , H01L33/36
CPC分类号： H01L33/42 , H01L33/145
摘要： A light emitting device includes: a laminated body including a first conductivity type layer, a light emitting layer provided on the first conductivity type layer, and a second conductivity type layer provided on the light emitting layer, the laminated body being made of InxGayAl1-x-yN (0≦x≦1, 0≦y≦1, x+y≦1); a first electrode provided on the first conductivity type layer exposed to a bottom surface of a step difference provided in the laminated body; a translucent electrode provided on one portion of an upper face of the second conductivity type layer; and a second electrode provided on the translucent electrode and being smaller than the translucent electrode. A length of the other portion of the upper face of the second conductivity layer between an end portion of the translucent electrode and the side face of the step difference is 30 μm or more along a line connecting between a center of the first electrode and a center of the second electrode.
摘要翻译：发光器件包括：层叠体，其包括第一导电型层，设置在第一导电类型层上的发光层和设置在发光层上的第二导电类型层，所述层叠体由In x Ga y Al 1-x -yN（0＆nlE; x＆nlE; 1,0＆nlE; y＆nlE; 1，x + y＆nlE; 1）; 第一电极，其设置在暴露于设置在层叠体中的台阶差的底面的第一导电类型层上; 设置在所述第二导电类型层的上表面的一部分上的半透明电极; 以及设置在所述透光性电极上并且比所述透光性电极小的第二电极。另外，透光性电极的端部与台阶差的侧面之间的第二导电层的上表面的另一部分的长度沿着连接在第一电极的中心与中心之间的线为30μm以上的第二电极。

2. 发明授权

US08742395B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08742395B2
公开(公告)日：2014-06-03
申请号：US13598367
申请日：2012-08-29
申请人： Akira Tanaka , Yoko Motojima
发明人： Akira Tanaka , Yoko Motojima
IPC分类号： H01L33/06
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405
摘要： In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape.
摘要翻译：在一个实施例中，半导体发光器件包括堆叠结构，第一电极和第二电极。第一半导体层被分成几个部分。从发光层侧向第三半导体层侧取出光。第一电极包括连接到第一半导体层的第一区域和直接连接到第二半导体层的第二区域。第二电极连接到第三半导体层，从上方向设置在第二区域的上方，具有细线形状或点状。

3. 发明申请

US20130181187A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20130181187A1
公开(公告)日：2013-07-18
申请号：US13598367
申请日：2012-08-29
申请人： Akira TANAKA , Yoko Motojima
发明人： Akira TANAKA , Yoko Motojima
IPC分类号： H01L33/06
CPC分类号： H01L33/38 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/32 , H01L33/382 , H01L33/387 , H01L33/405
摘要： In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape.
摘要翻译：在一个实施例中，半导体发光器件包括堆叠结构，第一电极和第二电极。第一半导体层被分成几个部分。从发光层侧向第三半导体层侧取出光。第一电极包括连接到第一半导体层的第一区域和直接连接到第二半导体层的第二区域。第二电极连接到第三半导体层，从上方向设置在第二区域的上方，具有细线形状或点状。

4. 发明授权

US08686398B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US08686398B2
公开(公告)日：2014-04-01
申请号：US13599852
申请日：2012-08-30
申请人： Akira Tanaka , Yoko Motojima
发明人： Akira Tanaka , Yoko Motojima
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要翻译：半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

5. 发明申请

US20130228742A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
标题翻译：半导体发光器件
公开(公告)号：US20130228742A1
公开(公告)日：2013-09-05
申请号：US13599852
申请日：2012-08-30
申请人： Akira Tanaka , Yoko Motojima
发明人： Akira Tanaka , Yoko Motojima
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device includes a first conductivity-type first semiconductor layer, a second conductivity-type second semiconductor layer, a semiconductor light emitting layer, and first and second electrodes. The semiconductor light emitting layer is provided between the first semiconductor layer and the second semiconductor layer, and includes a multiple quantum well structure. The quantum well structure includes well layers and barrier layers each laminated alternately, each of the well layers being not less than 6 nm and not more than 10 nm. The first and second electrodes are electrically connected to the first and second semiconductor layers such that current flows in a direction substantially vertical to the main surface.
摘要翻译：半导体发光器件包括第一导电型第一半导体层，第二导电型第二半导体层，半导体发光层以及第一和第二电极。半导体发光层设置在第一半导体层和第二半导体层之间，并且包括多量子阱结构。量子阱结构包括交替层叠的阱层和势垒层，每个阱层不小于6nm且不大于10nm。第一和第二电极电连接到第一和第二半导体层，使得电流在基本垂直于主表面的方向上流动。

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