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    • 5. 发明授权
    • Mercury-containing copper oxide superconductor
    • 含汞氧化铜超导体
    • US06699819B2
    • 2004-03-02
    • US10445246
    • 2003-05-27
    • Nobuyoshi InoueTsuyoshi SuganoSeiji AdachiKeiichi Tanabe
    • Nobuyoshi InoueTsuyoshi SuganoSeiji AdachiKeiichi Tanabe
    • H01L3924
    • H01L39/2451Y10T29/49014
    • A superconductor having at least one Hg—M—Cu—O (M=Ba, Sr and/or Ca) superconducting film provided on a substrate and having a thickness of between 300 Å to 950 Å. The superconductor may be prepared by forming, on a substrate, a precursor laminate composed of a first, M—Cu—O film and a second, Hg—O film. The precursor laminate film-bearing substrate is placed in a closed vacuum chamber together with a first pellet of HgO, MO and CuO and a second pellet of MO and CuO. The contents in the chamber are heated to form, on the substrate, a superconducting Hg—M—Cu—O film. The thickness of the first M—Cu—O film of the precursor is controlled so that the thickness of the superconducting Hg—M—Cu—O film is in the range of between 300 Å to 950 Å.
    • 具有至少一个Hg-M-Cu-O(M = Ba,Sr和/或Ca)超导膜的超导体,其设置在衬底上并具有介于300至950之间的厚度。 超导体可以通过在基材上形成由第一M-Cu-O膜和第二Hg-O膜构成的前体叠层体来制备。 将前体层压薄膜承载基材与HgO,MO和CuO的第一颗粒和MO和CuO的第二颗粒一起放置在封闭的真空室中。 加热室中的内容物,在基板上形成超导Hg-M-Cu-O膜。 控制前体的第一M-Cu-O膜的厚度,使得超导Hg-M-Cu-O膜的厚度在300至950的范围内。
    • 7. 发明申请
    • Josephson device, method of forming Josephson device and superconductor circuit
    • 约瑟夫逊装置,形成约瑟夫逊装置和超导体电路的方法
    • US20080051292A1
    • 2008-02-28
    • US11895256
    • 2007-08-23
    • Hironori WakanaSeiji AdachiKoji TsuboneKeiichi Tanabe
    • Hironori WakanaSeiji AdachiKoji TsuboneKeiichi Tanabe
    • H01L39/22
    • H01L39/225H01L39/2496Y10S505/702
    • A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.
    • 约瑟夫逊装置包括依次堆叠的第一超导电极层,阻挡层和第二超导电极层。 第一和第二超导电极层由具有(RE)1(AE)2 Cu 3 O 3的氧化物超导体材料制成, 其中元素RE为选自Y,La,Pr,Nd,Sm,Eu,Gd,Dy,Ho,Er,Tm,Yb和Lu中的至少一种元素 元素AE为选自Ba,Sr和Ca中的至少一种元素。 阻挡层由包括元素RE,元素AE,Cu和氧的材料制成,其中在形成阻挡层的材料内的阳离子中Cu含量在35Aa的范围内。 %至55 At。 %,RE含量在12 At范围内。 %至30 At。 %,并且阻挡层具有与第一和第二超导电极层的组成不同的组成。
    • 10. 发明授权
    • Josephson device, method of forming Josephson device and superconductor circuit
    • 约瑟夫逊装置,形成约瑟夫逊装置和超导体电路的方法
    • US08032196B2
    • 2011-10-04
    • US11895256
    • 2007-08-23
    • Hironori WakanaSeiji AdachiKoji TsuboneKeiichi Tanabe
    • Hironori WakanaSeiji AdachiKoji TsuboneKeiichi Tanabe
    • H01L29/06H01L27/00H01L29/00H01L39/22
    • H01L39/225H01L39/2496Y10S505/702
    • A Josephson device includes a first superconducting electrode layer, a barrier layer and a second superconducting electrode layer that are successively stacked. The first and second superconducting electrode layers are made of an oxide superconductor material having (RE)1(AE)2Cu3Oy as a main component, where an element RE is at least one element selected from a group consisting of Y, La, Pr, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb and Lu, and an element AE is at least one element selected from a group consisting of Ba, Sr and Ca. The barrier layer is made of a material that includes the element RE, the element AE, Cu and oxygen, where in cations within the material forming the barrier layer, a Cu content is in a range of 35 At. % to 55 At. % and an RE content is in a range of 12 At. % to 30 At. %, and the barrier layer has a composition different from compositions of the first and second superconducting electrode layers.
    • 约瑟夫逊装置包括依次堆叠的第一超导电极层,阻挡层和第二超导电极层。 第一和第二超导电极层由具有(RE)1(AE)2Cu 3 O y作为主要成分的氧化物超导体材料制成,其中元素RE为选自Y,La,Pr,Nd中的至少一种元素 ,Sm,Eu,Gd,Dy,Ho,Er,Tm,Yb和Lu,元素AE为选自Ba,Sr和Ca中的至少一种元素。 阻挡层由包括元素RE,元素AE,Cu和氧的材料制成,其中在形成阻挡层的材料内的阳离子中Cu含量在35Aa的范围内。 %至55 At。 %,RE含量在12 At范围内。 %至30 At。 %,并且阻挡层具有与第一和第二超导电极层的组成不同的组成。