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1. 发明授权

US10020438B2 Magnetic topological nanowires 有权
公开(公告)号：US10020438B2
公开(公告)日：2018-07-10
申请号：US14818002
申请日：2015-08-04
申请人： THE TRUSTEES OF PRINCETON UNIVERSITY
发明人： Ali Yazdani , Andrei Bernevig
IPC分类号： H01L29/82 , H01L39/22 , B82Y10/00 , H01L39/12 , H01F1/00 , G06N99/00
CPC分类号： H01L39/22 , B82Y10/00 , G06N10/00 , H01F1/0072 , H01L39/12
摘要： A magnetic topological nanowire structure comprises a superconductor and a quasi-1D magnetic nanowire. The quasi-1D magnetic nanowire is coupled to or embedded in the superconductor to produce a self-contained interaction resulting in a spatially separated pair of Majorana fermions. The pair of Majorana fermions corresponds to the topological superconductor and each of the pair of the Majorana fermions are localized near a respective endpoint of the nanowire.

2. 发明授权

US09255839B2 Detector of single microwave photons propagating in a guide 有权
标题翻译：在微波导管中传播的单个微波光子的探测器
公开(公告)号：US09255839B2
公开(公告)日：2016-02-09
申请号：US13823822
申请日：2011-09-20
申请人： Mikko Möttönen , Jukka Pekola
发明人： Mikko Möttönen , Jukka Pekola
IPC分类号： G01J1/44 , B82Y10/00 , G01J1/42 , G06N99/00 , H01L39/22 , G01J5/20 , B82Y15/00
CPC分类号： G01J1/44 , B82Y10/00 , B82Y15/00 , G01J1/42 , G01J5/20 , G06N99/002 , H01L39/22
摘要： The present invention introduces a detector that is able to detect single microwave photons propagating in a waveguide. The waveguide of the invention is lowered to a temperature where it becomes superconductive. Disposed between a middle wire and a ground plane of the waveguide is a very small piece of a desired normal metal, whereby so-called SN contacts are formed between these materials. A separate reflection measurement circuit is coupled to the normal metal piece. When the impedance of the waveguide is matched to the impedance of the normal metal piece as well as possible, a photon propagating in the waveguide is most likely absorbed in the normal metal. The absorption slightly raises the temperature of the piece, which further changes the impedance observed in a so-called SIN junction between the reflection measurement circuit and the piece. The changed amplitude and phase are detectable at the outlet obtained from a mixer of the reflection measurement circuit, whereby a single absorbed photon can be detected. In principle, the present method and device enable quantum calculation in view of future applications.
摘要翻译：本发明引入了能够检测在波导中传播的单个微波光子的检测器。本发明的波导降低到超导的温度。布置在波导管的中间线和接地平面之间是非常小的所需正常金属片，由此在这些材料之间形成所谓的SN触点。单独的反射测量电路耦合到普通金属片。当波导的阻抗与正常金属片的阻抗一致时，在波导中传播的光子很可能被普通金属吸收。吸收稍微升高了片的温度，这进一步改变了在反射测量电路和片之间的所谓的SIN结中观察到的阻抗。在从反射测量电路的混合器获得的出口处可以检测到改变的幅度和相位，由此可以检测单个吸收的光子。原则上，本方法和装置能够在未来的应用中实现量子计算。

3. 发明申请

US20150119252A1 SYSTEMS AND METHODS FOR FABRICATION OF SUPERCONDUCTING INTEGRATED CIRCUITS 有权
标题翻译：超导集成电路制造系统与方法
公开(公告)号：US20150119252A1
公开(公告)日：2015-04-30
申请号：US14383837
申请日：2013-03-07
申请人： D-Wave Systems Inc.
发明人： Eric Ladizinsky , Jeremy P. Hilton , Byong Hyop Oh , Paul I. Bunyk
IPC分类号： H01L39/24 , H01L39/02 , H01L39/12 , H01L39/22
CPC分类号： H01L39/2493 , B82Y10/00 , G06N99/002 , H01L27/18 , H01L39/025 , H01L39/125 , H01L39/22 , H01L39/223 , H01L39/24 , H01L39/2406
摘要： Various techniques and apparatus permit fabrication of superconductive circuits. A niobium/aluminum oxide/niobium trilayer may be formed and individual Josephson Junctions (JJs) formed. A protective cap may protect a JJ during fabrication. A hybrid dielectric may be formed. A superconductive integrated circuit may be formed using a subtractive patterning and/or additive patterning. A superconducting metal layer may be deposited by electroplating and/or polished by chemical-mechanical planarization. The thickness of an inner layer dielectric may be controlled by a deposition process. A substrate may include a base of silicon and top layer including aluminum oxide. Depositing of superconducting metal layer may be stopped or paused to allow cooling before completion. Multiple layers may be aligned by patterning an alignment marker in a superconducting metal layer.
摘要翻译：各种技术和装置允许制造超导电路。可以形成铌/氧化铝/铌三层，并形成单个的约瑟夫逊结（JJ）。保护盖可以在制造过程中保护JJ。可以形成混合电介质。可以使用减法图案化和/或添加剂图案化来形成超导集成电路。可以通过电镀和/或通过化学机械平面化抛光来沉积超导金属层。内层电介质的厚度可以通过沉积工艺来控制。衬底可以包括硅的基底和包括氧化铝的顶层。可以停止或暂停超导金属层的沉积，以在完成之前进行冷却。可以通过在超导金属层中图案化对准标记物来对准多个层。

4. 发明申请

US20140264284A1 FREQUENCY SEPARATION BETWEEN QUBIT AND CHIP MODE TO REDUCE PURCELL LOSS 有权
标题翻译： QUBIT和芯片模式之间的频率分离以减少PURCELL损失
公开(公告)号：US20140264284A1
公开(公告)日：2014-09-18
申请号：US13828263
申请日：2013-03-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： David W. Abraham , Jerry M. Chow , Antonio D. Corcoles Gonzalez , Jay M. Gambetta
IPC分类号： G06F17/50 , H01L39/22 , G06N99/00
CPC分类号： G06N99/002 , B82Y10/00 , G06F15/7807 , H01L39/22 , H01L39/24 , H01L49/006
摘要： A system, method, and chip to control Purcell loss are described. The chip includes qubits formed on a first surface of a substrate. The method includes determining frequencies of the qubits, and controlling a separation between the frequencies of the qubits and chip mode frequencies of the chip.
摘要翻译：描述了一种控制Purcell损耗的系统，方法和芯片。芯片包括形成在基板的第一表面上的量子位。该方法包括确定量子位的频率，以及控制芯片的量子位的频率和芯片模式频率之间的间隔。

5. 发明申请

US20130299783A1 Multi-Band Topological Nanowires 有权
标题翻译：多波段拓扑纳米线
公开(公告)号：US20130299783A1
公开(公告)日：2013-11-14
申请号：US13860246
申请日：2013-04-10
申请人： MICROSOFT CORPORATION
发明人： Roman M. Lutchyn , Sankar DasSarma
IPC分类号： H01L39/22
CPC分类号： H01L39/221 , H01L27/18 , H01L39/22
摘要： A topological qubit wire hosts Majorana zero-energy modes and includes a superconductor, which may be an s-wave superconductor, and a quasi-1D nanowire, which may be a semi-conductor. The Majorana zero-energy modes are localized at ends of the quasi-1D nanowire, which may be sized and shaped to provide occupancy of a few transverse modes in a first direction and occupancy of a few transverse modes in a second direction. In some instances, the occupancy in the first direction may be greater than or equal to 3, and the occupancy in the second direction may be 1.
摘要翻译：拓扑量子位线主管Majorana零能量模式，并且包括可以是s波超导体的超导体和可以是半导体的准1D纳米线。 Majorana零能量模式被定位在准1D纳米线的端部，准1D纳米线的尺寸和形状可以在第一方向上提供几个横向模式的占用并且在第二方向上占据几个横向模式。在一些情况下，第一方向上的占用可以大于或等于3，并且第二方向上的占用可以是1。

6. 发明授权

US07595500B2 High speed electron tunneling devices 有权
标题翻译：高速电子隧道装置
公开(公告)号：US07595500B2
公开(公告)日：2009-09-29
申请号：US11503585
申请日：2006-08-14
申请人： Garret Moddel , Blake J. Eliasson
发明人： Garret Moddel , Blake J. Eliasson
IPC分类号： H01L29/08
CPC分类号： H01L27/1446 , B82Y10/00 , B82Y15/00 , B82Y20/00 , H01L29/7311 , H01L29/7606 , H01L29/82 , H01L31/08 , H01L31/101 , H01L33/0004 , H01L33/0037 , H01L39/22 , H01L45/00
摘要： A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.
摘要翻译：检测器包括用于提供偏置电压的电压源和第一和第二非绝缘层，其间隔开，使得偏置电压可以在其间施加，并形成用于接收电磁辐射的天线，并将其引导到位于探测器。当在天线处接收到电磁辐射时，检测器还包括用作电子传输的装置，包括隧穿，并在第一和第二非绝缘层之间和之间。该布置包括第一绝缘层和第二层，其被配置为使得仅使用布置中的第一绝缘体将导致电子传输中的非线性的给定值，而包含第二层的非线性增加了高于给定值的非线性。入射在天线上的电磁辐射的一部分在输出端被转换成电信号。

7. 发明申请

US20030173997A1 Quantum phase-charge coupled device 有权
标题翻译：量子相电荷耦合器件
公开(公告)号：US20030173997A1
公开(公告)日：2003-09-18
申请号：US10121800
申请日：2002-04-12
发明人： Alexandre Blais , Jeremy P. Hilton
IPC分类号： H03K009/08
CPC分类号： G06N99/002 , B82Y10/00 , H01L27/18 , H01L39/22 , H01L39/225 , Y10S977/933
摘要： A superconducting structure that includes a mesoscopic phase device and a mesoscopic charge device. The superconducting structure further includes a mechanism for coupling the mesoscopic phase device and the mesoscopic charge device so that the quantum state of the mesoscopic phase device and the quantum state of the mesoscopic charge device interact. In another aspect, the superconducting structure includes a mechanism for reading out the quantum state of the mesoscopic charge device.
摘要翻译：一种超导结构，其包括介观相位装置和介观充电装置。超导结构还包括用于耦合介观相位装置和介观电荷装置的机构，使得介观相装置的量子态和介观电荷装置的量子态相互作用。另一方面，超导结构包括用于读出介观电荷装置的量子态的机构。

8. 发明授权

US06581387B1 Solid-state microrefrigerator 有权
标题翻译：固态微型制冷机
公开(公告)号：US06581387B1
公开(公告)日：2003-06-24
申请号：US10075789
申请日：2002-02-12
申请人： Joel N. Ullom
发明人： Joel N. Ullom
IPC分类号： F25B2100
CPC分类号： H01L39/22 , F25B21/00 , F25B2321/003 , F25B2400/15 , Y02B30/66
摘要： A normal-insulator-superconductor (NIS) microrefrigerator in which a superconducting single crystal is both the substrate and the superconducting electrode of the NIS junction. The refrigerator consists of a large ultra-pure superconducting single crystal and a normal metal layer on top of the superconducting crystal, separated by a thin insulating layer. The superconducting crystal can be either cut from bulk material or grown as a thick epitaxial film. The large single superconducting crystal allows quasiparticles created in the superconducting crystal to easily diffuse away from the NIS junction through the lattice structure of the crystal to normal metal traps to prevent the quasiparticles from returning across the NIS junction. In comparison to thin film NIS refrigerators, the invention provides orders of magnitude larger cooling power than thin film microrefrigerators. The superconducting crystal can serve as the superconducting electrode for multiple NIS junctions to provide an array of microrefrigerators. The normal electrode can be extended and supported by microsupports to provide support and cooling of sensors or arrays of sensors.
摘要翻译：正常绝缘体超导体（NIS）微制冷机，其中超导单晶既是衬底又是NIS结的超导电极。冰箱由超大型超纯晶体和超导晶体顶部的正常金属层组成，由绝缘层隔开。超导晶体可以从块状材料切割或者作为厚的外延膜生长。大的单超导晶体允许在超导晶体中产生的准粒子容易地从NIS结通过晶体的晶格结构扩散到正常的金属阱，以防止准粒子返回穿过NIS结。与薄膜NIS冰箱相比，本发明比薄膜微型制冷机提供了比数量级更大的冷却功率。超导晶体可以用作多个NIS结的超导电极，以提供微阵列阵列。正常电极可以由微型支架延伸和支撑，以提供传感器或传感器阵列的支撑和冷却。

9. 发明授权

US06537847B2 Superconducting dot/anti-dot flux qubit based on time-reversal symmetry breaking effects 有权
标题翻译：基于时间反转对称破坏效应的超导点/反点通量量子位
公开(公告)号：US06537847B2
公开(公告)日：2003-03-25
申请号：US10058181
申请日：2002-01-25
申请人： Alexandre M. Zagoskin , Geordie Rose , Mohammad H. S. Amin , Marcel Franz , Jeremy P. Hilton
发明人： Alexandre M. Zagoskin , Geordie Rose , Mohammad H. S. Amin , Marcel Franz , Jeremy P. Hilton
IPC分类号： H01L2100
CPC分类号： G06N99/002 , B82Y10/00 , H01L39/22 , Y10S977/933
摘要： A method is described for forming a solid state qubit. The method includes forming a dot or an anti-dot. The dot or anti-dot can be formed on a substrate and is delimited by an interface that defines a closed area. The dot or anti-dot includes a superconductive material with Cooper pairs that are in a state of non-zero orbital angular momentum on at least one side of the interface. The method includes removing superconducting material on the inner side of the interface or removing the outer side of the interface by etching. The method can further include forming a dot or an anti-dot by damaging the superconducting material such that the superconductive material becomes non-superconductive in predefined areas. The damaging of superconducting material can be performed by irradiation with particles, such as alpha particles or neutrons. The superconductive material can also be formed by doping a non-superconductive material.
摘要翻译：描述了形成固态量子位的方法。该方法包括形成点或反点。点或反点可以形成在基底上，并且由限定封闭区域的界面限定。点或反点包括具有Cooper对的超导材料，其在界面的至少一侧处于非零轨道角动量的状态。该方法包括在界面的内侧除去超导材料或通过蚀刻除去界面的外侧。该方法还可以包括通过损坏超导材料形成点或反点，使得超导材料在预定区域中变得不超导。超导材料的破坏可以通过用诸如α粒子或中子的粒子照射进行。超导材料也可以通过掺杂非超导材料来形成。

10. 发明授权

US3204116A Solid state superconductor switching device wherein extraction of normal carriers controls superconductivity of said device 失效
标题翻译：固态超导体开关器件，其中提取正常载流子控制所述器件的超导性
公开(公告)号：US3204116A
公开(公告)日：1965-08-31
申请号：US12824961
申请日：1961-07-31
申请人： RCA CORP
发明人： PARMENTER ROBERT H
IPC分类号： G11C11/44 , H01B1/00 , H01L27/00 , H01L39/00 , H01L39/22 , H03F19/00 , H03K3/38
CPC分类号： H03K3/38 , G11C11/44 , H01B1/00 , H01L27/00 , H01L39/00 , H01L39/22 , H01L39/223 , H01L39/228 , H03F19/00 , Y10S505/861

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