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1. 发明授权

US07949029B2 Wavelength tunable semiconductor laser having multiple sets of intercavity spacings 有权
标题翻译：具有多组间隙间隔的波长可调谐半导体激光器
公开(公告)号：US07949029B2
公开(公告)日：2011-05-24
申请号：US12895976
申请日：2010-10-01
申请人： Alan R. Sugg , David S. McCallum
发明人： Alan R. Sugg , David S. McCallum
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： H01S5/1021 , H01S5/0425 , H01S5/0612 , H01S5/06255 , H01S5/0654 , H01S5/1039
摘要： An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser. The device, with multiple reflectors constructed out of optical micro-cavities, is tuned either thermally or by current injection partitioned among the elements. The tunable laser exhibits a vernier tuning amongst resonances of the two or more optically-coupled micro-cavities.
摘要翻译：半导体激光器的光学耦合腔（称为微腔）的阵列由蚀刻和/或由含铝III-V半导体材料的天然氧化物定义，并且沿着纵向。蚀刻和/或自然氧化物限定纵向光学模式的折射率变化并将光场限制在微腔内，导致以光学耦合的微腔形式沿激光条周期性地分布的反射和光学反馈。激光的发射波长通过光学微腔的长度和相邻光学微腔之间的间隔的组合来控制。在延长的驱动电流范围内显示单纵模操作。在一个实施例中，两个或更多个端部耦合微腔的线性阵列布置在激光腔的纵向轴线中以获得可调激光器。具有由光学微腔构成的多个反射器的装置可以被热调节或通过在元件之间分配的电流注入来调节。可调谐激光器在两个或更多个光耦合微腔的谐振之间显示出游标调谐。

2. 发明授权

US07949028B2 Method of tuning a semiconductor laser device having coupled cavities 有权
标题翻译：调谐具有耦合腔的半导体激光器件的方法
公开(公告)号：US07949028B2
公开(公告)日：2011-05-24
申请号：US12895971
申请日：2010-10-01
申请人： Alan R. Sugg , David S. McCallum
发明人： Alan R. Sugg , David S. McCallum
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： H01S5/1021 , H01S5/0425 , H01S5/0612 , H01S5/06255 , H01S5/0654 , H01S5/1039
摘要： An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser. The device, with multiple reflectors constructed out of optical micro-cavities, is tuned either thermally or by current injection partitioned among the elements. The tunable laser exhibits a vernier tuning amongst resonances of the two or more optically-coupled micro-cavities.
摘要翻译：半导体激光器的光学耦合腔（称为微腔）的阵列由蚀刻和/或由含铝III-V半导体材料的天然氧化物定义，并且沿着纵向。蚀刻和/或自然氧化物限定纵向光学模式的折射率变化并将光场限制在微腔内，导致以光学耦合的微腔形式沿激光条周期性地分布的反射和光学反馈。激光的发射波长通过光学微腔的长度和相邻光学微腔之间的间隔的组合来控制。在延长的驱动电流范围内显示单纵模操作。在一个实施例中，两个或更多个端部耦合微腔的线性阵列布置在激光腔的纵向轴线中以获得可调激光器。具有由光学微腔构成的多个反射器的装置可以被热调节或通过在元件之间分配的电流注入来调节。可调谐激光器在两个或更多个光耦合微腔的谐振之间显示出游标调谐。

3. 发明申请

US20110019703A1 Wavelength Tunable Semiconductor Laser Having Multiple Sets of Intercavity Spacings 有权
标题翻译：波长可调谐半导体激光器具有多组间隙Spacings
公开(公告)号：US20110019703A1
公开(公告)日：2011-01-27
申请号：US12895976
申请日：2010-10-01
申请人： Alan R. Sugg , David S. McCallum
发明人： Alan R. Sugg , David S. McCallum
IPC分类号： H01S5/06 , H01S3/10
CPC分类号： H01S5/1021 , H01S5/0425 , H01S5/0612 , H01S5/06255 , H01S5/0654 , H01S5/1039
摘要： An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser. The device, with multiple reflectors constructed out of optical micro-cavities, is tuned either thermally or by current injection partitioned among the elements. The tunable laser exhibits a vernier tuning amongst resonances of the two or more optically-coupled micro-cavities.
摘要翻译：半导体激光器的光学耦合腔（称为微腔）的阵列由蚀刻和/或由含铝III-V半导体材料的天然氧化物定义，并且沿着纵向。蚀刻和/或自然氧化物限定了用于纵向光学模式的折射率变化并且将光场限制在微腔内，导致以光学耦合的微腔形式沿着激光条周期性地分布的反射和光学反馈。激光的发射波长通过光学微腔的长度和相邻光学微腔之间的间隔的组合来控制。在延长的驱动电流范围内显示单纵模操作。在一个实施例中，两个或更多个端部耦合微腔的线性阵列布置在激光腔的纵向轴线中以获得可调激光器。具有由光学微腔构成的多个反射器的装置可以被热调节或通过在元件之间分配的电流注入来调节。可调谐激光器在两个或更多个光耦合微腔的谐振之间显示出游标调谐。

4. 发明申请

US20110019702A1 METHOD OF TUNING A SEMICONDUCTOR LASER DEVICE HAVING COUPLED CAVITIES 有权
标题翻译：调谐具有耦合CAVITIES的半导体激光器件的方法
公开(公告)号：US20110019702A1
公开(公告)日：2011-01-27
申请号：US12895971
申请日：2010-10-01
申请人： Alan R. Sugg , David S. McCallum
发明人： Alan R. Sugg , David S. McCallum
IPC分类号： H01S5/06 , H01S3/10
CPC分类号： H01S5/1021 , H01S5/0425 , H01S5/0612 , H01S5/06255 , H01S5/0654 , H01S5/1039
摘要： An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser. The device, with multiple reflectors constructed out of optical micro-cavities, is tuned either thermally or by current injection partitioned among the elements. The tunable laser exhibits a vernier tuning amongst resonances of the two or more optically-coupled micro-cavities.
摘要翻译：半导体激光器的光学耦合腔（称为微腔）的阵列由蚀刻和/或由含铝III-V半导体材料的天然氧化物定义，并且沿着纵向。蚀刻和/或自然氧化物限定纵向光学模式的折射率变化并将光场限制在微腔内，导致以光学耦合的微腔形式沿激光条周期性地分布的反射和光学反馈。激光的发射波长通过光学微腔的长度和相邻光学微腔之间的间隔的组合来控制。在延长的驱动电流范围内显示单纵模操作。在一个实施例中，两个或更多个端部耦合微腔的线性阵列布置在激光腔的纵向轴线中以获得可调激光器。具有由光学微腔构成的多个反射器的装置可以被热调节或通过在元件之间分配的电流注入来调节。可调谐激光器在两个或更多个光耦合微腔的谐振之间显示出游标调谐。

5. 发明授权

US07830941B2 Wavelength selective and tunable semiconductor laser device with coupled cavities 有权
标题翻译：具有耦合腔体的波长选择性和可调谐半导体激光器件
公开(公告)号：US07830941B2
公开(公告)日：2010-11-09
申请号：US12022633
申请日：2008-01-30
申请人： Alan R. Sugg , David S. McCallum
发明人： Alan R. Sugg , David S. McCallum
IPC分类号： H01S3/10 , H01S5/00
CPC分类号： H01S5/1021 , H01S5/0425 , H01S5/0612 , H01S5/06255 , H01S5/0654 , H01S5/1039
摘要： An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser. The device, with multiple reflectors constructed out of optical micro-cavities, is tuned either thermally or by current injection partitioned among the elements. The tunable laser exhibits a vernier tuning amongst resonances of the two or more optically-coupled micro-cavities.
摘要翻译：半导体激光器的光学耦合腔（称为微腔）的阵列由蚀刻和/或由含铝III-V半导体材料的天然氧化物定义，并且沿着纵向。蚀刻和/或自然氧化物限定了用于纵向光学模式的折射率变化并且将光场限制在微腔内，导致以光学耦合的微腔形式沿着激光条周期性地分布的反射和光学反馈。激光的发射波长通过光学微腔的长度和相邻光学微腔之间的间隔的组合来控制。在延长的驱动电流范围内显示单纵模操作。在一个实施例中，两个或更多个端部耦合微腔的线性阵列布置在激光腔的纵向轴线中以获得可调激光器。具有由光学微腔构成的多个反射器的装置可以通过热或通过在元件之间分配的电流注入进行调谐。可调谐激光器在两个或更多个光耦合微腔的谐振之间显示出游标调谐。

6. 发明申请

US20080181265A1 Wavelength Selective and Tunable Semiconductor Laser Device With Coupled Cavities 有权
标题翻译：具有耦合腔的波长选择性和可调谐半导体激光器件
公开(公告)号：US20080181265A1
公开(公告)日：2008-07-31
申请号：US12022633
申请日：2008-01-30
申请人： Alan R. Sugg , David S. McCallum
发明人： Alan R. Sugg , David S. McCallum
IPC分类号： H01S3/10
CPC分类号： H01S5/1021 , H01S5/0425 , H01S5/0612 , H01S5/06255 , H01S5/0654 , H01S5/1039
摘要： An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser. The device, with multiple reflectors constructed out of optical micro-cavities, is tuned either thermally or by current injection partitioned among the elements. The tunable laser exhibits a vernier tuning amongst resonances of the two or more optically-coupled micro-cavities.
摘要翻译：半导体激光器的光学耦合腔（称为微腔）的阵列由蚀刻和/或由含铝III-V半导体材料的天然氧化物定义，并且沿着纵向。蚀刻和/或自然氧化物限定了用于纵向光学模式的折射率变化并且将光场限制在微腔内，导致以光学耦合的微腔形式沿着激光条周期性地分布的反射和光学反馈。激光的发射波长通过光学微腔的长度和相邻光学微腔之间的间隔的组合来控制。在延长的驱动电流范围内显示单纵模操作。在一个实施例中，两个或更多个端部耦合微腔的线性阵列布置在激光腔的纵向轴线中以获得可调激光器。具有由光学微腔构成的多个反射器的装置可以被热调节或通过在元件之间分配的电流注入来调节。可调谐激光器在两个或更多个光耦合微腔的谐振之间显示出游标调谐。

7. 发明授权

US09356162B2 High efficiency group III-V compound semiconductor solar cell with oxidized window layer 有权
标题翻译：具有氧化窗层的高效率III-V族化合物半导体太阳能电池
公开(公告)号：US09356162B2
公开(公告)日：2016-05-31
申请号：US12695671
申请日：2010-01-28
申请人： Noren Pan , Christopher Youtsey , David S. McCallum , Victor C. Elarde , John M. Dallesasse
发明人： Noren Pan , Christopher Youtsey , David S. McCallum , Victor C. Elarde , John M. Dallesasse
IPC分类号： H01L31/00 , H01L31/0216 , H01L31/18 , H01L31/0687 , H01L31/0735
CPC分类号： H01L31/02168 , H01L31/0687 , H01L31/0735 , H01L31/1868 , Y02E10/52 , Y02E10/544 , Y02P70/521
摘要： The present application utilizes an oxidation process to fabricating a Group III-V compound semiconductor solar cell device. By the oxidation process, a window layer disposed on a cell unit is oxidized to enhance the efficiency of the solar cell device. The oxidized window has an increased band gap to minimize the surface recombination of electrons and holes. The oxidized window also improves transparency at the wavelengths that were absorbed in the conventional window layer.
摘要翻译：本申请利用氧化工艺制造III-V族化合物半导体太阳能电池器件。通过氧化处理，设置在电池单元上的窗口层被氧化以提高太阳能电池装置的效率。氧化的窗口具有增加的带隙以最小化电子和空穴的表面复合。氧化的窗口还提高了在常规窗口层中吸收的波长的透明度。

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